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1. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

2. 发明授权

US07774887B2 Scrubber box and methods for using the same 有权
标题翻译：洗涤箱和使用方法
公开(公告)号：US07774887B2
公开(公告)日：2010-08-17
申请号：US12102846
申请日：2008-04-14
申请人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B7/00 , A47L25/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

3. 发明授权

US06638810B2 Tantalum nitride CVD deposition by tantalum oxide densification 失效
公开(公告)号：US06638810B2
公开(公告)日：2003-10-28
申请号：US10015203
申请日：2001-11-05
申请人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
发明人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , C23C16/0281 , C23C16/405 , C23C16/56 , H01L21/31604 , H01L21/318 , H01L29/66181
摘要： The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and ammonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to forma metal/metal nitride liner/barrier scheme. The invention further provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.

4. 发明授权

US06251190B1 Gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构
公开(公告)号：US06251190B1
公开(公告)日：2001-06-26
申请号：US09657880
申请日：2000-09-08
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C1600
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

5. 发明授权

US06192601B1 Method and apparatus for reducing particle contamination during wafer transport 失效
标题翻译：在晶片运输期间减少颗粒污染的方法和装置
公开(公告)号：US06192601B1
公开(公告)日：2001-02-27
申请号：US09583322
申请日：2000-05-30
申请人： Steve G. Ghanayem , Madhavi Chandrachood
发明人： Steve G. Ghanayem , Madhavi Chandrachood
IPC分类号： F26B504
CPC分类号： H01L21/67167 , B08B17/02 , C23C16/4401 , H01L21/67109 , H01L21/67184 , H01L21/67248
摘要： The present invention provides method and apparatus for reducing particulate contamination during the processing of a substrate. In one embodiment, the step of preheating a substrate in a preheater to a desired temperature. The preheated substrate is transferred from the preheater to a buffer region having a pressure therein that is between about two (2) Torr and about seven hundred and sixty (760) Torr. The preheated substrate is transferred from the buffer region to a reaction chamber. Thermophoretic forces help repel particles away from the substrate surface during substrate transfer.
摘要翻译：本发明提供了在衬底加工过程中减少微粒污染的方法和装置。在一个实施例中，将预热器中的衬底预热到所需温度的步骤。预热的基底从预热器转移到其中压力在约二（2）乇和约七百六十六毫乇之间的缓冲区。预热的基底从缓冲区转移到反应室。在底物转移过程中，热ic力有助于将颗粒从衬底表面排除。

6. 发明授权

US5552016A Method and apparatus for etchback endpoint detection 失效
标题翻译：回蚀端点检测的方法和装置
公开(公告)号：US5552016A
公开(公告)日：1996-09-03
申请号：US516115
申请日：1995-08-17
申请人： Steve G. Ghanayem
发明人： Steve G. Ghanayem
IPC分类号： H01J37/32 , H01L21/306 , C23F1/02
CPC分类号： H01J37/32935
摘要： A method and apparatus (110) for determining the endpoint (e.g., TC1) of an etching step in a plasma etching process (101) for use in semiconductor wafer manufacturing. In one embodiment, an optical bandpass filter (e.g., 1542) is used for detecting a wavelength of electromagnetic emissions from elements of a chlorine-argon plasma employed to etch a titanium nitride layer from a semiconductor wafer so as to achieve a more precise determination of the endpoint of the process step. In another embodiment, a plurality of wavelengths (e.g., 1541-1544) in the electromagnetic emissions from elements in the plasma are combined for even more precise determination of the endpoint of a process step. The emissions of interest may be from the same or different elements in the plasma which may be produced by the etching materials or by materials from the wafer being etched.
摘要翻译：一种用于确定用于半导体晶片制造的等离子体蚀刻工艺（101）中的蚀刻步骤的端点（例如，TC1）的方法和装置（110）。在一个实施例中，光带通滤波器（例如，1542）用于检测来自用于从半导体晶片蚀刻氮化钛层的氯 - 氩等离子体的元件的电磁辐射的波长，以便更准确地确定流程步骤的终点。在另一个实施例中，来自等离子体中的元件的电磁发射中的多个波长（例如，1541-1544）被组合以更准确地确定处理步骤的端点。感兴趣的发射可以来自等离子体中可能由蚀刻材料产生的相同或不同的元素，或来自被蚀刻的晶片的材料。

