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1. 发明申请

WO2011055126A2 A PHOTON DETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：WO2011055126A2
公开(公告)日：2011-05-12
申请号：PCT/GB2010/002049
申请日：2010-11-08
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA RESEARCH EUROPE LIMITED , THOMAS, Oliver, Edward , SHIELDS, Andrew, James , YUAN, Zhiliang
发明人： THOMAS, Oliver, Edward , SHIELDS, Andrew, James , YUAN, Zhiliang
IPC分类号： G01J1/42
CPC分类号： G01J1/44
摘要： A photon detection system comprising an avalanche photodiode and a voltage source for said avalanche photodiode, wherein said avalanche photodiode comprises Silicon or its heterostructures and wherein said voltage source is configured to bias said avalanche photodiode with a voltage component which is static with respect to time and a voltage component which varies with time.
摘要翻译：一种包括雪崩光电二极管和用于所述雪崩光电二极管的电压源的光子检测系统，其中所述雪崩光电二极管包括硅或其异质结构，并且其中所述电压源被配置为以相对于时间静态的电压分量来偏置所述雪崩光电二极管，随时间变化的电压分量。

2. 发明申请

WO2011055119A2 TUNEABLE QUANTUM LIGHT SOURCE 审中-公开
标题翻译：可调量子光源
公开(公告)号：WO2011055119A2
公开(公告)日：2011-05-12
申请号：PCT/GB2010/002038
申请日：2010-11-05
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA RESEARCH EUROPE LIMITED , BENNET, Anthony, John , WARD, Martin, Brian , SHIELDS, Andrew, James
发明人： BENNET, Anthony, John , WARD, Martin, Brian , SHIELDS, Andrew, James
IPC分类号： H01L33/06
CPC分类号： H01L33/06 , B82Y20/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01S5/3412 , H01S5/3416
摘要： A photon source comprising a semiconductor heterostructure, said semiconductor heterostructure comprising a quantum well, a barrier region adjacent said quantum well and a quantum dot provided in said quantum well, the photon source further comprising electrical contacts and a power supply coupled to first and second electrical contacts configured to apply a tuneable electric field across said quantum dot to control the emission energy of said quantum dot, said electric field being tuneable across an operating range an wherein the tunnelling time of carriers from said quantum dot to said first electrical contact and the tunnelling time of carriers from said quantum dot to said second electrical contact are greater than the radiative decay time of an exciton in said quantum dot over said operating range for controlling the emission energy, said photon source being configured such that emission from a single quantum dot exits said photon source.
摘要翻译：一种包括半导体异质结构的光子源，所述半导体异质结构包括量子阱，与所述量子阱相邻的势垒区和设置在所述量子阱中的量子点，所述光子源还包括电接触和耦合到第一和第二电触点，被配置为在所述量子点上施加可调电场以控制所述量子点的发射能量，所述电场可在整个工作范围内调节，其中载流子从所述量子点到所述第一电触点的隧穿时间和隧穿从所述量子点到所述第二电接触的载流子的时间大于在所述操作范围上的所述量子点中的激子的辐射衰减时间，用于控制发射能量，所述光子源被配置为使得来自单个量子点的发射退出说光子源。

3. 发明申请

WO2008142389A1 AN OPTICAL SYSTEM FOR CREATING INTERFERENCE BETWEEN PHOTONS 审中-公开
标题翻译：用于创建光子之间的干涉的光学系统
公开(公告)号：WO2008142389A1
公开(公告)日：2008-11-27
申请号：PCT/GB2008/001704
申请日：2008-05-16
申请人： KABUSHIKI KAISHA TOSHIBA , BENNETT, Anthony, John , STEVENSON, Richard, Mark , SHIELDS, Andrew, James
发明人： BENNETT, Anthony, John , STEVENSON, Richard, Mark , SHIELDS, Andrew, James
IPC分类号： H04B10/30 , H04L9/08 , G01C19/72
CPC分类号： G01C19/72 , H04B10/548 , H04L9/0858
摘要： An optical system for creating interference between photons, comprising a photon source, first directing elements configured to direct photons to follow a first path through said optical system, second directing elements configured to direct photons to follow a second path through said optical system wherein said second path is the reverse of said first path, the system being configured such that photons travelling through the first path have a different polarisation to those travelling through the second- path and a -means of varying the relative phase shift between photons following the first path and photons following the second path. Suitable for quantum cryptography, quantum imaging or investigation of an object, quantum interferometry, multi-photon detectors or fibre optic gyroscopes.
摘要翻译：一种用于在光子之间产生干涉的光学系统，包括光子源，第一引导元件，其被配置为引导光子跟随穿过所述光学系统的第一路径;第二引导元件，被配置为引导光子跟随通过所述光学系统的第二路径，其中所述第二路径与所述第一路径相反，所述系统被配置为使得穿过第一路径的光子具有与通过第二路径行进的那些不同的偏振，以及改变跟随第一路径的光子之间的相对相移的方式，以及光子遵循第二条路径。适用于量子加密，量子成像或物体研究，量子干涉测量，多光子检测器或光纤陀螺仪。

