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1. 发明授权

US06515073B2 Anti-reflective coating-forming composition 失效
标题翻译：防反射涂层组合物
公开(公告)号：US06515073B2
公开(公告)日：2003-02-04
申请号：US09817077
申请日：2001-03-26
申请人： Yoshinori Sakamoto , Katsumi Omori , Yoshio Hagiwara
发明人： Yoshinori Sakamoto , Katsumi Omori , Yoshio Hagiwara
IPC分类号： C08G7718
CPC分类号： C08F8/42
摘要： An anti-reflective coating-forming composition comprising: (A) at least one compound selected from the group consisting of (i) a compound represented by the following formula (1): Si(OR1)a(OR2)b(OR3)c(OR4)d (1) (ii) a compound represented by the following formula (2): R5Si(OR6)e(OR7)f(OR8)g (2) and (iii) a compound represented by the following formula (3): R9R10Si(OR11)h(OR12)I (3) and (B) a thermosetting resin which can be condensed to said component (A) and has an absorption capacity with respect to exposing light.
摘要翻译：一种抗反射涂层组合物，其包含：（A）至少一种选自（i）由下式（1）表示的化合物的化合物：（ii）由下式（2）表示的化合物：和（iii）由下式（3）表示的化合物：和（B）可以与所述组分（A）冷凝并具有相对于曝光的吸收能力的热固性树脂。

2. 发明授权

US06338868B1 Method for the formation of a siliceous coating film 有权
标题翻译：形成硅质涂膜的方法
公开(公告)号：US06338868B1
公开(公告)日：2002-01-15
申请号：US09733948
申请日：2000-12-12
申请人： Tatsuhiko Shibuya , Yoshio Hagiwara
发明人： Tatsuhiko Shibuya , Yoshio Hagiwara
IPC分类号： B05D302
CPC分类号： H01L21/3125 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1283 , H01L21/02126 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , Y10T428/12556
摘要： Disclosed is a method for the formation of a silica coating film having a remarkably high crack-forming thickness limit on the surface of a substrate which may be highly heat resistant, for example, having a circuit wiring layer of polycrystalline silicon to withstand a temperature higher than 500° C. without excessive diffusion of dopant through the source layer or drain layer of the semiconductor device. The method comprises the steps of: coating the substrate surface with a coating solution containing a modified polysilazane which is a reaction product of a polysilazane and a dialkyl alkanol amine, drying the coating layer, subjecting the coating layer to a first baking treatment at 350-450° C. for 10-60 minutes and subjecting the layer to a second baking treatment at 550-800° C. for 0.5-60 minutes.
摘要翻译：公开了一种形成二氧化硅涂膜的方法，该二氧化硅涂膜在基板的表面上具有非常高的耐龟裂性的极高的耐热性，例如具有多晶硅的电路布线层以承受更高的温度超过500℃，没有掺杂剂过度扩散通过半导体器件的源极层或漏极层。该方法包括以下步骤：用含有聚硅氮烷（聚硅氮烷和二烷基链烷醇胺的反应产物）的改性聚硅氮烷的涂布溶液涂布基材表面，干燥该涂层，在350℃下进行第一次烘烤处理， 450℃10-60分钟，并在550-800℃下对该层进行第二次烘烤处理0.5-60分钟。

3. 发明授权

US5614271A Method for the formation of a silica-based coating film 失效
标题翻译：形成二氧化硅基涂膜的方法
公开(公告)号：US5614271A
公开(公告)日：1997-03-25
申请号：US692187
申请日：1996-08-05
申请人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Tatsuhiko Shibuya , Susumu Okano , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D3/06 , B05D7/00 , B05D7/24 , C04B41/50 , C09D183/00 , C09D183/16 , C23C18/12 , C23C18/14 , H01L21/316 , B29C71/02
CPC分类号： H01L21/316 , C04B41/5035 , C09D183/16 , C23C18/1212 , C23C18/122 , C23C18/1279 , C23C18/1283 , C23C18/1295 , C23C18/14 , C04B2111/00844
摘要： Proposed is an improved method for the formation of a silica-based coating film on the surface of a substrate such as a silicon wafer in the manufacture of semiconductor devices by coating the substrate surface with a polysilazane-containing coating solution followed by conversion of the coating layer of polysilazane into a silica-based coating film. The method comprises drying the coating layer of the polysilazane according to a heating schedule at a specified heating rate with continuous or stepwise increase of the temperature up to 240.degree. to 350.degree. C. followed by an irradiation treatment with far ultraviolet light at a temperature of 240.degree. to 350.degree. C. and then by a baking treatment at 350.degree. to 800.degree. C.
摘要翻译：提出了在半导体器件的制造中在硅晶片等基板的表面上形成二氧化硅类涂膜的改进方法，其中通过用含聚硅氮烷的涂布溶液涂布基板表面，随后将涂层转化聚硅氮烷层形成二氧化硅基涂膜。该方法包括以规定的加热速度按照加热方案干燥聚硅氮烷的涂层，连续或逐步升高温度至240℃至350℃，然后在远紫外光的温度下进行辐射处理 240℃至350℃，然后在350℃至800℃下进行烘烤处理。

