会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明授权
    • Ionic junction for radiation detectors
    • 用于辐射探测器的离子结
    • US08723186B2
    • 2014-05-13
    • US13034772
    • 2011-02-25
    • Harry L. TullerSean R. Bishop
    • Harry L. TullerSean R. Bishop
    • H01L29/15
    • C01G15/00C01G21/16C01G21/21C01P2006/40C30B11/00C30B29/12
    • Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit.
    • 辐射检测器 检测器包括具有离子键的宽带隙材料的离子结,其具有以带正电荷的离子缺陷为主的第一区域,与以负电荷的离子缺陷为主的第二区域紧密接触,形成在连接两侧的耗尽区域,从而形成 在电场。 检测器还包括具有第一离子键的宽带隙材料的离子结,该第一离子键结的宽带隙材料以带正电荷的离子缺陷为主,与第二离子键结的宽带隙材料紧密接触,第二离子键带宽带隙材料以负电荷的离子缺陷为主,形成在结两侧的耗尽区域 在一个内置的电场。 提供电路装置以建立跨接点的电压,使得入射到接点处的辐射将导致电流在电路中流动。
    • 8. 发明申请
    • IONIC JUNCTION FOR RADIATION DETECTORS
    • 辐射探测器的离子结
    • US20120153295A1
    • 2012-06-21
    • US13034772
    • 2011-02-25
    • Harry L. TullerSean R. Bishop
    • Harry L. TullerSean R. Bishop
    • H01L31/0264H01L29/12H01L21/385H01L21/425H01L21/368H01L21/383
    • C01G15/00C01G21/16C01G21/21C01P2006/40C30B11/00C30B29/12
    • Radiation detector. The detector includes an ionic junction having an ionically bonded wide band gap material having a first region dominated by positively charged ionic defects in intimate contact with a second region dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. The detector also includes an ionic junction having a first ionically bonded wide band gap material dominated by positively charged ionic defects in intimate contact with a second ionically bonded wide band gap material dominated by negatively charged ionic defects forming depleted regions on both sides of the junction resulting in a built-in electric field. Circuit means are provided to establish a voltage across the junction so that radiation impinging upon the junction will cause a current to flow in the circuit.
    • 辐射检测器 检测器包括具有离子键的宽带隙材料的离子结,其具有以带正电荷的离子缺陷为主的第一区域,与以负电荷的离子缺陷为主的第二区域紧密接触,形成在连接两侧的耗尽区域,从而形成 在电场。 检测器还包括具有第一离子键的宽带隙材料的离子结,该第一离子键结的宽带隙材料以带正电荷的离子缺陷为主,与第二离子键结的宽带隙材料紧密接触,第二离子键带宽带隙材料由负电荷的离子缺陷主导,形成结的两侧上的耗尽区域 在一个内置的电场。 提供电路装置以建立跨接点的电压,使得入射到接点处的辐射将导致电流在电路中流动。