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1. 发明申请

US20120135609A1 Apparatus and Process for Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积的装置和工艺
公开(公告)号：US20120135609A1
公开(公告)日：2012-05-31
申请号：US12956650
申请日：2010-11-30
申请人： Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
发明人： Joseph Yudovsky , Tatsuya Sato , Kenric Choi , Anh N. Nguyen , Faruk Gungor
IPC分类号： H01L21/30 , B67D7/06
CPC分类号： C23C16/45565 , C23C16/45548 , C23C16/45574
摘要： Provided are gas distribution plates (showerheads) for use in an apparatus configured to form a film during, for example, an atomic layer deposition (ALD) process. The gas distribution plate comprises a body defining a thickness and a peripheral edge and has a front surface for facing the substrate. The front surface has a central region with a plurality of openings configured to distribute process gases over the substrate and a focus ring with a sloped region. The focus ring is concentric to the central region such that the thickness at the focus ring is greater than the thickness at the central region.
摘要翻译：提供了用于在例如原子层沉积（ALD）工艺期间形成膜的装置中使用的气体分配板（喷头）。气体分配板包括限定厚度和外围边缘的主体，并且具有面向基板的前表面。前表面具有中心区域，其具有多个开口，其被配置成在衬底上分配工艺气体和具有倾斜区域的聚焦环。聚焦环与中心区域同心，使得聚焦环处的厚度大于中心区域处的厚度。

2. 发明授权

US08309874B2 Gas heater 有权
标题翻译：燃气加热器
公开(公告)号：US08309874B2
公开(公告)日：2012-11-13
申请号：US12122616
申请日：2008-05-16
申请人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
发明人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
IPC分类号： H05B1/00
CPC分类号： F28F7/02
摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.
摘要翻译：一种用于加热或冷却流体的方法和装置。连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。在薄间隙附近的热插入物通过出口管道流出或流出流体。

3. 发明申请

US20090283252A1 GAS HEATER 有权
标题翻译：气体加热器
公开(公告)号：US20090283252A1
公开(公告)日：2009-11-19
申请号：US12122616
申请日：2008-05-16
申请人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
发明人： Tao Hou , Son T. Nguyen , Kenric Choi , Anh N. Nguyen
IPC分类号： G05D23/00 , F28F1/10 , H05B1/00 , H05B1/02
CPC分类号： F28F7/02
摘要： A method and apparatus for heating or cooling a fluid. An inlet conduit coupled to a plurality of distribution nozzles in fluid communication with a channel at the periphery of the apparatus. An insert and a sleeve cooperatively define a thin gap, in fluid communication with the channel, through which the fluid flows. Thermal inserts near the thin gap generate heat flux into or out of the fluid, which exits through an outlet conduit.
摘要翻译：一种用于加热或冷却流体的方法和装置。连接到多个分配喷嘴的入口导管，与设备外围的通道流体连通。插入件和套筒协同地限定与流体流体连通的薄间隙，流体流过该间隙。在薄间隙附近的热插入物通过出口管道流出或流出流体。

4. 发明申请

US20110223334A1 ATOMIC LAYER DEPOSITION CHAMBER WITH MULTI INJECT 有权
标题翻译：原子层沉积室多重注入
公开(公告)号：US20110223334A1
公开(公告)日：2011-09-15
申请号：US13043189
申请日：2011-03-08
申请人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
发明人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
IPC分类号： C23C16/455 , C23C16/458
CPC分类号： C23C16/45574 , C23C16/4408 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01J37/32449 , H01L21/0228 , H01L21/28194 , H01L21/3141
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，室盖组件包括具有上部和下部的通道，其中通道沿着中心轴线延伸，壳体具有内部区域并且至少部分地限定两个或更多个环形通道，插入件设置在所述内部区域并且限定所述上部，所述上部与所述两个或多个环形通道流体联接，以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

5. 发明授权

US07222636B2 Electronically actuated valve 有权
标题翻译：电动阀
公开(公告)号：US07222636B2
公开(公告)日：2007-05-29
申请号：US10644598
申请日：2003-08-20
申请人： Anh N. Nguyen , Joseph Yudovsky , Mark A. Alexander , Hungsuk A. Yoon , Chiliang L. Chen
发明人： Anh N. Nguyen , Joseph Yudovsky , Mark A. Alexander , Hungsuk A. Yoon , Chiliang L. Chen
IPC分类号： F16K31/06
CPC分类号： F16K31/0655 , F16K31/0675 , Y10T137/0419 , Y10T137/4259
摘要： The present invention relates to a method and apparatus for delivery of reactants to a substrate processing chamber. An electronically controlled valve assembly is provided for rapid delivery of pulses of reactants to the chamber. The valve assembly comprises a valve body having a valve seat, and at least one gas inlet and one gas outlet below the seat. The piston is selectively movable within the valve body to open and close the valve. In order to actuate the valve assembly, current is sent to a solenoid coil within the valve body. The solenoid coil generates a magnetic field that acts on an adjacent magnetic member. The solenoid coil, magnetic member and piston are arranged such that relative movement of the coil and magnetic member cause the piston to be moved relative to the valve seat.
摘要翻译：本发明涉及一种将反应物递送到基板处理室的方法和装置。提供电子控制阀组件，用于将反应物的脉冲快速输送到室。阀组件包括具有阀座的阀体，以及座下方的至少一个气体入口和一个气体出口。活塞可选择性地在阀体内移动以打开和关闭阀。为了致动阀组件，电流被送到阀体内的螺线管线圈。螺线管线圈产生作用在相邻磁性部件上的磁场。电磁线圈，磁性构件和活塞被布置成使得线圈和磁性构件的相对运动导致活塞相对于阀座移动。

