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1. 发明授权

US08753989B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08753989B2
公开(公告)日：2014-06-17
申请号：US13365229
申请日：2012-02-02
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer, such as a silicon nitride layer, may be achieved utilizing one or more techniques employed either alone or in combination. In one embodiment, a silicon nitride film having high tensile stress may be formed by depositing the silicon nitride film in the presence of a porogen. The deposited silicon nitride film may be exposed to at least one treatment selected from a plasma or ultraviolet radiation to liberate the porogen. The silicon nitride film may be densified such that a pore resulting from liberation of the porogen is reduced in size, and Si—N bonds in the silicon nitride film are strained to impart a tensile stress in the silicon nitride film. In another embodiment, tensile stress in a silicon nitride film may be enhanced by depositing a silicon nitride film in the presence of a nitrogen-containing plasma at a temperature of less than about 400° C., and exposing the deposited silicon nitride film to ultraviolet radiation.
摘要翻译：沉积层（例如氮化硅层）中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。在一个实施例中，可以通过在致孔剂的存在下沉积氮化硅膜来形成具有高拉伸应力的氮化硅膜。沉积的氮化硅膜可以暴露于选自等离子体或紫外线辐射的至少一种处理以释放致孔剂。可以使氮化硅膜致密化，使致孔剂释放产生的孔尺寸减小，并且氮化硅膜中的Si-N键变形以在氮化硅膜中产生拉伸应力。在另一个实施例中，可以通过在低于约400℃的温度下在含氮等离子体的存在下沉积氮化硅膜来增强氮化硅膜中的拉伸应力，并将沉积的氮化硅膜暴露于紫外线辐射。

2. 发明申请

US20130050892A1 MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 审中-公开
标题翻译：测量和控制脉冲RF偏置加工中的波动潜能
公开(公告)号：US20130050892A1
公开(公告)日：2013-02-28
申请号：US13663393
申请日：2012-10-29
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/683
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

3. 发明授权

US08192576B2 Methods of and apparatus for measuring and controlling wafer potential in pulsed RF bias processing 有权
标题翻译：用于测量和控制脉冲RF偏置处理中的晶片电位的方法和装置
公开(公告)号：US08192576B2
公开(公告)日：2012-06-05
申请号：US11805607
申请日：2007-05-23
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： H01L21/00 , C23C16/00 , C23C14/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided to detect and control a voltage potential applied in a plasma chamber for processing a semiconductor wafer. The plasma chamber includes circuitry for monitoring and adjusting a pulsed RF bias voltage signal to be applied to a chuck in the plasma chamber, where the chuck is configured to mount the wafer for processing. The circuitry includes an RF bias voltage detector for detecting individual pulses of the pulsed RF bias voltage signal applied to the chuck. A timing circuit is provided for determining a time for sampling each of the individual detected pulses and a sample and hold circuit. The sample and hold circuit is triggered at the sampling time for sampling each of the individual detected pulses to determine and hold a voltage value representing a peak peak-to-peak voltage value of each individual detected pulse, and the sample and hold circuit is configured to provide a feedback signal representing the peak peak-to-peak voltage value of at least one of the detected pulses. Further included is a feedback circuit for adjusting the voltage of the pulsed RF bias voltage signal applied to the chuck according to a difference between the feedback signal and a desired voltage value of the RF bias voltage signal.
摘要翻译：提供了用于检测和控制施加在等离子体室中用于处理半导体晶片的电压电势的装置和方法。等离子体室包括用于监测和调整要施加到等离子体室中的卡盘的脉冲RF偏置电压信号的电路，其中卡盘被配置为安装用于处理的晶片。电路包括用于检测施加到卡盘的脉冲RF偏置电压信号的各个脉冲的RF偏置电压检测器。提供了一种定时电路，用于确定对各个检测到的脉冲进行采样的时间和采样和保持电路。采样和保持电路在采样时间被触发，以对各个检测到的脉冲进行采样，以确定和保持表示每个单独检测到的脉冲的峰值峰峰值电压值的电压值，并且采样和保持电路被配置以提供代表检测到的脉冲中至少一个的峰值峰 - 峰电压值的反馈信号。还包括反馈电路，用于根据反馈信号和RF偏置电压信号的期望电压值之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压。

