专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09772208B2 Thermal type flowmeter with particle guide member 有权
公开(公告)号：US09772208B2
公开(公告)日：2017-09-26
申请号：US14359161
申请日：2012-01-18
申请人： Hiroshi Nakano , Masahiro Matsumoto , Satoshi Asano , Keiji Hanzawa
发明人： Hiroshi Nakano , Masahiro Matsumoto , Satoshi Asano , Keiji Hanzawa
IPC分类号： G01F1/692 , G01F1/684 , G01F1/696 , G01F15/00 , G01F5/00
CPC分类号： G01F1/692 , G01F1/6842 , G01F1/696 , G01F5/00 , G01F15/00
摘要： Provided is a thermal type flowmeter in which contamination of a sensor element is reduced. The flowmeter includes a sensor element including a heating resistor formed in a thin film part, the thin film part being provided on a diaphragm formed on a substrate; a support member to locate the sensor element thereon; a secondary channel that includes part of the support member and takes in part of intake air flowing through an air intake pipeline; and a guide member provided on the support member or the sensor element that lies on a line L that extends along an air flow in the secondary channel and passing over the thin film part, the guide member allowing fine particles to be guided in a direction away from the line L, the fine particles coming together with an air flow along the surface of the support member or the sensor element.

2. 发明授权

US08843325B2 Individual information determining method, individual information determining device, electronic apparatus, and individual information determining program 有权
标题翻译：个人信息确定方法，个人信息确定装置，电子装置和个人信息确定程序
公开(公告)号：US08843325B2
公开(公告)日：2014-09-23
申请号：US13430285
申请日：2012-03-26
申请人： Kazuhiro Nakagawa , Hatsume Uno , Masahiro Matsumoto , Tomoko Katsuhara , Yuuki Watanabe
发明人： Kazuhiro Nakagawa , Hatsume Uno , Masahiro Matsumoto , Tomoko Katsuhara , Yuuki Watanabe
IPC分类号： A61B5/00 , G01N33/72 , G01N33/94 , G01N33/53 , G06F19/00
CPC分类号： G01N33/53 , G01N33/721 , G01N33/9413 , G06F19/00 , G16H50/30
摘要： Disclosed in an individual information determining method in which individual information of a subject is determined based on one or a plurality of pieces of biomolecule data collected from a surface of a body surface of the subject.
摘要翻译：公开在个人信息确定方法中，其中基于从受试者的体表的表面收集的一个或多个生物分子数据确定受试者的个体信息。

3. 发明授权

US08779337B2 Thermal type flow sensor having bridge circuit and adjustment circuit 有权
标题翻译：具有桥式电路和调节电路的热式流量传感器
公开(公告)号：US08779337B2
公开(公告)日：2014-07-15
申请号：US13542426
申请日：2012-07-05
申请人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
发明人： Hiroshi Nakano , Masamichi Yamada , Masahiro Matsumoto , Izumi Watanabe
IPC分类号： B23K10/00
CPC分类号： G01F1/692 , G01F1/684 , G01F1/6845 , G01F1/698
摘要： A thermal type flow sensor measures a flow rate of a fluid by means of a heat resistive element having a temperature dependency. The sensor is comprised of: plural heat resistive elements used for a flow rate measurement; and a driver circuit for controlling a current applied to these heat resistive elements to cause their heating. The driver circuit is configured to sense a resistance change of a lower-temperature side heat resistive element among the plural heat resistive elements and to control the current to be applied to the plural heat resistive elements in accordance with a sensed value of the lower-resistance's variation.
摘要翻译：热式流量传感器通过具有温度依赖性的耐热元件来测量流体的流量。传感器包括：用于流量测量的多个热阻元件; 以及用于控制施加到这些热阻元件以引起其加热的电流的驱动器电路。驱动电路被配置为感测多个耐热元件中的低温侧热电阻元件的电阻变化，并且根据下电阻元件的感测值来控制施加到多个耐热元件的电流变异。

4. 发明申请

US20140167781A1 SENSOR DEVICE 审中-公开
标题翻译：传感器设备
公开(公告)号：US20140167781A1
公开(公告)日：2014-06-19
申请号：US14235933
申请日：2011-08-03
申请人： Satoshi Asano , Masahiro Matsumoto , HIroshi Nakano , Keiji Hanzawa
发明人： Satoshi Asano , Masahiro Matsumoto , HIroshi Nakano , Keiji Hanzawa
IPC分类号： G01R1/18 , G01D7/00
CPC分类号： G01R1/18 , B81B3/0086 , G01D7/00
摘要： An objective of the present invention is to provide a sensor device with an increased accuracy. In order to achieve the objective, provided is a sensor device includes: an external terminal 2 to which an external device is connected; a ground terminal 3 connected to the ground; an internal circuit 4 that generates a sensor output signal; and a protection circuit 5 having a resistive element 6 and a capacitative element 7 between the external terminal and the internal circuit, in which the capacitative element is formed of a pair of electrodes having different conductivities from each other and a lower-conductive electrode 7a of the electrodes which has a smaller conductivity is connected to the external terminal and the internal circuit.
摘要翻译：本发明的目的是提供一种具有更高精度的传感器装置。为了实现该目的，提供了一种传感器装置，包括：连接有外部装置的外部端子2; 连接到地面的接地端子3; 产生传感器输出信号的内部电路4; 以及保护电路5，其在外部端子和内部电路之间具有电阻元件6和电容元件7，其中电容元件由彼此具有不同电导率的一对电极形成，并且电容元件7的下导电电极7a 具有较小导电性的电极连接到外部端子和内部电路。

