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1. 发明授权

US09590617B2 Semiconductor device, and inverter, converter and power conversion device employing the same 有权
标题翻译：半导体装置，逆变器，转换器和采用该装置的电力转换装置
公开(公告)号：US09590617B2
公开(公告)日：2017-03-07
申请号：US14110687
申请日：2012-04-05
申请人： Kenji Komiya , Shuji Wakaiki , Kohtaroh Kataoka , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
发明人： Kenji Komiya , Shuji Wakaiki , Kohtaroh Kataoka , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
IPC分类号： H03K17/30 , H03K17/10 , H03K17/14 , H03K17/12 , H02M3/158 , H02M1/088
CPC分类号： H03K17/302 , H02M1/088 , H02M3/158 , H03K17/102 , H03K17/122 , H03K17/145
摘要： A semiconductor device includes a high breakdown voltage, high Gm first transistor and a low breakdown voltage, low Gm second transistor connected in series between first and second nodes, and a low breakdown voltage, high Gm third transistor connected to the second transistor in parallel. When the second transistor is turned on, the first transistor turns on, and furthermore, when the third transistor is turned on, an electrically conducting state is established between the first and second nodes. The second, low breakdown voltage transistor is turned on to turn on the first, high breakdown voltage transistor, and a turn-on time with only limited variation can be achieved.
摘要翻译：半导体器件包括高击穿电压，高Gm第一晶体管和低击穿电压，串联连接在第一和第二节点之间的低Gm第二晶体管和低击穿电压，并联连接到第二晶体管的高Gm第三晶体管。当第二晶体管导通时，第一晶体管导通，此外，当第三晶体管导通时，在第一和第二节点之间建立导电状态。第二个低击穿电压晶体管导通，以接通第一个高耐压晶体管，并且可以实现只有有限变化的导通时间。

2. 发明授权

US09079501B2 Vehicle driving device, vehicle charging system, and automobile 有权
标题翻译：车辆驱动装置，车辆充电系统和汽车
公开(公告)号：US09079501B2
公开(公告)日：2015-07-14
申请号：US13595661
申请日：2012-08-27
申请人： Kenji Komiya , Akihide Shibata , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
发明人： Kenji Komiya , Akihide Shibata , Masaru Nomura , Yoshiji Ohta , Hiroshi Iwata
IPC分类号： G05D1/00 , B60L1/00 , B60L1/06 , B60L1/16 , B60L3/00 , B60L3/04 , B60L8/00 , B60L11/18 , B60L15/00
CPC分类号： B60L1/003 , B60L1/06 , B60L1/16 , B60L3/0046 , B60L3/04 , B60L8/003 , B60L11/1859 , B60L11/1868 , B60L15/007 , B60L2200/26 , B60L2210/10 , B60L2240/34 , B60L2240/36 , B60L2240/547 , B60L2240/549 , Y02T10/645 , Y02T10/7005 , Y02T10/7011 , Y02T10/7066 , Y02T10/7083 , Y02T10/7216 , Y02T90/16
摘要： A vehicle driving device is arranged such that in accordance with an instruction signal from the outside, a first battery managing section outputs, to the outside, a signal related to charging/discharging control for a first battery.
摘要翻译：车辆驱动装置被布置成使得根据来自外部的指令信号，第一电池管理部分向外部输出与第一电池的充电/放电控制相关的信号。

3. 发明授权

US09071154B2 DC-DC converter, solar charging system, and movable body 有权
标题翻译： DC-DC转换器，太阳能充电系统和移动体
公开(公告)号：US09071154B2
公开(公告)日：2015-06-30
申请号：US13665382
申请日：2012-10-31
申请人： Hiroshi Iwata , Yoshifumi Yaoi , Kenji Komiya , Masaru Nomura , Yoshiji Ohta
发明人： Hiroshi Iwata , Yoshifumi Yaoi , Kenji Komiya , Masaru Nomura , Yoshiji Ohta
IPC分类号： H01M10/44 , H02J7/04 , H02J1/00 , H02J1/10 , H01L31/042 , H02M7/5383 , H02M3/335 , H02M3/24 , H02J7/02 , H02M7/30 , H02J7/00 , B60L8/00 , B60L11/18
CPC分类号： H02M3/3353 , B60L8/003 , B60L11/1868 , B60L2210/12 , B60L2210/14 , B60L2240/526 , B60L2240/527 , H02J7/0054 , H02J7/022 , H02J2007/0059 , H02M7/30 , Y02T10/7005 , Y02T10/7066 , Y02T10/7083 , Y02T10/7225 , Y02T10/7233
摘要： This DC/DC converter includes a first DC/DC converter, and a second DC/DC converter for carrying out a DC/DC conversion of voltage supplied from the first DC/DC converter. One of either the first DC/DC converter or the second DC/DC converter is a fixed-factor DC/DC converter, and the other of either the first DC/DC converter or the second DC/DC converter is a variable-factor DC/DC converter.
摘要翻译：该DC / DC转换器包括第一DC / DC转换器和用于对从第一DC / DC转换器提供的电压进行DC / DC转换的第二DC / DC转换器。第一DC / DC转换器或第二DC / DC转换器之一是固定因数DC / DC转换器，第一DC / DC转换器或第二DC / DC转换器中的另一个是可变因数DC / DC转换器。

