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1. 发明申请

US20050287787A1 Porous ceramic materials as low-k films in semiconductor devices 审中-公开
标题翻译：多孔陶瓷材料作为半导体器件中的低k膜
公开(公告)号：US20050287787A1
公开(公告)日：2005-12-29
申请号：US10880632
申请日：2004-06-29
申请人： Grant Kloster , Jihperng Leu , Michael Goodner , Michael Haverty , Sadasivan Shankar
发明人： Grant Kloster , Jihperng Leu , Michael Goodner , Michael Haverty , Sadasivan Shankar
IPC分类号： H01L21/316 , H01L21/768 , H01L21/4763 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/02178 , H01L21/02203 , H01L21/02274 , H01L21/02362 , H01L21/31695 , H01L21/76807 , H01L21/7682 , H01L2221/1047
摘要： A method for selecting and forming a low-k, relatively high E porous ceramic film in a semiconductor device is described. A ceramic material is selected having a relatively high Young's modulus and relatively lower dielectric constant. The k is reduced by making the film porous.
摘要翻译：描述了在半导体器件中选择和形成低k，较高E多孔陶瓷膜的方法。选择具有相对高的杨氏模量和相对较低的介电常数的陶瓷材料。通过使膜多孔化来减小k。

2. 发明授权

US06887131B2 Polishing pad design 失效
标题翻译：抛光垫设计
公开(公告)号：US06887131B2
公开(公告)日：2005-05-03
申请号：US10228094
申请日：2002-08-27
申请人： Lei Jiang , Sadasivan Shankar , Paul Fischer
发明人： Lei Jiang , Sadasivan Shankar , Paul Fischer
IPC分类号： B24B37/26 , B24D13/14 , B24D18/00 , B24B9/00
CPC分类号： B24B37/26 , B24D18/00
摘要： A method is provided for creating a polish pad. This may involve determining a design layout of a wafer. The design layout may include a distribution of metal line features on the wafer. A polish pad design may be created/determined based on the determined layer. The polish pad may have asperities having a width greater than a width of metal line features of the wafer.
摘要翻译：提供了一种用于创建抛光垫的方法。这可能涉及确定晶片的设计布局。设计布局可以包括晶片上的金属线特征的分布。可以基于确定的层创建/确定抛光垫设计。抛光垫可以具有宽度大于晶片的金属线特征的宽度的粗糙度。

3. 发明申请

US20050054143A1 Using benzocyclobutene based polymers as underfill materials 审中-公开
标题翻译：使用基于苯并环丁烯的聚合物作为底部填充材料
公开(公告)号：US20050054143A1
公开(公告)日：2005-03-10
申请号：US10939226
申请日：2004-09-10
申请人： Sergei Skokov , Lei Jiang , Sadasivan Shankar
发明人： Sergei Skokov , Lei Jiang , Sadasivan Shankar
IPC分类号： C08G61/02 , H01L21/56 , H01L23/29 , H01L21/44 , H01L21/48 , H01L21/50 , H01L23/02
CPC分类号： H01L21/563 , C08G61/02 , H01L23/293 , H01L2224/05568 , H01L2224/16225 , H01L2224/32225 , H01L2224/73203 , H01L2224/73204 , H01L2924/00014 , H01L2924/15311 , H01L2924/00 , H01L2224/05599
摘要： A cyclotene chemical structure may be modified to reduce its curing temperature. With the reduced curing temperature, the material may be highly advantageous as an underfill material for surface nonpackaging.
摘要翻译：旋光化学结构可以被修饰以降低其固化温度。随着固化温度的降低，该材料作为表面非包装的底部填充材料可能是非常有利的。

4. 发明申请

US20120161321A1 SEMICONDUCTOR DEVICE CONTACTS 有权
标题翻译：半导体器件联系人
公开(公告)号：US20120161321A1
公开(公告)日：2012-06-28
申请号：US12978359
申请日：2010-12-23
申请人： Michael G. Haverty , Sadasivan Shankar , Tahir Ghani , Seongjun Park
发明人： Michael G. Haverty , Sadasivan Shankar , Tahir Ghani , Seongjun Park
IPC分类号： H01L23/482 , H01L21/3205 , H01L21/283 , B82Y40/00 , B82Y99/00
CPC分类号： H01L29/41791 , H01L21/283 , H01L21/3205 , H01L23/482 , H01L23/485 , H01L29/0895 , H01L29/456 , H01L29/7851 , H01L2924/0002 , H01L2924/00
摘要： Techniques are disclosed for forming contacts in silicon semiconductor devices. In some embodiments, a transition layer forms a non-reactive interface with the silicon semiconductor contact surface. In some such cases, a conductive material provides the contacts and the material forming a non-reactive interface with the silicon surface. In other cases, a thin semiconducting or insulting layer provides the non-reactive interface with the silicon surface and is coupled to conductive material of the contacts. The techniques can be embodied, for instance, in planar or non-planar (e.g., double-gate and tri-gate FinFETs) transistor devices.
摘要翻译：公开了用于在硅半导体器件中形成接触的技术。在一些实施例中，过渡层与硅半导体接触表面形成非反应性界面。在一些这种情况下，导电材料提供触点和与硅表面形成非反应性界面的材料。在其他情况下，薄的半导体或绝缘层提供与硅表面的非反应性界面并且耦合到触点的导电材料。这些技术可以例如在平面或非平面（例如，双栅极和三栅极FinFET））晶体管器件中实现。