7. 发明申请

US20080210258A1 SCRUBBER BOX AND METHODS FOR USING THE SAME 有权
标题翻译： SCRUBBER BOX及其使用方法
公开(公告)号：US20080210258A1
公开(公告)日：2008-09-04
申请号：US12102846
申请日：2008-04-14
申请人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
发明人： Joseph Yudovsky , Avi Tepman , Kenneth R. Reynolds , Younes Achkire , Dan A. Marohl , Steve G. Ghanayem , Alexander S. Polyak , Gary Ettinger , Haochuan Zhang , Hui Chen
IPC分类号： B08B7/00 , A47L25/00
CPC分类号： H01L21/67046 , B08B1/04
摘要： A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要翻译：提供了一种洗涤器箱，其包括适于接收用于清洁的基底的罐，支撑在罐外部并且适于耦合到设置在罐内的洗涤器刷的端部;马达，其安装到每个支撑件上并适于旋转洗涤器电刷，支架通过适于允许洗涤器刷子进入的球面轴承可枢转地安装的基座，经由曲柄和摇臂机构适应的基本上同时地使支撑件朝向或远离彼此枢转的电刷间隙致动器以便允许洗涤器刷子基本上同时实现或断开与基板的接触，以及适于将两个球形轴承朝向或远离彼此移动的脚趾致动器，以便调节洗涤器之间的束缚角度刷子

8. 发明授权

US06602770B2 Silicon layer to improve plug filling by CVD 失效
公开(公告)号：US06602770B2
公开(公告)日：2003-08-05
申请号：US09981671
申请日：2001-10-16
申请人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
发明人： Sandeep A. Desai , Scott Brad Herner , Steve G. Ghanayem
IPC分类号： H01L2120
CPC分类号： H01L21/76855 , H01L21/76843 , H01L21/76862 , H01L21/76876 , H01L21/76877
摘要： A method of forming an electrically conductive plug in an opening in a dielectric layer of a substrate. Silane is thermally decomposed so as to deposit a layer of material on the walls of an opening. Subsequently, electrically conductive material is deposited so as to fill the opening.

