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1. 发明授权

US06583062B1 Method of improving an aspect ratio while avoiding etch stop 有权
标题翻译：改善纵横比同时避免蚀刻停止的方法
公开(公告)号：US06583062B1
公开(公告)日：2003-06-24
申请号：US10072764
申请日：2002-02-07
申请人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
发明人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
IPC分类号： H01L21311
CPC分类号： H01L21/31144 , H01L21/3085
摘要： A plasma etching method for improving an aspect ratio including an etching profile including providing a substrate including an oxide containing insulating layer in a multilayer semiconductor device having at least a first underlying etching stop layer and at least a second etching stop layer overlying the oxide containing insulating layer; providing a patterned photoresist layer exposing an uppermost layer of the substrate for plasma etching; plasma etching through a thickness of at least a portion of the substrate; exposing the substrate to a polymerizing radiation source in at least a first curing process to initiate polymer cross-linking reactions; and plasma etching through at least another portion of a thickness of the substrate.
摘要翻译：一种用于改善包括蚀刻轮廓的纵横比的等离子体蚀刻方法，包括在具有至少第一底层蚀刻停止层的层叠半导体器件中提供包括含氧化物的绝缘层的衬底和至少包含绝缘体氧化物的至少第二蚀刻停止层层; 提供曝光用于等离子体蚀刻的衬底的最上层的图案化光致抗蚀剂层; 通过衬底的至少一部分的厚度进行等离子体蚀刻; 在至少第一固化过程中将基底暴露于聚合辐射源以引发聚合物交联反应; 以及通过衬底厚度的至少另一部分进行等离子体蚀刻。

2. 发明授权

US06830877B2 Method for forming via and contact holes with deep UV photoresist 失效
标题翻译：用深紫外光致抗蚀剂形成通孔和接触孔的方法
公开(公告)号：US06830877B2
公开(公告)日：2004-12-14
申请号：US10038800
申请日：2001-12-31
申请人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
发明人： Ching-Tien Ma , Tsung-Chuan Chen , Shew-Tsu Hsu
IPC分类号： G03F700
CPC分类号： H01L21/31144
摘要： A method for forming via openings or contact holes with improved aspect ratios by using a deep UV photoresist is described. In the method, after a deep UV photoresist layer is deposited on top of a thick oxide layer, the deep UV photoresist layer is pre-treated by a curing process with UV radiation for a time period of at least 1 min, and preferably between about 1 min and about 10 min at a temperature of at least 100° C., and preferably at least 160° C. The curing process stabilizes the structure of the deep UV photoresist material and thus reduces the formation of fluorocarbon polymers by the carbon component in the photoresist material and the fluorine component in the etchant gas, and subsequently, reduces the coating of such fluorocarbon polymers at the bottom of the via openings which would otherwise stop the etching process during via or contact formation.
摘要翻译：描述了通过使用深UV光致抗蚀剂形成具有改进的纵横比的通孔开口或接触孔的方法。在该方法中，在深厚的UV光致抗蚀剂层沉积在厚氧化物层的顶部之后，深UV光致抗蚀剂层通过UV辐照的固化过程预处理至少1分钟的时间段，优选在约 1分钟和约10分钟，优选至少160℃。固化过程使深UV光致抗蚀剂材料的结构稳定，从而通过碳成分减少碳氟聚合物的形成蚀刻剂气体中的光致抗蚀剂材料和氟组分，并且随后减少了通孔开口底部的这种碳氟聚合物的涂层，否则在通孔或接触形成期间将停止蚀刻工艺。

3. 发明授权

US06764810B2 Method for dual-damascene formation using a via plug 失效
标题翻译：使用通孔塞形成双镶嵌法的方法
公开(公告)号：US06764810B2
公开(公告)日：2004-07-20
申请号：US10132432
申请日：2002-04-25
申请人： Ching-Tien Ma , Tsung-Chuan Chen , Chun-Liang Fan
发明人： Ching-Tien Ma , Tsung-Chuan Chen , Chun-Liang Fan
IPC分类号： G03F726
CPC分类号： H01L21/76808
摘要： A method for improving a photolithographic patterning process in a dual damascene process including providing at least one via opening in a substrate including a low dielectric constant material; blanket depositing a photo-sensitive resinous layer to fill the at least one via opening; partially removing the photo-sensitive resinous layer to form an at least partially filled via plug; photo-curing the via plug such that an activating light source causes a polymer cross-linking chemical reaction; and, forming a trench line opening disposed substantially over the at least one via opening using a trench line photoresist to pattern the trench line opening.
摘要翻译：一种用于改进双镶嵌工艺中的光刻图案化工艺的方法，包括在包括低介电常数材料的衬底中提供至少一个通孔开口; 毯子沉积感光树脂层以填充所述至少一个通孔; 部分地去除感光树脂层以形成至少部分填充的通孔塞; 光固化通孔塞使得活化光源引起聚合物交联化学反应; 并且使用沟槽光致抗蚀剂形成基本上设置在至少一个通孔开口上方的沟槽线开口，以对沟槽开口进行图案化。

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