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1. 发明申请

US20060045130A1 Low-level communication layers and device employing same 有权
标题翻译：低层通信层和采用相同的设备
公开(公告)号：US20060045130A1
公开(公告)日：2006-03-02
申请号：US11187762
申请日：2005-07-22
申请人： Han-gyoo Kim , Kyung Kim , Il-gu Hong , Jung Ahn , Jun Park , Han Lim
发明人： Han-gyoo Kim , Kyung Kim , Il-gu Hong , Jung Ahn , Jun Park , Han Lim
IPC分类号： H04J3/16 , H04J3/22
CPC分类号： H04L63/08 , H04L1/16 , H04L1/1685 , H04L1/1809 , H04L1/188 , H04L69/22 , H04L69/32 , H04L69/325
摘要： An electronic device employing an efficient network protocol stack. The protocol stack comprises a network-level protocol layer configured to provide a transmission service for transferring data to and from a computer network, and a device-level protocol layer configured to send and receive information specific to an interface of the electronic device over the network via the transmission service of the network-level protocol layer. Alternately, each of the network-level protocol layer and the device-level protocol layer may be employed individually with other network protocol layers to construct a functioning network protocol stack.
摘要翻译：一种采用高效网络协议栈的电子设备。协议栈包括网络级协议层，被配置为提供用于向计算机网络传送数据和从计算机网络传送数据的传输服务;以及设备级协议层，被配置为通过网络发送和接收特定于电子设备的接口的信息通过网络层协议层的传输业务。或者，网络级协议层和设备级协议层中的每一个可以与其他网络协议层单独使用以构建功能性网络协议栈。

2. 发明申请

US20060011813A1 Image sensor having a passivation layer exposing at least a main pixel array region and methods of fabricating the same 有权
公开(公告)号：US20060011813A1
公开(公告)日：2006-01-19
申请号：US11044135
申请日：2005-01-27
申请人： Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang
发明人： Young Park , Ki Kim , Bum Kim , Jeong Bae , Yu Ahn , Jung Ahn , Soo Lee , Yong Lee , Sung Hwang
IPC分类号： H01L27/00
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14645 , H01L27/14685
摘要： A CMOS image sensor with improved sensitivity includes a main pixel array region of an active pixel array region formed on a semiconductor substrate. A passivation layer is formed over the sensor, and it is at least partially removed from the main pixel array region, such that incident light being detected by the main pixel array does not pass through the passivation layer. Optical absorption and refraction caused by the material of the passivation layer are eliminated, resulting in an image sensor with improved optical sensitivity.

3. 发明申请

US20070285519A1 Method For Transferring Image Signals And System Using The Method 审中-公开
标题翻译：使用该方法传输图像信号和系统的方法
公开(公告)号：US20070285519A1
公开(公告)日：2007-12-13
申请号：US11577532
申请日：2005-09-15
申请人： Jung Ahn , Sung Kang
发明人： Jung Ahn , Sung Kang
IPC分类号： H04N5/228
CPC分类号： H04N5/76 , H04N7/181
摘要： The present invention relates to an image signal transmission method in a network camera system, and more particularly, to a network camera system and an image signal transmission method in which a low resolution image formed by down-scaling a high resolution image photographed by a high resolution camera is displayed via a display means of a DVR system, and the high resolution image is compressed to be stored in a memory means of the DVR system, thereby preventing overload on the system that may occur due to compressing, transmitting, or decompressing a plurality of high resolution image signals. The network camera system including: a high resolution image photographing unit photographing an object to generate a high resolution image signal; an A/D converter converting the high resolution image signal into a digital image signal; an image signal compression unit receiving the digital image signals from the A/D conversion unit and generating a first image signal by compressing the digital image signal in high resolution; a network interface unit connected to a predetermined network cable, for transmitting the first image signal to a predetermined DVR system connected by the network cable; a down-scaling unit receiving the digital image signal from the A/D conversion unit and generating a second image signal by down-scaling the digital image signal; an image signal encoding unit converting the second image signal into an analog signal to be encoded to a second analog image signal; and an interface unit transmitting the first image signal and the second analog image signal to the DVR system.
摘要翻译：本发明涉及一种网络摄像机系统中的图像信号传输方法，更具体地说，涉及一种网络摄像机系统和图像信号传输方法，其中通过降低高分辨率图像的高分辨率图像而形成的低分辨率图像通过DVR系统的显示装置显示分辨率摄像机，并且高分辨率图像被压缩以存储在DVR系统的存储装置中，从而防止由于压缩，发送或解压缩而可能发生的系统过载多个高分辨率图像信号。该网络摄像机系统包括：高分辨率图像拍摄单元拍摄对象以产生高分辨率图像信号; 将高分辨率图像信号转换为数字图像信号的A / D转换器; 图像信号压缩单元，从A / D转换单元接收数字图像信号，并通过以高分辨率压缩数字图像信号产生第一图像信号; 连接到预定网络电缆的网络接口单元，用于将第一图像信号发送到由网络电缆连接的预定DVR系统; 缩小单元，从A / D转换单元接收数字图像信号，并通过对数字图像信号进行缩小来产生第二图像信号; 图像信号编码单元，将第二图像信号转换为要被编码的模拟信号到第二模拟图像信号; 以及将第一图像信号和第二模拟图像信号发送到DVR系统的接口单元。

