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1. 发明授权

US06830877B2 Method for forming via and contact holes with deep UV photoresist 失效
标题翻译：用深紫外光致抗蚀剂形成通孔和接触孔的方法
公开(公告)号：US06830877B2
公开(公告)日：2004-12-14
申请号：US10038800
申请日：2001-12-31
申请人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
发明人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
IPC分类号： G03F700
CPC分类号： H01L21/31144
摘要： A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.
摘要翻译：描述了通过使用深UV光致抗蚀剂形成具有改进的纵横比的通孔开口或接触孔的方法。在该方法中，在深厚的UV光致抗蚀剂层沉积在厚氧化物层的顶部之后，深UV光致抗蚀剂层通过UV辐照的固化过程预处理至少1分钟的时间段，优选在约 1分钟和约10分钟，优选至少160℃。固化过程使深UV光致抗蚀剂材料的结构稳定，从而通过碳成分减少碳氟聚合物的形成蚀刻剂气体中的光致抗蚀剂材料和氟组分，并且随后减少了通孔开口底部的这种碳氟聚合物的涂层，否则在通孔或接触形成期间将停止蚀刻工艺。

2. 发明授权

US06821714B1 Lithography process for patterning HgI2 photonic devices 有权
标题翻译：用于图案化HgI2光子器件的平版印刷工艺
公开(公告)号：US06821714B1
公开(公告)日：2004-11-23
申请号：US09712082
申请日：2000-11-13
申请人： Mark J. Mescher , Ralph B. James , Haim Hermon
发明人： Mark J. Mescher , Ralph B. James , Haim Hermon
IPC分类号： G03F700
CPC分类号： H01L31/085 , G03F7/09 , G03F7/11
摘要： A photolithographic process forms patterns on HgI2 surfaces and defines metal sublimation masks and electrodes to substantially improve device performance by increasing the realizable design space. Techniques for smoothing HgI2 surfaces and for producing trenches in HgI2 are provided. A sublimation process is described which produces etched-trench devices with enhanced electron-transport-only behavior.
摘要翻译：光刻工艺在HgI2表面上形成图案，并且通过增加可实现的设计空间来限定金属升华掩模和电极，以显着提高器件性能。提供了平滑HgI2表面和在HgI2中产生沟槽的技术。描述了产生具有增强的仅电子传输行为的蚀刻沟槽器件的升华过程。

3. 发明授权

US06821712B2 Methods of forming resist pattern, forming electrode pattern, and manufacturing surface acoustic wave device 有权
标题翻译：形成抗蚀剂图案，形成电极图案和制造表面声波装置的方法
公开(公告)号：US06821712B2
公开(公告)日：2004-11-23
申请号：US10041214
申请日：2002-01-07
申请人： Kenji Sakaguchi , Toshiyuki Fuyutsume , Yoshihiro Koshido
发明人： Kenji Sakaguchi , Toshiyuki Fuyutsume , Yoshihiro Koshido
IPC分类号： G03F700
CPC分类号： G03F7/092 , G03F7/091 , Y10S430/151
摘要： Methods of forming a resist pattern, of forming an electrode pattern, and of manufacturing a surface acoustic wave device are provided. The resist-pattern- and the electrode-pattern-forming methods each comprise a step of forming an antireflection film for preventing ultraviolet light from diffusely reflecting to a transparent substrate. The antireflection film is formed with a semiconductor having a band gap energy of 3.4 eV or less. The reflectance is expressed by (n1−n2)2/(n1+n2)2 is 0.15 or less, wherein n1 and n2 is the refractive indexes of the substrate and the antireflection film, respectively. The resist-pattern- and the electrode-pattern-forming methods with simple processes can achieve high-quality, reliable resist patterns and electrode patterns.
摘要翻译：提供形成抗蚀剂图案，形成电极图案和制造表面声波装置的方法。抗蚀剂图案和电极图案形成方法各自包括形成用于防止紫外光漫反射到透明基板的防反射膜的步骤。抗反射膜由带隙能量为3.4eV以下的半导体形成。反射率由（n1-n2）<2> /（n1 + n2）<2>表示为0.15以下，其中n1和n2分别是基板和抗反射膜的折射率。具有简单工艺的抗蚀剂图案和电极图案形成方法可以实现高质量，可靠的抗蚀剂图案和电极图案。

