专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08651121B2 Substrate processing apparatus, substrate processing method, and storage medium 有权
标题翻译：基板处理装置，基板处理方法和存储介质
公开(公告)号：US08651121B2
公开(公告)日：2014-02-18
申请号：US12372265
申请日：2009-02-17
申请人： Takehiko Orii , Kenji Sekiguchi
发明人： Takehiko Orii , Kenji Sekiguchi
IPC分类号： B08B3/00
CPC分类号： H01L21/02052 , H01L21/67028 , H01L21/67034
摘要： A substrate processing apparatus includes a chamber configured to dispose a substrate to be processed with a substrate holder, a spin chuck to rotate the substrate, a gas discharging head configured to discharge a dehumidified gas to the substrate, a processing liquid supply nozzle, an IPA supply nozzle, and a driving device configured to move the gas discharging head between a retreat position of an upper part of the chamber and an approach position near the substrate. In particular, the gas discharging head is positioned at the approach position when the IPA is supplied to the substrate so that the dehumidified gas is supplied from the gas discharging head to the substrate when the IPA is supplied to the substrate.
摘要翻译：一种基板处理装置，包括：配置成用基板保持件配置被处理基板的室，旋转基板的旋转卡盘，将排出除湿气体排出到基板的排气头，处理液供给喷嘴，IPA 供给喷嘴和驱动装置，该驱动装置构造成使所述气体排出头在所述室的上部的后退位置和所述基板附近的接近位置之间移动。特别地，当将IPA提供给基板时，气体放电头位于接近位置，使得当将IPA供给到基板时，将除气从气体排出头供应到基板。

2. 发明授权

US07803230B2 Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method 有权
标题翻译：基板清洁装置，基板清洗方法和用于该方法的记录程序的介质
公开(公告)号：US07803230B2
公开(公告)日：2010-09-28
申请号：US10593560
申请日：2005-04-05
申请人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
发明人： Masaru Amai , Kenji Sekiguchi , Takehiko Orii , Hiroki Ohno , Satoru Tanaka , Takuya Mori
IPC分类号： B08B7/00
CPC分类号： H01L21/67051 , B08B1/04 , H01L21/67046
摘要： In a substrate cleaning method and a substrate cleaning method according to the present invention, a brush 3 is brought into contact with a substrate W while rotating the same, and a cleaning position Sb of the brush 3 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. A process fluid formed of liquid droplets and a gas is sprayed by a two-fluid nozzle 5 onto the substrate W, and a cleaning position Sn of the two-fluid nozzle 5 is moved relative to the substrate W from a center part of the substrate W toward a peripheral part thereof. During the movement of the cleaning position Sb of the brush 3 from the center part of the substrate W toward the peripheral part thereof, the cleaning position Sb of the two-fluid nozzle is positioned nearer to a center P0 than the cleaning position Sb of the brush 3. Since contaminations of the brush are prevented from adhering again to the wafer, it can be avoided that the wafer W is contaminated.
摘要翻译：在根据本发明的基板清洗方法和基板清洗方法中，刷子3在旋转基板W的同时与基板W接触，并且刷子3的清洁位置Sb相对于基板W从衬底W的中心部分朝向其周边部分。由液滴和气体形成的工艺流体由双流体喷嘴5喷射到基板W上，并且双流体喷嘴5的清洁位置Sn相对于基板W从基板的中心部分移动 W朝向其周边部分。在将刷子3的清扫位置Sb从基板W的中央部朝向其周边部移动的过程中，双流体喷嘴的清洗位置Sb位于比清洗位置Sb更靠近中心P0的位置由于刷子的污染被防止再次粘附到晶片，因此可以避免晶片W被污染。

