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1. 发明授权

US07651821B2 Method and system of lithography using masks having gray-tone features 失效
标题翻译：使用具有灰色特征的掩模的光刻方法和系统
公开(公告)号：US07651821B2
公开(公告)日：2010-01-26
申请号：US11102133
申请日：2005-04-08
申请人： Brian Tyrrell , Michael Fritze
发明人： Brian Tyrrell , Michael Fritze
IPC分类号： G03F1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/70 , G03F7/0002 , G03F7/2022 , G03F7/70283
摘要： A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be implemented as sub-resolution features formed by pixellation. The gray-tone features may also be realized by the local size bias of trim features on the trim mask that have dimensions near the resolution limit of the exposure system. The trim mask containing gray-tone features may have regions with different transmissivities or generate varying illumination intensities.
摘要翻译：一种方法通过第一次曝光衬底在衬底上形成图案，并且使用包含灰色特征的掩模第二次曝光衬底。灰色特征在局部调整对应于主曝光中定义的特征的区域中的曝光剂量。此外，灰色特征使得能够在衬底上形成具有不同临界尺寸的特征。灰色特征可以被实现为由像素图形成的子分辨率特征。灰色特征也可以通过修剪蒙版上的修剪特征的局部尺寸偏差来实现，其具有接近曝光系统的分辨率极限的尺寸。包含灰色特征的修剪蒙版可以具有不同透射率的区域或者产生变化的照明强度。

2. 发明授权

US07306881B2 Method and system of lithography using masks having gray-tone features 有权
标题翻译：使用具有灰色特征的掩模的光刻方法和系统
公开(公告)号：US07306881B2
公开(公告)日：2007-12-11
申请号：US10855546
申请日：2004-05-27
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03F1/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/70 , G03F7/0002 , G03F7/2022 , G03F7/70283
摘要： A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be sub-resolution features and formed by pixellation. The trim mask containing gray-tone features may have regions with different transmissivities.
摘要翻译：一种方法通过第一次曝光衬底在衬底上形成图案，并且使用包含灰色特征的掩模第二次曝光衬底。灰色特征在局部调整对应于主曝光中定义的特征的区域中的曝光剂量。此外，灰色特征使得能够在衬底上形成具有不同临界尺寸的特征。灰度特征可能是子分辨率特征，并由像素图形成。包含灰色特征的修剪蒙版可能具有不同透射率的区域。

3. 发明授权

US06884551B2 Method and system of lithography using masks having gray-tone features 失效
标题翻译：使用具有灰色特征的掩模的光刻方法和系统
公开(公告)号：US06884551B2
公开(公告)日：2005-04-26
申请号：US10234783
申请日：2002-09-04
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03F1/00 , G03F7/00 , G03F7/20 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/70 , G03F7/0002 , G03F7/2022 , G03F7/70283
摘要： A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be sub-resolution features and formed by pixellation. The trim mask containing gray-tone features may have regions with different transmissivities.
摘要翻译：一种方法通过第一次曝光衬底在衬底上形成图案，并且使用包含灰色特征的掩模第二次曝光衬底。灰色特征在局部调整对应于主曝光中定义的特征的区域中的曝光剂量。此外，灰色特征使得能够在衬底上形成具有不同临界尺寸的特征。灰度特征可能是子分辨率特征，并由像素图形成。包含灰色特征的修剪蒙版可能具有不同透射率的区域。

4. 发明授权

US06818389B2 Method of design and fabrication of integrated circuits using regular arrays and gratings 有权
标题翻译：使用规则阵列和光栅的集成电路的设计和制造方法
公开(公告)号：US06818389B2
公开(公告)日：2004-11-16
申请号：US09952185
申请日：2001-09-13
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03F700
CPC分类号： G03F7/70433 , G03F1/70 , G03F7/2026 , G03F7/70441 , G03F7/70466
摘要： A circuit fabrication and lithography process utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film. Following this, a trimming procedure is performed to remove any unwanted fine patterned features providing multiple trimmed patterns on the substrate. An optional final step adds additional features as well as the interconnect features thus forming a circuit pattern. In this manner, all fine features may be generated using the exact same density of intensity patterns, and therefore, maximum consistency between features is established without the need for optical proximity correction. The secondary exposures are substantially independent from the initial dense-feature exposure in that the exposure of one set of features and the subsequent exposure of another set of features result in separate independent resist or masking layer reactions, thus minimizing corner rounding, line end shortening and other related spatial frequency effects and unwanted exposure memory effects.
摘要翻译：电路制造和光刻工艺利用掩模，其包括致密的重复结构的特征，其导致暴露的基底膜上的宽的精细密集特征的阵列。接下来，进行修整过程以去除在衬底上提供多个修剪图案的任何不需要的精细图案特征。可选的最后一步增加了附加特征以及互连特征，从而形成电路图案。以这种方式，可以使用完全相同的强度图案密度来产生所有精细特征，因此，在不需要光学邻近校正的情况下，建立特征之间的最大一致性。二次曝光基本上独立于初始密集特征曝光，因为一组特征的曝光和另一组特征的随后曝光导致分开的独立抗蚀剂或掩蔽层反应，从而最小化拐角圆角，线端缩短和其他相关的空间频率效应和不必要的曝光记忆效应。

