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1. 发明申请

US20220149802A1 HIGH PURITY PIEZOELECTRIC THIN FILM AND METHOD OF MANUFACTURING ELEMENT USING SAME THIN FILM 有权
公开(公告)号：US20220149802A1
公开(公告)日：2022-05-12
申请号：US17434823
申请日：2020-02-28
申请人： Sang Jeong AN
发明人： Sang Jeong AN
IPC分类号： H03H3/02 , H01L41/08 , H01L41/187 , H01L41/316 , H01L41/319 , C30B29/40 , C30B25/18 , C30B23/02 , C23C14/06 , C23C16/30
摘要： Disclosed is a method for manufacturing a piezoelectric AlxGa1-xN (0.5≤x≤1) thin film, comprising: forming a stress control layer comprised of a Group III nitride on a silicon substrate by chemical vapor deposition (CVD); and depositing a piezoelectric AlxGa1-xN (0.5≤x≤1) thin film on the stress control layer, the thin film being deposited by PVD at 0.3 Tm (Tm is melting temperature of a piezoelectric thin film material) or higher. Further, a method for manufacturing a device in conjunction with piezoelectric AlxGa1-xN (0.5≤x≤1) thin films is provided.

2. 发明授权

US10651337B2 Supporting substrate for semiconductor device, semiconductor apparatus comprising the same, and method for manufacturing the same 有权
公开(公告)号：US10651337B2
公开(公告)日：2020-05-12
申请号：US15521466
申请日：2015-10-22
申请人： Sang Jeong An
发明人： Sang Jeong An
IPC分类号： H01L33/00 , H01L33/48 , H01L33/40 , H01L33/62
摘要： The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate, and a method for manufacturing the supporting substrate, in which the method includes: providing a first substrate having a first face and a second face opposite to the first face; forming a groove in the first substrate in a direction from the first face to the second face; forming a conducting part in the groove; bonding a second substrate to the first face of the first substrate; and forming, on the second face, a first conducting pad to be in electrical communication with the conducting part.

3. 发明授权

US09324765B2 Semiconductor light emitting apparatus comprising connecting plate 有权
标题翻译：包括连接板的半导体发光装置
公开(公告)号：US09324765B2
公开(公告)日：2016-04-26
申请号：US14234709
申请日：2012-07-17
申请人： Sang Jeong An
发明人： Sang Jeong An
IPC分类号： H01L33/00 , H01L21/00 , H01L27/15 , H01L33/60 , H01L25/075 , H01L33/62 , H01L33/50 , H01L31/0232
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L31/0232 , H01L33/504 , H01L33/60 , H01L33/62 , H01L2224/48137 , H01L2224/48091 , H01L2924/00014
摘要： The present disclosure provides a semiconductor light emitting apparatus, comprising a first light emitting unit having a current supplying layer formed at the bottom; a second light emitting unit having a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate including a conductive portion where the first light emitting unit is placed and a conductive portion where the second light emitting unit is placed; and an electric pass for electrically connecting the first light emitting unit and the second light emitting unit.
摘要翻译：本公开提供了一种半导体发光装置，包括：在底部形成有电流供给层的第一发光单元; 第二发光单元，其具有形成在底部并延伸到第二发光单元中的电流供给层; 包括放置第一发光单元的导电部分和放置第二发光单元的导电部分的连接板; 以及用于电连接第一发光单元和第二发光单元的电通路。

4. 发明申请

US20220093829A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 有权
公开(公告)号：US20220093829A1
公开(公告)日：2022-03-24
申请号：US17417904
申请日：2019-12-27
申请人： Sang Jeong AN
发明人： Sang Jeong AN
IPC分类号： H01L33/48 , H01L33/62 , H01L33/60 , H01L33/64
摘要： Disclosed is a semiconductor light emitting device comprising a semiconductor light emitting chip having electrodes; a mold, which has a first surface roughness and includes a bottom portion where the semiconductor light emitting chip is arranged and through holes formed in the bottom portion, with the through holes being comprised of a surface having a second surface roughness different from the first surface roughness, wherein at least one side of the mold facing the semiconductor light emitting chip is made of a material capable of reflecting at least 95% of light emitted by the semiconductor light emitting chip; and conductive parts provided in the through holes for electrical communication with the electrodes.

5. 发明授权

US10263140B2 Semiconductor light-emitting device and method for manufacturing the same 有权
公开(公告)号：US10263140B2
公开(公告)日：2019-04-16
申请号：US15472046
申请日：2017-03-28
申请人： Sang Jeong An
发明人： Sang Jeong An
IPC分类号： H01L33/00 , H01L33/62 , H01L33/38 , H01L33/32 , H01L33/06
摘要： The disclosed invention relates to a semiconductor light-emitting element comprising: a plurality of semiconductor layers which are provided with a growth substrate eliminating surface on the side where a first semiconductor layer is located; a support substrate which is provided with a first electrical pathway and a second electrical pathway; a joining layer which joins a first surface side of the support substrate with a second semiconductor layer side of the plurality of semiconductor layers, and is electrically linked with the first electrical pathway; a joining layer eliminating surface which is formed on the first surface, and in which the second electrical pathway is exposed, and which is open towards the plurality of semiconductor layers; and an electrical link for electrically linking the plurality of semiconductor layers with the second electrical pathway exposed in the joining layer eliminating surface.

