专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08068157B2 Image sensor with wide operating range 有权
标题翻译：图像传感器，工作范围宽
公开(公告)号：US08068157B2
公开(公告)日：2011-11-29
申请号：US12218287
申请日：2008-07-14
申请人： Sang-Il Jung , Min-Young Jung
发明人： Sang-Il Jung , Min-Young Jung
IPC分类号： H04N3/14 , H01L27/92 , H01L29/26 , H01L29/02
CPC分类号： H04N5/357 , H01L27/14609 , H01L27/14689 , H04N5/374
摘要： An image sensor includes a photoelectric converter, a source-follower transistor, and a selection transistor. The photoelectric converter generates electric charge in response to received light, and the electric charge varies a voltage of a detection node. The source-follower transistor is coupled between the detection node and an output node and has a first threshold voltage. The selection transistor is coupled between the source-follower transistor and a voltage node with a power supply voltage or a boosted voltage applied thereon, and has a second threshold voltage with a magnitude that is less than a magnitude of the first threshold voltage such that the source-follower transistor operates in saturation.
摘要翻译：图像传感器包括光电转换器，源极跟随器晶体管和选择晶体管。光电转换器响应于接收到的光而产生电荷，电荷改变检测节点的电压。源极 - 跟随器晶体管耦合在检测节点和输出节点之间并且具有第一阈值电压。选择晶体管被耦合在源极跟随器晶体管和具有施加在其上的电源电压或升压电压的电压节点之间，并且具有小于第一阈值电压的幅度的幅度的第二阈值电压，使得源极跟随器晶体管工作在饱和状态。

2. 发明申请

US20110204468A1 Image sensor and method of manufacturing the same 审中-公开
公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

3. 发明申请

US20070075337A1 Image sensor and method of fabricating the same 有权
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070075337A1
公开(公告)日：2007-04-05
申请号：US11528409
申请日：2006-09-28
申请人： Sang-Il Jung , Duk-Min Yi
发明人： Sang-Il Jung , Duk-Min Yi
IPC分类号： H01L29/768
CPC分类号： H01L27/14689 , H01L27/14603
摘要： Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.
摘要翻译：示例性实施例涉及图像传感器及其制造方法。图像传感器可以包括半导体衬底。电荷转移结构可以形成在半导体衬底上。电荷转移结构可以包括可以形成在半导体衬底中的光电转换区域和电荷检测区域之间的沟道区域上的栅极绝缘膜，以及可以形成在栅极绝缘膜上的传输栅极电极，该栅极绝缘膜可以具有掺杂有可以彼此相邻的第一导电类型杂质掺杂区域和第二导电类型杂质掺杂区域的区域。

4. 发明授权

US06573120B2 Solid state imaging device for achieving enhanced zooming characteristics and method of making the same 有权
公开(公告)号：US06573120B2
公开(公告)日：2003-06-03
申请号：US10163353
申请日：2002-06-07
申请人： Sang-Il Jung , Jun-Taek Lee
发明人： Sang-Il Jung , Jun-Taek Lee
IPC分类号： H01L2100
CPC分类号： H01L27/14683 , H01L27/14806 , H01L27/14843
摘要： A barrier area is located adjacent a horizontal transfer area and spaced from a field insulating area. The barrier area includes an insulating layer and a conductor extending from the horizontal transfer layer over the surface of a semiconductor substrate, a barrier layer of a second conductivity type formed under the surface of the semiconductor substrate and adjacent a first impurity layer of a first conductivity type of the horizontal transfer area, and a second impurity layer extending from the horizontal transfer area and formed under the barrier layer. A discharge area is located between the barrier area and the field insulating area. The discharge area includes a field insulating layer interposed between the insulating layer and the conductor extending from the barrier layer over the surface of the semiconductor substrate, and a discharge layer of the first conductivity type formed under the surface of the semiconductor substrate and adjacent the barrier layer of the barrier area over the surface layer. An impurity concentration of the discharge layer is greater than that of the first impurity layer.

