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1. 发明专利

JP2011068548A GROUP 3B NITRIDE CRYSTAL IN WHICH Zn IS DOPED, MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE 有权
标题翻译：第3组氮化锌晶体，其制造方法及电子器件
公开(公告)号：JP2011068548A
公开(公告)日：2011-04-07
申请号：JP2010160718
申请日：2010-07-15
申请人： Yasuo Kitaoka , Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 康夫北岡 , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , HIGASHIHARA SHUHEI , IMAI KATSUHIRO , MORI YUSUKE , KITAOKA YASUO , NAGAI SEIJI , SATO SHINYUKI
IPC分类号： C30B29/38 , C30B19/10
摘要： PROBLEM TO BE SOLVED: To provide a Zn-doped group 3B nitride crystal of high resistance and low dislocation density.
SOLUTION: In the Zn-doped group 3B nitride crystal, the specific resistance is at least 1×10
2 Ω cm, the Zn concentration in the group 3B nitride crystal is at least 1.0×10
18 atoms/cm
3 and at most 2×10
19 atoms/cm
3 , and the etch pit density is at most 5×10
6 /cm
2 . This crystal can be obtained by a liquid phase method (Na flux method).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高电阻和低位错密度的Zn掺杂的3B族氮化硼晶体。解决方案：在Zn掺杂基团3B氮化硅晶体中，电阻率为至少1×10 2 Ωcm，第3B族氮化物晶体中的Zn浓度为至少1.0×10 原子/ cm 3 / SP 3和至多2×10 14原子/ cm 3 / SP>，并且蚀刻坑密度至多为5×10 6 / cm 2 。该液晶可以通过液相法（Na通量法）得到。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2009023862A Group iii nitride crystal and method for growing the same 有权
标题翻译：第III组氮化物晶体及其生长方法
公开(公告)号：JP2009023862A
公开(公告)日：2009-02-05
申请号：JP2007187081
申请日：2007-07-18
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： FUJIWARA SHINSUKE , YOSHIDA HIROAKI , HIROTA TATSU , UEMATSU KOJI , TANAKA HARUKO , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal by which a large crystal can be grown in a liquid phase method.
SOLUTION: The method for growing a group III nitride crystal aims to grow a group III nitride crystal 10 by a liquid phase method. The method includes the steps of: preparing a substrate 1 that has a flat principal plane 1m, contains a group III nitride seed crystal 1a in at least the principal plane 1m side, the seed crystal having the same chemical composition as that of the group III nitride crystal 10, and has a radius of curvature of not less than 2 m as a warpage of a (hkil)-plane 1n nearest to the principal plane 1m, wherein i=-(h+k) and each of h, k and l is an integer from -9 to 9; and bringing a solution prepared by dissolving a nitrogen-containing gas 5 in a solvent 3 containing a group III metal and an alkali metal into contact with the principal plane 1m of the substrate 1 to grow the group III nitride crystal 10 on the principal plane 1m.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种用于生长可以以液相法生长大晶体的III族氮化物晶体的方法。解决方案：用于生长III族氮化物晶体的方法旨在通过液相法生长III族氮化物晶体10。该方法包括以下步骤：制备具有平坦主平面1m的基板1，至少在主平面1m侧包含III族氮化物晶种1a，晶种具有与III组相同的化学组成氮化物晶体10，并且具有不小于2μm的曲率半径作为最接近主平面1m的（hkil）面1n的翘曲，其中i = - （h + k）以及h，k和 l为-9〜9的整数; 并将通过将含氮气体5溶解在含有III族金属和碱金属的溶剂3中制备的溶液与基板1的主平面1m接触，以在主平面1m上生长III族氮化物晶体10 。版权所有（C）2009，JPO＆INPIT

