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1. 发明申请

US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 有权
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：US20140120723A1
公开(公告)日：2014-05-01
申请号：US14062804
申请日：2013-10-24
申请人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
发明人： Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
IPC分类号： H01L21/285
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCl 5或WCl 6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

2. 发明申请

US20140017408A1 Deposition Of N-Metal Films Comprising Aluminum Alloys 有权
标题翻译：包含铝合金的N-金属膜的沉积
公开(公告)号：US20140017408A1
公开(公告)日：2014-01-16
申请号：US13930194
申请日：2013-06-28
申请人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
发明人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
IPC分类号： C23C18/00
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

3. 发明申请

US20130115383A1 DEPOSITION OF METAL FILMS USING ALANE-BASED PRECURSORS 有权
标题翻译：金属膜的沉积使用基于ALANE的前驱体
公开(公告)号：US20130115383A1
公开(公告)日：2013-05-09
申请号：US13669571
申请日：2012-11-06
申请人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
发明人： Xinliang Lu , David Thompson , Jeffrey W. Anthis , Mei Chang , Seshadri Ganguli , Wei Tang , Srinivas Gandikota , Atif Noori
IPC分类号： C23C16/455
CPC分类号： C23C16/455 , C23C16/06 , C23C16/45525 , H01L21/28562 , H01L21/76841
摘要： Provided are methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR′2)4 or Ta(NR′2)5, wherein R′ is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
摘要翻译：提供沉积纯金属和铝合金金属膜的方法。某些方法包括使基材表面与第一和第二前体接触，第一前体包含选自二甲基氢化铝，与胺配位的烷烃的铝前驱物和具有下列结构的化合物：其中R是C1-C6烷基，并且第二前体包含金属卤化物。其它方法涉及将衬底顺序地暴露于第一和第二前体，第一前体包含如上所述的铝前体，第二前体包含Ti（NR'2）4或Ta（NR'2）5，其中R' 是烷基，烯基，炔基，酮基或醛基。

4. 发明申请

US20140112824A1 Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content 有权
标题翻译：包含铝含量高的铝合金薄膜的沉积
公开(公告)号：US20140112824A1
公开(公告)日：2014-04-24
申请号：US14058406
申请日：2013-10-21
申请人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
发明人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
IPC分类号： C23C16/12
CPC分类号： C23C16/30 , C23C16/45531 , C23C16/45534
摘要： Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
摘要翻译：提供的是包含铝，碳和金属的膜，其中铝以大于约16％的元素含量和小于约50％的碳存在。还提供了沉积它们的方法。

5. 发明授权

US07691442B2 Ruthenium or cobalt as an underlayer for tungsten film deposition 有权
标题翻译：钌或钴作为钨膜沉积的底层
公开(公告)号：US07691442B2
公开(公告)日：2010-04-06
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B32B15/00 , B32B15/01 , C23C16/06
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

6. 发明申请

US20090142474A1 RUTHENIUM AS AN UNDERLAYER FOR TUNGSTEN FILM DEPOSITION 有权
标题翻译：作为金属沉积沉积物的底层
公开(公告)号：US20090142474A1
公开(公告)日：2009-06-04
申请号：US12197049
申请日：2008-08-22
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： B05D5/12
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： Embodiments of the invention provide a method for depositing materials on substrates. In one embodiment, the method includes depositing a barrier layer containing tantalum or titanium on a substrate, depositing a ruthenium layer or a cobalt layer on the barrier layer, and depositing a tungsten bulk layer thereover. In some examples, the barrier layer may contain tantalum nitride deposited by an atomic layer deposition (ALD) process, the tungsten bulk layer may be deposited by a chemical vapor deposition (CVD) process, and the ruthenium or cobalt layer may be deposited by an ALD process. The ruthenium or cobalt layer may be exposed to a soak compound, such as hydrogen, diborane, silane, or disilane, during a soak process prior to depositing the tungsten bulk layer. In some examples, a tungsten nucleation layer may be deposited on the ruthenium or cobalt layer, such as by ALD, prior to depositing the tungsten bulk layer.
摘要翻译：本发明的实施例提供了一种在衬底上沉积材料的方法。在一个实施例中，该方法包括在衬底上沉积含有钽或钛的阻挡层，在阻挡层上沉积钌层或钴层，并在其上沉积钨体层。在一些示例中，阻挡层可以包含通过原子层沉积（ALD）工艺沉积的氮化钽，可以通过化学气相沉积（CVD）工艺沉积钨体层，并且钌或钴层可以通过 ALD过程。在沉积钨体层之前的浸泡过程中，钌或钴层可以暴露于浸泡化合物，例如氢，乙硼烷，硅烷或乙硅烷。在一些实例中，在沉积钨体层之前，例如通过ALD，钨成核层可沉积在钌或钴层上。

