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1. 发明申请

US20110204468A1 Image sensor and method of manufacturing the same 审中-公开
公开(公告)号：US20110204468A1
公开(公告)日：2011-08-25
申请号：US13064914
申请日：2011-04-26
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L27/146
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

2. 发明申请

US20070161140A1 Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US20070161140A1
公开(公告)日：2007-07-12
申请号：US11651542
申请日：2007-01-10
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
摘要翻译：示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

3. 发明授权

US07955924B2 Image sensor and method of manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07955924B2
公开(公告)日：2011-06-07
申请号：US11651542
申请日：2007-01-10
申请人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
发明人： Jae-ho Song , Chan Park , Young-hoon Park , Sang-il Jung , Jong-wook Hong , Keo-sung Park , Eun-soo Kim , Won-je Park , Jin-Hyeong Park , Dae-cheol Seong , Won-jeong Lee , Pu-ra Kim
IPC分类号： H01L21/8238
CPC分类号： H01L27/14603 , H01L27/14609 , H01L27/14689
摘要： Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.
摘要翻译：示例性实施例公开了能够防止或减少图像滞后的图像传感器及其制造方法。示例性方法可以包括在半导体衬底上形成栅绝缘膜和掺杂有第一导电型掺杂剂的栅极导电膜; 通过图案化栅极绝缘膜和栅极导电膜形成转移栅极图案; 以及通过在与所述传输栅极图案的一个区域相邻的所述半导体衬底中形成第一导电型光电二极管，通过在所述第一导电型光电二极管上形成第二导电型光电二极管，并且形成在半导体衬底中与传输栅极图案的另一个区域相邻的第一导电型浮动扩散区域。

4. 发明申请

US20110163362A1 Methods of fabricating image sensors and image sensors fabricated thereby 有权
标题翻译：制造图像传感器和图像传感器的方法
公开(公告)号：US20110163362A1
公开(公告)日：2011-07-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/14
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译：制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

5. 发明授权

US08624310B2 Image sensors with lightly doped drain (LDD) to reduce dark current 有权
标题翻译：具有轻掺杂漏极（LDD）的图像传感器，以减少暗电流
公开(公告)号：US08624310B2
公开(公告)日：2014-01-07
申请号：US13064176
申请日：2011-03-09
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L29/06
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译：制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

6. 发明授权

US07927902B2 Methods of fabricating image sensors and image sensors fabricated thereby 有权
公开(公告)号：US07927902B2
公开(公告)日：2011-04-19
申请号：US11798704
申请日：2007-05-16
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.

7. 发明申请

US20070267666A1 Methods of fabricating image sensors and image sensors fabricated thereby 有权
标题翻译：制造图像传感器和图像传感器的方法
公开(公告)号：US20070267666A1
公开(公告)日：2007-11-22
申请号：US11798704
申请日：2007-05-16
申请人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
发明人： Won-je Park , Chan Park , Young-hoon Park , Jae-ho Song , Jong-wook Hong , Keo-sung Park
IPC分类号： H01L31/113 , H01L21/00
CPC分类号： H01L27/14643 , H01L27/14603 , H01L27/14609 , H01L27/14641 , H01L27/14689
摘要： A method of fabricating an image sensor may include providing a substrate including light-receiving and non-light-receiving regions; forming a plurality of gates on the non-light-receiving region; ion-implanting a first-conductivity-type dopant into the light-receiving region to form a first dopant region of a pinned photodiode; primarily ion-implanting a second-conductivity-type dopant, different from the first-conductivity-type dopant, into an entire surface of the substrate, using the gates as a first mask; forming spacers on both side walls of the gates; and secondarily ion-implanting the second-conductivity-type dopant into the entire surface of the substrate, using the plurality of gates including the spacers as a second mask, to complete a second dopant region of the pinned photodiode. An image sensor may include the substrate; a transfer gate formed on the non-light-receiving region; a first dopant region in the light-receiving region; and a second dopant region formed on a surface of the light-receiving region.
摘要翻译：制造图像传感器的方法可以包括提供包括光接收和非光接收区域的基板; 在非光接收区域上形成多个栅极; 将第一导电型掺杂剂离子注入到光接收区域中以形成钉扎光电二极管的第一掺杂区域; 主要使用栅极作为第一掩模，将与第一导电类型掺杂剂不同的第二导电型掺杂剂离子注入基板的整个表面; 在门的两个侧壁上形成间隔物; 并且其次使用包括间隔物的多个栅极作为第二掩模将第二导电型掺杂剂离子注入到基板的整个表面中，以完成被钉扎的光电二极管的第二掺杂区域。图像传感器可以包括基板; 形成在非光接收区域上的传输门; 在所述光接收区域中的第一掺杂剂区域; 以及形成在光接收区域的表面上的第二掺杂剂区域。