4. 发明申请

WO2008104799A1 A PHOTON DETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：WO2008104799A1
公开(公告)日：2008-09-04
申请号：PCT/GB2008/000722
申请日：2008-02-29
申请人： KABUSHIKI KAISHA TOSHIBA , YUAN, Zhiliang , SHIELDS, Andrew, James
发明人： YUAN, Zhiliang , SHIELDS, Andrew, James
IPC分类号： G01J1/44 , H04L9/08 , H01L31/101
CPC分类号： G01J1/44 , G01J2001/442 , G01J2001/4466 , H04B10/697
摘要： A photon detection system comprising a photon detector configured to detect single photons, a signal divider to divide the output signal of the photon detector into a first part and a second part, where the first part is substantially identical to the second part, delay means for delaying the second part with respect to the first part and a combiner for combining the first and delayed second parts of the signal such that the delayed second part is used to cancel periodic variations in the first part of the output signal.
摘要翻译：一种光子检测系统，包括被配置为检测单个光子的光子检测器，信号分配器，用于将光子检测器的输出信号划分成第一部分和第二部分，其中第一部分基本上与第二部分相同;延迟装置，相对于第一部分延迟第二部分，以及组合器，用于组合信号的第一和第二部分，使得延迟的第二部分用于消除输出信号的第一部分中的周期性变化。

5. 发明申请

WO2008104761A2 A PHOTON DETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：WO2008104761A2
公开(公告)日：2008-09-04
申请号：PCT/GB2008/000646
申请日：2008-02-27
申请人： KABUSHIKI KAISHA TOSHIBA , KARDYNAL, Beata, Ewa , SHIELDS, Andrew, James
发明人： KARDYNAL, Beata, Ewa , SHIELDS, Andrew, James
IPC分类号： H01L31/0352 , H01L31/112 , H01L29/778
CPC分类号： H01L31/0352 , H01L31/0304 , H01L31/102 , Y02E10/544
摘要： A photon detector comprising a plurality of quantum dots, a sensing region and measurement means for measuring an electrical characteristic of the sensing region, said sensing region being located such that a change in the charged state of said quantum dots causes a change in the electrical characteristics of said sensing region, the detector further comprising photon counting means for determining the number of photons detected in a pulse of radiation from changes in the electrical characterisitcs of the sensing region.
摘要翻译：包括多个量子点的光子检测器，感测区域和用于测量感测区域的电特性的测量装置，所述感测区域被定位成使得所述量子点的充电状态的变化导致电特性的变化所述检测器还包括光子计数装置，用于根据感测区域的电特性的变化来确定在辐射脉冲中检测到的光子的数量。

