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1. 发明申请

US20120049328A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 审中-公开
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US20120049328A1
公开(公告)日：2012-03-01
申请号：US13373102
申请日：2011-11-04
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems encountered in the art.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了本领域遇到的问题。

2. 发明申请

US20100002738A1 Nitride-based semiconductor light-emitting device 审中-公开
标题翻译：氮化物系半导体发光元件
公开(公告)号：US20100002738A1
公开(公告)日：2010-01-07
申请号：US12458128
申请日：2009-07-01
申请人： Teruyoshi Takakura , Yuhzoh Tsuda , Masataka Ohta
发明人： Teruyoshi Takakura , Yuhzoh Tsuda , Masataka Ohta
IPC分类号： H01S5/00
CPC分类号： H01S5/32341 , H01S5/028 , H01S5/1082 , H01S5/22 , H01S5/3202
摘要： It is intended to improve operation characteristics of a nitride-based semiconductor light-emitting device including a nitride-based semiconductor crystal substrate having a main surface of a non-polarity plane.A nitride-based semiconductor light-emitting device includes a nitride-based semiconductor crystal substrate and semiconductor stacked-layer structure of crystalline nitride-based semiconductor formed on a main surface of the substrate, wherein the semiconductor staked-layer structure includes an active layer sandwiched between an n-type layer and a p-type layer, the main surface of the substrate has a crystallographic plane tilted from a {10-10} plane of the nitride-based semiconductor crystal by an angle of more than −0.5° and less than −0.05° or more than +0.05° and less than +0.5° about a axis.
摘要翻译：旨在改善包括具有非极性平面的主表面的氮化物基半导体晶体基板的氮化物基半导体发光器件的操作特性。氮化物系半导体发光元件包括氮化物系半导体晶体基板和形成在基板的主面上的结晶性氮化物系半导体的半导体层叠结构，其中半导体淀积层结构包括夹层的活性层在n型层和p型层之间，衬底的主表面具有从氮化物类半导体晶体的{10-10}面倾斜大于-0.5°以下的角度的结晶面大于-0.05°或大于+ 0.05°且小于+0.5°。

3. 发明授权

US07462882B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07462882B2
公开(公告)日：2008-12-09
申请号：US10831659
申请日：2004-04-26
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L27/15
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

4. 发明申请

US20060202188A1 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
公开(公告)号：US20060202188A1
公开(公告)日：2006-09-14
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/109 , H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.

5. 发明授权

US08076165B2 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US08076165B2
公开(公告)日：2011-12-13
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

6. 发明授权

US07858992B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07858992B2
公开(公告)日：2010-12-28
申请号：US12366480
申请日：2009-02-05
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L29/04 , H01L29/06
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

7. 发明申请

US20090121320A1 Method of manufacturing p-type nitride semiconductor and semiconductor device fabricated by the method 有权
标题翻译：通过该方法制造p型氮化物半导体和半导体器件的方法
公开(公告)号：US20090121320A1
公开(公告)日：2009-05-14
申请号：US11887153
申请日：2006-03-02
申请人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
发明人： Yuhzoh Tsuda , Shigetoshi Ito , Mototaka Taneya , Yoshihiro Ueta , Teruyoshi Takakura
IPC分类号： H01L29/12 , H01L21/365
CPC分类号： H01S5/22 , B82Y20/00 , C23C16/34 , C23C16/4481 , H01L21/0254 , H01L21/02579 , H01L21/0262 , H01L33/007 , H01S5/0425 , H01S5/2009 , H01S5/305 , H01S5/3063 , H01S5/3211 , H01S5/34333 , H01S2304/04
摘要： The present invention includes a first step of forming a nitride semiconductor layer by metal organic chemical vapor deposition by using a first carrier gas containing a nitrogen carrier gas and a hydrogen carrier gas of a flow quantity larger than that of the nitrogen carrier gas to thereby supply a raw material containing Mg and a Group V raw material containing N, and a second step of lowering a temperature by using a second carrier gas to which a material containing N is added, and hence solves the problems.
摘要翻译：本发明包括通过使用含有氮载气的第一载气和流量大于氮载气的氢载气的金属有机化学气相沉积形成氮化物半导体层的第一步骤，由此供给含有Mg的原料和含有N的V族原料，以及通过使用添加了含有N的材料的第二载气来降低温度的第二步骤，因此解决了这些问题。

