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    • 8. 发明授权
    • Extreme ultraviolet soft x-ray projection lithographic method and mask devices
    • 极紫外线软X射线投影光刻法和掩模装置
    • US06465272B1
    • 2002-10-15
    • US09615621
    • 2000-07-13
    • Claude L. Davis, Jr.Kenneth E. HrdinaRobert SabiaHarrie J. Stevens
    • Claude L. Davis, Jr.Kenneth E. HrdinaRobert SabiaHarrie J. Stevens
    • H01L2100
    • G21K1/062B82Y10/00B82Y40/00G02B17/06G03F1/24G03F1/60G03F7/702G03F7/70233G03F7/70283G03F7/70891G03F7/70958Y10S438/947Y10S438/974
    • The present invention relates to reflective masks and their use for reflecting extreme ultraviolet soft x-ray photons to enable the use of extreme ultraviolet soft x-ray radiation projection lithographic methods and systems for producing integrated circuits and forming patterns with extremely small feature dimensions. The projection lithographic method includes providing an illumination sub-system for producing and directing an extreme ultraviolet soft x-ray radiation &lgr; from an extreme ultraviolet soft x-ray source; providing a mask sub-system illuminated by the extreme ultraviolet soft x-ray radiation &lgr; produced by the illumination sub-system and providing the mask sub-system includes providing a patterned reflective mask for forming a projected mask pattern when illuminated by radiation &lgr;. Providing the patterned reflective mask includes providing a Ti doped high purity SiO2 glass wafer with a patterned absorbing overlay overlaying the reflective multilayer coated Ti doped high purity SiO2 glass defect free wafer surface that has an Ra roughness≦0.15 nm. The method includes providing a projection sub-system and a print media subject wafer which has a radiation sensitive wafer surface wherein the projection sub-system projects the projected mask pattern from the patterned reflective mask onto the radiation sensitive wafer surface.
    • 本发明涉及反射掩模及其用于反射极紫外软x射线光子的用途,以使得能够使用极紫外线软X射线辐射投影光刻方法和系统来生产集成电路并形成具有极小特征尺寸的图案。 投影光刻方法包括提供用于产生和引导来自极紫外线软X射线源的极紫外线软X射线辐射羔羊的照明子系统; 提供由由照明子系统产生的极紫外线软X射线辐射灯照亮的掩模子系统,并提供掩模子系统包括提供用于在被辐射线照射时形成投影掩模图案的图案化反射掩模。 提供图案化的反射掩模包括提供Ti掺杂的高纯SiO 2玻璃晶片,其具有覆盖反射多层涂覆的Ti掺杂的高纯度SiO 2玻璃无缺陷晶片表面的图案化吸收层,其具有Ra粗糙度<= 0.15nm。 该方法包括提供具有辐射敏感晶片表面的投影子系统和打印介质对象晶片,其中投影子系统将投影的掩模图案从图案化反射掩模投影到辐射敏感晶片表面上。