专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100275176A1 Method for Time-Evolving Rectilinear Contours Representing Photo Masks 有权
公开(公告)号：US20100275176A1
公开(公告)日：2010-10-28
申请号：US12794614
申请日：2010-06-04
申请人： Daniel Abrams , Danping Peng , Stanley Osher
发明人： Daniel Abrams , Danping Peng , Stanley Osher
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.

2. 发明申请

US20070184357A1 Systems, Masks, and Methods for Photolithography 有权
标题翻译：用于光刻的系统，掩模和方法
公开(公告)号：US20070184357A1
公开(公告)日：2007-08-09
申请号：US11531673
申请日：2006-09-13
申请人： Daniel Abrams , Stanley Osher , Danping Peng
发明人： Daniel Abrams , Stanley Osher , Danping Peng
IPC分类号： G06F17/50 , G03F1/00
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by mask functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要翻译：光掩模图案使用由掩模功能定义的轮廓来表示。给定目标图案，轮廓被优化，使得定义的光掩模在光刻工艺中使用时，将晶片图案忠实地印刷到目标图案上。优化利用“优点功能”来编码光刻工艺的方面，与所产生的图案有关的偏好（例如对直线图案的限制），对工艺变化的鲁棒性以及与光掩模的实际和经济可制造性有关的限制。

3. 发明申请

US20070011645A1 METHOD FOR TIME-EVOLVING RECTILINEAR CONTOURS REPRESENTING PHOTO MASKS 有权
标题翻译：用于时间演化表示轮廓的方法
公开(公告)号：US20070011645A1
公开(公告)日：2007-01-11
申请号：US11209268
申请日：2005-08-22
申请人： Daniel Abrams , Danping Peng , Stanley Osher
发明人： Daniel Abrams , Danping Peng , Stanley Osher
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要翻译：光掩模图案使用由级别集函数定义的轮廓来表示。给定目标图案，轮廓被优化，使得定义的光掩模在光刻工艺中使用时，将晶片图案忠实地印刷到目标图案上。优化利用“优点功能”来编码光刻工艺的方面，与所产生的图案有关的偏好（例如对直线图案的限制），对工艺变化的鲁棒性以及与光掩模的实际和经济可制造性有关的限制。

4. 发明申请

US20070011644A1 Optimized photomasks for photolithography 有权
标题翻译：优化的光掩模用于光刻
公开(公告)号：US20070011644A1
公开(公告)日：2007-01-11
申请号：US10408924
申请日：2003-04-06
申请人： Daniel Abrams , Danping Peng
发明人： Daniel Abrams , Danping Peng
IPC分类号： G06F17/50
CPC分类号： G06F17/5068 , G03F1/36 , G06F2217/12 , Y02P90/265
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要翻译：光掩模图案使用由级别集函数定义的轮廓来表示。给定目标图案，轮廓被优化，使得定义的光掩模在光刻工艺中使用时，将晶片图案忠实地印刷到目标图案上。优化利用“优点功能”来编码光刻工艺的方面，与所产生的图案有关的偏好（例如对直线图案的限制），对工艺变化的鲁棒性以及与光掩模的实际和经济可制造性有关的限制。

5. 发明申请

US20060172204A1 Systems, masks and methods for printing contact holes and other patterns 审中-公开
标题翻译：打印接触孔和其他图案的系统，掩模和方法
公开(公告)号：US20060172204A1
公开(公告)日：2006-08-03
申请号：US11335018
申请日：2006-01-18
申请人： Danping Peng , Yong Liu , Daniel Abrams
发明人： Danping Peng , Yong Liu , Daniel Abrams
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/36
摘要： Contact hole patterns are disclosed having a plurality of peripheral regions formed around a target area in which a contact hole is to be formed. The peripheral regions visually resemble “lobes” or “leaves” extending outwards towards the periphery of the target area. The lobes may be disjoint or connected to each other. Present methods can be used to prepare masks for printing contact holes on wafers, as well as to prepare design patterns for laser-writers or direct-write lithography in order to print contact holes on masks or directly on wafers. The methods apply to both binary and phase-shift mask designs with varying illuminations.
摘要翻译：公开了具有形成在要形成接触孔的目标区域周围的多个周边区域的接触孔图案。外围区域视觉上类似于向外朝向目标区域的周边延伸的“叶”或“叶”。裂片可能不相交或相互连接。现有方法可用于制备用于在晶片上印刷接触孔的掩模，以及准备用于激光写入器或直写光刻的设计图案，以便在掩模上或直接在晶片上印刷接触孔。该方法适用于具有不同照明度的二进制和相移掩模设计。

