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1. 发明申请

US20070196742A1 Mask-Patterns Including Intentional Breaks 有权
标题翻译：面具模式包括故意破坏
公开(公告)号：US20070196742A1
公开(公告)日：2007-08-23
申请号：US11538782
申请日：2006-10-04
申请人： Daniel Abrams , Danping Peng , Yong Liu , Paul Rissman
发明人： Daniel Abrams , Danping Peng , Yong Liu , Paul Rissman
IPC分类号： G03F1/00 , G03C5/00 , G06F17/50 , G03C1/00
CPC分类号： G03F1/36
摘要： A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.
摘要翻译：描述了在光刻工艺中用于确定在光掩模上使用的掩模图案的方法。在该方法期间，提供了包括至少一个连续特征的目标图案。然后确定包括对应于光掩模的不同类型的区域的多个不同类型的区域的掩模图案。注意，掩模图案包括至少两个对应于至少一个连续特征的独立特征。此外，至少两个分离的特征被具有长度的间隔分开，并且该间隔至少与一个连续特征的至少一部分重叠。

2. 发明授权

US07793253B2 Mask-patterns including intentional breaks 有权
标题翻译：面具图案包括故意休息
公开(公告)号：US07793253B2
公开(公告)日：2010-09-07
申请号：US11538782
申请日：2006-10-04
申请人： Daniel S. Abrams , Danping Peng , Yong Liu , Paul Rissman
发明人： Daniel S. Abrams , Danping Peng , Yong Liu , Paul Rissman
IPC分类号： G06F17/50
CPC分类号： G03F1/36
摘要： A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.
摘要翻译：描述了在光刻工艺中用于确定在光掩模上使用的掩模图案的方法。在该方法期间，提供了包括至少一个连续特征的目标图案。然后确定包括对应于光掩模的不同类型的区域的多个不同类型的区域的掩模图案。注意，掩模图案包括至少两个对应于至少一个连续特征的独立特征。此外，至少两个分离的特征被具有长度的间隔分开，并且该间隔至少与一个连续特征的至少一部分重叠。

3. 发明授权

US06747358B1 Self-aligned alloy capping layers for copper interconnect structures 有权
标题翻译：用于铜互连结构的自对准合金覆盖层
公开(公告)号：US06747358B1
公开(公告)日：2004-06-08
申请号：US10368760
申请日：2003-02-18
申请人： Paul Rissman , Richard Schinella , Sheldon Aronowitz , Vladimir Zubkov
发明人： Paul Rissman , Richard Schinella , Sheldon Aronowitz , Vladimir Zubkov
IPC分类号： H01L2131
CPC分类号： H01L23/53238 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer. In another method embodiment for forming a capping layer on a copper-containing conducting structure, a substrate having formed thereon electrically conducting layer comprised of a copper-containing material is provided. A layer of reactive material is then formed on the surface of the substrate. This is followed by reacting a portion of the layer of reactive material with the copper-containing material of the conducting layer to form an alloy material on the conducting layer. Unalloyed reactive material is removed from the substrate by heating the substrate to a temperature where the unalloyed reactive material desorbs from the surface of the substrate but where the alloy material remains in place on the substrate surface thereby forming a self-aligned capping layer. In another embodiment, the process is repeated iteratively until a capping layer having the desired thickness is formed.
摘要翻译：本发明的实施方案包括在含铜层上形成的合金材料的覆盖层，该合金构造成防止铜通过覆盖层的扩散。在另一个实施例中，合金覆盖层与下面的导电层自对准。具体实施方案包括由铜的合金与包括但不限于钙，锶，钡和其它碱土金属的材料形成的封盖层，以及来自其它基团的材料，例如镉或硒。本发明还包括在含铜导电结构上形成合金覆盖层的方法。一种这样的方法包括提供其上形成有由含铜材料构成的导电层并在导电层上形成合金覆盖层的衬底。在另一方法实施例中，形成合金覆盖层包括在导电层上形成自对准覆盖层。在用于在含铜导电结构上形成覆盖层的另一方法实施例中，其上形成有导电层的基板包括提供含铜材料。然后在衬底的表面上形成一层反应性材料。然后使反应性材料层的一部分与导电层的含铜材料反应，以在导电层上形成合金材料。通过将衬底加热到非合金反应物质从衬底表面脱附的温度，但是合金材料保留在衬底表面上的适当位置，从而形成非对准的覆盖层，从衬底去除非合金反应性材料。在另一个实施方案中，迭代地重复该过程，直到形成具有所需厚度的覆盖层。

