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    • 4. 发明授权
    • Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
    • 使用含卤素等离子体对氟化钙材料进行脱羟基化和纯化
    • US06982001B2
    • 2006-01-03
    • US10856633
    • 2004-05-28
    • Robert A. BellmanDana C. BookbinderKishor P. GadkareeCynthia B. Giroux
    • Robert A. BellmanDana C. BookbinderKishor P. GadkareeCynthia B. Giroux
    • C30B11/00C30B11/12
    • C01B9/08C01F11/22C30B11/00C30B29/12
    • The invention is directed to a process of purifying metal fluoride materials used to make metal fluoride single crystals suitable for making optical elements used in the transmission of wavelengths below 200 nm, and in particular to a process of purifying such materials by the use of a halogen containing plasma to convert metal oxygenates contaminating the feedstocks used in the preparation of the crystals to metal fluorides. The invention also is directed to a process of growing a metal fluoride single crystal using a crystal growth furnace to carry out the foregoing purification procedure followed by the steps of melting the purified material and cooling it using s selected time and temperature cycle to from a metal fluoride single crystal. The plasmas used in practicing the invention can be derived from a variety of halogenated materials including, for example, fluorocarbons, chlorocarbons, boron trihalides, chlorine, fluorine, xenon difluoride and other gaseous or easily volatilized halogenated substances known in the art.
    • 本发明涉及一种净化金属氟化物材料的方法,所述金属氟化物材料用于制备适于制造用于波长低于200nm的透射体的光学元件的金属氟化物单晶,并且特别涉及一种通过使用卤素 将等离子体转化成金属氧化物,将用于制备晶体的原料污染成金属氟化物。 本发明还涉及使用晶体生长炉生长金属氟化物单晶的方法,以执行上述纯化程序,然后是将精制材料熔化并使用选定的时间和温度循环冷却至金属 氟化物单晶。 用于实施本发明的等离子体可以衍生自各种卤化物质,包括例如碳氟化合物,氯代烃,三卤化硼,氯,氟,氙二氟化物以及本领域已知的其它气态或易挥发的卤化物质。