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1. 发明申请

WO2010025099A3 HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 审中-公开
标题翻译：高密度HELICON等离子体源用于宽度的RIBBON离子束生成
公开(公告)号：WO2010025099A3
公开(公告)日：2010-04-29
申请号：PCT/US2009054724
申请日：2009-08-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BILOIU COSTEL , PEREL ALEXANDER S , SCHEUER JAY T
发明人： BILOIU COSTEL , PEREL ALEXANDER S , SCHEUER JAY T
IPC分类号： H01L21/265 , H05H1/34
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源产生高密度宽带状离子束的离子源。除了螺旋型等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介质圆筒相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双螺旋等离子体源用于产生更均匀的提取的离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

2. 发明申请

WO2010025099A2 HIGH DENSITY HELICON PLASMA SOURCE FOR WIDE RIBBON ION BEAM GENERATION 审中-公开
标题翻译：宽带宽离子束发生的高密度等离子体等离子体源
公开(公告)号：WO2010025099A2
公开(公告)日：2010-03-04
申请号：PCT/US2009/054724
申请日：2009-08-24
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , BILOIU, Costel , PEREL, Alexander, S. , SCHEUER, Jay, T.
发明人： BILOIU, Costel , PEREL, Alexander, S. , SCHEUER, Jay, T.
IPC分类号： H01L21/265 , H05H1/34
CPC分类号： H05H1/46 , H01J27/18 , H01J37/08 , H01J37/3171 , H01J2237/0817 , H01L21/26513 , H01L21/67005
摘要： An ion source, capable of generating high density wide ribbon ion beam, utilizing one or more helicon plasma sources is disclosed. In addition to the helicon plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the helicon plasma source. In one embodiment dual helicon plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个螺旋等离子体源能够产生高密度宽带状离子束的离子源。除了螺旋等离子体源之外，离子源还包括扩散室。扩散室具有沿着与螺旋等离子体源的介电柱相同的轴定向的提取孔。在一个实施例中，位于扩散腔室的相对端部上的双螺旋等离子体源用于产生更均匀的提取离子束。在另一个实施例中，使用多螺旋磁场来进一步改善提取的离子束的均匀性。

3. 发明申请

WO2006026180A2 REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
标题翻译： CMOS器件中源极和漏极寄生电容的降低
公开(公告)号：WO2006026180A2
公开(公告)日：2006-03-09
申请号：PCT/US2005/029454
申请日：2005-08-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , EROKHIN, Yuri , JEONG, Ukyo , SCHEUER, Jay, T. , WALTHER, Steven, R.
发明人： EROKHIN, Yuri , JEONG, Ukyo , SCHEUER, Jay, T. , WALTHER, Steven, R.
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66575
摘要： A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.
摘要翻译：用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并且将中和物质引入衬底中的邻近衬底 pn结以减小与pn结相关联的电容。基于半导体的器件包括具有第一和第二掺杂剂以及中和物质的半导体衬底。第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分，以减小与pn结相关的电容。

4. 发明申请

WO2010120569A3 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL 审中-公开
公开(公告)号：WO2010120569A3
公开(公告)日：2010-10-21
申请号：PCT/US2010/029583
申请日：2010-04-01
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , BILOIU, Costel , SCHEUER, Jay, T. , PEREL, Alexander, S.
发明人： BILOIU, Costel , SCHEUER, Jay, T. , PEREL, Alexander, S.
IPC分类号： H01L21/265 , H05H1/24 , H05H1/34
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.