4. 发明授权

US08450713B2 Nonvolatile semiconductor memory device and manufacturing method for same 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08450713B2
公开(公告)日：2013-05-28
申请号：US12713223
申请日：2010-02-26
申请人： Nobuyoshi Awaya , Yoshiji Ohta , Yoshiaki Tabuchi
发明人： Nobuyoshi Awaya , Yoshiji Ohta , Yoshiaki Tabuchi
IPC分类号： H01L45/00 , H01L21/822
CPC分类号： H01L27/249 , G11C13/0007 , G11C2013/0083 , G11C2213/32 , G11C2213/34 , G11C2213/71 , G11C2213/72 , G11C2213/77 , H01L27/0688 , H01L27/101 , H01L27/2409 , H01L27/2418 , H01L27/2436 , H01L27/2454 , H01L45/08 , H01L45/1226 , H01L45/146 , H01L45/1616
摘要： A three-dimensional memory cell array of memory cells with two terminals having a variable resistive element is formed such that: one ends of memory cells adjacent in Z direction are connected to one of middle selection lines extending in Z direction aligned in X and Y directions; the other ends of the memory cells located at the same point in Z direction are connected to one of third selection lines aligned in Z direction; a two-dimensional array where selection transistors are aligned in X and Y directions is adjacent to the memory cell array in Z direction; gates of selection transistors adjacent in X direction, drains of selection transistors adjacent in Y direction and sources of selection transistors are connected to same first selection line, second selection line, and different middle selection lines, respectively; and first, second and third selection lines are connected to X, Y and Z decoders, respectively.
摘要翻译：具有两个具有可变电阻元件的端子的存储单元的三维存储单元阵列被形成为：在Z方向上相邻的存储单元的一端连接到沿Z方向延伸的中间选择线之一，在X和Y方向上对齐 ; 位于Z方向相同点的存储单元的另一端连接到在Z方向上排列的第三选择线之一; 选择晶体管在X和Y方向上排列的二维阵列与Z方向上的存储单元阵列相邻; 在X方向上相邻的选择晶体管的栅极，在Y方向相邻的选择晶体管的漏极和选择晶体管的源极分别连接到相同的第一选择线，第二选择线和不同的中间选择线; 并且第一，第二和第三选择线分别连接到X，Y和Z解码器。

5. 发明授权

US08422270B2 Nonvolatile semiconductor memory device 有权
标题翻译：非易失性半导体存储器件
公开(公告)号：US08422270B2
公开(公告)日：2013-04-16
申请号：US13044892
申请日：2011-03-10
申请人： Suguru Kawabata , Shinobu Yamazaki , Yoshiji Ohta , Kazuya Ishihara , Nobuyoshi Awaya , Akio Kitagawa , Kazuya Nakayama
发明人： Suguru Kawabata , Shinobu Yamazaki , Yoshiji Ohta , Kazuya Ishihara , Nobuyoshi Awaya , Akio Kitagawa , Kazuya Nakayama
IPC分类号： G11C11/34
CPC分类号： G11C13/004 , G11C2013/0045 , G11C2213/71 , G11C2213/72 , G11C2213/77
摘要： A nonvolatile semiconductor memory device includes a bit voltage adjusting circuit which, for each bit line, fixes potentials of a selected bit line and a non-selected bit line to a predetermined potential to perform a memory operation and a data voltage adjusting circuit which, for each data line, fixes potentials of a selected data line and a non-selected data line to a predetermined potential to perform a memory operation. Each of the voltage adjusting circuits includes an operational amplifier and a transistor, a voltage required for a memory operation is input to the non-inverted input terminal of the operational amplifier, and the inverted input terminal of the operational amplifier is connected to the bit line or the data line, so that the potential of the bit line or the data line is fixed to a potential of the non-inverted input terminal of the operational amplifier.
摘要翻译：非易失性半导体存储器件包括：位电压调整电路，对于每个位线，将选定位线和非选定位线的电位固定到预定电位以执行存储器操作，以及数据电压调整电路，每个数据线将所选数据线和未选择的数据线的电位固定到预定电位以执行存储器操作。每个电压调节电路包括运算放大器和晶体管，将存储器操作所需的电压输入到运算放大器的非反相输入端，运算放大器的反相输入端连接到位线或数据线，使得位线或数据线的电位固定为运算放大器的非反相输入端的电位。