5. 发明授权

US5528294A Method for eradicating smear in a charge-coupled device camera 失效
标题翻译：在电荷耦合器件相机中消除涂片的方法
公开(公告)号：US5528294A
公开(公告)日：1996-06-18
申请号：US400399
申请日：1995-03-03
申请人： Sang-il Jung , Seung-woo Lee
发明人： Sang-il Jung , Seung-woo Lee
IPC分类号： H04N5/217 , H04N5/335 , H04N5/359 , H04N5/372 , H04N5/3728 , H04N9/64
CPC分类号： H04N5/23248 , H04N3/1593 , H04N5/2175 , H04N5/23254 , H04N5/2327 , H04N5/3595 , H04N5/3728
摘要： A smear noise eradication method in a charge-coupled device (CCD) type camera comprises the steps of inputting respective image signals from one pair of CCD image pick-up devices whose lengthwise directions of corresponding vertical CCDs are perpendicularly disposed with respect to each other, and which are installed on an optical path, and eradicating smear noise after comparing the one pair of image signals according to corresponding pixels. Using the one pair of CCD image pick-up devices, the image signals of the CCD image pick-up devices are compared with each other. When the smear noise is generated, it is eradicated to obtain a high quality image signal.
摘要翻译：电荷耦合器件（CCD）型照相机中的污迹噪声消除方法包括以下步骤：从相对应的垂直CCD的纵向相对于彼此垂直设置的一对CCD摄像装置输入各图像信号，并且其安装在光路上，并且在根据相应的像素对一对图像信号进行比较之后，消除污迹噪声。使用一对CCD图像拾取装置，将CCD图像拾取装置的图像信号彼此进行比较。当产生污迹噪声时，根除以获得高质量的图像信号。

6. 发明申请

US20120018833A1 Light-Guiding Structure, Image Sensor Including The Light-Guiding Structure, And Processor-Based System Including The Image Sensor 有权
标题翻译：光引导结构，包括导光结构的图像传感器和包括图像传感器的基于处理器的系统
公开(公告)号：US20120018833A1
公开(公告)日：2012-01-26
申请号：US13186667
申请日：2011-07-20
申请人： Kang-Hyun Baek , Sang-Il Jung , Jin-Ho Kim , Jeong-Ho Lee , Jeong-Bin Kim
发明人： Kang-Hyun Baek , Sang-Il Jung , Jin-Ho Kim , Jeong-Ho Lee , Jeong-Bin Kim
IPC分类号： H01L31/0232 , G02B6/12
CPC分类号： H01L27/14629
摘要： An example embodiment relates to a light-guiding structure. The light-guiding structure may include a bottom surface and a sidewall defined by a first, a second, and a third insulating layer disposed on a semiconductor substrate. The bottom surface may be parallel to a main surface of the semiconductor substrate and may be disposed in the first insulating layer. The sidewall may penetrate the second and third insulating layers to extend to the first insulating layer, and the sidewall may be tapered with respect to the main surface of semiconductor substrate. The light-guiding structure may be included in a image sensor. The image sensor may be included in a processor-based system.
摘要翻译：示例性实施例涉及导光结构。导光结构可以包括由设置在半导体衬底上的第一，第二和第三绝缘层限定的底表面和侧壁。底表面可以平行于半导体衬底的主表面并且可以设置在第一绝缘层中。侧壁可以穿透第二和第三绝缘层以延伸到第一绝缘层，并且侧壁可以相对于半导体衬底的主表面是锥形的。导光结构可以包括在图像传感器中。图像传感器可以包括在基于处理器的系统中。

7. 发明申请

US20110294288A1 METHOD OF FABRICATING METAL INTERCONNECTION AND METHOD OF FABRICATING IMAGE SENSOR USING THE SAME 有权
标题翻译：金属互连的制造方法及使用其制造图像传感器的方法
公开(公告)号：US20110294288A1
公开(公告)日：2011-12-01
申请号：US13206703
申请日：2011-08-10
申请人： Jeong-Ho LEE , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho LEE , Young-Hoon Park , Sang-Il Jung , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L21/768
CPC分类号： H01L21/76814 , H01L21/76825 , H01L21/76838 , H01L27/14632 , H01L27/14636 , H01L27/14687
摘要： A method of fabricating a metal interconnection and a method of fabricating image sensor using the same are provided. The method of fabricating a metal interconnection including forming a interlayer dielectric layer on a substrate, forming an interconnection formation region in the interlayer dielectric layer, performing an ultraviolet (UV) treatment on the substrate after the interconnection formation region is formed and forming a metal interconnection in the interconnection formation region.
摘要翻译：提供了一种制造金属互连的方法和使用其制造图像传感器的方法。一种制造金属互连的方法，包括在衬底上形成层间电介质层，在层间电介质层中形成互连形成区，在互连形成区形成之后对衬底进行紫外（UV）处理，并形成金属互连在互连形成区域中。