5. 发明申请

WO2009085954A2 RF ELECTRON SOURCE FOR IONIZING GAS CLUSTERS 审中-公开
标题翻译：用于气化气体集束的射频电子源
公开(公告)号：WO2009085954A2
公开(公告)日：2009-07-09
申请号：PCT/US2008087430
申请日：2008-12-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , OLSON JOSEPH C , SCHEUER JAY T
发明人： OLSON JOSEPH C , SCHEUER JAY T
IPC分类号： H01J37/30 , H01L21/26
CPC分类号： H01J27/18 , H01J27/026 , H01J37/08 , H01J37/30 , H01J37/31 , H01J2237/061 , H01J2237/06366 , H01J2237/0812 , H01J2237/31701
摘要： The present invention discloses a system and method for generating gas cluster ion beams (GCIB) having very low metallic contaminants. Gas cluster ion beam systems are plagued by high metallic contamination, thereby affecting their utility in many applications. This contamination is caused by the use of thermionic sources, which impart contaminants and are also susceptible to short lifecycles due to their elevated operating temperatures. While earlier modifications have focused on isolating the filament from the source gas cluster as much as possible, the present invention represents a significant advancement by eliminating the thermionic source completely. In the preferred embodiment, an inductively coupled plasma and ionization region replaces the thermionic source and ionizer of the prior art. Through the use of RF or microwave frequency electromagnetic waves, plasma can be created in the absence of a filament, thereby eliminating a major contributor of metallic contaminants.
摘要翻译：本发明公开了一种具有非常低金属污染物的气体簇离子束（GCIB）的系统和方法。气体簇离子束系统受到高金属污染的困扰，从而影响其在许多应用中的应用。这种污染是由于使用热电离源引起的，这些热源能够施加污染物，并且由于其运行温度升高而对生命周期的影响也很小。虽然较早的修改集中在尽可能多地将源极气体簇隔离，但本发明通过完全消除热离子源代表了显着的进步。在优选实施例中，电感耦合等离子体和电离区取代现有技术的热离子源和离子发生器。通过使用RF或微波频率电磁波，可以在没有灯丝的情况下产生等离子体，从而消除金属污染物的主要贡献者。

6. 发明申请

WO2006026180A3 REDUCTION OF SOURCE AND DRAIN PARASITIC CAPACITANCE IN CMOS DEVICES 审中-公开
标题翻译：降低CMOS器件中的源极和漏极寄生电容
公开(公告)号：WO2006026180A3
公开(公告)日：2006-08-03
申请号：PCT/US2005029454
申请日：2005-08-18
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
发明人： EROKHIN YURI , JEONG UKYO , SCHEUER JAY T , WALTHER STEVEN R
IPC分类号： H01L21/225 , H01L21/265 , H01L21/336 , H01L29/78
CPC分类号： H01L21/2236 , H01L29/66575
摘要： A method for fabricating a semiconductor-based device includes providing a doped semiconductor substrate, introducing a second dopant into the substrate to define a pn junction, and introducing a neutralizing species into the substrate in the neighborhood of the pn junction to reduce a capacitance associated with the pn junction. A semiconductor-based device includes a semiconductor substrate having first and second dopants, and a neutralizing species. The first and second dopants define a pn junction, and the neutralizing species neutralizes a portion of the first dopant in the neighborhood of the pn junction to decrease a capacitance associated with the pn junction.
摘要翻译：一种用于制造基于半导体的器件的方法包括提供掺杂的半导体衬底，将第二掺杂剂引入到衬底中以限定pn结，并将中和物质引入到pn结附近的衬底中，以减少与 pn结。基于半导体的器件包括具有第一和第二掺杂剂的半导体衬底和中和物质。第一和第二掺杂剂限定pn结，并且中和物质中和pn结附近的第一掺杂剂的一部分以减少与pn结相关联的电容。