4. 发明申请

US20160347126A1 A TIRE WITH A NEW INTERNAL STRUCTURE INCLUDING AUTOMATIC INFLATABLE GAS-CHAMBERS 审中-公开
标题翻译：具有新内部结构的轮胎，包括自动充气气囊
公开(公告)号：US20160347126A1
公开(公告)日：2016-12-01
申请号：US15106829
申请日：2015-07-13
申请人： Rongping WANG
发明人： Rongping WANG
IPC分类号： B60C17/02
CPC分类号： B60C17/02 , B60C5/20 , B60C5/24 , B60C19/122 , B60C23/12 , B60C29/007
摘要： A tire with a new internal structure including automatic inflatable gas-chambers, assembly includes a connection arrangement comprising, sequentially, a rubber tire, a gas-chamber layer, a hollow layer and a metal wheel hub, from outside to inside, wherein a check valve is installed at a connection position between each gas-chamber of the gas-chamber layer and the hollow layer to inflate the connected gas-chamber automatically, meanwhile, prevent a backflow of the gas from the gas-chamber. The check valve described in the present application is a rubber valve, including a rubber valve body and a rubber valve plate, wherein, a center hole and an inflation hole are opened at the center of the rubber valve body, and a plane of the rubber valve body and a plane of the rubber valve plate are arranged in parallel, and meanwhile a center valve spindle contained by the rubber valve plate inserts the center hole of the rubber valve body. The present application can supply gas to keep a desired pressure in the gas-chambers whenever necessary to maintain a pressure balance in the entire circumference of the tire, in order to keep stability when driving, to resist being punctured and stabbed. Therefore, the tire has a great safety performance and a long service life.
摘要翻译：具有包括自动充气气室的新内部结构的轮胎组件包括从外部到内部依次包括橡胶轮胎，气室层，中空层和金属轮毂的连接装置，其中检查阀被安装在气室层的各个气室与中空层之间的连接位置处，以自动地使连接的气室膨胀，同时防止气体从气室的回流。本申请所述的止回阀是橡胶阀，包括橡胶阀体和橡胶阀板，其中，中心孔和充气孔在橡胶阀体的中心开口，并且橡胶的平面阀体和橡胶阀板的平面平行布置，同时由橡胶阀板容纳的中心阀芯插入橡胶阀体的中心孔。为了在驾驶时保持稳定性，为了防止被刺穿和刺伤，本申请可以在必要时提供气体以在气室中保持期望的压力以保持轮胎的整个周边的压力平衡。因此，轮胎安全性能好，使用寿命长。

5. 发明申请

US20120206127A1 MEASURING AND CONTROLLING WAFER POTENTIAL IN PULSED RF BIAS PROCESSING 有权
标题翻译：测量和控制脉冲RF偏置加工中的波动潜能
公开(公告)号：US20120206127A1
公开(公告)日：2012-08-16
申请号：US13456122
申请日：2012-04-25
申请人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
发明人： Andras Kuthi , Stephen Hwang , James C. Vetter , Greg Eilenstine , Rongping Wang , Tuan Ngo
IPC分类号： G01R19/00
CPC分类号： H01J37/32935 , H01J37/321 , H01J37/32174 , H01L22/26
摘要： Apparatus and methods are provided for monitoring a pulsed RF bias signal applied to a chuck in a processing chamber. One method includes operations for detecting voltage values of individual pulses of the pulsed RF bias voltage, and for determining the time for sampling the value of each individual detected pulse. At the sampling time for each pulse, a particular voltage value of the respective individual detected pulse is sampled and the particular voltage value is held. Each particular voltage value represents a characteristic peak-to-peak voltage value of each individual detected pulse. A feedback signal representing the characteristic peak-to-peak voltage value for a voltage envelope of one of the individual detected pulses is generated, and the voltage of the pulsed RF bias voltage signal applied to the chuck is adjusted according to a difference between the feedback signal and a desired voltage value of the pulsed RF bias voltage signal.
摘要翻译：提供了用于监测施加到处理室中的卡盘的脉冲RF偏置信号的装置和方法。一种方法包括用于检测脉冲RF偏置电压的各个脉冲的电压值的操作，以及用于确定对每个检测到的脉冲的值进行采样的时间。在每个脉冲的采样时间，对各个检测到的脉冲的特定电压值进行采样，并且保持特定的电压值。每个特定电压值表示每个单独检测到的脉冲的特征峰 - 峰电压值。产生表示各个检测脉冲之一的电压包络的特征峰 - 峰值电压值的反馈信号，并且根据反馈之间的差异来调整施加到卡盘的脉冲RF偏置电压信号的电压信号和脉冲RF偏置电压信号的期望电压值。

