专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20070042119A1 Vaporizer for atomic layer deposition system 审中-公开
标题翻译：蒸发器用于原子层沉积系统
公开(公告)号：US20070042119A1
公开(公告)日：2007-02-22
申请号：US11351366
申请日：2006-02-10
申请人： Larry Matthysse , Xinye Liu , M. Karim , Thomas Seidel
发明人： Larry Matthysse , Xinye Liu , M. Karim , Thomas Seidel
IPC分类号： C23C16/00
CPC分类号： C23C16/4481 , C23C16/45525 , C23C16/45544
摘要： A multi-stage precursor vessel system for an atomic layer deposition (ALD) system in which a precursor is transferred from a first, low temperature reservoir chamber into a second (or subsequent) chamber at higher temperature, which second (or subsequent) chamber is used to create a highest possible vapor pressure of the precursor allowed by its temperature without decomposition in the timeframe of its residence therein.
摘要翻译：一种用于原子层沉积（ALD）系统的多级前体容器系统，其中前体在较高温度下从第一低温储存室转移到第二（或后续）室中，该第二（或后续）室是用于产生其温度允许的前体的最高可能的蒸汽压，而不会在其驻留的时间内分解。

2. 发明申请

US20050016453A1 Collection of unused precursors in ALD 审中-公开
标题翻译： ALD中未使用的前体的收集
公开(公告)号：US20050016453A1
公开(公告)日：2005-01-27
申请号：US10831456
申请日：2004-04-23
申请人： Thomas Seidel , Edward Lee , Kenneth Doering , Prasad Gadgil
发明人： Thomas Seidel , Edward Lee , Kenneth Doering , Prasad Gadgil
IPC分类号： C23C16/44 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4412 , C23C16/45525 , C23C16/45544
摘要： An ALD system includes an ALD reactor and a precursor trap coupled downstream of the ALD reactor via a valve assembly. The precursor trap is configured to collect unused chemical precursors after reactions in the ALD reactor.
摘要翻译： ALD系统包括ALD反应器和通过阀组件耦合在ALD反应器下游的前体捕集器。前体阱被配置成在ALD反应器中反应后收集未使用的化学前体。

3. 发明申请

US20050281949A1 Massively parallel atomic layer deposition/chemical vapor deposition system 审中-公开
标题翻译：大规模并行原子层沉积/化学气相沉积系统
公开(公告)号：US20050281949A1
公开(公告)日：2005-12-22
申请号：US11115053
申请日：2005-04-25
申请人： Thomas Seidel , Adrian Jansz , Jurek Puchacz , Ken Doering
发明人： Thomas Seidel , Adrian Jansz , Jurek Puchacz , Ken Doering
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45546 , C23C16/54
摘要： A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.
摘要翻译：用于使用单独垂直堆叠的ALD或CVD反应器的方法和装置。单个反应器是可独立操作和可维护的。气体入口和出口相对于反应室垂直配置，用于大致轴对称过程控制。腔室设计是模块化的，其中形成反应器的盖板和底板具有改进的流动设计。

4. 发明申请

US20050274323A1 Massively parallel atomic layer deposition/chemical vapor deposition system 审中-公开
公开(公告)号：US20050274323A1
公开(公告)日：2005-12-15
申请号：US11114313
申请日：2005-04-25
申请人： Thomas Seidel , Adrian Jansz , Jurek Puchacz , Ken Doering
发明人： Thomas Seidel , Adrian Jansz , Jurek Puchacz , Ken Doering
IPC分类号： C23C16/44 , C23C16/455 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45544 , C23C16/4412 , C23C16/45546 , C23C16/54
摘要： A method and apparatus for the use of individual vertically stacked ALD or CVD reactors. Individual reactors are independently operable and maintainable. The gas inlet and output are vertically configured with respect to the reactor chamber for generally axi-symmetric process control. The chamber design is modular in which cover and base plates forming the reactor have improved flow design.

5. 发明申请

US20050016956A1 Methods and apparatus for cycle time improvements for atomic layer deposition 审中-公开
标题翻译：用于原子层沉积的循环时间改进的方法和装置
公开(公告)号：US20050016956A1
公开(公告)日：2005-01-27
申请号：US10791030
申请日：2004-03-01
申请人： Xinye Liu , Thomas Seidel , Edward Lee , Ken Doering , Sasangan Ramanathan
发明人： Xinye Liu , Thomas Seidel , Edward Lee , Ken Doering , Sasangan Ramanathan
IPC分类号： C23C16/44 , C23C16/455 , C23F1/00 , C30B25/14
CPC分类号： C30B25/14 , C23C16/4412 , C23C16/45527 , C23C16/45544 , C23C16/45557
摘要： Different periods of an ALD cycle are performed using different purge flows and, in some cases, different pumping capacities, while maintaining the reactor chamber at a nominally constant pressure. The purge flows may, in some cases, utilize different gasses and/or may be provided through different flow paths. These operations provide for ALD cycle time improvements and economical operation with respect to consumables usage. In some embodiments the use of an annular throttle valve provides a means for controlling downstream flow limiting conductances in a gas flow path from the reactor chamber.
摘要翻译：不同的ALD循环周期使用不同的吹扫流程，并且在一些情况下，不同的泵送能力，同时将反应器室保持在标称恒定的压力下进行。在一些情况下，吹扫流可以利用不同的气体和/或可以通过不同的流动路径提供。这些操作提供ALD循环时间改进和耗材使用的经济运行。在一些实施例中，环形节流阀的使用提供了用于控制来自反应器室的气体流动路径中的下游流动限制电导的装置。