6. 发明申请

WO2012063027A3 PHOTON NUMBER RESOLVING DETECTOR 审中-公开
公开(公告)号：WO2012063027A3
公开(公告)日：2013-01-03
申请号：PCT/GB2011001595
申请日：2011-11-11
申请人： TOSHIBA KK , TOSHIBA RES EUROP LTD , THOMAS OLIVER EDWARD , YUAN ZHILIANG , SHIELDS ANDREW JAMES
发明人： THOMAS OLIVER EDWARD , YUAN ZHILIANG , SHIELDS ANDREW JAMES
IPC分类号： H01L31/107 , H01L27/144 , H01L31/02
CPC分类号： H01L31/107 , G01J1/46 , H01L27/1446 , H01L31/02027
摘要： A photon detection system for photon counting comprising an avalanche photo-diode, said avalanche photodiode comprising a p- n junction formed from a first semiconductor layer (103) having a first conductivity type and a second semiconductor layer (107) hav¬ ing a second conductivity type, wherein the first conductivity type is one selected from n-type or p-type and the second conductivity type is different to the first conductivity type and is selected from n- type or p-type, wherein the first semiconductor layer (103) is a doped layer which is doped with dopants of a first conductivity type and where there is a variation in the concentration of dopants of the first conductivity type such that the first layer comprises islands (105) of high field zones surrounded by low field zones, the high and low field zones distributed along the plane of the p-n junction, wherein the dopant concentration is higher in the high field zones than the low field zones, said system further comprising a biasing unit, said biasing unit being configured to apply a voltage which is static in time and a time varying voltage for operating the avalanche photo-diode in gated mode.
摘要翻译：一种用于光子计数的光子检测系统，包括雪崩光电二极管，所述雪崩光电二极管包括由具有第一导电类型的第一半导体层（103）和具有第二导电类型的第二半导体层（107）形成的p-n结，导电类型，其中所述第一导电类型是从n型或p型选择的一种，并且所述第二导电类型不同于所述第一导电类型，并且选自n型或p型，其中所述第一半导体层（103 ）是掺杂有第一导电类型的掺杂剂并且其中第一导电类型的掺杂剂的浓度变化的掺杂层，使得第一层包括由低场区域包围的高场区域的岛（105），所述高低场区域沿着所述pn结的平面分布，其中所述高场区域中的所述掺杂剂浓度高于所述低场区域，所述系统还包括：偏置单元，所述偏置单元被配置为施加在时间上是静态的电压和用于在门控模式下操作雪崩光电二极管的时变电压。

7. 发明申请

WO2011055120A1 A PHOTON SOURCE FOR PRODUCING ENTANGLED PHOTONS 审中-公开
标题翻译：用于生产照明光子的光电源
公开(公告)号：WO2011055120A1
公开(公告)日：2011-05-12
申请号：PCT/GB2010/002039
申请日：2010-11-05
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA RESEARCH EUROPE LIMITED , STEVENSON, Richard, Mark , SHIELDS, Andrew, James
发明人： STEVENSON, Richard, Mark , SHIELDS, Andrew, James
IPC分类号： H01L33/00 , H01L33/06 , H01L33/10 , H01L33/20 , H01L33/08 , H01S5/34
CPC分类号： H01L33/06 , B82Y10/00 , B82Y20/00 , B82Y30/00 , H01L33/0012 , H01L33/08 , H01L33/105 , H01L33/20
摘要： A photon source comprising: a quantum dot (519); electrical contacts (533, 537) configured to apply an electric field across said quantum dot (519) : and an electrical source coupled to said contacts (533, 537), said electrical source being configured to apply a potential such that carriers are supplied to said quantum dot (519) to form a bi-exciton or higher order exciton, wherein said photon source further comprises a barrier (521) configured to increase the time which a carrier takes to tunnel to and from said quantum dot (519) to be greater than the radiative lifetime of an exciton in the quantum dot (519), the quantum dot (519) being suitable for emission of entangled photons during decay of a bi-exciton or higher order exciton.
摘要翻译：一种光子源，包括：量子点（519）; 被配置为跨越所述量子点（519）施加电场的电触头（533,537）;以及耦合到所述触点（533,537）的电源，所述电源被配置为施加电位，使得载体被供应到所述量子点（519）以形成双激子或更高阶的激子，其中所述光子源还包括阻挡层（521），其被配置为增加载体从所述量子点（519）通过隧道到所述量子点（519）的时间大于量子点（519）中激子的辐射寿命，量子点（519）适合于在双激子或更高阶激子的衰变过程中发出纠缠光子。

