专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2004307333A Method for manufacturing nitride single crystal of group iii element, apparatus used for the same, and nitride single crystal of group iii element obtained by the method 有权
公开(公告)号：JP2004307333A
公开(公告)日：2004-11-04
申请号：JP2004087901
申请日：2004-03-24
申请人： Matsushita Electric Ind Co Ltd , Takatomo Sasaki , 孝友佐々木 , 松下電器産業株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , KAI YASUNORI , IMAIDE KAN , KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： C30B29/38 , C30B23/02 , C30B25/02
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved.
SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10
5 Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH
3 and N
2 .
COPYRIGHT: (C)2005,JPO&NCIPI

2. 发明专利

JP2004107104A Organic optical single crystal and electric field detecting device using the same 有权
标题翻译：有机光学单晶和电场检测装置
公开(公告)号：JP2004107104A
公开(公告)日：2004-04-08
申请号：JP2002268883
申请日：2002-09-13
申请人： Hiroaki Adachi , Dai Ichi Pure Chem Co Ltd , Yusuke Mori , Takatomo Sasaki , Masashi Yoshimura , 佐々木孝友 , 吉村政志 , 安達宏昭 , 森勇介 , 第一化学薬品株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , ADACHI HIROAKI , TSUNESADA FUMI , NAGAOKA KAZUTOSHI
IPC分类号： G01R15/24 , B01D9/02 , C07D213/38 , C30B29/54
摘要： PROBLEM TO BE SOLVED: To provide a DAST (4-dimethylamiuo-N-methyl-4-stilbazolium tosylate) single crystal having uniform electro-optic characteristics over whole crystal, and to apply the DAST single crystal as an electro-optic device. SOLUTION: The DAST single crystal having uniform electro-optic characteristics over whole crystal is obtained by sufficiently purifying a DAST raw material for producing the single crystal by recrystallization and combining an SNM method and a specific gravity difference solvent purifying method. That is to say, the DAST single crystal is obtained by growing the single crystal by the SNM method from a DAST solution containing the DAST raw material purified by recrystallization and purifying by moving the DAST single crystal into an inert solvent layer having a specific gravity larger than that of the DAST solution. The DAST single crystal having uniform electro-optic characteristics can be applied in an electric field detecting device without determining the mutual positions of a light source, the DAST single crystal and a light receiving section. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：提供在整个晶体上具有均匀电光特性的DAST（4-二甲基氨基-N-甲基-4-苯乙唑甲酸酯）单晶，并将DAST单晶作为电光设备。解决方案：通过充分纯化用于通过重结晶制备单晶的DAST原料并结合SNM法和比重差分溶剂纯化法，获得具有整个晶体上的均匀电光特性的DAST单晶。也就是说，DAST单晶通过SNM方法从含有通过重结晶纯化的DAST原料的DAST溶液生长单晶而获得，并通过将DAST单晶移动到具有比重更大的惰性溶剂层中的纯化比DAST解决方案。可以在电场检测装置中应用具有均匀电光特性的DAST单晶体，而不确定光源，DAST单晶和光接收部分的相互位置。版权所有（C）2004，JPO

3. 发明专利

JP2004083653A Light emitting device, phosphor and method for producing the same 审中-公开
公开(公告)号：JP2004083653A
公开(公告)日：2004-03-18
申请号：JP2002243502
申请日：2002-08-23
申请人： Shigeo Fujita , Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 佐々木考友 , 原田雅史 , 川上養一 , 森勇介 , 藤田茂夫
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： B82B1/00 , B82B3/00 , B82Y20/00 , B82Y30/00 , B82Y40/00 , C09K11/08 , C09K11/62 , C09K11/64 , H01S3/08 , H01S5/022 , H01S5/323 , H01S5/343
CPC分类号： B82Y20/00 , C09K11/0883 , C09K11/62 , H01L33/502 , H01S5/005 , H01S5/02284 , H01S5/02296 , H01S5/34333 , Y10S977/783 , Y10S977/815 , Y10S977/816
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device which comprises a light source for emitting a primary light and a phosphor absorbing the primary light and emitting a secondary light and has reduced damage to the environment, high luminance, low power consumption and a long life. SOLUTION: The light emitting device is obtained by using III-V semiconductor as a material for an illuminant and comprises the fine particle crystal of the semiconductor having ≤2,800 mm 3 volume. The light emitted by the fine particle crystal depends on the volume of the crystal and the wavelength range of the secondary light is regulated by making the fine particle crystal have a volume distribution. COPYRIGHT: (C)2004,JPO

