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1. 发明授权

US06610373B2 Magnetic film-forming device and method 有权
公开(公告)号：US06610373B2
公开(公告)日：2003-08-26
申请号：US09972919
申请日：2001-10-10
申请人： Daisuke Nakajima , Koji Tsunekawa , Naoki Watanabe
发明人： Daisuke Nakajima , Koji Tsunekawa , Naoki Watanabe
IPC分类号： C23C1402
CPC分类号： B82Y25/00 , B82Y40/00 , C23C14/022 , C23C14/3464 , H01F41/302
摘要： In a device for forming magnetic film which deposits magnetic material on a substrate 12, a device is provided which, before the magnetic film is formed in a magnetic film-forming chamber 11, cleans one or both of the film-forming face and reverse face of the substrate 12 in a cleaning processing chamber 13. The cleaning mechanism carries out cleaning by placing a substrate on a horseshoe-shaped insulator substrate-holding part 51 which moves up and down, and emission of gas from the reverse face of the substrate and the like is brought about by generating Ar plasma between the upper periphery of the substrate, the substrate and a lower insulator 61 of the substrate.

2. 发明申请

US20080055793A1 MAGNETORESISTANCE EFFECT DEVICE 审中-公开
标题翻译：磁阻效应器件
公开(公告)号：US20080055793A1
公开(公告)日：2008-03-06
申请号：US11876916
申请日：2007-10-23
申请人： David Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
发明人： David Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
IPC分类号： G11B5/33
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
摘要翻译：一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层定向纹理结构。

3. 发明申请

US20110042209A1 SPUTTERING APPARATUS AND RECORDING MEDIUM FOR RECORDING CONTROL PROGRAM THEREOF 审中-公开
标题翻译：用于记录控制程序的溅射装置和记录介质
公开(公告)号：US20110042209A1
公开(公告)日：2011-02-24
申请号：US12934497
申请日：2009-06-16
申请人： Nobuo Yamaguchi , Koji Tsunekawa , Naoki Watanabe , Motomu Kosuda
发明人： Nobuo Yamaguchi , Koji Tsunekawa , Naoki Watanabe , Motomu Kosuda
IPC分类号： C23C14/34
CPC分类号： C23C14/3492 , C23C14/225 , C23C14/3407 , C23C14/54
摘要： Disclosed is a sputtering device wherein a target (2) is disposed offset with respect to a substrate (7), wherein said sputtering device can ensure a uniform amount of deposition, even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations, and the amount of deposition is extremely small, such as a film thickness of 1 nm or less. A control unit (11) is provided to perform control using input of the values of a total whole number of rotations N and a fractional number of rotations α such that X=N+α (where N is the total whole number of rotations and is a positive whole number, and α is the fractional number of rotations and is a positive pure decimal) and, by input of the value of a deposition time T such that the rotational velocity V (rps) of the aforementioned substrate support holder (6) satisfies V·T=N+α when the total number of rotations of the aforementioned substrate support holder (6) is X, during the deposition time of T (seconds) for particles sputtered onto the surface of the aforementioned substrate (7) where a film is to be formed.
摘要翻译：公开了一种溅射装置，其中靶（2）相对于基板（7）偏置地设置，其中即使当基板支撑架（6）具有低转数时，也可以确保均匀的沉积量几个旋转到几十个旋转，并且沉积量非常小，例如膜厚度为1nm以下。提供控制单元（11），以使用总共转数N和分数转数α的值的输入来执行控制，使得X = N +α（其中N是总的总转数，并且是正整数，α是分数旋转数，为正纯的十进制），通过输入沉积时间T，使得上述基板支撑保持架（6）的旋转速度V（rps）在溅射到上述基板（7）的表面上的颗粒的沉积时间T（秒）期间，当上述基板支撑保持器（6）的总转数为X时，满足V·T = N +α，其中电影将要成立。

4. 发明授权

US07727409B2 Magnetoresistance effect device and method of production thereof 有权
标题翻译：磁阻效应装置及其制造方法
公开(公告)号：US07727409B2
公开(公告)日：2010-06-01
申请号：US12117753
申请日：2008-05-09
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
IPC分类号： B44C1/22 , G11B5/84
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译：制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。用于微处理的两个掩模层被叠加起来。制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质，以及根据该方法制造的装置。

5. 发明授权

US08932438B2 Method of manufacturing magnetoresistive element, sputter deposition chamber, apparatus for manufacturing magnetoresistive element having sputter deposition chamber, program and storage medium 有权
标题翻译：制造磁阻元件的方法，溅射沉积室，用于制造具有溅射沉积室的磁阻元件的装置，程序和存储介质
公开(公告)号：US08932438B2
公开(公告)日：2015-01-13
申请号：US12972823
申请日：2010-12-20
申请人： Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
发明人： Koji Tsunekawa , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
IPC分类号： C23C14/34 , G11B5/39 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/22 , G01R33/09 , H01F10/32 , H01F41/18 , H01F41/30 , H01L43/12 , G11B5/31
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译：自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。