7. 发明申请

WO2011017618A1 COLD IMPLANT FOR OPTIMIZED SILICIDE FORMATION 审中-公开
标题翻译：用于优化硅化物形成的冷浸
公开(公告)号：WO2011017618A1
公开(公告)日：2011-02-10
申请号：PCT/US2010/044716
申请日：2010-08-06
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , HATEM, Christopher, R. , COLOMBEAU, Benjamin , THANIGAIVELAN, Thirumal , SHIM, Kyu-ha , SCHEUER, Jay, T.
发明人： HATEM, Christopher, R. , COLOMBEAU, Benjamin , THANIGAIVELAN, Thirumal , SHIM, Kyu-ha , SCHEUER, Jay, T.
IPC分类号： H01J37/20 , H01J37/317 , H01L21/28 , H01L21/8238 , H01L21/265
CPC分类号： H01J37/20 , H01J37/3171 , H01J2237/2001 , H01J2237/31701 , H01L21/26506 , H01L21/26513 , H01L21/2658 , H01L21/26593 , H01L21/28518 , H01L21/823814
摘要： A method of applying a suicide to a substrate while minimizing adverse effects, such as lateral diffusion of metal or "piping" is disclosed. The Implantation of the source and drain regions of a semiconductor device are performed at cold temperatures, such as below 0°C. This cold implant reduces the structural damage caused by the impacting ions. Subsequently, a suicide layer is applied, and due to the reduced structural damage, metal diffusion and piping into the substrate is lessened. In some embodiments, an amorphization implant is performed after the implantation of dopants, but prior to the application of the sificide, By performing this pre-siiicide implant at cold temperatures, similar results can be obtained.
摘要翻译：公开了一种将底物施用于底物同时使不利影响最小化的方法，例如金属或“管道”的横向扩散。半导体器件的源区和漏区的植入在低于0℃的低温下进行。这种冷植入物减少了受冲击离子造成的结构损伤。随后，施加了硅化物层，并且由于结构损伤的减小，金属扩散和管道进入衬底被减少。在一些实施方案中，在植入掺杂剂之后，但在施加微孔之前，进行非晶化注入。通过在寒冷的温度下进行该预硅化物移植，可获得类似的结果。

8. 发明申请

WO2010120569A2 CONJUGATED ICP AND ECR PLASMA SOURCES FOR WIDE RIBBON ION BEAM GENERATION AND CONTROL 审中-公开
标题翻译：连接ICP和ECR等离子体源用于大量离子束生成和控制
公开(公告)号：WO2010120569A2
公开(公告)日：2010-10-21
申请号：PCT/US2010029583
申请日：2010-04-01
申请人： VARIAN SEMICONDUCTOR EQUIPMENT , BILOIU COSTEL , SCHEUER JAY T , PEREL ALEXANDER S
发明人： BILOIU COSTEL , SCHEUER JAY T , PEREL ALEXANDER S
IPC分类号： H01L21/265 , H05H1/24 , H05H1/34
CPC分类号： H01J37/08 , H01J37/3171 , H01J2237/061 , H01J2237/065 , H01J2237/0815 , H01L31/0288 , H01L31/1804 , H01L31/206 , Y02P70/521
摘要： An ion source, capable of generating high-density wide ribbon ion beam, utilizing one or more plasma sources is disclosed. In addition to the plasma source(s), the ion source also includes a diffusion chamber. The diffusion chamber has an extraction aperture oriented along the same axis as the dielectric cylinder of the plasma source. In one embodiment, dual plasma sources, located on opposing ends of the diffusion chamber are used to create a more uniform extracted ion beam. In a further embodiment, a multicusp magnetic field is used to further improve the uniformity of the extracted ion beam.
摘要翻译：公开了一种利用一个或多个等离子体源产生高密度宽带状离子束的离子源。除了等离子体源之外，离子源还包括扩散室。扩散室具有沿着与等离子体源的介质柱体相同的轴线定向的提取孔。在一个实施例中，位于扩散室的相对端上的双等离子体源用于产生更均匀的提取离子束。在另一实施例中，使用多脉冲磁场来进一步提高所提取的离子束的均匀性。