4. 发明专利

JP2004117213A Method and device for detection of electric field 审中-公开
标题翻译：用于检测电场的方法和装置
公开(公告)号：JP2004117213A
公开(公告)日：2004-04-15
申请号：JP2002281775
申请日：2002-09-26
申请人： Hiroaki Adachi , Dai Ichi Pure Chem Co Ltd , Yusuke Mori , Takatomo Sasaki , Masashi Yoshimura , 佐々木孝友 , 吉村政志 , 安達宏昭 , 森勇介 , 第一化学薬品株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , ADACHI HIROAKI , TSUNESADA FUMI , NAGAOKA KAZUTOSHI
IPC分类号： G01R15/24 , C30B29/54 , G01R19/00 , G01R29/08 , G01R31/302
摘要： PROBLEM TO BE SOLVED: To provide a technology for measuring electric field at a certain high sensitivity, when measuring electric field by using electro-optical crystals, without depending on the frequency over a wide range from low-frequency range, including direct current to terahertz range. SOLUTION: With the provided method and device, electric field over a wide zone frequency range is detected, by using 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) as the electro-optical crystal. COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供以一定的高灵敏度测量电场的技术，当使用电光晶体测量电场时，不依赖于在低频范围的宽范围内的频率，包括直接电流到太赫兹范围。解决方案：使用所提供的方法和装置，通过使用4-二甲基氨基-N-甲基-4-苯乙唑烷甲苯磺酸盐（DAST）作为电光晶体，检测在宽区域频率范围内的电场。版权所有（C）2004，JPO

5. 发明专利

JP2009044137A Light-emitting device and phosphor 有权
标题翻译：发光装置和磷光体
公开(公告)号：JP2009044137A
公开(公告)日：2009-02-26
申请号：JP2008176504
申请日：2008-07-07
申请人： Masafumi Harada , Yoichi Kawakami , Yusuke Mori , Takatomo Sasaki , Sharp Corp , シャープ株式会社 , 考友佐々木 , 雅史原田 , 養一川上 , 勇介森
发明人： ISHIDA SHINYA , MORIOKA TATSUYA , HANAOKA DAISUKE , TANETANI MOTOTAKA , FUJITA SHIGEO , KAWAKAMI YOICHI , HARADA MASAFUMI , SASAKI TAKATOMO , MORI YUSUKE
IPC分类号： H01S5/022 , C09K11/08 , C09K11/62 , C09K11/64 , H01L33/06 , H01L33/32 , H01L33/42 , H01L33/50 , H01S5/026
CPC分类号： Y02B20/181
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device provided with a light source for emitting primary light and a phosphor for absorbing the primary light and emitting secondary light, capable of emitting white light of high luminance, low power consumption and long service life with few damages on an environment. SOLUTION: A fluorescent material included in the phosphor provided to the light-emitting device is the particulate crystal of a III-V compound semiconductor, wherein the phosphor has three layers, and the layers are laminated so as to reduce the size of the fluorescent material from the incidence side of the primary light to the emission side thereof. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光装置，其具有用于发射一次光的光源和用于吸收初级光和发出次级光的荧光体，能够发出高亮度，低功耗的白光，以及使用寿命长，环境损坏少。解决方案：提供给发光器件的荧光体中包含的荧光材料是III-V族化合物半导体的颗粒状晶体，其中磷光体具有三层，并且层压以减小尺寸荧光材料从初级光的入射侧到其发射侧。版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2006089376A Method for manufacturing nitride single crystal of group iii element, apparatus used for the same, and nitride single crystal of group iii element obtained by the method 审中-公开
标题翻译：用于制造III族元素的氮化物单晶的方法，用于其的装置和由方法获得的III族元素的氮化物单晶
公开(公告)号：JP2006089376A
公开(公告)日：2006-04-06
申请号：JP2005333054
申请日：2005-11-17
申请人： Matsushita Electric Ind Co Ltd , Takatomo Sasaki , 孝友佐々木 , 松下電器産業株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , KAWAMURA SHIRO , KAI YASUNORI , IMAIDE KAN , KITAOKA YASUO , MINEMOTO TAKASHI , KIDOGUCHI ISAO
IPC分类号： C30B29/38
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium nitride single crystal, by which the decomposition of gallium nitride can be suppressed in a sublimation method, and the production efficiency is improved. SOLUTION: In the method for manufacturing the gallium nitride single crystal, comprising a step of growing the gallium nitride single crystal on the surface of a substrate 3 by feeding a raw material (GaN powder) 2 of the gallium nitride (GaN) single crystal in a crucible 1, then heating the crucible so as to sublimate or evaporate the raw material 2, and utilizing that the sublimated or evaporated raw material recrystallizes when the temperature is again lowered on the surface of the substrate 3, the growth of the single crystal is performed under pressure. Preferable pressure is ≥5 atm (5×1.013×10 5 Pa). Preferably, the growth of the single crystal is performed in the atmosphere of a mixed gas of gaseous NH 3 and N 2 . COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供一种制造氮化镓单晶的方法，通过该方法可以在升华方法中抑制氮化镓的分解，并提高生产效率。解决方案：在用于制造氮化镓单晶的方法中，包括通过将氮化镓（GaN）的原料（GaN粉末）2供给到衬底3的表面上来生长氮化镓单晶的步骤，在坩埚1中单晶，然后加热坩埚以使原料2升华或蒸发，并且利用升华的或蒸发的原料在基板3的表面上再次降低温度时再结晶，单晶在压力下进行。优选压力≥5atm（5×1.013×10 5 Pa）。优选地，单晶的生长在气态NH 3 SB 3和N SB 2的混合气体的气氛中进行。版权所有（C）2006，JPO＆NCIPI