4. 发明授权

US06818389B2 Method of design and fabrication of integrated circuits using regular arrays and gratings 有权
标题翻译：使用规则阵列和光栅的集成电路的设计和制造方法
公开(公告)号：US06818389B2
公开(公告)日：2004-11-16
申请号：US09952185
申请日：2001-09-13
申请人： Michael Fritze , Brian Tyrrell
发明人： Michael Fritze , Brian Tyrrell
IPC分类号： G03F700
CPC分类号： G03F7/70433 , G03F1/70 , G03F7/2026 , G03F7/70441 , G03F7/70466
摘要： A circuit fabrication and lithography process utilizes a mask including dense repetitive structures of features that result in a wide array of fine densely populated features on the exposed substrate film. Following this, a trimming procedure is performed to remove any unwanted fine patterned features providing multiple trimmed patterns on the substrate. An optional final step adds additional features as well as the interconnect features thus forming a circuit pattern. In this manner, all fine features may be generated using the exact same density of intensity patterns, and therefore, maximum consistency between features is established without the need for optical proximity correction. The secondary exposures are substantially independent from the initial dense-feature exposure in that the exposure of one set of features and the subsequent exposure of another set of features result in separate independent resist or masking layer reactions, thus minimizing corner rounding, line end shortening and other related spatial frequency effects and unwanted exposure memory effects.
摘要翻译：电路制造和光刻工艺利用掩模，其包括致密的重复结构的特征，其导致暴露的基底膜上的宽的精细密集特征的阵列。接下来，进行修整过程以去除在衬底上提供多个修剪图案的任何不需要的精细图案特征。可选的最后一步增加了附加特征以及互连特征，从而形成电路图案。以这种方式，可以使用完全相同的强度图案密度来产生所有精细特征，因此，在不需要光学邻近校正的情况下，建立特征之间的最大一致性。二次曝光基本上独立于初始密集特征曝光，因为一组特征的曝光和另一组特征的随后曝光导致分开的独立抗蚀剂或掩蔽层反应，从而最小化拐角圆角，线端缩短和其他相关的空间频率效应和不必要的曝光记忆效应。

5. 发明授权

US06818383B2 Method for forming a resist pattern and method for manufacturing a semiconductor device 失效
标题翻译：形成抗蚀剂图案的方法和用于制造半导体器件的方法
公开(公告)号：US06818383B2
公开(公告)日：2004-11-16
申请号：US10191491
申请日：2002-07-10
申请人： Kenji Kawai
发明人： Kenji Kawai
IPC分类号： G03F700
CPC分类号： G03F7/16 , G03F7/0045 , G03F7/091
摘要： In a method for forming a resist pattern, the surface of a basic substance-containing underlying film is exposed to a plasma of a carbon-containing gas to modify the surface. A chemically modifying resist film is coated on the underlying film. And the chemically modifying resist is subjected to exposure and development treatments for patterning of the chemically amplifying resist.
摘要翻译：在形成抗蚀剂图案的方法中，将含碱性物质的下层膜的表面暴露于含碳气体的等离子体以改变表面。将化学改性抗蚀剂膜涂覆在下面的膜上。对化学改性抗蚀剂进行曝光和显影处理，以进行图案化化学放大抗蚀剂。

6. 发明授权

US06808867B2 Photo-definable self-assembled materials 有权
标题翻译：可自定义的自组装材料
公开(公告)号：US06808867B2
公开(公告)日：2004-10-26
申请号：US10100108
申请日：2002-03-19
申请人： Dhaval Doshi , Hongyou Fan , Nicola Huesing , Alan Hurd , Charles Jeffrey Brinker
发明人： Dhaval Doshi , Hongyou Fan , Nicola Huesing , Alan Hurd , Charles Jeffrey Brinker
IPC分类号： G03F700
CPC分类号： G03F7/0048 , G03F7/0047 , G03F7/038 , G03F7/075
摘要： The present invention provides a mesoporous material comprising at least one region of mesoporous material patterned at a lithographic scale. The present invention also provides a a method for forming a patterned mesoporous material comprising: coating a sol on a substrate to form a film, the sol comprising: a templating molecule, a photoactivator generator, a material capable of being sol-gel processed, water, and a solvent; and exposing the film to light to form a patterned mesoporous material.
摘要翻译：本发明提供一种介孔材料，其包括在光刻尺度上图案化的介孔材料的至少一个区域。本发明还提供了一种用于形成图案化介孔材料的方法，包括：在基底上涂覆溶胶以形成膜，所述溶胶包括：模板分子，光活化剂发生剂，能够进行溶胶 - 凝胶加工的材料，水，和溶剂; 并将该膜曝光以形成图案化的介孔材料。

7. 发明授权

US06797457B2 Method for improving the resolution of optic lithography 有权
标题翻译：提高光刻分辨率的方法
公开(公告)号：US06797457B2
公开(公告)日：2004-09-28
申请号：US10119688
申请日：2002-04-11
申请人： Chih-Yung Lin
发明人： Chih-Yung Lin
IPC分类号： G03F700
CPC分类号： G03F7/0042 , G03F7/265
摘要： A method for improving the resolution of optic lithographic is disclosed. The method includes a step of forming an etched layer on the substrate, an inorganic photoresist layer is spun-on the etched layer, and an atomic layer on the inorganic photoresist layer. Then, a deep ultraviolet light is illuminated to the inorganic photoresist layer such that the acid molecular is formed from inorganic photoresist layer. Next, the atomic layer is catalyzed by acid molecular and converted to metallic oxide by active oxygen atom. After oxidation, the oxide pattern can be obtained and it is easy by etching process.
摘要翻译：公开了一种用于提高光学光刻的分辨率的方法。该方法包括在基板上形成蚀刻层的步骤，在蚀刻层上旋转无机光致抗蚀剂层，在无机光致抗蚀剂层上形成原子层。然后，对无机光致抗蚀剂层照射深紫外光，使得酸分子由无机光致抗蚀剂层形成。接下来，原子层由酸分子催化并通过活性氧原子转化为金属氧化物。氧化后，可以获得氧化物图案，并且通过蚀刻工艺容易。