9. 发明授权

US06319766B1 Method of tantalum nitride deposition by tantalum oxide densification 失效
标题翻译：通过氧化钽致密化的氮化钽CVD沉积方法
公开(公告)号：US06319766B1
公开(公告)日：2001-11-20
申请号：US09510582
申请日：2000-02-22
申请人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
发明人： Mouloud Bakli , Steve G. Ghanayem , Huyen T. Tran
IPC分类号： H01L218242
CPC分类号： H01L27/1087 , C23C16/0281 , C23C16/405 , C23C16/56 , H01L21/31604 , H01L21/318 , H01L29/66181
摘要： The invention provides a method for forming a metal nitride film by depositing a metal oxide film on the substrate and exposing the metal oxide film to a nitrating gas to densify the metal oxide and form a metal nitride film. The metal oxide film is deposited by the decomposition of a chemical vapor deposition precursor. The nitrating step comprises exposing the metal oxide film to a thermally or plasma enhanced nitrating gas preferably comprising nitrogen, oxygen, and anunonia. The invention also provides a process for forming a liner/barrier scheme for a metallization stack by forming a metal nitride layer over the substrate by the densification of a metal oxide layer by a nitrating gas depositing a metal liner layer. Optionally, a metal liner layer may be deposited over substrate prior to the metal nitride layer to form a metal/metal nitride liner/barrier scheme. The invention firer provides a process to form a microelectronic device comprising forming a first electrode, forming a metal nitride layer over the first electrode by densifying a metal oxide layer by a nitrating gas to form a metal nitride layer, depositing a dielectric layer over the metal nitride layer, and forming a second electrode over the dielectric layer. Alternatively, the metal nitride film may comprise the first and second electrodes.
摘要翻译：本发明提供一种通过在基板上沉积金属氧化物膜并将金属氧化物膜暴露于硝化气体以致使金属氧化物致密并形成金属氮化物膜的方法来形成金属氮化物膜。通过化学气相沉积前体的分解沉积金属氧化物膜。硝化步骤包括将金属氧化物膜暴露于热或等离子体增强的硝化气体中，优选包括氮气，氧气和氧气。本发明还提供了一种用于通过用沉积金属衬垫层的硝化气体致密化金属氧化物层而在衬底上形成金属氮化物层来形成用于金属化堆叠的衬里/势垒方案的方法。可选地，金属衬垫层可以在金属氮化物层之前沉积在衬底上以形成金属/金属氮化物衬垫/屏障方案。本发明的火焰提供了形成微电子器件的方法，包括形成第一电极，通过用硝化气体致密化金属氧化物层，在第一电极上形成金属氮化物层，形成金属氮化物层，在金属上沉积介电层氮化物层，并且在电介质层上形成第二电极。或者，金属氮化物膜可以包括第一和第二电极。

10. 发明授权

US6162715A Method of forming gate electrode connection structure by in situ chemical vapor deposition of tungsten and tungsten nitride 失效
标题翻译：通过钨和氮化钨的原位化学气相沉积形成栅电极连接结构的方法
公开(公告)号：US6162715A
公开(公告)日：2000-12-19
申请号：US114839
申请日：1998-07-14
申请人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
发明人： Alfred Mak , Kevin Lai , Cissy Leung , Steve G. Ghanayem , Thomas Wendling , Ping Jian
IPC分类号： C23C16/02 , C23C16/14 , C23C16/34 , H01L21/28 , H01L21/285 , H01L21/336 , H01L21/768 , H01L29/49 , H01L21/3205
CPC分类号： H01L29/66583 , C23C16/0245 , C23C16/14 , C23C16/34 , H01L21/28061 , H01L21/76843 , H01L29/4941
摘要： A gate electrode connection structure formed by deposition of a tungsten nitride barrier layer and a tungsten plug, where the tungsten nitride and tungsten deposition are accomplished in situ in the same chemical vapor deposition (CVD) chamber. The tungsten nitride deposition is performed by plasma enhanced chemical vapor deposition (PECVD) using a plasma containing hydrogen, nitrogen and tungsten hexafluoride. Before deposition the wafer is pretreated with a hydrogen plasma to improve adhesion. The tungsten deposition process may be done by CVD using tungsten hexafluoride and hydrogen. A tungsten nucleation step is included in which a process gas including a tungsten hexafluoride, diborane and hydrogen are flowed into a deposition zone of a substrate processing chamber. Following the nucleation step, the diborane is shut off while the pressure level and other process parameters are maintained at conditions suitable for bulk deposition of tungsten.
摘要翻译：通过沉积氮化钨阻挡层和钨插塞形成的栅电极连接结构，其中氮化钨和钨沉积在相同的化学气相沉积（CVD）室中原位完成。通过使用含有氢，氮和六氟化钨的等离子体等离子体增强化学气相沉积（PECVD）进行氮化钨沉积。在沉积之前，用氢等离子体预处理晶片以提高粘附性。钨沉积工艺可以使用六氟化钨和氢气进行CVD。包括钨成核步骤，其中包括六氟化钨，乙硼烷和氢的处理气体流入基板处理室的沉积区。在成核步骤之后，关闭乙硼烷，同时将压力水平和其它工艺参数保持在适合于钨的体积沉积的条件下。

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