7. 发明专利

JP2004083345A Process for preparing organic optical single crystal 有权
公开(公告)号：JP2004083345A
公开(公告)日：2004-03-18
申请号：JP2002247332
申请日：2002-08-27
申请人： Hiroaki Adachi , Dai Ichi Pure Chem Co Ltd , Yusuke Mori , Takatomo Sasaki , Masashi Yoshimura , 佐々木孝友 , 吉村政志 , 安達宏昭 , 森勇介 , 第一化学薬品株式会社
发明人： SASAKI TAKATOMO , MORI YUSUKE , YOSHIMURA MASASHI , ADACHI HIROAKI , TSUNESADA FUMI , NAGAOKA KAZUTOSHI
IPC分类号： G02F1/361 , C30B29/54
摘要： PROBLEM TO BE SOLVED: To provide a process for forming an organic optical single crystal having a desirable shape at the point of crystal growth. SOLUTION: In the process, the organic optical single crystal is formed from a solution of an organic optical material while changing the concentration of the organic optical material in the solution to control the thickness and/or the aspect ratio of the single crystal. COPYRIGHT: (C)2004,JPO

8. 发明授权

US08084281B2 Semiconductor substrate, electronic device, optical device, and production methods therefor 有权
标题翻译：半导体衬底，电子器件，光学器件及其制造方法
公开(公告)号：US08084281B2
公开(公告)日：2011-12-27
申请号：US12087048
申请日：2007-03-15
申请人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
发明人： Naoki Shibata , Koji Hirata , Shiro Yamazaki , Katsuhiro Imai , Makoto Iwai , Takatomo Sasaki , Yusuke Mori , Fumio Kawamura
IPC分类号： H01L21/00
CPC分类号： C30B9/10 , C30B19/02 , C30B19/063 , C30B29/403 , H01L21/02381 , H01L21/02458 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66462 , H01L29/7783 , H01L29/7787 , H01L33/0075
摘要： The present invention provides a method for producing a semiconductor substrate, the method including reacting nitrogen (N) with gallium (Ga), aluminum (Al), or indium (In), which are group III elements, in a flux mixture containing a plurality of metal elements selected from among alkali metals and alkaline earth metals, to thereby grow a group III nitride based compound semiconductor crystal. The group III nitride based compound semiconductor crystal is grown while the flux mixture and the group III element are mixed under stirring. At least a portion of a base substrate on which the group III nitride based compound semiconductor crystal is grown is formed of a flux-soluble material, and the flux-soluble material is dissolved in the flux mixture, at a temperature near the growth temperature of the group III nitride based compound semiconductor crystal, during the course of growth of the semiconductor crystal.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该方法包括使氮（N）与作为III族元素的镓（Ga），铝（Al）或铟（In））在含有多个选自碱金属和碱土金属的金属元素，从而生长III族氮化物基化合物半导体晶体。在熔融混合物和III族元素在搅拌下混合，生长III族氮化物基化合物半导体晶体。在其上生长III族氮化物基化合物半导体晶体的基底基板的至少一部分由助溶剂材料形成，并且将助熔剂材料溶解在助熔剂混合物中，在接近生长温度的温度在所述半导体晶体的生长过程中，所述III族氮化物基化合物半导体晶体。