5. 发明授权

US07583360B2 Method for photolithography using multiple illuminations and a single fine feature mask 有权
标题翻译：使用多个照明的光刻方法和单个精细特征掩模
公开(公告)号：US07583360B2
公开(公告)日：2009-09-01
申请号：US11135197
申请日：2005-05-23
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03B27/54 , G03B27/72 , G03B27/32
CPC分类号： G03B27/48 , G03F7/70466
摘要： A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.
摘要翻译：一种方法通过使用具有其特征图案的掩模通过使具有第一组设置的照明曝光基板而在基板上形成特征图案。使用具有其特征图案的相同掩模，第二次曝光基板，照明具有第二组设置。具有其特征图案的掩模在基板的两次照射曝光之间保持固定。

6. 发明申请

US20050238965A1 Method and system of lithography using masks having gray-tone features 失效
标题翻译：使用具有灰色特征的掩模的光刻方法和系统
公开(公告)号：US20050238965A1
公开(公告)日：2005-10-27
申请号：US11102133
申请日：2005-04-08
申请人： Brian Tyrrell , Michael Fritze
发明人： Brian Tyrrell , Michael Fritze
IPC分类号： G03F1/00 , G03F7/00 , G03F7/20 , G03C5/00 , G03F9/00
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/50 , G03F1/70 , G03F7/0002 , G03F7/2022 , G03F7/70283
摘要： A method forms patterns on a substrate by exposing the substrate a first time and exposing the substrate a second time using a mask containing gray-tone features. The gray-tone features locally adjust an exposure dose in regions corresponding to features defined in the primary exposure. Moreover, the gray-tone features enable the forming of features having different critical dimensions on a substrate. The gray-tone features may be implemented as sub-resolution features formed by pixellation. The gray-tone features may also be realized by the local size bias of trim features on the trim mask that have dimensions near the resolution limit of the exposure system. The trim mask containing gray-tone features may have regions with different transmissivities or generate varying illumination intensities.
摘要翻译：一种方法通过第一次曝光衬底在衬底上形成图案，并且使用包含灰色特征的掩模第二次曝光衬底。灰色特征在局部调整对应于主曝光中定义的特征的区域中的曝光剂量。此外，灰色特征使得能够在衬底上形成具有不同临界尺寸的特征。灰色特征可以被实现为由像素图形成的子分辨率特征。灰色特征也可以通过修剪蒙版上的修剪特征的局部尺寸偏差来实现，其具有接近曝光系统的分辨率极限的尺寸。包含灰色特征的修剪蒙版可以具有不同透射率的区域或者产生变化的照明强度。

7. 发明申请

US20050221231A1 Method for photolithography using multiple illuminations and a single fine feature mask 有权
公开(公告)号：US20050221231A1
公开(公告)日：2005-10-06
申请号：US11135197
申请日：2005-05-23
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03B27/48 , G03F9/00
CPC分类号： G03B27/48 , G03F7/70466
摘要： A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.

8. 发明授权

US06934007B2 Method for photolithography using multiple illuminations and a single fine feature mask 有权
标题翻译：使用多个照明的光刻方法和单个精细特征掩模
公开(公告)号：US06934007B2
公开(公告)日：2005-08-23
申请号：US10447844
申请日：2003-05-29
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03B27/48 , G03B27/42 , G03B27/70 , G03B27/74 , G03C5/00
CPC分类号： G03B27/48 , G03F7/70466
摘要： A method forms a feature pattern on a substrate by exposing the substrate, using a mask having a pattern of features thereon, with illumination having a first set of settings. The substrate is exposed a second time, using the same mask having the pattern of features thereon, with illumination having a second set of settings. The mask having the pattern of features thereon remains stationary between the two illumination exposures of the substrate.
摘要翻译：一种方法通过使用具有其特征图案的掩模通过使具有第一组设置的照明曝光基板而在基板上形成特征图案。使用具有其特征图案的相同掩模，第二次曝光基板，照明具有第二组设置。具有其特征图案的掩模在基板的两次照射曝光之间保持固定。

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