3. 发明授权

US07402523B2 Etching method 有权
标题翻译：蚀刻方法
公开(公告)号：US07402523B2
公开(公告)日：2008-07-22
申请号：US11393915
申请日：2006-03-31
申请人： Eiichi Nishimura , Takehiko Orii
发明人： Eiichi Nishimura , Takehiko Orii
IPC分类号： H01L21/00 , B44C1/22
CPC分类号： H01L21/31133 , H01L21/31111 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/6708 , H01L21/76802
摘要： A method for etching an insulation film through a patterned mask, includes the steps of etching the insulation film until just before an underlayer is about to be exposed by applying a plasma, and modifying a quality of a remaining film of the insulation film by applying another plasma which is different from the plasma used in the above etching process. The method further includes the process of removing the modified remaining film of the insulation film with a liquid chemical. The process of removing the modified remaining film can be also achieved by a dry etching method not employing a plasma.
摘要翻译：通过图案化掩模蚀刻绝缘膜的方法包括以下步骤：在通过施加等离子体即将露出底层之前蚀刻绝缘膜，并通过施加另一种来改变绝缘膜的剩余膜的质量与上述蚀刻工艺中使用的等离子体不同的等离子体。该方法还包括用液体化学品去除绝缘膜的改性剩余膜的方法。通过不使用等离子体的干式蚀刻方法也可以实现除去改性后的膜的工序。

4. 发明申请

US20070128373A1 Electroless plating apparatus and electroless plating method 审中-公开
标题翻译：无电镀设备和化学镀方法
公开(公告)号：US20070128373A1
公开(公告)日：2007-06-07
申请号：US11606158
申请日：2006-11-30
申请人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
发明人： Kenichi Hara , Mitsuaki Iwashita , Takehiko Orii , Takayuki Toshima
IPC分类号： B05D5/12 , B05D3/04 , B05D1/18 , B05C11/00 , B05B3/00
CPC分类号： H01L21/6723 , C23C18/1628 , C23C18/1676 , C23C18/168 , H01L21/6708 , H01L21/67109 , H01L21/67248
摘要： An electroless plating apparatus which supplies a plating solution to a top surface of a substrate to effect electroless plating, comprises a substrate support section which supports a substrate, a plating-solution retaining section which retains the plating solution to be supplied to the top surface of the substrate, a plating-solution feeding pipe which guides the plating solution from the plating-solution retaining section to the top surface of the substrate supported by the substrate support section, a plating-solution temperature controlling mechanism which controls a temperature of the plating solution flowing in the plating-solution feeding pipe, and a suction mechanism which sucks the plating solution in the plating-solution feeding pipe toward the plating-solution retaining section when feeding of the plating solution to the top surface of the substrate through the plating-solution feeding pipe is stopped.
摘要翻译：向基板的上表面供给电镀液的无电解电镀装置包括：支撑基板的基板支撑部，保持要供给到基板的上表面的电镀液的电镀液保持部; 基板，将电镀液从电镀液保持部引导到由基板支撑部支撑的基板的上表面的电镀液供给管，控制电镀液的温度的电镀液温度控制机构在电镀溶液供给管中流动的吸附机构，在将电镀液通过电镀液供给到基板的上表面时，将电镀液供给管内的电镀液吸附到电镀液保持部的吸引机构进料管停止。

5. 发明授权

US07171973B2 Substrate processing apparatus 有权
标题翻译：基板加工装置
公开(公告)号：US07171973B2
公开(公告)日：2007-02-06
申请号：US10195453
申请日：2002-07-16
申请人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
发明人： Takehiko Orii , Tatsuya Nishida , Osamu Kuroda
IPC分类号： B08B3/02
CPC分类号： H01L21/67051 , C03C23/0075 , H01L21/67028 , H01L21/67178 , Y10S134/901 , Y10S134/902
摘要： The substrate processing apparatus has an enclosure structure enclosing a substrate support member to define a processing space. The enclosure structure has an opening closed by a shutter. A processing fluid supply unit, which supplies processing fluid, such as chemical liquid, is accommodated in a housing. The processing fluid supply unit accommodated in the housing is advanced into the processing space through the opening of the enclosure structure to feed the processing fluid onto the substrate supported by the substrate support member.
摘要翻译：衬底处理设备具有包围衬底支撑构件以限定处理空间的封闭结构。外壳结构具有由快门关闭的开口。供给处理流体（如化学液体）的处理流体供应单元容纳在壳体中。容纳在壳体中的处理流体供应单元通过外壳结构的打开而进入处理空间，以将处理流体供给到由基板支撑构件支撑的基板上。

