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    • 5. 发明申请
    • Deposition of tensile and compressive stressed materials for semiconductors
    • 用于半导体的拉伸和压应力材料的沉积
    • US20060264063A1
    • 2006-11-23
    • US11134981
    • 2005-05-23
    • Lewis SternJohn Albright
    • Lewis SternJohn Albright
    • H01L21/31
    • H01L21/0217C23C16/345H01L21/02274H01L21/3185
    • A method of depositing tensile or compressively stressed silicon nitride on a substrate is described. Silicon nitride having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and nitrogen-containing gas, maintained in an electric field having a strength of from about 25 V/mil to about 300 V/mil. The electric field is formed by applying a voltage at a power level of less than about 60 Watts across electrodes that are spaced apart by a separation distance that is at least about 600 mils. Alternatively, silicon nitride having a compressive stress with an absolute value of at least about 2000 MPa can be formed in an electric field having a strength of from about 400 V/mil to about 800 V/mil.
    • 描述了在衬底上沉积拉伸或压应力氮化硅的方法。 具有至少约1200MPa的绝对值的拉伸应力的氮化硅可以由包含含硅气体和含氮气体的工艺气体沉积,该工艺气体保持在具有约25V /密度的强度的电场至约 300 V / mil 通过以间隔至少约600密耳的间隔距离的电极施加功率水平小于约60瓦特的电压来形成电场。 或者,具有绝对值至少约2000MPa的压缩应力的氮化硅可以在强度为约400V / mil至约800V / mil的电场中形成。
    • 6. 发明授权
    • Deposition of tensile and compressive stressed materials
    • 拉伸和压应力材料的沉积
    • US07247582B2
    • 2007-07-24
    • US11134981
    • 2005-05-23
    • Lewis SternJohn Albright
    • Lewis SternJohn Albright
    • H01L21/31
    • H01L21/0217C23C16/345H01L21/02274H01L21/3185
    • A method of depositing tensile or compressively stressed silicon nitride on a substrate is described. Silicon nitride having a tensile stress with an absolute value of at least about 1200 MPa can be deposited from process gas comprising silicon-containing gas and nitrogen-containing gas, maintained in an electric field having a strength of from about 25 V/mil to about 300 V/mil. The electric field is formed by applying a voltage at a power level of less than about 60 Watts across electrodes that are spaced apart by a separation distance that is at least about 600 mils. Alternatively, silicon nitride having a compressive stress with an absolute value of at least about 2000 MPa can be formed in an electric field having a strength of from about 400 V/mil to about 800 V/mil.
    • 描述了在衬底上沉积拉伸或压应力氮化硅的方法。 具有至少约1200MPa的绝对值的拉伸应力的氮化硅可以由包含含硅气体和含氮气体的工艺气体沉积,该工艺气体保持在具有约25V /密度的强度的电场至约 300 V / mil 通过以间隔至少约600密耳的间隔距离的电极施加功率水平小于约60瓦特的电压来形成电场。 或者,具有绝对值至少约2000MPa的压缩应力的氮化硅可以在强度为约400V / mil至约800V / mil的电场中形成。