5. 发明申请

US20130199280A1 Thermal Flow Meter 有权
标题翻译：热流量计
公开(公告)号：US20130199280A1
公开(公告)日：2013-08-08
申请号：US13813094
申请日：2011-07-28
申请人： Hiroshi Nakano , Masahiro Matsumoto , Satoshi Asano , Keiji Hanzawa
发明人： Hiroshi Nakano , Masahiro Matsumoto , Satoshi Asano , Keiji Hanzawa
IPC分类号： G01F1/692
CPC分类号： G01F1/692 , G01F1/6842 , G01F1/699
摘要： An object of the present invention is to provide a thermal type flow rate sensor that offers high sensitivity and improved reliability. A sensor element according to the present invention includes a semiconductor substrate, a cavity portion formed on the semiconductor substrate, a heating resistor formed on the cavity portion via an electrically insulating film, a heating temperature sensor for detecting heating temperature of the heating resistor, and a driving circuit for controlling the heating temperature of the heating resistor using the temperature detected by the heating temperature sensor. The heating temperature sensor comprises temperature-sensitive resistors having resistance values varying according to temperature and disposed upstream and downstream of a direction of flow of a fluid to be measured relative to the heating resistor and on upper and lower sides in a direction perpendicular to the direction of flow of the fluid to be measured relative to the heating resistor.
摘要翻译：本发明的目的是提供一种提供高灵敏度和改善的可靠性的热式流量传感器。根据本发明的传感器元件包括半导体衬底，形成在半导体衬底上的空腔部分，通过电绝缘膜形成在空腔部分上的发热电阻器，用于检测加热电阻器的加热温度的加热温度传感器，以及使用由加热温度传感器检测到的温度来控制加热电阻器的加热温度的驱动电路。加热温度传感器包括具有根据温度变化的电阻值的温度敏感电阻器，并且设置在相对于加热电阻器的被测量流体的流动方向的上游和下游以及垂直于该方向的方向上下侧要测量的流体相对于加热电阻器的流动。

6. 发明授权

US08504762B2 Flash memory storage device with data interface 有权
标题翻译：具有数据接口的闪存存储设备
公开(公告)号：US08504762B2
公开(公告)日：2013-08-06
申请号：US13486132
申请日：2012-06-01
申请人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
发明人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
IPC分类号： G06F12/00 , G06F13/00 , G06F13/28
CPC分类号： G06F11/1441 , G06F3/0616 , G06F3/0656 , G06F3/0679 , G06F12/0246 , G06F2212/7211
摘要： A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.
摘要翻译：提供一种实现非易失性存储器的重写耐久性的改进并且提高写入和读取操作的数据传输速率的存储装置，其包括非易失性存储器; 用于存储非易失性存储器的文件管理信息的易失性存储器; 用于控制非易失性存储器和易失性存储器的控制器; 以及电源维持单元，用于在电源关闭时向非易失性存储器，易失性存储器或控制器供电。控制器在通电时读取非易失性存储器中的文件管理信息，并将其写入易失性存储器，并且基于易失性存储器中的文件管理信息执行读写操作，并且在易失性存储器中执行文件管理信息存储器在电源关闭时写入非易失性存储器。

7. 发明授权

US08359919B2 Thermal humidity sensor 有权
标题翻译：热湿度传感器
公开(公告)号：US08359919B2
公开(公告)日：2013-01-29
申请号：US12855347
申请日：2010-08-12
申请人： Masahiro Matsumoto , Hiroshi Nakano , Keiji Hanzawa , Masamichi Yamada
发明人： Masahiro Matsumoto , Hiroshi Nakano , Keiji Hanzawa , Masamichi Yamada
IPC分类号： G01N27/12 , G01N27/18 , G01F1/69
CPC分类号： G01N27/18
摘要： Provided is a high-precision, mechanically robust thermal humidity sensor. A detecting element 1 of the thermal humidity sensor of the present invention has a diaphragm (a bridge structure) 2 formed on a planar substrate which is formed from a material with high thermal conductivity such as silicon or ceramic. Formed on the diaphragm 2 are temperature detecting resistors 4, 5, 6, and 7 and a heating resistor 3 arranged in a manner surrounding the temperature detecting resistors. Humidity is detected based on the outputs of the temperature detecting resistors 4, 5, 6, and 7. Accordingly, humidity measurement errors that can possibly occur due to the leakage of heat through the diaphragm 2 to the planar substrate can be reduced.
摘要翻译：提供了一种高精度，机械坚固的热湿度传感器。本发明的热湿度传感器的检测元件1具有形成在由诸如硅或陶瓷等导热性高的材料形成的平面基板上的隔膜（桥结构）2。形成在隔膜2上的是温度检测电阻4,5,6和7以及围绕温度检测电阻器布置的加热电阻3。基于温度检测电阻4,5,6和7的输出检测湿度。因此，可以减少由于通过隔膜2的热量泄漏到平面基板而可能发生的湿度测量误差。