8. 发明授权

US06780569B1 Post-development treatment of patterned photoresist to promote cross-linking of polymer chains 有权
标题翻译：显影处理图案化的光致抗蚀剂以促进聚合物链的交联
公开(公告)号：US06780569B1
公开(公告)日：2004-08-24
申请号：US10068282
申请日：2002-02-04
申请人： Eric Hudson , Reza Sadjadi , Daxing Ren , Wan-Lin Chen , Douglas Keil , Peter Cirigliano
发明人： Eric Hudson , Reza Sadjadi , Daxing Ren , Wan-Lin Chen , Douglas Keil , Peter Cirigliano
IPC分类号： G03F700
CPC分类号： G03F7/40
摘要： A method for creating semiconductor devices is provided. A photoresist layer is provided on a wafer. The photoresist layer is patterned. Polymers in the patterned photoresist layer are chemically cross-linked by exposure to at least one reactive chemical. The pattern in the photoresist layer is transferred to the wafer. A reaction chamber for processing a wafer with a patterned layer of photoresist material, wherein the photoresist material was patterned by exposing the photoresist material using light of a wavelength less than 248 nm is provided. A chamber is provided with a central cavity. A wafer support for supporting the wafer in the central cavity is provided. A cross-linking reactive chemical source in fluid contact with the chamber and which provides a reactive chemical which causes cross-linking of the photoresist is provided.
摘要翻译：提供了一种用于制造半导体器件的方法。在晶片上设置光致抗蚀剂层。对光致抗蚀剂层进行图案化。图案化光致抗蚀剂层中的聚合物通过暴露于至少一种反应性化学物质而被化学交联。光致抗蚀剂层中的图案被转印到晶片上。一种用于处理具有图案化的光致抗蚀剂材料层的晶片的反应室，其中通过使用波长小于248nm的光暴露光致抗蚀剂材料来对光致抗蚀剂材料进行图案化。腔室设有中心腔。提供了用于在中心腔中支撑晶片的晶片支撑件。提供了与室流体接触并提供引起光致抗蚀剂交联的反应性化学物质的交联反应性化学源。

9. 发明授权

US06777170B1 Stereolithographic patterning by variable dose light delivery 失效
标题翻译：通过可变剂量光输送的立体光刻图案
公开(公告)号：US06777170B1
公开(公告)日：2004-08-17
申请号：US09922974
申请日：2001-08-06
申请人： Theodore M. Bloomstein , Roderick R. Kunz , Stephen T. Palmacci
发明人： Theodore M. Bloomstein , Roderick R. Kunz , Stephen T. Palmacci
IPC分类号： G03F700
CPC分类号： G03F7/00 , B29C64/40 , B29K2995/0073 , G03F7/0037 , G03F7/70416
摘要： Methods for the preparation of multilayered resists are described. A first layer of photoresist is deposited onto a substrate. First portions of the first layer are exposed to a first dose of radiant energy. A second layer of photoresist is deposited at atop the first layer and second portions of the second layer are exposed to a second varied dose of radiant energy. The dose is modulated over different portions of a layer to preferentially enhance development within the interior of the structure to reduce total development times.
摘要翻译：描述制备多层抗蚀剂的方法。第一层光致抗蚀剂沉积在基底上。第一层的第一部分暴露于第一剂量的辐射能。第二层光致抗蚀剂沉积在第一层的顶部，第二层的第二部分暴露于第二变化量的辐射能。剂量在层的不同部分进行调节，以优先增强结构内部的发育，以减少总开发时间。

10. 发明授权

US06770423B2 Negative resist process with simultaneous development and silylation 失效
标题翻译：负抗蚀过程同时发展和甲硅烷基化
公开(公告)号：US06770423B2
公开(公告)日：2004-08-03
申请号：US10186660
申请日：2002-07-01
申请人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
发明人： Jörg Rottstegge , Eberhard Kühn , Waltraud Herbst , Christian Eschbaumer , Christoph Hohle , Gertrud Falk , Michael Sebald
IPC分类号： G03F700
CPC分类号： G03F7/32 , G03F7/40 , G03F7/405
摘要： The invention relates to a process for producing amplified negative resist structures in which, following exposure and contrasting of the resist in a developing step, the resist structure is simultaneously developed and silylated. This substantially simplifies the production of amplified resist structures.
摘要翻译：本发明涉及一种制备放大的负型抗蚀剂结构的方法，其中在显影步骤中的抗蚀剂曝光和对比之后，抗蚀剂结构同时显影并进行甲硅烷基化。这大大简化了放大抗蚀剂结构的生产。

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