6. 发明授权

US07571698B2 Low-frequency bias power in HDP-CVD processes 失效
标题翻译： HDP-CVD工艺中的低频偏置功率
公开(公告)号：US07571698B2
公开(公告)日：2009-08-11
申请号：US11034515
申请日：2005-01-10
申请人： Rongping Wang , Canfeng Lai , Yuri Trachuk , Siamak Salimian
发明人： Rongping Wang , Canfeng Lai , Yuri Trachuk , Siamak Salimian
IPC分类号： C23C16/00 , C23C14/00
CPC分类号： H01J37/321
摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
摘要翻译：衬底处理系统具有限定处理室的壳体。设置在处理室内的衬底保持器在衬底处理期间支撑衬底。气体输送系统将气体引入处理室。压力控制系统在处理室内维持选定的压力。高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。射频偏置系统以小于5MHz的频率在衬底上产生电偏压。控制器控制气体传送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

7. 发明申请

US20060105106A1 Tensile and compressive stressed materials for semiconductors 审中-公开
标题翻译：用于半导体的拉伸和压应力材料
公开(公告)号：US20060105106A1
公开(公告)日：2006-05-18
申请号：US11055936
申请日：2005-02-11
申请人： Mihaela Balseanu , Kee Jung , Lihua Huang , Li-Qun Xia , Rongping Wang , Derek Witty , Lewis Stern , Martin Seamons , Hichem M'Saad , Michael Kwan
发明人： Mihaela Balseanu , Kee Jung , Lihua Huang , Li-Qun Xia , Rongping Wang , Derek Witty , Lewis Stern , Martin Seamons , Hichem M'Saad , Michael Kwan
IPC分类号： C23C16/00 , B05D3/00 , H05H1/24
CPC分类号： H01L21/0217 , C23C16/345 , C23C16/5096 , C23C16/56 , H01J37/32082 , H01L21/02274 , H01L21/3105 , H01L21/3185 , H01L2924/0002 , H01L2924/00
摘要： A stressed film is formed on a substrate. The substrate is placed in a process zone and a plasma is formed of a process gas provided in the process zone, the process gas having silicon-containing gas and nitrogen-containing gas. A diluent gas such as nitrogen can also be added. The as-deposited stressed material can be exposed to ultraviolet radiation or electron beams to increase the stress value of the deposited material. In addition or in the alternative, a nitrogen plasma treatment can be used to increase the stress value of the material during deposition. Pulsed plasma methods to deposit stressed materials are also described.
摘要翻译：在基板上形成应力膜。将基板放置在处理区中，并且等离子体由设置在处理区中的工艺气体形成，工艺气体具有含硅气体和含氮气体。还可以加入稀释气体如氮气。沉积的应力材料可以暴露于紫外线辐射或电子束以增加沉积材料的应力值。另外或替代地，可以使用氮等离子体处理来增加沉积期间材料的应力值。还描述了用于沉积应力材料的脉冲等离子体方法。

8. 发明授权

US08129290B2 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US08129290B2
公开(公告)日：2012-03-06
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael S. Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