6. 发明申请

US20090013304A1 Physical-Resist Model Using Fast Sweeping 有权
标题翻译：使用快速扫描的物理抵抗模型
公开(公告)号：US20090013304A1
公开(公告)日：2009-01-08
申请号：US11773923
申请日：2007-07-05
申请人： Danping Peng
发明人： Danping Peng
IPC分类号： G06F17/50
CPC分类号： G03F7/705 , G03F1/36
摘要： A method for determining a surface in a material is described. During this method, arrival times of a wavefront at a first depth in the material are calculated using an Eikonal equation. Note that the first depth is proximate to an outer surface of the material. Next, arrival times of the wavefront at a second depth in the material are calculated using the Eikonal equation and the calculated arrival times at the first depth. Then, the surface in the material is determined based on the calculated arrival times at the first depth, the calculated arrival times at the second depth, and a given time interval. Note that arrival times at a given depth in the material, which includes the first depth or the second depth, are calculated by directly determining a steady-state solution of the Eikonal equation.
摘要翻译：描述了用于确定材料中的表面的方法。在该方法中，使用Eikonal方程计算材料中第一深度处的波前的到达时间。注意，第一深度接近材料的外表面。接下来，使用Eikonal方程和第一深度处的计算的到达时间来计算材料中第二深度处的波前的到达时间。然后，基于在第一深度处的计算出的到达时间，在第二深度处的计算的到达时间和给定的时间间隔来确定材料中的表面。注意，通过直接确定Eikonal方程的稳态解来计算材料中包含第一深度或第二深度的给定深度处的到达时间。

7. 发明授权

US07441227B2 Method for time-evolving rectilinear contours representing photo masks 有权
标题翻译：用于时间演化表示光掩模的直线轮廓的方法
公开(公告)号：US07441227B2
公开(公告)日：2008-10-21
申请号：US11549846
申请日：2006-10-16
申请人： Daniel Abrams , Danping Peng , Stanley Osher
发明人： Daniel Abrams , Danping Peng , Stanley Osher
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要翻译：光掩模图案使用由级别集函数定义的轮廓来表示。给定目标图案，轮廓被优化，使得定义的光掩模在光刻工艺中使用时，将晶片图案忠实地印刷到目标图案上。优化利用“优点功能”来编码光刻工艺的方面，与所产生的图案有关的偏好（例如对直线图案的限制），对工艺变化的鲁棒性以及与光掩模的实际和经济可制造性有关的限制。

8. 发明申请

US20070198966A1 Method for Time-Evolving Rectilinear Contours Representing Photo Masks 有权
公开(公告)号：US20070198966A1
公开(公告)日：2007-08-23
申请号：US11549846
申请日：2006-10-16
申请人： Daniel Abrams , Danping Peng , Stanley Osher
发明人： Daniel Abrams , Danping Peng , Stanley Osher
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.

9. 发明申请

US20070196742A1 Mask-Patterns Including Intentional Breaks 有权
标题翻译：面具模式包括故意破坏
公开(公告)号：US20070196742A1
公开(公告)日：2007-08-23
申请号：US11538782
申请日：2006-10-04
申请人： Daniel Abrams , Danping Peng , Yong Liu , Paul Rissman
发明人： Daniel Abrams , Danping Peng , Yong Liu , Paul Rissman
IPC分类号： G03F1/00 , G03C5/00 , G06F17/50 , G03C1/00
CPC分类号： G03F1/36
摘要： A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.
摘要翻译：描述了在光刻工艺中用于确定在光掩模上使用的掩模图案的方法。在该方法期间，提供了包括至少一个连续特征的目标图案。然后确定包括对应于光掩模的不同类型的区域的多个不同类型的区域的掩模图案。注意，掩模图案包括至少两个对应于至少一个连续特征的独立特征。此外，至少两个分离的特征被具有长度的间隔分开，并且该间隔至少与一个连续特征的至少一部分重叠。

10. 发明申请

US20070136716A1 Method for Time-Evolving Rectilinear Contours Representing Photo Masks 有权
标题翻译：表示照片面具的时间演化直线轮廓的方法
公开(公告)号：US20070136716A1
公开(公告)日：2007-06-14
申请号：US11674130
申请日：2007-02-12
申请人： Daniel Abrams , Danping Peng , Stanley Osher
发明人： Daniel Abrams , Danping Peng , Stanley Osher
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： Photomask patterns are represented using contours defined by level-set functions. Given target pattern, contours are optimized such that defined photomask, when used in photolithographic process, prints wafer pattern faithful to target pattern. Optimization utilizes “merit function” for encoding aspects of photolithographic process, preferences relating to resulting pattern (e.g. restriction to rectilinear patterns), robustness against process variations, as well as restrictions imposed relating to practical and economic manufacturability of photomasks.
摘要翻译：光掩模图案使用由级别集函数定义的轮廓来表示。给定目标图案，轮廓被优化，使得定义的光掩模在光刻工艺中使用时，将晶片图案忠实地印刷到目标图案上。优化利用“优点功能”来编码光刻工艺的方面，与所产生的图案有关的偏好（例如对直线图案的限制），对工艺变化的鲁棒性以及与光掩模的实际和经济可制造性有关的限制。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式