9. 发明申请

US20110048115A1 METHOD FOR ANALYZING SAMPLE IN LIQUID 有权
标题翻译：分析液体样品的方法
公开(公告)号：US20110048115A1
公开(公告)日：2011-03-03
申请号：US12197108
申请日：2008-08-22
申请人： MASAHIRO OTA , NORIAKI OYABU , HIROAKI ADACHI , MASAYUKI ABE , SEIZO MORITA , YUSUKE MORI , TAKATOMO SASAKI
发明人： MASAHIRO OTA , NORIAKI OYABU , HIROAKI ADACHI , MASAYUKI ABE , SEIZO MORITA , YUSUKE MORI , TAKATOMO SASAKI
IPC分类号： G01N1/00 , G01Q80/00
CPC分类号： G01Q30/14 , G01N1/36 , G02B21/33 , G02B21/34
摘要： A method for analyzing a sample in a liquid is provided, which is suitable for easily and reliably preventing a liquid for analysis from being evaporated. When the sample in the liquid is observed by using a scanning probe microscope (SPM), a sealing liquid (17) immiscible with a liquid for analysis (16) is filled around the liquid for analysis (16), in which a sample (13) and a probe (15) are immersed, so as to form a sealing state, in which the liquid for analysis (16) is isolated from an external gas. The SPM enables the probe (15) disposed on a front end of a cantilever (14) to approach a surface of the sample (13) immersed in the liquid, scans the surface of the sample, and detects an interaction between the sample (13) and the probe (15), thereby generating an image.
摘要翻译：提供一种用于分析液体中的样品的方法，其适于容易且可靠地防止用于分析的液体蒸发。当使用扫描探针显微镜（SPM）观察液体中的样品时，将用于分析的液体（16）不混溶的密封液体（17）填充在用于分析的液体（16）周围，其中样品（13 ）和探针（15），以便形成用于分析用液体（16）与外部气体隔离的密封状态。 SPM使得布置在悬臂（14）的前端上的探针（15）接近浸入液体中的样品（13）的表面，扫描样品的表面，并检测样品（13）之间的相互作用）和探头（15），从而产生图像。

10. 发明授权

US07794539B2 Method for producing III group element nitride crystal, production apparatus for use therein, and semiconductor element produced thereby 失效
标题翻译：生产III族元素氮化物晶体的方法，其中使用的制造装置以及由此制造的半导体元件
公开(公告)号：US07794539B2
公开(公告)日：2010-09-14
申请号：US10599501
申请日：2005-03-31
申请人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
发明人： Hisashi Minemoto , Yasuo Kitaoka , Isao Kidoguchi , Yusuke Mori , Fumio Kawamura , Takatomo Sasaki , Yasuhito Takahashi
IPC分类号： C30B9/00 , C30B30/04 , C30B28/06 , C30B11/00
CPC分类号： C30B9/10 , C30B29/403 , C30B29/406 , Y10T117/1092 , Y10T117/1096
摘要： A method for producing Group-III-element nitride crystals by which an improved growth rate is obtained and large high-quality crystals can be grown in a short time, a producing apparatus used therein, and a semiconductor element obtained using the method and the apparatus are provided. The method is a method for producing Group-III-element nitride crystals that includes a crystal growth process of subjecting a material solution containing a Group III element, nitrogen, and at least one of alkali metal and alkaline-earth metal to pressurizing and heating under an atmosphere of a nitrogen-containing gas so that the nitrogen and the Group III element in the material solution react with each other to grow crystals. The method further includes, prior to the crystal growth process, a material preparation process of preparing the material solution in a manner that under an atmosphere of a nitrogen-containing gas, at least one of an ambient temperature and an ambient pressure is set so as to be higher than is set as a condition for the crystal growth process so that the nitrogen is allowed to dissolve in a melt containing the Group III element and the at least one of alkali metal and alkaline-earth metal. The method according to the present invention can be performed by using, for example, the producing apparatus shown in FIG. 7.
摘要翻译：一种生产III族元素的氮化物晶体的方法，其中获得了改善的生长速率并且可以在短时间内生长大量的高质量晶体，其中使用的制造装置以及使用该方法和装置得到的半导体元件被提供。该方法是生产III族元素氮化物晶体的方法，其包括使含有III族元素，氮和至少一种碱金属和碱土金属的材料溶液经受加压和加热的晶体生长过程含氮气体的气氛使得材料溶液中的氮和III族元素彼此反应生长晶体。该方法还包括在晶体生长过程之前，制备材料制备方法，该方法是在含氮气体的气氛中，将环境温度和环境压力中的至少一种设定为高于设定为晶体生长过程的条件，使得氮能够溶解在含有III族元素和碱金属和碱土金属中的至少一种的熔体中。根据本发明的方法可以通过使用例如图1所示的制造装置来执行。 7。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式