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    • 6. 发明申请
    • DUAL-GATE TRANSISTORS
    • 双门极晶体管
    • WO2005098959A3
    • 2006-04-27
    • PCT/GB2005001309
    • 2005-04-05
    • UNIV CAMBRIDGE TECHCHUA LAY-LAYHO PETER KIAN HOONFRIEND RICHARD HENRY
    • CHUA LAY-LAYHO PETER KIAN HOONFRIEND RICHARD HENRY
    • H01L51/10H01L27/28H01L29/00
    • H01L51/0508H01L27/283H01L51/0512H01L51/0554
    • A field Effect transistor device comprising: a source electrode (13 or 14); a drain electrode (13 or 14); a semiconductive region comprising an organic semiconductor material and defining a channel (12) of the device between the source electrode and the drain electrode; a first gate structure comprising a first gate electrode (10 or 16) and a first dielectric region (11 or 15) located between the first gate electrode and the semiconductive region; and a second gate structure comprising a second gate electrode (10 or 16) and a second dielectric region (11 or 15) located between the second gate electrode and the semiconductive region; whereby the conductance of the semiconductor region in the channel can be influenced by potentials applied separately or to both the first gate electrode and the second gate electrode.
    • 场效应晶体管器件,包括:源电极(13或14); 漏电极(13或14); 半导体区域,包括有机半导体材料并且限定在所述源电极和所述漏电极之间的所述器件的沟道(12); 第一栅极结构,包括位于第一栅极电极和半导体区域之间的第一栅电极(10或16)和第一介电区域(11或15) 以及第二栅极结构,包括位于所述第二栅电极和所述半导体区之间的第二栅电极(10或16)和第二电介质区(11或15) 由此沟道中的半导体区域的电导可以受单独施加的电位或第一栅极电极和第二栅极电极的影响。