8. 发明授权

US07579627B2 Nitride semiconductor light-emitting device, method of fabricating it, and semiconductor optical apparatus 有权
标题翻译：氮化物半导体发光元件及其制造方法以及半导体光学装置
公开(公告)号：US07579627B2
公开(公告)日：2009-08-25
申请号：US11435932
申请日：2006-05-18
申请人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
发明人： Yoshihiro Ueta , Teruyoshi Takakura , Takeshi Kamikawa , Yuhzoh Tsuda , Shigetoshi Ito , Takayuki Yuasa , Mototaka Taneya , Kensaku Motoki
IPC分类号： H01L31/12
CPC分类号： B82Y20/00 , H01S5/0207 , H01S5/2201 , H01S5/3202 , H01S5/34333 , H01S2304/12
摘要： A nitride semiconductor laser device has a nitride semiconductor substrate that includes a dislocation-concentrated region 102 and a wide low-dislocation region and that has the top surface thereof slanted at an angle in the range of 0.3° to 0.7° relative to the C plane and a nitride semiconductor layer laid on top thereof. The nitride semiconductor layer has a depression immediately above the dislocation-concentrated region, and has, in a region thereof other than the depression, a high-quality quantum well active layer with good flatness and without cracks, a layer that, as is grown, readily exhibits p-type conductivity, and a stripe-shaped laser light waveguide region. The laser light waveguide region is formed above the low-dislocation region. This helps realize a nitride semiconductor laser device that offers a longer life.
摘要翻译：氮化物半导体激光器件具有氮化物半导体衬底，其包括位错集中区域102和宽低位错区域，并且其顶表面相对于C平面以0.3°至0.7°的范围内的角度倾斜和位于其顶部的氮化物半导体层。氮化物半导体层在位错集中区域正上方具有凹陷，并且在除了凹陷以外的区域中具有良好的平坦度且没有裂纹的高质量的量子阱活性层，易于显示p型导电性，以及条状激光波导区域。激光波导区域形成在低位错区域的上方。这有助于实现提供更长寿命的氮化物半导体激光器件。

9. 发明申请

US20080283866A1 Nitride semiconductor light-emitting device and method for producing same 有权
标题翻译：氮化物半导体发光器件及其制造方法
公开(公告)号：US20080283866A1
公开(公告)日：2008-11-20
申请号：US12216533
申请日：2008-07-07
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L33/00
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.
摘要翻译：在本发明的氮化物半导体发光元件的制造方法中，首先，准备形成有槽部的氮化物半导体基板。在包括沟槽部分的侧壁的氮化物半导体衬底上形成包括氮化物半导体的下层，使得下层在每个沟槽部分中具有晶体表面，并且晶体表面以相对于基板的表面为53.5°〜63.4°。在下层之上，形成由包含Al的下包层，有源层和含有Al的上包层组成的发光器件结构。根据本发明，在氮化物半导体衬底上堆积具有氮化物半导体的发光器件结构的层时发生的厚度不均匀性和表面平坦度不足，同时抑制裂纹的发生。

10. 发明授权

US07410819B2 Nitride semiconductor light-emitting device and method for producing same 有权
公开(公告)号：US07410819B2
公开(公告)日：2008-08-12
申请号：US11296532
申请日：2005-12-08
申请人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
发明人： Teruyoshi Takakura , Shigetoshi Ito , Takeshi Kamikawa
IPC分类号： H01L21/20
CPC分类号： H01S5/3202 , B82Y20/00 , H01L33/007 , H01S5/0202 , H01S5/0207 , H01S5/0211 , H01S5/0425 , H01S5/2201 , H01S5/2214 , H01S5/34333
摘要： In a method for producing a nitride semiconductor light-emitting device according to the present invention, first, a nitride semiconductor substrate having groove portions formed is prepared. An underlying layer comprising nitride semiconductor is formed on the nitride semiconductor substrate including the side walls of the groove portions, in such a manner that the underlying layer has a crystal surface in each of the groove portions and the crystal surface is tilted at an angle of from 53.5° to 63.4° with respect to the surface of the substrate. Over the underlying layer, a light-emitting-device structure composed of a lower cladding layer containing Al, an active layer, and an upper cladding layer containing Al is formed. According to the present invention, thickness nonuniformity and lack of surface flatness, which occur when accumulating a layer with light-emitting-device structure of nitride semiconductor over the nitride semiconductor substrate, are alleviated while inhibiting occurrence of cracking.

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