3. 发明专利

JP2009018961A Process for producing group iii nitride crystal, group iii nitride crystal substrate, and group iii nitride semiconductor device 有权
标题翻译：用于生产III族氮化物晶体，III族氮化物晶体基板和III族氮化物半导体器件的方法
公开(公告)号：JP2009018961A
公开(公告)日：2009-01-29
申请号：JP2007182709
申请日：2007-07-12
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： HIROTA TATSU , KAWASE TOMOHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B9/00 , C30B33/02 , H01L33/32
摘要： PROBLEM TO BE SOLVED: To provide a process for producing a Group III nitride crystal having a low dislocation density and a low impurity concentration without damaging the crystal. SOLUTION: Nitrogen gas (nitrogen-containing gas 3) was dissolved in a Ga-Na-Li melt 2 in a reaction vessel 7 to grow a GaN crystal having a thickness of 100 μm on a principal surface 1m of a GaN base substrate 1 (a). Subsequently, metal Na was put into the reaction vessel 7, and the resulting mixture was heated to form a Na melt which is a liquid 4 for crystal treatment, in which was dissolved nitrogen gas (nitrogen-containing gas 3) to heat-treat the GaN crystal (group III nitride crystal 10). As a result, the surface of the crystal was roughened, but the crystal itself was not broken. As for the impurity concentrations of the GaN crystal (group III nitride crystal 10) and the GaN base substrate 1, Na concentration was 5×10 15 cm -3 , which was the same as the Na concentration before heat treatment, while Li concentration was 3×10 16 cm -3 , which was significantly lower than the Li concentration before heat treatment. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：待解决的问题：提供一种具有低位错密度和低杂质浓度的III族氮化物晶体的制造方法，而不损害晶体。解决方案：将氮气（含氮气体3）溶解在反应容器7中的Ga-Na-Li熔体2中，以在GaN基材的主表面1m上生长厚度为100μm的GaN晶体基板1（a）。随后，将金属Na放入反应容器7中，将所得混合物加热，形成作为结晶处理用液体4的Na熔体，其中为溶解氮气（含氮气体3），热处理 GaN晶体（III族氮化物晶体10）。结果，晶体的表面被粗糙化，但是晶体本身没有被破坏。对于GaN晶体（III族氮化物晶体10）和GaN基底基板1的杂质浓度，Na浓度为5×10 15×SP> -3 ，这是与热处理前的Na浓度相同，而Li浓度为3×10 16℃/ SP> -3 ，明显低于热处理前的Li浓度。版权所有（C）2009，JPO＆INPIT

4. 发明专利

JP2008254999A Crystal growing apparatus 有权
标题翻译：水晶生长装置
公开(公告)号：JP2008254999A
公开(公告)日：2008-10-23
申请号：JP2008029035
申请日：2008-02-08
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： YAMAZAKI SHIRO , HIRATA KOJI , SATO TOSHIYUKI , NAGAI SEIJI , IMAI KATSUHIRO , IWAI MAKOTO , HIGASHIHARA SHUHEI , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/02
摘要： PROBLEM TO BE SOLVED: To provide a flux method with an improved work efficiency while maintaining the purity of flux at a high level and saving the flux material cost.
SOLUTION: A sodium (Na) purifying apparatus 130 includes an apparatus 140 for holding and managing Na that keeps purified Na in a liquid state. Liquid Na is supplied to the apparatus 140 for holding and managing Na through a liquid Na supply tube 139 which is kept at 100°C. The apparatus 140 for holding and managing Na has an Ar gas purifying apparatus 141 that controls the condition of argon (Ar) gas which fills the internal space thereof. Thus, by turning a faucet 121 on and off at a desired timing, the purified liquid Na supplied from the Na purifying apparatus 130 can be introduced into a crucible c at will via the liquid Na supply tube 139, the apparatus 140 for holding and managing Na and piping 149.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有提高的工作效率的助焊剂方法，同时将焊剂的纯度保持在高水平并且节省焊剂材料成本。解决方案：钠（Na）纯化装置130包括用于保持和管理保持纯化的Na处于液态的Na的装置140。液体Na被供给到用于通过保持在100℃的液体Na供应管139保持和管理Na的装置140。用于保持和管理Na的装置140具有控制填充其内部空间的氩（Ar）气体的状态的Ar气体净化装置141。因此，通过在期望的时刻打开和关闭水龙头121，可以从Na净化装置130供应的净化液体Na经由液体Na供给管139，用于保持和管理的装置140被引入坩埚c Na和管道149.版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2005072572A Manufacturing method of group iii nitride crystal substrate and etchant used for the same and, group iii nitride crystal substrate and semiconductor element using the same 有权
标题翻译： III族氮化物晶体基板的制造方法及其使用的蚀刻剂，第III族氮化物晶体基板和使用其的半导体元件
公开(公告)号：JP2005072572A
公开(公告)日：2005-03-17
申请号：JP2004227097
申请日：2004-08-03
申请人： Matsushita Electric Ind Co Ltd , Yusuke Mori , 松下電器産業株式会社 , 勇介森
发明人： MINEMOTO TAKASHI , KITAOKA YASUO , KIDOGUCHI ISAO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B19/00 , C30B29/38 , C30B33/10 , H01L21/20 , H01L21/208 , H01L21/304 , H01L21/308 , H01L21/338 , H01L29/812 , H01L33/06 , H01L33/22 , H01L33/32 , H01S5/343 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a group III nitride crystal substrate with projections and recesses on the surface suppressed. SOLUTION: In a process of performing surface treatment on the surface of a group III nitride crystal 11 having projections and recesses, such as pits, hillocks, facets or the like, the surface is brought into contact with a melt including at least one of an alkali metal and alkaline earth metal for meltback etching, or the melt is used for mechano-chemical polishing. Thereby, the group III nitride crystal substrate 17, with suppressed work distortion and work defects and superior planarity of surface, is manufactured. Moreover, a semiconductor element with high characteristics, for example, is obtained by using this group III nitride crystal substrate. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种III族氮化物晶体基板，其表面上具有突起和凹陷。解决方案：在具有凹凸，例如凹坑，小丘，小面等的III族氮化物晶体11的表面进行表面处理的过程中，使表面与至少包括至少用于回熔蚀刻的碱金属和碱土金属之一，或熔体用于机械化学抛光。因此，制造了具有抑制的工作变形和工作缺陷以及优异的表面平面性的III族氮化物晶体基板17。此外，通过使用该III族氮化物晶体基板，可获得例如具有高特性的半导体元件。版权所有（C）2005，JPO＆NCIPI