6. 发明申请

US20130068277A1 PHOTOVOLTAIC MODULE AND PHOTOVOLTAIC MODULE ARRAY 审中-公开
标题翻译：光伏模块和光伏模块阵列
公开(公告)号：US20130068277A1
公开(公告)日：2013-03-21
申请号：US13588562
申请日：2012-08-17
申请人： Kohtaroh KATAOKA , Kohichiroh ADACHI , Masatomi HARADA , Yoshiji OHTA , Hiroshi IWATA , Shinpei HIGASHIDA
发明人： Kohtaroh KATAOKA , Kohichiroh ADACHI , Masatomi HARADA , Yoshiji OHTA , Hiroshi IWATA , Shinpei HIGASHIDA
IPC分类号： H01L31/05
CPC分类号： H01L31/0504 , H01L31/02021 , Y02E10/50
摘要： A photovoltaic module of the present invention includes a cluster power generation unit in which multiple photovoltaic elements are connected in series via connection points, a pair of output terminals connected to respective ends of a series circuit formed by the cluster power generation unit, and a specified terminal connected to a specified connection point that is specified from among the connection points.
摘要翻译：本发明的光电模块包括：多个光电元件经由连接点串联连接的一组输出端子，和由集群发电单元形成的串联电路的各端连接的一对输出端子的集群发电单元，终端连接到从连接点指定的指定连接点。

7. 发明授权

US08210470B2 Moving apparatus 有权
标题翻译：移动装置
公开(公告)号：US08210470B2
公开(公告)日：2012-07-03
申请号：US11166743
申请日：2005-06-23
申请人： Yoshiji Ohta , Keita Hara , Masaki Hamamoto
发明人： Yoshiji Ohta , Keita Hara , Masaki Hamamoto
IPC分类号： B64C33/02
CPC分类号： B64C33/00
摘要： In a moving apparatus, flapping angle of a front wing shaft is γ+Δγ/2, and the flapping angle of rear wing shaft is γ−Δγ/2. Specifically, amplitude difference between front wing shaft and rear wing shaft is Δγ. Further, the flapping motion of front wing shaft is represented by sin (τ+φ/2), and the flapping motion of rear wing shaft is represented by sin (τ−φ/2). In other words, phase difference between the front and rear wing shafts is φ. Further, amplitude difference Δγ and phase difference φ are each represented by a function using a common parameter. Therefore, a control portion can independently change the amplitude difference Δγ and phase difference φ, so as to variously change a torsion angle formed by a tip end portion of the wing and a prescribed phantom plane. Thus, a moving apparatus that can make an efficient transition from hovering to forward or backward flight can be provided.
摘要翻译：在移动装置中，前翼轴的拍击角为γ+＆Dgr;γ/ 2，后翼轴的拍打角为γ＆Dgr;γ/ 2。具体来说，前翼轴和后翼轴之间的振幅差为＆Dgr;γ。此外，前翼轴的拍击运动由sin（τ+＆phgr; / 2）表示，后翼轴的扑动运动由sin（τ-＆phgr; / 2）表示。换句话说，前翼和后翼轴之间的相位差是＆phgr。此外，振幅差Dgr;γ和相位差各自由使用公共参数的函数表示。因此，控制部分可以独立地改变振幅差Dgrγ和相位差phgr，以便不同地改变由翼的末端部分形成的扭转角和规定的幻影平面。因此，可以提供可以从盘旋到向前或向后飞行的有效过渡的移动装置。

8. 发明授权

US07978515B2 Semiconductor storage device and electronic equipment therefor 有权
标题翻译：半导体存储装置及其电子设备
公开(公告)号：US07978515B2
公开(公告)日：2011-07-12
申请号：US12052335
申请日：2008-03-20
申请人： Hiroshi Iwata , Yoshiji Ohta
发明人： Hiroshi Iwata , Yoshiji Ohta
IPC分类号： G11C11/34
CPC分类号： G11C16/26
摘要： A semiconductor storage device includes a first memory cell for storing two kinds of states, a second memory cell for storing two kinds of states, and a sense amplifier for detecting a potential difference between voltages equivalent to readout currents of the first and second memory cells, respectively. Either one of information data “0” or data “1”, which is stored in combination of the first and second memory cells, is read out by detecting the potential difference equivalent to the readout current difference between the first and second memory cells.
摘要翻译：半导体存储装置包括用于存储两种状态的第一存储单元，用于存储两种状态的第二存储单元和用于检测与第一和第二存储单元的读出电流相当的电压之间的电位差的读出放大器，分别。通过检测与第一和第二存储单元之间的读出电流差相当的电位差来读出存储在第一和第二存储单元组合中的信息数据“0”或数据“1”中的任何一个。