7. 发明授权

US07429402B2 Ruthenium as an underlayer for tungsten film deposition 失效
标题翻译：钌作为钨膜沉积的底层
公开(公告)号：US07429402B2
公开(公告)日：2008-09-30
申请号：US11009331
申请日：2004-12-10
申请人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
发明人： Srinivas Gandikota , Madhu Moorthy , Amit Khandelwal , Avgerinos V. Gelatos , Mei Chang , Kavita Shah , Seshadri Ganguli
IPC分类号： C23C16/00 , H01L21/20 , H01L21/469
CPC分类号： H01L21/28556 , C23C16/0281 , C23C16/06 , C23C16/45525 , C23C16/45529 , H01L21/28562 , H01L21/76843 , H01L21/76846 , H01L21/76862 , H01L21/76876 , H01L21/76877 , Y10T428/12771 , Y10T428/12812 , Y10T428/12861 , Y10T428/12875
摘要： In one embodiment, a method for depositing a tungsten-containing film on a substrate is provided which includes depositing a barrier layer on the substrate, such as a titanium or tantalum containing barrier layer and depositing a ruthenium layer on the barrier layer. The method further includes depositing a tungsten nucleation layer on the ruthenium layer and depositing a tungsten bulk layer on the tungsten nucleation layer. The barrier layer, the ruthenium layer, the tungsten nucleation layer and the tungsten bulk layer are independently deposited by an ALD process, a CVD process or a PVD process, preferably by an ALD process. In some examples, the substrate is exposed to a soak process prior to depositing a subsequent layer, such as between the deposition of the barrier layer and the ruthenium layer, the ruthenium layer and the tungsten nucleation layer or the tungsten nucleation layer and the tungsten bulk layer.
摘要翻译：在一个实施例中，提供了一种在衬底上沉积含钨膜的方法，其包括在衬底上沉积阻挡层，例如含有钛或钽的阻挡层，并在阻挡层上沉积钌层。该方法还包括在钌层上沉积钨成核层并在钨成核层上沉积钨体层。优选通过ALD工艺，通过ALD工艺，CVD工艺或PVD工艺独立地沉积阻挡层，钌层，钨成核层和钨体层。在一些实例中，在沉积后续层之前，例如在阻挡层和钌层的沉积，钌层和钨成核层或钨成核层和钨体之间，将衬底暴露于浸泡工艺层。

8. 发明授权

US07838441B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07838441B2
公开(公告)日：2010-11-23
申请号：US12426815
申请日：2009-04-20
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

9. 发明授权

US07521379B2 Deposition and densification process for titanium nitride barrier layers 失效
标题翻译：氮化钛阻挡层的沉积和致密化过程
公开(公告)号：US07521379B2
公开(公告)日：2009-04-21
申请号：US11869557
申请日：2007-10-09
申请人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： Amit Khandelwal , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/44 , H01L21/469
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

10. 发明申请

US20090280640A1 DEPOSITION AND DENSIFICATION PROCESS FOR TITANIUM NITRIDE BARRIER LAYERS 失效
标题翻译：硝酸钡阻挡层的沉积和渗透过程
公开(公告)号：US20090280640A1
公开(公告)日：2009-11-12
申请号：US12426815
申请日：2009-04-20
申请人： AMIT KHANDELWAL , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
发明人： AMIT KHANDELWAL , Avgerinos V. Gelatos , Christophe Marcadal , Mei Chang
IPC分类号： H01L21/768
CPC分类号： H01L21/28556 , H01L21/321 , H01L21/76843 , H01L21/76862
摘要： In one embodiment, a method for forming a titanium nitride barrier material on a substrate is provided which includes depositing a titanium nitride layer on the substrate by a metal-organic chemical vapor deposition (MOCVD) process, and thereafter, densifying the titanium nitride layer by exposing the substrate to a plasma process. In one example, the MOCVD process and the densifying plasma process is repeated to form a barrier stack by depositing a second titanium nitride layer on the first titanium nitride layer. In another example, a third titanium nitride layer is deposited on the second titanium nitride layer. Subsequently, the method provides depositing a conductive material on the substrate and exposing the substrate to a annealing process. In one example, each titanium nitride layer may have a thickness of about 15 Å and the titanium nitride barrier stack may have a copper diffusion potential of less than about 5×1010 atoms/cm2.
摘要翻译：在一个实施例中，提供了一种在衬底上形成氮化钛阻挡材料的方法，其包括通过金属 - 有机化学气相沉积（MOCVD）工艺在衬底上沉积氮化钛层，然后通过以下步骤致密化氮化钛层：将衬底暴露于等离子体工艺。在一个实例中，通过在第一氮化钛层上沉积第二氮化钛层来重复MOCVD工艺和致密等离子体工艺以形成势垒堆叠。在另一示例中，在第二氮化钛层上沉积第三氮化钛层。随后，该方法提供在衬底上沉积导电材料并将衬底暴露于退火过程。在一个示例中，每个氮化钛层可以具有约15埃的厚度，并且氮化钛阻挡层可以具有小于约5×10 10原子/ cm 2的铜扩散电位。

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