6. 发明专利

JP2004107104A Organic optical single crystal and electric field detecting device using the same 有权
标题翻译：有机光学单晶和电场检测装置
公开(公告)号：JP2004107104A
公开(公告)日：2004-04-08
申请号：JP2002268883
申请日：2002-09-13
申请人： Hiroaki Adachi , Dai Ichi Pure Chem Co Ltd , Yusuke Mori , Takatomo Sasaki , Masashi Yoshimura , 佐々木孝友 , 吉村政志 , 安達宏昭 , 森勇介 , 第一化学薬品株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , ADACHI HIROAKI , TSUNESADA FUMI , NAGAOKA KAZUTOSHI
IPC分类号： G01R15/24 , B01D9/02 , C07D213/38 , C30B29/54
摘要： PROBLEM TO BE SOLVED: To provide a DAST (4-dimethylamiuo-N-methyl-4-stilbazolium tosylate) single crystal having uniform electro-optic characteristics over whole crystal, and to apply the DAST single crystal as an electro-optic device. SOLUTION: The DAST single crystal having uniform electro-optic characteristics over whole crystal is obtained by sufficiently purifying a DAST raw material for producing the single crystal by recrystallization and combining an SNM method and a specific gravity difference solvent purifying method. That is to say, the DAST single crystal is obtained by growing the single crystal by the SNM method from a DAST solution containing the DAST raw material purified by recrystallization and purifying by moving the DAST single crystal into an inert solvent layer having a specific gravity larger than that of the DAST solution. The DAST single crystal having uniform electro-optic characteristics can be applied in an electric field detecting device without determining the mutual positions of a light source, the DAST single crystal and a light receiving section. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供在整个晶体上具有均匀电光特性的DAST（4-二甲基氨基-N-甲基-4-苯乙唑甲酸酯）单晶，并将DAST单晶作为电光设备。解决方案：通过充分纯化用于通过重结晶制备单晶的DAST原料并结合SNM法和比重差分溶剂纯化法，获得具有整个晶体上的均匀电光特性的DAST单晶。也就是说，DAST单晶通过SNM方法从含有通过重结晶纯化的DAST原料的DAST溶液生长单晶而获得，并通过将DAST单晶移动到具有比重更大的惰性溶剂层中的纯化比DAST解决方案。可以在电场检测装置中应用具有均匀电光特性的DAST单晶体，而不确定光源，DAST单晶和光接收部分的相互位置。版权所有（C）2004，JPO

7. 发明专利

JP2011020896A GROUP 3B NITRIDE CRYSTAL DOPED WITH Zn, METHOD FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE 审中-公开
标题翻译：用于Zn的氮化硼晶体组3B，其制造方法和电子器件
公开(公告)号：JP2011020896A
公开(公告)日：2011-02-03
申请号：JP2009167901
申请日：2009-07-16
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , HIGASHIHARA SHUHEI , IMAI KATSUHIRO , MORI YUSUKE , KITAOKA YASUO , NAGAI SEIJI , SATO SHINYUKI
IPC分类号： C30B29/38 , C30B19/02 , H01L21/20 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a Zn-doped group 3B nitride crystal having high resistance and low dislocation density.
SOLUTION: The Zn-doped group 3B nitride crystal has specific resistance of not less than 1×10
2 Ω cm, Zn concentration of from 1.0×10
18 to 2×10
19 atoms/cm
3 in the group 3B nitride crystal, and etch pit density of not more than 5×10
6 /cm
2 . The crystal can be obtained by a liquid phase method (Na flux method).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供具有高电阻和低位错密度的Zn掺杂基团3B氮化物晶体。解决方案：Zn掺杂基团3B氮化硅晶体具有不小于1×10 2 Ωcm的电阻率，1.0×10 18 3B族氮化物晶体中的2×10 19 原子/ cm 3 / SP>，蚀刻坑密度不大于5×10 6 / 2 。可以通过液相法（Na通量法）获得晶体。版权所有（C）2011，JPO＆INPIT