8. 发明授权

US08302476B2 Angular velocity measuring device 失效
标题翻译：角速度测量装置
公开(公告)号：US08302476B2
公开(公告)日：2012-11-06
申请号：US12376244
申请日：2006-09-15
申请人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
发明人： Masahiro Matsumoto , Yasushi Okada , Hisao Sonobe
IPC分类号： G01C19/56
CPC分类号： G01C19/5726 , G01C19/5747
摘要： Disclosed herein is an angular velocity measuring device including: first and second oscillators elastically supported on a substrate; an elastic connecting beam elastically connecting the first and the second oscillator; and an oscillating means for oscillating the first and the second oscillator for differential oscillation, wherein a viscous force generating means for suppressing in-phase oscillation of the first and the second oscillator is incorporated into the elastic connecting beam.
摘要翻译：本文公开了一种角速度测量装置，包括：弹性地支撑在基板上的第一和第二振荡器; 弹性连接梁弹性连接第一和第二振荡器; 以及用于振荡用于差动振荡的第一和第二振荡器的振荡装置，其中用于抑制第一和第二振荡器的同相振荡的粘性力产生装置并入弹性连接梁中。

9. 发明申请

US20120239865A1 STORAGE DEVICE 有权
标题翻译：储存设备
公开(公告)号：US20120239865A1
公开(公告)日：2012-09-20
申请号：US13486132
申请日：2012-06-01
申请人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
发明人： Masahiro Matsumoto , Takayuki Okinaga , Shuichiro Azuma , Shigeru Takemura , Yasuyuki Koike , Kazuki Makuni
IPC分类号： G06F12/00
CPC分类号： G06F11/1441 , G06F3/0616 , G06F3/0656 , G06F3/0679 , G06F12/0246 , G06F2212/7211
摘要： A storage device realizing an improvement in rewrite endurance of a nonvolatile memory and an improvement in data transfer rate of write and read operations is provided including a nonvolatile memory; a volatile memory for storing file management information of the nonvolatile memory; a controller for controlling the nonvolatile memory and the volatile memory; and a power supply maintaining unit for supplying power to the nonvolatile memory, the volatile memory, or the controller upon power shutdown. The controller reads the file management information in the nonvolatile memory upon power-on and writes the same in the volatile memory, and read and write operations are performed based on the file management information in the volatile memory, and the file management information in the volatile memory is written in the nonvolatile memory upon power shutdown.
摘要翻译：提供一种实现非易失性存储器的重写耐久性的改进并且提高写入和读取操作的数据传输速率的存储装置，其包括非易失性存储器; 用于存储非易失性存储器的文件管理信息的易失性存储器; 用于控制非易失性存储器和易失性存储器的控制器; 以及电源维持单元，用于在电源关闭时向非易失性存储器，易失性存储器或控制器供电。控制器在通电时读取非易失性存储器中的文件管理信息，并将其写入易失性存储器，并且基于易失性存储器中的文件管理信息执行读写操作，并且在易失性存储器中执行文件管理信息存储器在电源关闭时写入非易失性存储器。

10. 发明授权

US08232650B2 Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US08232650B2
公开(公告)日：2012-07-31
申请号：US13180202
申请日：2011-07-11
申请人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
发明人： Hiroyuki Chibahara , Atsushi Ishii , Naoki Izumi , Masahiro Matsumoto
IPC分类号： H01L23/48
CPC分类号： H01L23/02 , H01L23/522 , H01L23/585 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device wherein destruction of a sealing ring caused by cracking of an interlayer dielectric film is difficult to occur, as well as a method for manufacturing the semiconductor device, are provided. A first laminate comprises first interlayer dielectric films having a first mechanical strength. A second laminate comprises second interlayer dielectric films having a mechanical strength higher than the first mechanical strength. A first region includes first metallic layers and vias provided within the first laminate. A second region includes second metallic layers and vias provided within the second laminate. When seen in plan, the second region overlaps at least a part of the first region, is not coupled with the first region by vias, and sandwiches the second interlayer dielectric film between it and the first region.
摘要翻译：提供了难以发生由层间电介质膜的破裂引起的密封环破坏的半导体装置，以及半导体装置的制造方法。第一层压板包括具有第一机械强度的第一层间绝缘膜。第二层压体包括具有高于第一机械强度的机械强度的第二层间介电膜。第一区域包括设置在第一层压体内的第一金属层和通孔。第二区域包括设置在第二层压体内的第二金属层和通孔。当在平面图中看到时，第二区域与第一区域的至少一部分重叠，不通过通孔与第一区域耦合，并且在其与第一区域之间夹住第二层间电介质膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式