9. 发明申请

US20090263594A1 LOW-FREQUENCY BIAS POWER IN HDP-CVD PROCESSES 审中-公开
标题翻译： HDP-CVD工艺中的低频偏置功率
公开(公告)号：US20090263594A1
公开(公告)日：2009-10-22
申请号：US12493878
申请日：2009-06-29
申请人： Rongping Wang , Canfeng Lai , Yuri Trachuk , Siamak Salimian
发明人： Rongping Wang , Canfeng Lai , Yuri Trachuk , Siamak Salimian
IPC分类号： C23C16/50 , C23C16/40
CPC分类号： H01J37/321
摘要： A substrate processing system has a housing that defines a process chamber. A substrate holder disposed within the process chamber supports a substrate during substrate processing. A gas-delivery system introduces a gas into the process chamber. A pressure-control system maintains a selected pressure within the process chamber. A high-density plasma generating system forms a plasma having a density greater than 1011 ions/cm3 within the process chamber. A radio-frequency bias system generates an electrical bias on the substrate at a frequency less than 5 MHz. A controller controls the gas-delivery system, the pressure-control system, the high-density plasma generating system, and the radio-frequency bias system.
摘要翻译：衬底处理系统具有限定处理室的壳体。设置在处理室内的衬底保持器在衬底处理期间支撑衬底。气体输送系统将气体引入处理室。压力控制系统在处理室内维持选定的压力。高密度等离子体发生系统在处理室内形成密度大于1011离子/ cm3的等离子体。射频偏置系统以小于5MHz的频率在衬底上产生电偏压。控制器控制气体输送系统，压力控制系统，高密度等离子体发生系统和射频偏置系统。

10. 发明申请

US20060269693A1 Method to increase tensile stress of silicon nitride films using a post PECVD deposition UV cure 有权
标题翻译：使用后PECVD沉积UV固化来增加氮化硅膜的拉伸应力的方法
公开(公告)号：US20060269693A1
公开(公告)日：2006-11-30
申请号：US11400275
申请日：2006-04-07
申请人： Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
发明人： Mihaela Balseanu , Michael Cox , Li-Qun Xia , Mei-Yee Shek , Jia Lee , Vladimir Zubkov , Tzu-Fang Huang , Rongping Wang , Isabelita Roflox , Hichem M'Saad
IPC分类号： H05H1/24 , B05D3/00
CPC分类号： C23C16/345 , C23C16/45523 , C23C16/56 , H01L21/3141 , H01L21/3185 , H01L21/823412 , H01L21/82345 , H01L21/823807 , H01L21/823835
摘要： High tensile stress in a deposited layer such as silicon nitride, may be achieved utilizing one or more techniques, employed alone or in combination. High tensile stress may be achieved by forming a silicon-containing layer on a surface by exposing the surface to a silicon-containing precursor gas in the absence of a plasma, forming silicon nitride by exposing said silicon-containing layer to a nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride created thereby. High tensile stress may also be achieved by exposing a surface to a silicon-containing precursor gas in a first nitrogen-containing plasma, treating the material with a second nitrogen-containing plasma, and then repeating these steps to increase a thickness of the silicon nitride formed thereby. In another embodiment, tensile film stress is enhanced by deposition with porogens that are liberated upon subsequent exposure to UV radiation or plasma treatment.
摘要翻译：沉积层如氮化硅中的高拉伸应力可以利用单独使用或组合使用的一种或多种技术来实现。可以通过在不存在等离子体的情况下将表面暴露于含硅前体气体而在表面上形成含硅层来形成高拉伸应力，通过将含硅层暴露于含氮等离子体而形成氮化硅，然后重复这些步骤以增加由此产生的氮化硅的厚度。也可以通过在第一含氮等离子体中将表面暴露于含硅前体气体，用第二含氮等离子体处理该材料，然后重复这些步骤以增加氮化硅的厚度来实现高拉伸应力由此形成。在另一个实施方案中，拉伸膜应力通过在随后暴露于UV辐射或等离子体处理时释放的孔原子沉积而增强。

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