4. 发明授权

US4155762A Liquid developer for binary diazo copying materials 失效
标题翻译：双重复印材料的液体显影剂
公开(公告)号：US4155762A
公开(公告)日：1979-05-22
申请号：US900411
申请日：1978-04-27
申请人： Tsutomu Matsuda , Yoshio Hagiwara , Yoichi Arai , Takeo Hirabayashi
发明人： Tsutomu Matsuda , Yoshio Hagiwara , Yoichi Arai , Takeo Hirabayashi
IPC分类号： G03C5/18 , G03C1/58 , G03C1/52 , G03C1/64
CPC分类号： G03C5/18
摘要： A liquid developer for use in developing binary diazo copying materials which consists essentially of an alkali metal salt of an aminoacid and/or an alkaline earth metal salt of an aminoacid.
摘要翻译：用于开发二元重氮复制材料的液体显影剂，其基本上由氨基酸的碱金属盐和/或氨基酸的碱土金属盐组成。

5. 发明授权

US07135064B2 Silica-based coating film on substrate and coating solution therefor 有权
标题翻译：二氧化硅基涂料及其涂料溶液
公开(公告)号：US07135064B2
公开(公告)日：2006-11-14
申请号：US11067622
申请日：2005-02-28
申请人： Tatsuhiko Shibuya , Yoshio Hagiwara
发明人： Tatsuhiko Shibuya , Yoshio Hagiwara
IPC分类号： C09D183/06
CPC分类号： H01L21/31051 , C08G77/02 , C08G77/06 , C08G77/32 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
摘要： A silica-based coating film having a low dielectric constant not exceeding 2.5 can be formed on the surface of a substrate to serve as a planarizing layer or an interlayer insulating layer by coating the surface with a unique coating solution containing a hydrolysis-condensation product of a polyalkoxy silane compound such as tetraethoxy silane and monomethyl trimethoxy silane, which is formed by the hydrolysis of a polyalkoxy silane in the presence of a basic catalyst such as ammonia in an alcohol solvent in a relatively low concentration followed by replacement of the alcohol solvent with an aprotic polar solvent such as N-methyl pyrrolidone, followed by drying and baking at 350 to 800° C.
摘要翻译：可以在基板的表面上形成具有低于2.5的低介电常数的二氧化硅基涂膜，以作为平面化层或层间绝缘层，通过用含有水解缩合产物聚烷氧基硅烷化合物，例如四乙氧基硅烷和单甲基三甲氧基硅烷，其通过在碱性催化剂如氨的存在下在醇溶剂中以相对低的浓度水解而形成，随后用醇溶剂置换，非质子极性溶剂如N-甲基吡咯烷酮，然后在350至800℃下干燥和烘烤。