8. 发明专利

JP2010100449A Method for growing group iii nitride crystal 审中-公开
标题翻译：生长III类氮化物晶体的方法
公开(公告)号：JP2010100449A
公开(公告)日：2010-05-06
申请号：JP2008271136
申请日：2008-10-21
申请人： Yusuke Mori , Sumitomo Electric Ind Ltd , 住友電気工業株式会社 , 勇介森
发明人： MORISHITA MASANORI , UEMATSU KOJI , TANAKA HARUKO , YOSHIDA HIROAKI , FUJIWARA SHINSUKE , MORI YUSUKE , SASAKI TAKATOMO , KAWAMURA SHIRO , KITAOKA YASUO
IPC分类号： C30B29/38 , C30B19/02 , H01L21/208
摘要： PROBLEM TO BE SOLVED: To provide a method for growing a group III nitride crystal, by which a group III nitride crystal having low dislocation density is grown with satisfactory reproducibility even if the crystal growth speed is decreased.
SOLUTION: The method for growing a group III nitride crystal 10 is based on a liquid phase method, and includes a process for preparing a ground substrate 1 and a process for growing the group III nitride crystal 10 on the main surface 1m of the ground substrate by bringing a solution 6, obtained by dissolving a nitrogen-containing gas 5 into a solvent 3 containing a group III metal and an alkali metal, into contact with the main surface 1m. In the process for growing the group III nitride crystal 10, the crystal growth speed is gradually increased from 0 μm/hr at a speed change rate of ≤1 μm/hr
2 .
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种生长III族氮化物晶体的方法，即使晶体生长速度降低，通过该方法可以以令人满意的再现性生长具有低位错密度的III族氮化物晶体。解决方案：用于生长III族氮化物晶体10的方法基于液相法，并且包括制备接地衬底1的方法和用于在III族氮化物晶体10的主表面1m上生长III族氮化物晶体10的方法通过将含有氮的气体5溶解在含有III族金属和碱金属的溶剂3中而获得的溶液6与基底表面1m接触而形成基底。在生长III族氮化物晶体10的过程中，晶体生长速度以≤1μm/ hr 2 的速度变化率从0μm/ hr逐渐增加。版权所有（C）2010，JPO＆INPIT

9. 发明专利

JP2009044137A Light-emitting device and phosphor 有权
标题翻译：发光装置和磷光体
公开(公告)号：JP2009044137A
公开(公告)日：2009-02-26
申请号：JP2008176504
申请日：2008-07-07
申请人： Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 考友佐々木 , 雅史原田 , 養一川上 , 勇介森
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： H01S5/022 , C09K11/08 , C09K11/62 , C09K11/64 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/50 , H01S5/026
CPC分类号： Y02B20/181
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device provided with a light source for emitting primary light and a phosphor for absorbing the primary light and emitting secondary light, capable of emitting white light of high luminance, low power consumption and long service life with few damages on an environment. SOLUTION: A fluorescent material included in the phosphor provided to the light-emitting device is the particulate crystal of a III-V compound semiconductor, wherein the phosphor has three layers, and the layers are laminated so as to reduce the size of the fluorescent material from the incidence side of the primary light to the emission side thereof. COPYRIGHT: (C)2009,JPO&INPIT

10. 发明专利

JP2008222492A Melt composition for growing gallium nitride single crystal and method for growing gallium nitride single crystal 有权
标题翻译：用于生长氮化镓单晶的熔融组合物和用于生长氮化镓单晶的方法
公开(公告)号：JP2008222492A
公开(公告)日：2008-09-25
申请号：JP2007063110
申请日：2007-03-13
申请人： Yusuke Mori , Ngk Insulators Ltd , Toyoda Gosei Co Ltd , 日本碍子株式会社 , 勇介森 , 豊田合成株式会社
发明人： IWAI MAKOTO , SHIMODAIRA TAKANAO , YAMAMURA YOSHIHIKO , YAMAZAKI SHIRO , SASAKI TAKATOMO , MORI YUSUKE , KAWAMURA SHIRO
IPC分类号： C30B29/38 , C30B19/04
摘要： PROBLEM TO BE SOLVED: To provide a method by which the impurity band light-emission of a crystal can be reduced, the crystal having good transparency can be obtained, and the flatness of the crystal can be improved when a GaN single crystal is grown by a flux method using a Ga-Na-based melt.
SOLUTION: A melt composition containing gallium, sodium, barium and lithium is used for growing a gallium nitride single crystal by the flux method. The compositional ratio except gallium being a raw material is such that the total amount of barium and lithium is 0.02 to 1.0 mol% when the amount of sodium is 100 mol%.
COPYRIGHT: (C)2008,JPO&INPIT

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