9. 发明申请

US20100118592A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF CONTROLLING THE SAME 有权
标题翻译：非易失性半导体存储器件及其控制方法
公开(公告)号：US20100118592A1
公开(公告)日：2010-05-13
申请号：US12611279
申请日：2009-11-03
申请人： Kazuya Ishihara , Yutaka Ishikawa , Yoshiji Ohta
发明人： Kazuya Ishihara , Yutaka Ishikawa , Yoshiji Ohta
IPC分类号： G11C11/00 , G11C8/00 , G11C7/00
CPC分类号： G11C8/12 , G11C8/18 , G11C13/0007 , G11C13/0023 , G11C13/0026 , G11C13/0028 , G11C13/0064 , G11C13/0069 , G11C2213/32 , G11C2216/22
摘要： Provided is a nonvolatile semiconductor memory device capable of performing a writing action for a memory cell at high speed. The device comprises: a memory cell array having a first sub-bank and a second sub-bank each having a plurality of nonvolatile memory cells arranged in a form of a matrix; a row decoder shared by the first sub-bank and the second sub-bank; a first column decoder and a second column decoder provided in the first sub-bank and the second sub-bank, respectively; and a control circuit arranged to execute alternately a first action cycle to perform a programming action in the first sub-bank and a reading action for a programming verifying action in the second sub-bank and a second action cycle to perform the reading action for the programming verifying action in the first sub-bank and the programming action in the second sub-bank.
摘要翻译：提供了一种能够高速地对存储单元执行写入动作的非易失性半导体存储器件。该装置包括：具有第一子库和第二子库的存储单元阵列，每个具有以矩阵形式布置的多个非易失性存储单元; 由第一子银行和第二子银行共享的行解码器; 分别设置在第一子行和第二子行中的第一列解码器和第二列解码器; 以及控制电路，被配置为交替地执行第一动作循环以在第一子存储体中执行编程动作，以及执行用于第二子存储体中的编程验证动作的读取动作和第二动作循环，以执行对于第二子存储体的读取动作在第一子行中编程验证动作和第二子行中的编程动作。

10. 发明授权

US07584084B2 Method of manufacturing fluttering robot using a fluid-structure interactive numerical model for developing controls for wing driving apparatus 有权
标题翻译：使用流体结构交互数字模型制造飞行机器人的方法，用于开发翼驱动装置的控制
公开(公告)号：US07584084B2
公开(公告)日：2009-09-01
申请号：US10299947
申请日：2002-11-19
申请人： Masaki Hamamoto , Yoshiji Ohta , Keita Hara , Toshiaki Hisada
发明人： Masaki Hamamoto , Yoshiji Ohta , Keita Hara , Toshiaki Hisada
IPC分类号： G06G7/60 , G06G7/72 , G05B13/04 , G05B19/18 , G09B9/05 , G09B9/10
CPC分类号： G06F17/5018 , G06F2217/12 , G06F2217/16
摘要： A numerical model related to fluttering of an insect, when an equivalent model of actual structure of a wing of the insect is moved in the air in accordance with a model of fluttering motion of the wing of the insect is calculated by fluid-structure interactive analysis, in which behavior of the wing and behavior of the air are given as numerical values, including interaction therebetween. Thereafter, a method of controlling a fluttering robot, wing shape and the like are determined by modifying numerical models of fluttering of an insect prepared by fluid-structure interactive analysis, in accordance with sensitivity analysis. Accordingly, a method of preparing numerical models of wing and air considering the behavior of the wing of the insect in the air is provided and, in addition, a method of manufacturing a fluttering robot utilizing the numerical model prepared by this method of preparing numerical model can be provided.
摘要翻译：与昆虫飘动相关的数值模型，当昆虫翼翼的实际结构的等效模型根据昆虫翼的飘动运动的模式在空中移动时，通过流体结构相互作用分析计算，其中机翼的行为和空气的行为被给予为数值，包括它们之间的相互作用。此后，根据灵敏度分析，通过修改通过流体 - 结构相互作用分析制备的昆虫振动的数值模型来确定控制飘动机器人，翼形等的方法。因此，提出了考虑到昆虫在空气中的机翼的行为的机翼和空气的数值模型的制备方法，此外，还提供了一种使用通过这种制备数值模型的方法制备的数值模型来制造振动机器人的方法可以提供。

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