6. 发明申请

US20050110149A1 Semiconductor multilayer wiring board and method of forming the same 失效
标题翻译：半导体多层线路板及其形成方法
公开(公告)号：US20050110149A1
公开(公告)日：2005-05-26
申请号：US10965868
申请日：2004-10-18
申请人： Tetsuya Osaka , Tokihiko Yokoshima , Isao Sato , Akira Hashimoto , Yoshio Hagiwara
发明人： Tetsuya Osaka , Tokihiko Yokoshima , Isao Sato , Akira Hashimoto , Yoshio Hagiwara
IPC分类号： C23C18/16 , C23C18/20 , C23C18/40 , C25D7/12 , H01L21/316 , H01L21/3205 , H01L21/4763 , H01L21/768 , H01L23/52 , H05K3/38 , H05K3/46
CPC分类号： H01L21/76843 , H01L21/76801 , H01L21/76808 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L21/76855 , H01L21/76864 , H01L21/76874 , H05K3/389 , H05K3/465 , Y10T29/49155
摘要： A silica-based interlayer insulating layer having a low dielectric constant is formed with SOG material on a substrate, in which a wiring-layer forming space is then formed. If necessary, a UV ray irradiation is performed under an oxidizing atmosphere. A Si—OH bond is formed on a surface of the insulating layer. A monomolecular layer film is then adhered to the inner surface of the space, which is then modified to be a catalyst with a solution containing Pd compound. On the catalyst monomolecular layer, a copper-diffusion-resistant film is formed by electroless plating, on which a copper plate is then formed as a wiring layer.
摘要翻译：在基板上用SOG材料形成具有低介电常数的二氧化硅基层间绝缘层，然后形成布线层形成空间。如果需要，在氧化气氛下进行紫外线照射。在绝缘层的表面上形成Si-OH键。然后将单分子层膜粘合到空间的内表面，然后将其用含有Pd化合物的溶液改性为催化剂。在催化剂单分子层上，通过化学镀形成铜扩散膜，然后在其上形成铜板作为布线层。

7. 发明授权

US06875262B1 Silica-based coating film on substrate and coating solution therefor 有权
标题翻译：二氧化硅基涂料及其涂料溶液
公开(公告)号：US06875262B1
公开(公告)日：2005-04-05
申请号：US09302471
申请日：1999-04-30
申请人： Tatsuhiko Shibuya , Yoshio Hagiwara
发明人： Tatsuhiko Shibuya , Yoshio Hagiwara
IPC分类号： B32B25/20 , C08G77/02 , C08G77/06 , C08G77/32 , C09D183/02 , C09D183/04 , H01B1/00 , H01B3/00 , H01L21/3105 , H01L21/312 , H01L21/316 , H01I21/00
CPC分类号： H01L21/31051 , C08G77/02 , C08G77/06 , C08G77/32 , C09D183/02 , C09D183/04 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3122 , H01L21/316 , Y10T428/31663
摘要： A silica-based coating film having a low dielectric constant not exceeding 2.5 can be formed on the surface of a substrate to serve as a planarizing layer or an interlayer insulating layer by coating the surface with a unique coating solution containing a hydrolysis-condensation product of a polyalkoxy silane compound such as tetraethoxy silane and monomethyl trimethoxy silane, which is formed by the hydrolysis of a polyalkoxy silane in the presence of a basic catalyst such as ammonia in an alcohol solvent in a relatively low concentration followed by replacement of the alcohol solvent with an aprotic polar solvent such as N-methyl pyrrolidone, followed by drying and baking at 350 to 800° C.
摘要翻译：可以在基板的表面上形成具有低于2.5的低介电常数的二氧化硅基涂膜，以作为平面化层或层间绝缘层，通过用含有水解缩合产物聚烷氧基硅烷化合物，例如四乙氧基硅烷和单甲基三甲氧基硅烷，其通过在碱性催化剂如氨的存在下在醇溶剂中以相对低的浓度水解而形成，随后用醇溶剂置换，非质子极性溶剂如N-甲基吡咯烷酮，然后在350至800℃下干燥和烘烤。