6. 发明授权

US08394649B2 Method of production of a magnetoresistance effect device 有权
标题翻译：制造磁阻效应器件的方法
公开(公告)号：US08394649B2
公开(公告)日：2013-03-12
申请号：US11969049
申请日：2008-01-03
申请人： David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
发明人： David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
IPC分类号： H01L21/00
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
摘要翻译：一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层定向纹理结构。

7. 发明申请

US20110139606A1 METHOD OF MANUFACTURING MAGNETORESISTIVE ELEMENT, SPUTTER DEPOSITION CHAMBER, APPARATUS FOR MANUFACTURING MAGNETORESISTIVE ELEMENT HAVING SPUTTER DEPOSITION CHAMBER, PROGRAM AND STORAGE MEDIUM 有权
标题翻译：制造磁性元件，溅射沉积室的方法，用于制造具有溅射沉积室的磁性元件的装置，程序和存储介质
公开(公告)号：US20110139606A1
公开(公告)日：2011-06-16
申请号：US12972823
申请日：2010-12-20
申请人： Koji TSUNEKAWA , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
发明人： Koji TSUNEKAWA , Hiroyuki Hosoya , Yoshinori Nagamine , Shinji Furukawa , Naoki Watanabe
IPC分类号： C23C14/34 , C23C14/06
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , B82Y40/00 , C23C14/14 , C23C14/225 , C23C14/3464 , G01R33/093 , G01R33/098 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F10/325 , H01F10/3254 , H01F10/3272 , H01F41/18 , H01F41/302 , H01L43/12
摘要： The magnetic anisotropy of a magnetic layer in a spin valve tunnel magnetoresistive element or giant magnetoresistive element is enhanced. Deposition of the magnetic layer is performed by making sputtering particles obliquely incident on a substrate from a certain incident direction at a certain incident angle.
摘要翻译：自旋阀隧道磁阻元件或巨磁阻元件中的磁性层的磁各向异性增强。通过使溅射粒子以一定的入射角从特定的入射方向倾斜入射到基板上来进行磁性层的沉积。

8. 发明申请

US20110094875A1 MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION OF THE SAME 审中-公开
标题翻译：磁阻效应装置及其制造方法
公开(公告)号：US20110094875A1
公开(公告)日：2011-04-28
申请号：US12983514
申请日：2011-01-03
申请人： David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
发明人： David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
IPC分类号： C23C14/06 , C23C14/35
CPC分类号： H01L43/12 , B82Y25/00 , B82Y40/00 , C23C14/081 , C23C14/34 , G11C11/16 , G11C11/161 , H01F10/3204 , H01F10/3254 , H01F41/18 , H01F41/307 , H01L43/08
摘要： A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
摘要翻译：一种磁电阻效应器件，包括具有一对铁磁层和位于它们之间的阻挡层的多层结构，其中至少一个铁磁层至少具有与阻挡层接触的部分为非晶形，阻挡层是具有高度磁化强度的MgO层定向纹理结构。

9. 发明授权

US07652852B2 Magnetoresistance effect device and a preform therefor 有权
标题翻译：磁阻效应器件及其预型件
公开(公告)号：US07652852B2
公开(公告)日：2010-01-26
申请号：US11161675
申请日：2005-08-11
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译：制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。用于微处理的两个掩模层被叠加起来。制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质，以及根据该方法制造的装置。

10. 发明申请

US20080217289A1 MAGNETORESISTANCE EFFECT DEVICE AND METHOD OF PRODUCTION THEREOF 有权
标题翻译：磁阻效应装置及其生产方法
公开(公告)号：US20080217289A1
公开(公告)日：2008-09-11
申请号：US12117753
申请日：2008-05-09
申请人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
发明人： Hiroki Maehara , Tomoaki Osada , Mihoko Doi , Koji Tsunekawa , Naoki Watanabe
IPC分类号： B44C1/22 , G11B5/84
CPC分类号： H01L43/12 , H01L43/08 , Y10T428/1121 , Y10T428/1143 , Y10T428/1164 , Y10T428/1171
摘要： A method of production of a magnetoresistance effect device is able to prevent or minimize a drop in the MR ratio and maintain the high performance of the magnetoresistance effect device even if forming an oxide layer as a surface-most layer constituting a protective layer by the oxidation process inevitably included in the process of production of microprocessing by dry etching performed in a vacuum. Two mask layers used for microprocessing are doubly piled up. This method of production of a magnetoresistivity effect device including a magnetic multilayer film including at least two magnetic layers includes a step of providing under a first mask material that is a nonorganic material a second mask material able to react with other atoms to form a conductive substance, and a device made according to the method.
摘要翻译：制造磁阻效应器件的方法能够防止或最小化MR比的下降并且保持磁阻效应器件的高性能，即使通过氧化形成作为构成保护层的最表层的氧化物层在真空中进行干法蚀刻的微加工生产过程中不可避免地包含这一过程。用于微处理的两个掩模层被叠加起来。制造包括至少两个磁性层的磁性多层膜的磁阻效应器的这种制造方法包括在第一掩模材料下面提供作为无机材料的第二掩模材料的步骤，第二掩模材料能够与其它原子反应以形成导电物质，以及根据该方法制造的装置。

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