8. 发明申请

WO2008104761A3 PHOTON DETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：WO2008104761A3
公开(公告)日：2009-01-15
申请号：PCT/GB2008000646
申请日：2008-02-27
申请人： TOSHIBA KK , KARDYNAL BEATA EWA , SHIELDS ANDREW JAMES
发明人： KARDYNAL BEATA EWA , SHIELDS ANDREW JAMES
IPC分类号： H01L31/0304 , H01L31/0352 , H01L31/102
CPC分类号： H01L31/0352 , H01L31/0304 , H01L31/102 , Y02E10/544
摘要： A photon detector comprising a plurality of quantum dots, a sensing region and measurement means for measuring an electrical characteristic of the sensing region, said sensing region being located such that a change in the charged state of said quantum dots causes a change in the electrical characteristics of said sensing region, the detector further comprising photon counting means for determining the number of photons detected in a pulse of radiation from changes in the electrical characteristics of the sensing region.
摘要翻译：包括多个量子点的光子检测器，感测区域和用于测量感测区域的电特性的测量装置，所述感测区域被定位成使得所述量子点的充电状态的变化导致电特性的变化所述检测器还包括光子计数装置，用于根据感测区域的电特性的变化来确定在辐射脉冲中检测的光子的数量。

9. 发明申请

WO2009084744A2 PHOTON DETECTION SYSTEM AND METHOD OF PHOTON DETECTION 审中-公开
标题翻译：光子检测系统和光子检测方法
公开(公告)号：WO2009084744A2
公开(公告)日：2009-07-09
申请号：PCT/JP2009050164
申请日：2009-01-05
申请人： TOSHIBA KK , KARDYNAL BEATA EWA , YUAN ZHILIANG , SHIELDS ANDREW JAMES
发明人： KARDYNAL BEATA EWA , YUAN ZHILIANG , SHIELDS ANDREW JAMES
IPC分类号： G01J1/44
CPC分类号： H01L31/107 , G01J1/44
摘要： A photon detection system configured to determine the number of detected photons, the detection system comprising an avalanche photodiode, means to apply a bias across the photodiode such that upon illumination the signal due to the avalanche is less than the saturation value of the system and means to measure the size of the avalanche signal.
摘要翻译：一种被配置为确定检测到的光子的数量的光子检测系统，该检测系统包括雪崩光电二极管，用于跨光电二极管施加偏置的装置，使得在照明时，由于雪崩引起的信号小于系统的饱和值，测量雪崩信号的大小。

10. 发明申请

WO2012063027A2 PHOTON DETECTOR 审中-公开
标题翻译：光电探测器
公开(公告)号：WO2012063027A2
公开(公告)日：2012-05-18
申请号：PCT/GB2011/001595
申请日：2011-11-11
申请人： KABUSHIKI KAISHA TOSHIBA , TOSHIBA RESEARCH EUROPE LIMITED , THOMAS, Oliver, Edward , YUAN, Zhiliang , SHIELDS, Andrew, James
发明人： THOMAS, Oliver, Edward , YUAN, Zhiliang , SHIELDS, Andrew, James
CPC分类号： H01L31/107 , G01J1/46 , H01L27/1446 , H01L31/02027
摘要： A photon detection system comprising an avalanche photo-diode, said avalanche photodiode comprising a p-n junction formed from a first semiconductor layer having a first conductivity type and a second semiconductor layer having a second conductivity type, wherein the first conductivity type is one selected from n-type or p-type and the second conductivity type is different to the first conductivity type and is selected from n- type or p-type, wherein the first semiconductor layer is a doped layer which is doped with dopants of a first conductivity type and where there is a variation in the concentration of dopants of the first conductivity type such that the first layer comprises islands of high field zones surrounded by low field zones, the high and low field zones distributed laterally in the plane of the p-n junction, wherein the dopant concentration is higher in the high field zones than the low field zones, said system further comprising a biasing unit, said biasing unit being configured to apply a voltage which is static in time and a time varying voltage.
摘要翻译：一种包括雪崩光电二极管的光子检测系统，所述雪崩光电二极管包括由具有第一导电类型的第一半导体层和具有第二导电类型的第二半导体层形成的pn结，其中所述第一导电类型是从n 型或p型，第二导电类型与第一导电类型不同，并且选自n型或p型，其中第一半导体层是掺杂有第一导电类型的掺杂剂的掺杂层，其中第一导电类型的掺杂剂的浓度存在变化，使得第一层包括被低场区包围的高场区的岛，高场和低场区横向分布在pn结的平面中，其中，高场区域中的掺杂剂浓度高于低场区域，所述系统还包括偏压单元，所述偏压单元为配合孔应用时间和时间变化的电压施加电压。

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