9. 发明申请

WO2010075283A2 METHOD AND APPARATUS FOR PLASMA DOSE MEASUREMENT 审中-公开
标题翻译：用于等离子体剂量测量的方法和装置
公开(公告)号：WO2010075283A2
公开(公告)日：2010-07-01
申请号：PCT/US2009/068996
申请日：2009-12-21
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES , DZENGELESKI, Joseph, P. , MILLER, Timothy, J. , SCHEUER, Jay, T. , LEAVITT, Christopher, J.
发明人： DZENGELESKI, Joseph, P. , MILLER, Timothy, J. , SCHEUER, Jay, T. , LEAVITT, Christopher, J.
IPC分类号： H01L21/66 , H01L21/265
CPC分类号： G01T1/00
摘要： An non-Faraday ion dose measurement device is positioned within a plasma process chamber and includes a sensor located above a workpiece within the chamber. The sensor is configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma implantation process. The sensor outputs a current signal proportional to the detected secondary electrons. A current circuit subtracts the detected secondary current generated from the sensor and subtracts it from a bias current supplied to the workpiece within the chamber. The difference between the currents provides a measurement of the ion dose current calculated in situ and during the implantation process.
摘要翻译：非法拉第离子剂量测量装置位于等离子体处理室内，并且包括位于室内的工件上方的传感器。传感器被配置为检测从暴露于等离子体注入工艺的工件的表面发射的二次电子的数量。传感器输出与检测到的二次电子成比例的电流信号。当前电路减去从传感器产生的检测到的次级电流，并从提供给腔室内的工件的偏置电流中减去它。电流之间的差异提供了在原位和植入过程中计算的离子剂量电流的测量。

10. 发明申请

WO2008083023A1 METHOD AND APPARATUSES FOR PROVIDING ELECTRICAL CONTACT FOR PLASMA PROCESSING APPLICATIONS 审中-公开
标题翻译：用于提供等离子体处理应用的电气接触的方法和装置
公开(公告)号：WO2008083023A1
公开(公告)日：2008-07-10
申请号：PCT/US2007/088291
申请日：2007-12-20
申请人： VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. , KOO, Bon-woong , WALTHER, Steven, R. , LEAVITT, Christopher, J. , TOCCO, Justin , HYUN, Sung-Hwan , MILLER, Timothy, J. , SCHEUER, Jay, T. , GUPTA, Atul , SINGH, Vikram , RAJ, Deven
发明人： KOO, Bon-woong , WALTHER, Steven, R. , LEAVITT, Christopher, J. , TOCCO, Justin , HYUN, Sung-Hwan , MILLER, Timothy, J. , SCHEUER, Jay, T. , GUPTA, Atul , SINGH, Vikram , RAJ, Deven
IPC分类号： H01J37/32 , H01L21/00
CPC分类号： H01J37/32706 , H01J37/32623 , H01L21/67011 , H01L21/67069 , H01L21/68714 , H01L21/68735
摘要： A method and apparatuses for providing improved electrical contact to a semiconductor wafer during plasma processing applications are disclosed. In one embodiment, an apparatus (100) includes a wafer platen (106) for supporting the wafer; and a plurality of electrical contact elements (120), each of the plurality of electrical contact elements (1'2O) are configured to provide a path for supplying a bias voltage from a bias power supply to the wafer (102) on the wafer platen (106). The plurality of electrical contact elements (120) are also geometrically arranged such that at least one electrical contact element contacts an inner surface region (114) (e.g., region between a center of wafer and a distance approximately half of the radius of the wafer) and at least one electrical contact element contacts an outer annular surface region (116) (e.g., region between an outer edge of wafer and a distance approximately half of the radius of the wafer).
摘要翻译：公开了一种用于在等离子体处理应用期间提供与半导体晶片的改进的电接触的方法和装置。在一个实施例中，装置（100）包括用于支撑晶片的晶圆台（106）和多个电接触元件（120），所述多个电接触元件（1'20）中的每一个被配置为提供用于将来自偏置电源的偏置电压提供给晶片台板上的晶片（102）的路径（106）。多个电接触元件（120）也几何地布置成使得至少一个电接触元件接触内表面区域（114）（例如，晶片中心与晶片半径的一半的距离）并且至少一个电接触元件接触外部环形表面区域（116）（例如，晶片的外边缘与晶片的半径的一半的距离之间的区域）。

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