5. 发明授权

US08154121B2 Polymer interlayer dielectric and passivation materials for a microelectronic device 有权
标题翻译：用于微电子器件的聚合物层间电介质和钝化材料
公开(公告)号：US08154121B2
公开(公告)日：2012-04-10
申请号：US12037625
申请日：2008-02-26
申请人： Kunal Shah , Michael Haverty , Sadasivan Shankar , Doug Ingerly , Grant Kloster
发明人： Kunal Shah , Michael Haverty , Sadasivan Shankar , Doug Ingerly , Grant Kloster
IPC分类号： H01L23/48
CPC分类号： H01L21/312 , H01L21/02118 , H01L23/5329 , H01L2924/0002 , H01L2924/00
摘要： Polymer interlayer dielectric and passivation materials for a microelectronic device are generally described. In one example, an apparatus includes one or more interconnect structures of a microelectronic device and one or more polymeric dielectric layers coupled with the one or more interconnect structures, the polymeric dielectric layers including copolymer backbones having a first monomeric unit and a second monomeric unit wherein the first monomeric unit has a different chemical structure than the second monomeric unit and wherein the copolymer backbones are cross-linked by a first cross-linker or a second cross-linker, or combinations thereof.
摘要翻译：通常描述用于微电子器件的聚合物层间电介质和钝化材料。在一个示例中，装置包括微电子器件的一个或多个互连结构以及与一个或多个互连结构耦合的一个或多个聚合物电介质层，所述聚合物电介质层包括具有第一单体单元和第二单体单元的共聚物主链，其中第一单体单元具有与第二单体单元不同的化学结构，并且其中共聚物主链通过第一交联剂或第二交联剂或其组合交联。

6. 发明申请

US20070224834A1 Dielectric material having carborane derivatives 审中-公开
标题翻译：具有碳硼烷衍生物的介电材料
公开(公告)号：US20070224834A1
公开(公告)日：2007-09-27
申请号：US11582720
申请日：2006-10-17
申请人： Michael Haverty , Tim Chen , Sadasivan Shankar
发明人： Michael Haverty , Tim Chen , Sadasivan Shankar
IPC分类号： H01L21/31
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/314 , H01L21/31695 , H01L2221/1047
摘要： Numerous embodiments of an apparatus and method of a dielectric material having a low dielectric constant and good mechanical strength are described. In one embodiment a dielectric material having multiple porous regions is disposed over a substrate. A caged structure is bridged within the plurality of pores. In one particular embodiment, the caged structure may be carborane or a carborane derivative.
摘要翻译：描述具有低介电常数和良好机械强度的介电材料的装置和方法的许多实施例。在一个实施例中，具有多个多孔区域的电介质材料设置在衬底上。笼形结构桥接在多个孔内。在一个具体实施方案中，笼状结构可以是碳硼烷或碳硼烷衍生物。

7. 发明申请

US20140209855A1 NANOWIRE STRUCTURES HAVING WRAP-AROUND CONTACTS 审中-公开
标题翻译：具有缠绕接头的纳米结构
公开(公告)号：US20140209855A1
公开(公告)日：2014-07-31
申请号：US13995914
申请日：2011-12-23
申请人： Stephen M. Cea , Cory E. Weber , Patrick H. Keys , Seiyon Kim , Michael G. Haverty , Sadasivan Shankar
发明人： Stephen M. Cea , Cory E. Weber , Patrick H. Keys , Seiyon Kim , Michael G. Haverty , Sadasivan Shankar
IPC分类号： H01L29/775 , H01L29/66
摘要： Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.
摘要翻译：描述具有环绕触点的纳米线结构。例如，纳米线半导体器件包括设置在衬底之上的纳米线。沟道区域设置在纳米线中。通道区域具有与长度正交的长度和周长。栅电极堆叠围绕通道区域的整个周边。一对源极和漏极区域设置在沟道区域的任一侧上的纳米线中。源极和漏极区域中的每一个具有与沟道区域的长度正交的周长。第一接触件完全围绕源区域的周边。第二触点完全围绕漏区的周边。