6. 发明授权

US06979655B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06979655B2
公开(公告)日：2005-12-27
申请号：US10295041
申请日：2002-11-15
申请人： Takayuki Niuya , Takehiko Orii , Hiroyuki Mori , Hiroshi Yano , Mitsunori Nakamori
发明人： Takayuki Niuya , Takehiko Orii , Hiroyuki Mori , Hiroshi Yano , Mitsunori Nakamori
IPC分类号： H01L21/304 , G03F7/42 , H01L21/027 , H01L21/302 , H01L21/306 , H01L21/311 , H01L21/461 , H01I21/302
CPC分类号： H01L21/31133 , G03F7/422 , H01L21/02063 , H01L21/31138 , H01L21/67017 , H01L21/67028 , H01L21/76814
摘要： A resist film and a polymer layer adhered on a semiconductor substrate can be removed by the method according to the present invention. A first processing liquid, typically including a oxidizing agent, such as hydrogen peroxide solution, is fed to the substrate, thereby the condition of the resist film and the polymer layer is changed. Next, a second processing liquid, typically including a dimethyl sulfoxide and an amine solvent, is fed to the substrate, thereby the resist film and the polymer layer is dissolved and lifted off from the substrate. A sputtered copper particles included in the polymer layer can also be removed.
摘要翻译：可以通过根据本发明的方法去除粘附在半导体衬底上的抗蚀剂膜和聚合物层。通常包含氧化剂如过氧化氢溶液的第一处理液体被供给至基板，从而改变了抗蚀剂膜和聚合物层的状态。接下来，将通常包含二甲基亚砜和胺溶剂的第二处理液体供给到基板，从而将抗蚀剂膜和聚合物层溶解并从基板剥离。包含在聚合物层中的溅射铜颗粒也可以被去除。

7. 发明授权

US06578592B1 Processing apparatus with horizontally movable enclosing element 有权
标题翻译：具有水平移动封闭元件的加工设备
公开(公告)号：US06578592B1
公开(公告)日：2003-06-17
申请号：US09783957
申请日：2001-02-16
申请人： Yuji Kamikawa , Takehiko Orii , Kyouji Kohama
发明人： Yuji Kamikawa , Takehiko Orii , Kyouji Kohama
IPC分类号： B08B302
CPC分类号： H01L21/67051 , B08B3/02 , Y10S134/902
摘要： A cleaning system has a movable outer tubular member (26) and a movable inner tubular member (27). A bottom part of the inner tubular (27) is inclined. A first drain pipe (47) is connected to the inner tubular member (27). The first drain pipe (47) has an end part slidably inserted into a second drain pipe (76).
摘要翻译：清洁系统具有可移动的外部管状构件（26）和可移动内部管状构件（27）。内管（27）的底部是倾斜的。第一排水管（47）连接到内管状构件（27）。第一排水管（47）具有可滑动地插入第二排水管（76）的端部。

8. 发明授权

US10199240B2 Substrate processing method, substrate processing apparatus, and storage medium 有权
公开(公告)号：US10199240B2
公开(公告)日：2019-02-05
申请号：US13482318
申请日：2012-05-29
申请人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
发明人： Hidekazu Hayashi , Yohei Sato , Hisashi Okuchi , Hiroshi Tomita , Kazuyuki Mitsuoka , Mitsuaki Iwashita , Takehiko Orii , Gen You , Hiroki Ohno , Takayuki Toshima
IPC分类号： H01L21/67 , H01L21/02 , B08B7/00
摘要： A substrate processing method and apparatus which can remove an anti-drying liquid, which has entered a three-dimensional pattern with recessed portions formed in a substrate, in a relatively short time. The substrate processing method includes the steps of: carrying a substrate, having a three-dimensional pattern formed in a surface, into a processing container, said pattern being covered with an anti-drying liquid that has entered the recessed portions of the pattern; heating the substrate and supplying a pressurizing gas or a fluid in a high-pressure state into the processing container, thereby forming a high-pressure atmosphere in the processing container before the anti-drying liquid vaporizes to such an extent as to cause pattern collapse and bringing the anti-drying liquid into a high-pressure state while keeping the liquid in the recessed portions of the pattern; and thereafter discharging a fluid in a high-pressure state or a gaseous state from the processing container.