6. 外观设计

USD977083S1 Diffuser for perfumes or essential oils 有权
公开(公告)号：USD977083S1
公开(公告)日：2023-01-31
申请号：US35513527
申请日：2021-07-30
申请人： Sang Jeong An
设计人： Sang Jeong An

7. 发明申请

US20190229230A1 TEMPLATE FOR GROWING GROUP III-NITRIDE SEMICONDUCTOR LAYER, GROUP III-NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE, AND MANUFACTURING METHOD THEREFOR 审中-公开
公开(公告)号：US20190229230A1
公开(公告)日：2019-07-25
申请号：US16098564
申请日：2017-04-28
申请人： Sang Jeong AN
发明人： Sang Jeong AN
IPC分类号： H01L33/00 , H01L33/32 , H01L33/64 , H01L33/62 , H01L33/46 , H01L33/22
摘要： A template for growing Group III-nitride semiconductor layers, a Group III-nitride semiconductor light emitting device and methods of manufacturing the same are provided. The template for growing Group III-nitride semiconductor layers includes a growth substrate having a first plane, a second plane opposite to the first plane and a groove extending inwards the growth substrate from the first plane, an insert for heat dissipation placed and secured in the groove, and a nucleation layer formed on a partially removed portion of the first plane.

8. 发明申请

US20150144870A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE 审中-公开
标题翻译：半导体发光器件
公开(公告)号：US20150144870A1
公开(公告)日：2015-05-28
申请号：US14414384
申请日：2013-07-26
申请人： Sang Jeong AN
发明人： Sang Jeong An
IPC分类号： H01L33/00 , H01L33/62 , H01L33/38 , H01L33/06 , H01L33/32
CPC分类号： H01L33/0025 , H01L25/0753 , H01L33/0079 , H01L33/06 , H01L33/32 , H01L33/382 , H01L33/62 , H01L2224/48091 , H01L2924/00014
摘要： The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer, a second semiconductor layer, and an active layer generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on the side of the first semiconductor layer; a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto.
摘要翻译：本公开涉及一种半导体发光器件，包括：支撑衬底，具有第一表面和与第一表面相对的第二表面; 形成在第一表面上的至少一个半导体堆叠，其中每个堆叠包括使用生长衬底顺序生长并由第一半导体层，第二半导体层和通过电子 - 空穴复合产生光的有源层组成的多个半导体层并且其中在所述第一半导体层的侧面上形成生长衬底去除表面; 键合层，其将多个半导体层的第二半导体层侧粘合到支撑基板的第一表面侧; 以及形成在所述第一表面上的接合层去除表面，朝向所述多个半导体层开放以向其提供电流。

9. 发明申请

US20140175472A1 Semiconductor Light Emitting Unit Connected Body 审中-公开
标题翻译：半导体发光单元连接体
公开(公告)号：US20140175472A1
公开(公告)日：2014-06-26
申请号：US14234709
申请日：2012-07-17
申请人： Sang Jeong An
发明人： Sang Jeong An
IPC分类号： H01L33/62 , H01L27/15
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/15 , H01L27/153 , H01L31/0232 , H01L33/504 , H01L33/60 , H01L33/62 , H01L2224/48137 , H01L2224/48091 , H01L2924/00014
摘要： The present disclosure provides a semiconductor light emitting unit connected body, comprising a first light emitting unit having a current supplying layer formed at the bottom; a second light emitting unit having a current supplying layer formed at the bottom and extended into the second light emitting unit; a connecting plate including a conductive portion where the first light emitting unit is placed and a conductive portion where the second light emitting unit is placed; and an electric pass for electrically connecting the first light emitting unit and the second light emitting unit.
摘要翻译：本公开提供了一种半导体发光单元连接体，包括在底部形成有电流供给层的第一发光单元; 第二发光单元，其具有形成在底部并延伸到第二发光单元中的电流供给层; 包括放置第一发光单元的导电部分和放置第二发光单元的导电部分的连接板; 以及用于电连接第一发光单元和第二发光单元的电通路。

10. 发明申请

US20170317230A1 SUPPORTING SUBSTRATE FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR APPARATUS COMPRISING THE SAME, AND METHOD FOR MANUFACTURING THE SAME 审中-公开
公开(公告)号：US20170317230A1
公开(公告)日：2017-11-02
申请号：US15521466
申请日：2015-10-22
申请人： Sang Jeong AN
发明人： Sang Jeong AN
IPC分类号： H01L33/00 , H01L33/40 , H01L33/62
CPC分类号： H01L33/0079 , H01L33/0075 , H01L33/405 , H01L33/486 , H01L33/62 , H01L2224/16225 , H01L2224/48091 , H01L2224/49107 , H01L2224/73265 , H01L2224/97 , H01L2924/181 , H01L2933/0033 , H01L2933/0066 , H01L2924/00014 , H01L2924/00012
摘要： The present disclosure relates to a method for manufacturing a semiconductor light emitting device, a semiconductor device including the supporting substrate, and a method for manufacturing the supporting substrate, in which the method includes: providing a first substrate having a first face and a second face opposite to the first face; forming a groove in the first substrate in a direction from the first face to the second face; forming a conducting part in the groove; bonding a second substrate to the first face of the first substrate; and forming, on the second face, a first conducting pad to be in electrical communication with the conducting part.

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