8. 发明申请

US20090001591A1 REDUCING RESISTIVITY IN METAL INTERCONNECTS BY COMPRESSIVE STRAINING 审中-公开
标题翻译：通过压缩应变降低金属互连中的电阻率
公开(公告)号：US20090001591A1
公开(公告)日：2009-01-01
申请号：US11771476
申请日：2007-06-29
申请人： Michael Haverty , Sadasivan Shankar , Kevin O'Brien , Seongjun Park
发明人： Michael Haverty , Sadasivan Shankar , Kevin O'Brien , Seongjun Park
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L23/485 , H01L21/76801 , H01L21/76843 , H01L21/76849 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Techniques for reducing resistivity in metal interconnects by compressive straining are generally described. In one example, an apparatus includes a dielectric substrate, a thin film of metal coupled with the dielectric substrate, and an interconnect metal coupled to the thin film of metal, the thin film of metal having a lattice parameter that is smaller than the lattice parameter of the interconnect metal to compressively strain the interconnect metal.
摘要翻译：通常描述通过压缩应变来降低金属互连中的电阻率的技术。在一个示例中，设备包括电介质基板，与电介质基板耦合的金属薄膜和耦合到金属薄膜的互连金属，金属薄膜具有小于晶格参数的晶格参数的互连金属，以压缩互连金属。

9. 发明申请

US20060071300A1 Dielectric material having carborane derivatives 审中-公开
标题翻译：具有碳硼烷衍生物的介电材料
公开(公告)号：US20060071300A1
公开(公告)日：2006-04-06
申请号：US10957231
申请日：2004-09-30
申请人： Michael Haverty , Tim Chen , Sadasivan Shankar
发明人： Michael Haverty , Tim Chen , Sadasivan Shankar
IPC分类号： H01L23/58
CPC分类号： H01L21/7682 , H01L21/02126 , H01L21/02203 , H01L21/02274 , H01L21/02304 , H01L21/314 , H01L21/31695 , H01L2221/1047
摘要： Numerous embodiments of an apparatus and method of a dielectric material having a low dielectric constant and good mechanical strength are described. In one embodiment a dielectric material having multiple porous regions is disposed over a substrate. A caged structure is bridged within the plurality of pores. In one particular embodiment, the caged structure may be carborane or a carborane derivative.
摘要翻译：描述具有低介电常数和良好机械强度的介电材料的装置和方法的许多实施例。在一个实施例中，具有多个多孔区域的电介质材料设置在衬底上。笼形结构桥接在多个孔内。在一个具体实施方案中，笼状结构可以是碳硼烷或碳硼烷衍生物。

10. 发明授权

US07021999B2 Rinse apparatus and method for wafer polisher 失效
标题翻译：晶圆抛光机的冲洗装置及方法
公开(公告)号：US07021999B2
公开(公告)日：2006-04-04
申请号：US11099926
申请日：2005-04-05
申请人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
发明人： Lei Jiang , Jin Liu , Sadasivan Shankar , Thomas Bramblett
IPC分类号： B24B1/00
CPC分类号： B24B53/017
摘要： An apparatus for polishing a wafer comprising a rotatable polishing pad having a center of rotation and a rinse delivery conduit positioned adjacent to the polishing pad and substantially in radial alignment with the center. The rinse delivery conduit includes a plurality of nozzles to dispense a rinsing liquid. In one embodiment, the plurality of nozzles are configured and positioned to generate a higher flow rate of the rinsing liquid at the end of the rinse delivery conduit proximate to the center than at the end of the rinse delivery conduit distal to the center. In another embodiment, the rinse delivery conduit has a proximal end which is substantially adjacent the center and the distal end which is approximately adjacent an outer periphery of the pad.
摘要翻译：一种用于抛光晶片的装置，包括具有旋转中心的可旋转抛光垫和邻近抛光垫定位并基本上与中心径向对准的冲洗输送导管。冲洗输送导管包括多个喷嘴以分配冲洗液体。在一个实施例中，多个喷嘴被配置和定位成在漂洗输送导管的末端靠近中心产生较高流量的漂洗液体，而不是在远离中心的漂洗输送导管末端。在另一个实施例中，冲洗输送导管具有基本上邻近中心的近端和与垫的外周近似近似的远端。

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