9. 发明授权

US08770138B2 Semiconductor manufacturing apparatus and semiconductor manufacturing method 有权
标题翻译：半导体制造装置及半导体制造方法
公开(公告)号：US08770138B2
公开(公告)日：2014-07-08
申请号：US13180702
申请日：2011-07-12
申请人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
发明人： Kenichi Hara , Mitsuaki Iwashita , Takashi Tanaka , Takayuki Toshima , Takehiko Orii
IPC分类号： B05C11/10 , B05B13/02 , B05B3/00
CPC分类号： H01L21/288 , C23C18/1628 , H01L21/76849
摘要： A plated film having a uniform film thickness is formed on a surface of a substrate. A semiconductor manufacturing apparatus includes: a holding mechanism for holding a substrate rotatably; a nozzle for supplying a processing solution for performing a plating process on a processing target surface of the substrate; a substrate rotating mechanism for rotating the substrate held by the holding mechanism in a direction along the processing target surface; a nozzle driving mechanism for moving the nozzle in a direction along the processing target surface at a position facing the processing target surface of the substrate held by the holding mechanism; and a control unit for controlling the supply of the processing solution by the nozzle and the movement of the nozzle by the nozzle driving mechanism.
摘要翻译：在基板的表面上形成具有均匀膜厚的镀膜。半导体制造装置包括：可旋转地保持基板的保持机构; 用于向所述基板的处理目标表面供给用于进行电镀处理的处理液的喷嘴; 基板旋转机构，用于沿着所述处理对象表面的方向旋转由所述保持机构保持的所述基板; 喷嘴驱动机构，用于沿着与所述保持机构保持的所述基板的处理对象面对置的位置沿着所述处理对象面的方向移动所述喷嘴; 以及控制单元，用于控制由喷嘴供应处理溶液和通过喷嘴驱动机构移动喷嘴。

10. 发明授权

US08741070B2 Liquid processing method, liquid processing apparatus and recording medium 有权
标题翻译：液体处理方法，液体处理装置和记录介质
公开(公告)号：US08741070B2
公开(公告)日：2014-06-03
申请号：US13328058
申请日：2011-12-16
申请人： Nobutaka Mizutani , Tsutae Omori , Takehiko Orii , Akira Fujita
发明人： Nobutaka Mizutani , Tsutae Omori , Takehiko Orii , Akira Fujita
IPC分类号： B08B3/04
CPC分类号： H01L21/02057 , H01L21/67028 , H01L21/67051
摘要： Disclosed are a liquid processing method, a liquid processing apparatus, and a recording medium that can prevent convex portions of a target substrate from collapsing when a rinsing liquid is dried. A base surface of a target substrate is hydrophilized and the surfaces of convex portions become water-repellent by surface-processing the target substrate which includes a main body, a plurality of convex portions protruding from the main body, and a base surface formed between the convex portions on the substrate main body. Next, a rinsing liquid is supplied to the target substrate which has been subjected to the surface processing. Thereafter, the rinsing liquid is removed from the target substrate.
摘要翻译：公开了一种液体处理方法，液体处理装置和记录介质，其可以防止目标基板的凸部在冲洗液体干燥时塌陷。目标基板的基面被亲水化，凸部的表面通过表面处理包括主体，从主体突出的多个凸部的目标基板和形成在主体上的基面之间而形成防水性基板主体上的凸部。接下来，向经过表面处理的目标基板供给冲洗液。此后，从目标基板除去冲洗液。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式