8. 发明授权

US06503825B1 Method for forming multi-layer wiring structure 失效
标题翻译：多层布线结构形成方法
公开(公告)号：US06503825B1
公开(公告)日：2003-01-07
申请号：US09024250
申请日：1998-02-17
申请人： Hiroyuki Iida , Kazuto Ohbuchi , Atsushi Matsushita , Yoshio Hagiwara
发明人： Hiroyuki Iida , Kazuto Ohbuchi , Atsushi Matsushita , Yoshio Hagiwara
IPC分类号： H01L214763
CPC分类号： H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/31138 , H01L21/3122 , H01L21/316 , H01L21/76801 , H01L21/76802 , H01L21/76826 , H01L21/76832
摘要： For suppressing decomposition of organic group (for example, CH3 group) during ashing process, which is bonded to Si atom of an organic SOG film or layer for use in flattening process, a method comprises following steps: forming an organic SOG layer directly or through a predetermined film including a hillock protection layer on said lower wiring layer; forming said upper wiring layer on said organic SOG layer without processing of etching back; forming a via hole through an etching process by using a patterned resist layer provided on said upper wiring layer as a mask; performing ashing process with a plasma by making ion or radical which is induced from oxygen gas as a main reactant, under an atmosphere of pressure ranging from 0.01 Torr to 30.0 Torr; and burying said via hole with conductive material so as to electrically connect between said lower wiring layer and said upper wiring layer.
摘要翻译：为了抑制灰化过程中有机基团（例如CH 3基团）的分解，其结合到有机SOG膜或用于平坦化处理的层的Si原子上，所述方法包括以下步骤：直接或直接形成有机SOG层在所述下布线层上具有小丘保护层的预定膜; 在所述有机SOG层上形成所述上布线层，而不进行回蚀处理; 通过使用设置在所述上布线层上的图案化抗蚀剂层作为掩模，通过蚀刻工艺形成通孔; 在0.01Torr至30.0Torr的压力气氛中，通过使由氧气引起的离子或自由基作为主反应物，通过等离子体进行灰化处理; 并用导电材料掩埋所述通孔，以便在所述下布线层和所述上布线层之间电连接。

9. 发明授权

US06214104B1 Coating solution for forming silica coating and method of forming silica coating 失效
标题翻译：用于形成二氧化硅涂层的涂层溶液和形成二氧化硅涂层的方法
公开(公告)号：US06214104B1
公开(公告)日：2001-04-10
申请号：US08692005
申请日：1996-08-02
申请人： Hiroyuki Iida , Hiroki Endo , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Hiroyuki Iida , Hiroki Endo , Hideya Kobari , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： B05D712
CPC分类号： C09D4/00 , C08G77/04
摘要： A substrate onto which a coating solution is dropped is rotated at a low speed in a first rotational mode and then after an interval of time at a high speed in a second rotational mode. At the end of the first rotational mode, the coating solution is coated to a thickness larger than a given thickness on irregularities on the substrate such as twin patterns and a global pattern, with the coating solution being coated to a thickness smaller than the given thickness between the twin patterns. Subsequently, at the start of the second rotational mode, the coating solution coated on the twin patterns and the global pattern flows into spaces between these patterns. At the end of the second rotational mode, the thickness of the coating solution on the twin patterns is almost nil, and the thickness of the coating solution on the global pattern is small in its entirety though it is somewhat large in the central area of the global pattern.
摘要翻译：在第一旋转模式中以低速旋转涂布溶液滴落到其上的基板，然后在第二旋转模式中以高速度在一段时间之后旋转。在第一旋转模式结束时，将涂布溶液涂覆到基板上的不规则部分上的厚度大于给定厚度，例如双图案和全局图案，涂布溶液的涂布厚度小于给定厚度在双胞胎之间。随后，在第二旋转模式开始时，涂覆在双模式上的涂布溶液和全局图案流入这些图案之间的空间。在第二旋转模式结束时，两个图案上的涂布溶液的厚度几乎为零，并且全局图案上的涂布溶液的厚度整体上小，但是其中心区域全球格局。

10. 发明授权

US5795378A Coating solution for silica-based coating film and method for the preparation thereof 失效
公开(公告)号：US5795378A
公开(公告)日：1998-08-18
申请号：US935510
申请日：1997-09-23
申请人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
发明人： Yoshinori Sakamoto , Yoshio Hagiwara , Toshimasa Nakayama
IPC分类号： C08G77/06 , C08J3/09 , C09D183/04 , H01L21/316 , C09D183/06
CPC分类号： C08J3/095 , C08G77/06 , C09D183/04 , C08J2383/04
摘要： Proposed is a coating solution for the formation of a silica-based coating film on the surface of a substrate used in the manufacturing process of semiconductor devices as well as a method for the coating solution, which exhibits excellent storage stability without gelation and is capable of forming a silica-based coating film free from the troubles due to evolution of gases such as crack formation even when the coating film has a relatively large thickness. The coating solution is prepared by the hydrolysis reaction of a trialkoxy silane such as triethoxy silane dissolved in propyleneglycol dimethyl ether in a specified concentration with addition of a specified amount of water followed by removal of the alcohol formed by the hydrolysis reaction of the trialkoxy silane by distillation to such an extent that the content of the alcohol in the coating solution does not exceed 10% by weight or, preferably, 3% by weight.

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