6. 发明申请

US20080072821A1 SMALL VOLUME SYMMETRIC FLOW SINGLE WAFER ALD APPARATUS 审中-公开
标题翻译：小容量对流流量单波形装置
公开(公告)号：US20080072821A1
公开(公告)日：2008-03-27
申请号：US11780698
申请日：2007-07-20
申请人： Jeremic Dalton , Martin Dauelsberg , Kenneth Doering , M. Karim , Thomas Seidel , Gerhard Strauch
发明人： Jeremic Dalton , Martin Dauelsberg , Kenneth Doering , M. Karim , Thomas Seidel , Gerhard Strauch
IPC分类号： C23C16/00
CPC分类号： C30B35/00 , C30B25/14
摘要： A reaction chamber apparatus includes a vertically movable heater-susceptor with an attached annular attached flow ring that performs as a gas conduit. The outlet port of the flow ring extends below the bottom of a wafer transport slot valve when the susceptor is in its process (higher) position, while the gas conduit formed by the flow ring has an external surface at its edge that isolates the outer space of the reactor above the wafer from the confined reaction space. In some cases, the outer edge of the gas conduit is in proximity to a ring attached to the reactor lid and, together, the ring and conduit act as a tongue-in-groove (TIG) configuration. In some cases, the TIG design may have a staircase contour, thereby limiting diffusion-backflow of downstream gases to the outer space of the reactor.
摘要翻译：反应室装置包括可垂直移动的加热器基座，其具有作为气体导管执行的附接的环形附接流动环。当基座处于（更高）位置时，流动环的出口延伸到晶片运输槽阀的底部的下方，而由流动环形成的气体导管在其边缘处具有隔离外部空间的外表面的反应器从受限制的反应空间移动到晶片上方。在一些情况下，气体导管的外边缘靠近附接到反应器盖的环，并且环和导管一起作为榫槽（TIG）构造。在某些情况下，TIG设计可能具有阶梯轮廓，从而限制下游气体向反应器外部空间的扩散回流。

7. 发明申请

US20060137609A1 Multi-single wafer processing apparatus 审中-公开
标题翻译：多单晶圆处理装置
公开(公告)号：US20060137609A1
公开(公告)日：2006-06-29
申请号：US11224767
申请日：2005-09-12
申请人： Jerzy Puchacz , Sasangan Ramanathan , Manolito Reyes , Thomas Seidel
发明人： Jerzy Puchacz , Sasangan Ramanathan , Manolito Reyes , Thomas Seidel
IPC分类号： C23C16/00
CPC分类号： H01L21/67167 , H01L21/6719
摘要： A wafer processing apparatus includes one or more processing modules, each having multiple, distinct, single-wafer processing reactors configured for semi-independent ALD and/or CVD film deposition therein; a robotic central wafer handler configured to provide wafers to and accept wafers from each of said wafer processing modules; and a single-wafer loading and unloading mechanism that includes a loading and unloading port and a mini-environment coupling the loading and unloading port to the robotic central wafer handler. The wafer processing reactors may be arranged (i) along axes of a Cartesian coordinate system, or (ii) in quadrants defined by said axes, one axis being parallel to a wafer input plane of the at least one of the process modules to which the single-wafer processing reactors belong. Each processing module can include up to four single-wafer processing reactors, each with an independent gas distribution module.
摘要翻译：晶片处理装置包括一个或多个处理模块，每个处理模块具有多个，不同的单晶片处理反应器，其被配置用于半独立的ALD和/或CVD膜沉积; 机器人中央晶片处理器，被配置为向每个所述晶片处理模块提供晶片并接受晶片; 以及单晶片加载和卸载机构，其包括装载和卸载端口以及将加载和卸载端口耦合到机器人中央晶片处理器的小型环境。晶圆处理反应器可以沿着笛卡尔坐标系的轴线布置，或者（ii）在由所述轴限定的象限中，一个轴平行于至少一个工艺模块的晶片输入平面，单晶圆加工反应堆属于每个处理模块可以包括多达四个单晶圆处理反应器，每个具有独立的气体分配模块。

8. 发明授权

US06502605B2 Process for the production of a face-to-face carpet fabric 有权
标题翻译：用于生产面对面地毯织物的方法
公开(公告)号：US06502605B2
公开(公告)日：2003-01-07
申请号：US09903067
申请日：2001-07-11
申请人： Rainer Goessl , Thomas Seidel
发明人： Rainer Goessl , Thomas Seidel
IPC分类号： D03D2710
CPC分类号： D03D27/10
摘要： A process for the production of a face-to-face carpet fabric on a double pile loom having at least two filling insertion planes, uses filling yarns, stuffer warp yarns, and chain warp yarns to form two back cloths. The filling yarns are inserted into each back cloth as back fillings and inner fillings. Groups of chain warp yarns, individual yarns of which between their respective last binding to an inner filling and the succeeding last binding to a back filling form a holding length, are assigned to each back cloth. All patterning pile loops are stretched over back fillings. and the pattern repeat of a group of chain warp yarns is selected to be greater than six. The holding lengths of a chain warp yarn extend over at least three filling insertion cycles.
摘要翻译：在具有至少两个填充插入面的双层织布机上生产面对面地毯织物的方法，使用填充纱线，填充经纱和链经纱以形成两个后布。将填充纱线作为背面填充物和内部填充物插入每个背布中。一组链经纱，其各自的最后装订与内部填充物之间的单独纱线以及后续最后一次装订到背部填充形式的保持长度的组分配给每个背布。所有图案绒毛圈都在背面填充物上拉伸。一组链经纱的图案重复选择为大于6。链经纱的保持长度延伸至少三个填充插入周期。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式