4. 发明授权

US06986972B1 Alternating aperture phase-shift mask fabrication method 失效
标题翻译：交替孔径相移掩模制造方法
公开(公告)号：US06986972B1
公开(公告)日：2006-01-17
申请号：US10358968
申请日：2003-02-04
申请人： Paul Rissman
发明人： Paul Rissman
IPC分类号： G01F9/00
CPC分类号： H01L21/26586 , G03F1/30 , G03F1/80 , H01L21/26513
摘要： Embodiments of the invention include a method for forming alternating aperture phase-shift masks. An optically transparent substrate suitable for having a pattern of phase-shift regions formed thereon is provided. Alternatively, an opaque pattern is formed on the optically transparent substrate, the opaque pattern defining a pattern of phase-shift regions on the substrate. The phase shift regions are then ion implanted to damage the phase-shift regions. The damage penetrates to a predetermined depth and forms damaged regions that can be more easily etched than the adjacent undamaged portions of the substrate. The damaged portions define a final profile for phase shift recesses to be formed in the substrate. After implantation, substrate material is removed from the damaged phase-shift regions so that recesses are formed therein. The recesses are formed having a depth that corresponds to the depth of the damage caused in the phase-shift regions by the ion implantation.
摘要翻译：本发明的实施例包括形成交替孔径相移掩模的方法。提供了适于具有形成在其上的相移区域的图案的光学透明基板。或者，在光学透明基板上形成不透明图案，不透明图案限定了基板上的相移区域的图案。然后将相移区域离子注入以损坏相移区域。损伤穿透到预定的深度并且形成可以比基板的相邻未损坏部分更容易蚀刻的损坏区域。受损部分限定了在衬底中形成的相移凹槽的最终轮廓。在植入之后，从损坏的相移区域去除衬底材料，从而在其中形成凹陷。这些凹部形成为具有对应于通过离子注入在相移区域中引起的损伤的深度的深度。

5. 发明授权

US08082524B2 Mask patterns for use in multiple-exposure lithography 有权
标题翻译：用于多曝光光刻的掩模图案
公开(公告)号：US08082524B2
公开(公告)日：2011-12-20
申请号：US12423686
申请日：2009-04-14
申请人： Robert P. Gleason , Timothy Lin , Andrew J. Moore , Bennett W. Olson , Paul Rissman
发明人： Robert P. Gleason , Timothy Lin , Andrew J. Moore , Bennett W. Olson , Paul Rissman
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.
摘要翻译：描述了一种用于确定在多曝光光刻工艺中用于光掩模的掩模图案的方法。在该方法期间，用于单曝光光刻工艺中使用的初始掩模图案和待印刷的目标图案用于确定预期使用的第一掩模图案和第二掩模图案在多曝光光刻工艺中。特别地，第一掩模图案包括第一特征，第二掩模图案包括第二特征，并且第一特征和第二特征与初始掩模图案中的特征之间的交点重叠。此外，第一掩模图案和第二掩模图案在初始掩模图案中沿着至少一个方向具有相对于初始掩模图案的至少一个减小的空间频率。

6. 发明授权

US5661043A Forming a buried insulator layer using plasma source ion implantation 失效
标题翻译：使用等离子体源离子注入形成掩埋绝缘体层
公开(公告)号：US5661043A
公开(公告)日：1997-08-26
申请号：US280103
申请日：1994-07-25
申请人： Paul Rissman , James B. Kruger , J. Leon Shohet
发明人： Paul Rissman , James B. Kruger , J. Leon Shohet
IPC分类号： H01L21/31 , H01L21/02 , H01L21/265 , H01L21/76 , H01L21/84 , H01L27/12
CPC分类号： H01L21/84 , H01J37/32412 , H01L21/26533
摘要： A method and apparatus for forming a buried insulator layer, typically a silicon dioxide layer, includes using plasma source ion implantation to uniformly implant ions into exposed regions of a semiconductor wafer. A silicon-on-insulator (SOI) structure is formed by an anneal step before fabricating an integrated circuit into the thin semiconductor layer above the buried insulator layer.
摘要翻译：用于形成掩埋绝缘体层（通常为二氧化硅层）的方法和装置包括使用等离子体源离子注入将离子均匀地注入到半导体晶片的暴露区域中。在将集成电路制造到掩埋绝缘体层上方的薄半导体层之后，通过退火步骤形成绝缘体上硅（SOI）结构。