8. 发明授权

US08003429B2 Method of fabricating image sensor 有权
标题翻译：图像传感器的制作方法
公开(公告)号：US08003429B2
公开(公告)日：2011-08-23
申请号：US12313067
申请日：2008-11-17
申请人： Jeong-Ho Lee , Sang-Il Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
发明人： Jeong-Ho Lee , Sang-Il Jung , Young-Hoon Park , Jun-Seok Yang , An-Chul Shin , Min-Young Jung
IPC分类号： H01L31/18
CPC分类号： H01L27/14687 , H01L27/14643
摘要： A method of fabricating an image sensor includes forming a photoelectric transformation device on a substrate and forming a dielectric layer structure on the substrate. The dielectric layer structure includes multi-layer interlayer dielectric layers and multi-layer metal interconnections which are located between the multi-layer interlayer dielectric layers. A cavity which penetrates the multi-layer interlayer dielectric layers on the photoelectric transformation device is formed. A heat treatment is performed on the substrate on which the cavity is formed.
摘要翻译：制造图像传感器的方法包括在基板上形成光电转换装置，并在基板上形成介电层结构。电介质层结构包括位于多层层间电介质层之间的多层层间电介质层和多层金属互连。形成穿透光电转换装置上的多层层间电介质层的空腔。在其上形成有空腔的基板上进行热处理。

9. 发明授权

US07679113B2 CMOS image sensor and method of fabricating the same 有权
标题翻译： CMOS图像传感器及其制造方法
公开(公告)号：US07679113B2
公开(公告)日：2010-03-16
申请号：US11446925
申请日：2006-06-05
申请人： Young-Hoon Park , Sang-Il Jung
发明人： Young-Hoon Park , Sang-Il Jung
IPC分类号： H01L31/103
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14643 , H01L27/14689
摘要： A CMOS image sensor and a method of fabricating the same are provided. The image sensor includes a blocking layer protecting a photodiode at a diode region. The blocking layer is formed to cover a top of the diode region and extended to an active region so as to cover a transfer gate and a floating diffusion layer. Therefore, the floating diffusion layer may not be attacked by an etching during a formation of sidewall spacers of various gates or by ion implantation during a formation of a junction region of a DDD or LDD structure, thus reducing a leakage current and a dark current at the floating diffusion layer.
摘要翻译：提供CMOS图像传感器及其制造方法。图像传感器包括在二极管区域保护光电二极管的阻挡层。阻挡层被形成为覆盖二极管区域的顶部并且延伸到有源区域以便覆盖传输栅极和浮动扩散层。因此，在形成各种栅极的侧壁间隔物期间，或者在形成DDD或LDD结构的结区域期间，通过离子注入，浮动扩散层可能不会受到蚀刻的侵蚀，从而减少泄漏电流和暗电流浮动扩散层。

10. 发明授权

US07612392B2 Image sensor with a gate electrode between the photoelectric conversion region and the charge detection region, the gate electrode comprising p-type and n-type regions adjacent to one another and method of fabricating the same 有权
标题翻译：在光电转换区域和电荷检测区域之间具有栅电极的图像传感器，栅电极包括彼此相邻的p型和n型区域，以及制造该栅电极的方法
公开(公告)号：US07612392B2
公开(公告)日：2009-11-03
申请号：US11528409
申请日：2006-09-28
申请人： Sang-Il Jung , Duk-Min Yi
发明人： Sang-Il Jung , Duk-Min Yi
IPC分类号： H01L31/062 , H01L31/113
CPC分类号： H01L27/14689 , H01L27/14603
摘要： Example embodiments relate to an image sensor and a fabrication method thereof. An image sensor may include a semiconductor substrate. A charge transfer structure may be formed on the semiconductor substrate. The charge transfer structure may include a gate insulating film that may be formed on a channel region in the semiconductor substrate between a photoelectric conversion region and charge detection region, and a transfer gate electrode that may be formed on the gate insulating film that may have a region doped with a first conductivity type impurity-doped region and a second conductivity type impurity-doped region which may be adjacent to each other.
摘要翻译：示例性实施例涉及图像传感器及其制造方法。图像传感器可以包括半导体衬底。电荷转移结构可以形成在半导体衬底上。电荷转移结构可以包括可以形成在半导体衬底中的光电转换区域和电荷检测区域之间的沟道区域上的栅极绝缘膜，以及可以形成在栅极绝缘膜上的传输栅极电极，该栅极绝缘膜可以具有掺杂有可以彼此相邻的第一导电类型杂质掺杂区域和第二导电类型杂质掺杂区域的区域。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式