6. 发明授权

US09175394B2 Atomic layer deposition chamber with multi inject 有权
标题翻译：具有多次注入的原子层沉积室
公开(公告)号：US09175394B2
公开(公告)日：2015-11-03
申请号：US13043189
申请日：2011-03-08
申请人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
发明人： Joseph Yudovsky , Anh N. Nguyen , Tai T. Ngo
IPC分类号： C23C16/44 , C23C16/455 , H01J37/32 , H01L21/28 , H01L21/31 , H01L21/02 , H01L21/314
CPC分类号： C23C16/45574 , C23C16/4408 , C23C16/45504 , C23C16/45525 , C23C16/45544 , C23C16/45561 , C23C16/45591 , H01J37/32449 , H01L21/0228 , H01L21/28194 , H01L21/3141
摘要： Embodiments of the invention relate to apparatus and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber lid assembly comprises a channel having an upper portion and a lower portion, wherein the channel extends along a central axis, a housing having an inner region and at least partially defining two or more annular channels, an insert disposed in the inner region and defining the upper portion, the upper portion fluidly coupled with the two or more annular channels, and a tapered bottom surface extending from the bottom portion of the channel to a peripheral portion of the chamber lid assembly.
摘要翻译：本发明的实施例涉及在原子层沉积工艺期间在衬底上沉积材料的装置和方法。在一个实施例中，室盖组件包括具有上部和下部的通道，其中通道沿着中心轴线延伸，壳体具有内部区域并且至少部分地限定两个或更多个环形通道，插入件设置在所述内部区域并且限定所述上部，所述上部与所述两个或多个环形通道流体联接，以及从所述通道的底部部分延伸到所述腔室盖组件的周边部分的锥形底面。

7. 发明申请

US20120225192A1 Apparatus And Process For Atomic Layer Deposition 审中-公开
标题翻译：用于原子层沉积的装置和工艺
公开(公告)号：US20120225192A1
公开(公告)日：2012-09-06
申请号：US13189692
申请日：2011-07-25
申请人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
发明人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
IPC分类号： C23C16/458 , B05D5/12
CPC分类号： C23C16/45551 , C23C16/45527
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.
摘要翻译：提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

8. 发明申请

US20120225191A1 Apparatus and Process for Atomic Layer Deposition 审中-公开
标题翻译：原子层沉积的装置和工艺
公开(公告)号：US20120225191A1
公开(公告)日：2012-09-06
申请号：US13037992
申请日：2011-03-01
申请人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
发明人： Joseph Yudovsky , Garry K. Kwong , Mei Chang , Anh N. Nguyen , David Thompson
IPC分类号： C23C16/455 , B05D5/12
CPC分类号： C23C16/45551 , C23C16/45527
摘要： Provided are atomic layer deposition apparatus and methods including a gas distribution plate comprising at least one gas injector unit. Each gas injector unit comprises a plurality of elongate gas injectors including at least two first reactive gas injectors and at least one second reactive gas injector, the at least two first reactive gas injectors surrounding the at least one second reactive gas injector. Also provided are atomic layer deposition apparatuses and methods including a gas distribution plate with a plurality of gas injector units.
摘要翻译：提供的原子层沉积装置和方法包括包括至少一个气体注入单元的气体分配板。每个气体喷射器单元包括多个细长的气体喷射器，其包括至少两个第一反应气体喷射器和至少一个第二反应气体喷射器，所述至少两个第一反应气体喷射器围绕至少一个第二反应气体喷射器。还提供了包括具有多个气体喷射器单元的气体分配板的原子层沉积设备和方法。

9. 发明授权

US08382897B2 Process gas delivery for semiconductor process chambers 有权
标题翻译：半导体处理室的工艺气体输送
公开(公告)号：US08382897B2
公开(公告)日：2013-02-26
申请号：US13456189
申请日：2012-04-25
申请人： Kedarnath Sangam , Anh N. Nguyen
发明人： Kedarnath Sangam , Anh N. Nguyen
IPC分类号： C30B25/14
CPC分类号： H01L21/3141 , C23C16/405 , C23C16/45544 , C23C16/45582 , H01L21/31645 , Y10T117/10 , Y10T137/87249
摘要： Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.
摘要翻译：本文提供了将气体输送到处理室的方法。在一些实施例中，方法可以包括使工艺气体流过一个或多个气体导管，每个气体管道具有入口和出口，用于促进气体流过气体导管并进入具有第二体积的气体入口漏斗，其中每个气体管道具有小于第二容积的第一容积，并且其中每个气体导管具有从靠近入口的第一横截面增加到靠近出口的第二横截面的横截面，但不包括气体入口漏斗和气体导管，并且其中第二横截面是非圆形的; 以及经由进气漏斗将工艺气体输送到衬底。

10. 发明授权

US06660126B2 Lid assembly for a processing system to facilitate sequential deposition techniques 失效
公开(公告)号：US06660126B2
公开(公告)日：2003-12-09
申请号：US09798251
申请日：2001-03-02
申请人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
发明人： Anh N. Nguyen , Michael X. Yang , Ming Xi , Hua Chung , Anzhong Chang , Xiaoxiong Yuan , Siqing Lu
IPC分类号： H05H100
CPC分类号： C23C16/45544 , C23C16/4401 , C23C16/4411 , C23C16/452 , H01L21/67017
摘要： A lid for a semiconductor system, an exemplary embodiment of which includes a support having opposed first and second opposed surfaces. A valve is coupled to the first surface. A baffle plate is mounted to the second surface. The valve is coupled to the support to direct a flow of fluid along a path in original direction and at an injection velocity. The baffle plate is disposed in the path to disperse the flow of fluid in a plane extending transversely to the original direction. In one embodiment the valve is mounted to a W-seal that is in turn mounted to the first surface of the support.

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