8. 发明申请

US20080211945A1 Image sensor with extended dynamic range 审中-公开
标题翻译：具有扩展动态范围的图像传感器
公开(公告)号：US20080211945A1
公开(公告)日：2008-09-04
申请号：US12006763
申请日：2008-01-04
申请人： Jong-Wook Hong , Chan Park , Sang-Il Jung
发明人： Jong-Wook Hong , Chan Park , Sang-Il Jung
IPC分类号： H04N3/14
CPC分类号： H04N9/045 , H04N5/35563
摘要： An image sensor includes a first sub-pixel, a second sub-pixel, and an image processor. The first sub-pixel generates a first image signal with a first sensitivity, and the second sub-pixel generates a second image signal with a second sensitivity less than the first sensitivity. The image signal processor adds a change in the second image signal from a saturation level to the first image signal to generate a final image signal when the first sub-pixel is saturated.
摘要翻译：图像传感器包括第一子像素，第二子像素和图像处理器。第一子像素产生具有第一灵敏度的第一图像信号，并且第二子像素产生具有小于第一灵敏度的第二灵敏度的第二图像信号。图像信号处理器将第二图像信号从饱和度增加到第一图像信号，以在第一子像素饱和时产生最终图像信号。

9. 发明申请

US20100062559A1 Methods of manufacturing image sensors having shielding members 审中-公开
标题翻译：制造具有屏蔽部件的图像传感器的方法
公开(公告)号：US20100062559A1
公开(公告)日：2010-03-11
申请号：US12585349
申请日：2009-09-11
申请人： Jin-Hyeong Park , Taek-Soo Kim , Chan Park , Jong-Cheol Shin , Young-Hyun Lee
发明人： Jin-Hyeong Park , Taek-Soo Kim , Chan Park , Jong-Cheol Shin , Young-Hyun Lee
IPC分类号： H01L31/18
CPC分类号： H01L27/14623 , H01L27/14621 , H01L27/14627 , H01L27/1464 , H01L27/14643 , H01L27/14689 , H01L27/14698
摘要： An epitaxial layer may be formed on a substrate having a first region and a second region. A photo diode may be formed on a first portion of the epitaxial layer in the first region of the substrate. At least one transfer transistor may be formed on the epitaxial layer adjacent to the photo diode. A plurality of transistors may be formed on a second portion of the epitaxial layer in the second region. An insulation layer may be formed to cover the photo diode, the at least one transfer transistor and the plurality of transistors. A plurality of connections may be formed through the insulation layer to be electrically connected with the at least one transfer transistor and the plurality of transistors in the second region. A shielding member may be formed to expose the photo diode. The epitaxial layer and/or the substrate may be treated with a hydrogen plasma before forming the shielding member to remove dangling bonds of silicon-oxygen and/or silicon-silicon.
摘要翻译：可以在具有第一区域和第二区域的基板上形成外延层。可以在衬底的第一区域中的外延层的第一部分上形成光电二极管。可以在与光电二极管相邻的外延层上形成至少一个传输晶体管。多个晶体管可以形成在第二区域中的外延层的第二部分上。可以形成绝缘层以覆盖光电二极管，至少一个传输晶体管和多个晶体管。可以通过绝缘层形成多个连接，以与第二区域中的至少一个传输晶体管和多个晶体管电连接。可以形成屏蔽构件以暴露光电二极管。在形成屏蔽构件之前，可以用氢等离子体处理外延层和/或衬底以除去硅 - 氧和/或硅 - 硅的悬挂键。

10. 发明授权

US08804417B2 Nonvolatile memory device including dummy memory cell and program method thereof 有权
标题翻译：包括虚拟存储器单元的非易失性存储器件及其程序方法
公开(公告)号：US08804417B2
公开(公告)日：2014-08-12
申请号：US13157343
申请日：2011-06-10
申请人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
发明人： Chan Park , Changseok Kang , Sung-Il Chang , Byeong-In Choe
IPC分类号： G11C16/04 , G11C16/06 , G11C16/08 , G11C16/10 , G11C16/12 , G11C16/22
CPC分类号： G11C16/10 , G11C16/3418
摘要： A nonvolatile memory device including a dummy memory cell and a method of programming the same, wherein the nonvolatile memory device includes a dummy memory cell, and a plurality of memory cells serially connected to the dummy memory cell. The nonvolatile memory device sets a voltage provided to the dummy memory cell according to a distance between a selected memory cell among the plurality of memory cells and the dummy memory cell when a program operation is performed.
摘要翻译：一种包括虚拟存储单元的非易失性存储器件及其编程方法，其中非易失性存储器件包括一个虚拟存储单元和与该虚拟存储单元串联连接的多个存储单元。非易失性存储装置根据执行程序操作时的多个存储单元中的所选择的存储单元与虚拟存储单元之间的距离，设定提供给虚拟存储单元的电压。

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