7. 发明授权

US4463265A Electron beam proximity effect correction by reverse field pattern exposure 失效
标题翻译：通过反向场图案曝光的电子束接近效应校正
公开(公告)号：US4463265A
公开(公告)日：1984-07-31
申请号：US389306
申请日：1982-06-17
申请人： Geraint Owen , Paul Rissman
发明人： Geraint Owen , Paul Rissman
IPC分类号： H01L21/027 , G03F7/20 , H01J37/317 , H01L21/30 , H01J3/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2061 , H01J37/3174 , H01L21/30 , H01J2237/31769 , H01J2237/31771
摘要： In electron beam lithography, a beam of incident electrons exposes a preselected circuit pattern in a thin resist layer deposited on top of a substrate to be etched. Some of the electrons scatter from the substrate back into the resist layer producing an undesired exposure which produces variable resolution of features. In accordance with the disclosed technique, the region of the resist which is complementary to the desired circuit pattern is also exposed by an electron beam which has been adjusted to produce an exposure approximating that due to backscattering. This additional exposure removes the spatial variability in resolution attainable by the electron beam lithography.
摘要翻译：在电子束光刻中，入射电子束在沉积在要蚀刻的衬底顶部的薄抗蚀剂层中暴露预选电路图案。一些电子从衬底返回到抗蚀剂层中，产生不期望的暴露，产生可变分辨率的特征。根据所公开的技术，与期望的电路图案互补的抗蚀剂的区域也被电子束曝光，电子束已被调整以产生接近于由于后向散射引起的曝光。这种额外的曝光消除了通过电子束光刻获得的分辨率的空间变异性。

8. 发明申请

US20090319978A1 Mask Patterns for Use in Multiple-Exposure Lithography 有权
标题翻译：在多曝光光刻中使用的面膜图案
公开(公告)号：US20090319978A1
公开(公告)日：2009-12-24
申请号：US12423686
申请日：2009-04-14
申请人： Robert P. Gleason , Timothy Lin , Andrew J. Moore , Bennett W. Olson , Paul Rissman
发明人： Robert P. Gleason , Timothy Lin , Andrew J. Moore , Bennett W. Olson , Paul Rissman
IPC分类号： G06F17/50
CPC分类号： G03F7/70466 , G03F1/70
摘要： A method for determining mask patterns to be used on photo-masks in a multiple-exposure photolithographic process is described. During the method, an initial mask pattern, which is intended for use in a single-exposure photolithographic process, and a target pattern that is to be printed are used to determine a first mask pattern and a second mask pattern, which are intended for use in the multiple-exposure photolithographic process. In particular, the first mask pattern includes a first feature and the second mask pattern includes a second feature, and the first feature and the second feature overlap an intersection between features in the initial mask pattern. Moreover, the first mask pattern and the second mask pattern have at least one decreased spatial frequency relative to the initial mask pattern along at least one direction in the initial mask pattern.
摘要翻译：描述了一种用于确定在多曝光光刻工艺中用于光掩模的掩模图案的方法。在该方法期间，用于单曝光光刻工艺中使用的初始掩模图案和待印刷的目标图案用于确定预期使用的第一掩模图案和第二掩模图案在多曝光光刻工艺中。特别地，第一掩模图案包括第一特征，第二掩模图案包括第二特征，并且第一特征和第二特征与初始掩模图案中的特征之间的交点重叠。此外，第一掩模图案和第二掩模图案在初始掩模图案中沿着至少一个方向具有相对于初始掩模图案的至少一个减小的空间频率。

9. 发明授权

US06566262B1 Method for creating self-aligned alloy capping layers for copper interconnect structures 有权
标题翻译：用于制造用于铜互连结构的自对准合金覆盖层的方法
公开(公告)号：US06566262B1
公开(公告)日：2003-05-20
申请号：US10004461
申请日：2001-11-01
申请人： Paul Rissman , Richard Schinella , Sheldon Aronowitz , Vladimir Zubkov
发明人： Paul Rissman , Richard Schinella , Sheldon Aronowitz , Vladimir Zubkov
IPC分类号： H01L2144
CPC分类号： H01L23/53238 , H01L21/76849 , H01L21/76858 , H01L21/76886 , H01L2924/0002 , H01L2924/00
摘要： Embodiments of the invention include a capping layer of alloy material formed over a copper-containing layer, the alloy configured to prevent diffusion of copper through the capping layer. In another embodiment the alloy capping layer is self-aligned to the underlying conducting layer. Specific embodiments include capping layers formed of alloys of copper with materials including but not limited to calcium, strontium, barium, and other alkaline earth metals, as well as materials from other groups, for example, cadmium or selenium. The invention also includes methods for forming an alloy capping layer on a copper-containing conducting structure. One such method includes providing a substrate having formed thereon electrically conducting layer comprised of a copper-containing material and forming an alloy capping layer on the electrically conducting layer. In another method embodiment, forming the alloy capping layer includes forming a self-aligned capping layer over the conducting layer. In another method embodiment for forming a capping layer on a copper-containing conducting structure, a substrate having formed thereon electrically conducting layer comprised of a copper-containing material is provided. A layer of reactive material is then formed on the surface of the substrate. This is followed by reacting a portion of the layer of reactive material with the copper-containing material of the conducting layer to form an alloy material on the conducting layer. Unalloyed reactive material is removed from the substrate by heating the substrate to a temperature where the unalloyed reactive material desorbs from the surface of the substrate but where the alloy material remains in place on the substrate surface thereby forming a self-aligned capping layer. In another embodiment, the process is repeated iteratively until a capping layer having the desired thickness is formed.
摘要翻译：本发明的实施方案包括在含铜层上形成的合金材料的覆盖层，该合金构造成防止铜通过覆盖层的扩散。在另一个实施例中，合金覆盖层与下面的导电层自对准。具体实施方案包括由铜的合金与包括但不限于钙，锶，钡和其它碱土金属的材料形成的封盖层，以及来自其它基团的材料，例如镉或硒。本发明还包括在含铜导电结构上形成合金覆盖层的方法。一种这样的方法包括提供其上形成有由含铜材料构成的导电层并在导电层上形成合金覆盖层的衬底。在另一方法实施例中，形成合金覆盖层包括在导电层上形成自对准覆盖层。在用于在含铜导电结构上形成覆盖层的另一方法实施例中，其上形成有导电层的基板包括提供含铜材料。然后在衬底的表面上形成一层反应性材料。然后使反应性材料层的一部分与导电层的含铜材料反应，以在导电层上形成合金材料。通过将衬底加热到非合金反应物质从衬底表面脱附的温度，但是合金材料保留在衬底表面上的适当位置，从而形成非对准的覆盖层，从衬底去除非合金反应性材料。在另一个实施方案中，迭代地重复该过程，直到形成具有所需厚度的覆盖层。

10. 发明授权

US06552743B1 Digital camera-ready printer 失效
标题翻译：数码相机就绪打印机
公开(公告)号：US06552743B1
公开(公告)日：2003-04-22
申请号：US09057431
申请日：1998-04-08
申请人： Paul Rissman
发明人： Paul Rissman
IPC分类号： H04N5225
CPC分类号： H04N1/6094 , H04N1/00204 , H04N1/00278 , H04N1/40 , H04N2201/0044 , H04N2201/0049 , H04N2201/0055 , H04N2201/0056 , H04N2201/0068 , H04N2201/0074 , H04N2201/0082 , H04N2201/0084 , H04N2201/0089 , H04N2201/3288 , H04N2201/33378
摘要： A system and method utilize a digital camera-ready printer which can print directly from a variety of conventional digital cameras on the market. The digital camera-ready printer includes a camera interface that can link with a digital camera in different modes to transfer frames of digital image data from the digital cameras to the digital camera-ready printer. Preferably, the camera interface includes a hot shoe receptor to establish a convenient hot shoe link between the digital camera and the digital camera-ready printer. The digital camera-ready printer includes a processor that can identify the coupled digital camera in order to instruct the digital camera to transmit the frames of digital image data. The processor can also convert the format of the digital image data to a predetermined image file format. The processor of the digital camera-ready printer along with a display device allows a user to edit and manipulate an electronic image represented by a single frame of digital image data prior to printing.
摘要翻译：一种系统和方法利用可以直接从市场上的各种传统数字照相机打印的数码照相机打印机。数码相机就绪打印机包括可以以不同模式与数码相机连接的相机接口，将数字图像数据的帧从数码相机传送到数码相机就绪打印机。优选地，相机接口包括热靴接收器，以在数字照相机和数码照相机就绪打印机之间建立方便的热靴链接。数字照相机打印机包括能够识别耦合的数字照相机以便指示数字照相机发送数字图像数据帧的处理器。处理器还可以将数字图像数据的格式转换成预定的图像文件格式。数字照相机就绪打印机的处理器以及显示设备允许用户在打印之前编辑和操纵由单帧数字图像数据表示的电子图像。

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