4. 发明申请

US20050101089A1 Method of manufacturing a flash memory cell using a self-aligned floating gate 失效
公开(公告)号：US20050101089A1
公开(公告)日：2005-05-12
申请号：US11004301
申请日：2004-12-03
申请人： Jum Kim , Sung Jung , Jung Ahn , Young Shin , Young Lee
发明人： Jum Kim , Sung Jung , Jung Ahn , Young Shin , Young Lee
IPC分类号： H01L21/762 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792 , H01L21/44 , H01L21/336
CPC分类号： H01L27/11521 , H01L21/76235
摘要： A method of manufacturing a flash memory cell. The method includes controlling a wall sacrificial oxidization process, a wall oxidization process and a cleaning process of a trench insulating film that are performed before/after a process of forming the trench insulating film for burying a trench to etch the trench insulating film to a desired space. Therefore, it is possible to secure the coupling ratio of a floating gate by maximum and implement a device of a smaller size.

5. 发明申请

US20070166918A1 NON-VOLATILE MEMORY DEVICE, AND MANUFACTURING METHOD AND PROGRAMMING METHOD THEREOF 审中-公开
标题翻译：非易失性存储器件及其制造方法及其编程方法
公开(公告)号：US20070166918A1
公开(公告)日：2007-07-19
申请号：US11618585
申请日：2006-12-29
申请人： Sang Hyun Oh , Jung Ahn , II Young Kwon
发明人： Sang Hyun Oh , Jung Ahn , II Young Kwon
IPC分类号： G11C16/04 , H01L29/788 , H01L21/336
CPC分类号： H01L27/115 , G11C16/0483 , H01L27/11521 , H01L27/11524
摘要： A non-volatile memory device includes a plurality of select lines and a plurality of word lines formed over a semiconductor substrate, a contact plug formed between the select lines, and a conductive interference shielding line formed between the select line and a word line adjacent to the select line and isolated from the semiconductor substrate. A method of manufacturing a non-volatile memory device includes the steps of providing a semiconductor substrate in which a plurality of select lines and a plurality of word lines are formed, forming a first insulating layer over the semiconductor substrate including the select lines and the word lines, removing the first insulating layer between the select lines, forming a conductive interference shielding line over the first insulating layer between the select line and a word line adjacent to the select line, forming a second insulating layer over the semiconductor substrate including the conductive interference shielding line, etching the second insulating layer to expose the semiconductor substrate and the conductive interference shielding line between the select lines, thus forming a contact hole, and forming a contact plug within the contact hole.
摘要翻译：非易失性存储器件包括多个选择线和形成在半导体衬底上的多个字线，形成在选择线之间的接触插塞和形成在选择线和与之相邻的字线之间的导电干扰屏蔽线选择线并与半导体衬底分离。一种制造非易失性存储器件的方法包括以下步骤：提供半导体衬底，其中形成多条选择线和多条字线，在包括选择线和字的半导体衬底之上形成第一绝缘层在所述选择线之间移除所述第一绝缘层，在所述选择线和与所述选择线相邻的字线之间的所述第一绝缘层上方形成导电干扰屏蔽线，在所述半导体衬底上形成包括所述导电干扰的第二绝缘层蚀刻第二绝缘层以暴露半导体衬底和选择线之间的导电干扰屏蔽线，从而形成接触孔，并在接触孔内形成接触插塞。

6. 发明申请

US20060076886A1 Encapsulation cap and display device using the same 有权
标题翻译：封装盖和使用其的显示装置
公开(公告)号：US20060076886A1
公开(公告)日：2006-04-13
申请号：US11245025
申请日：2005-10-07
申请人： Jung Ahn
发明人： Jung Ahn
IPC分类号： H05B33/04 , H05B33/00
CPC分类号： H01L51/524 , H01L25/048 , H01L27/3267 , H01L27/3286 , H01L51/5259 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses an encapsulation cap which not only seals simultaneously structural elements formed on two substrates but also has sufficient moisture-absorbing function by using only one getter (moisture absorbent) attached thereto, and a display device using the same. For separating structural elements formed on the glass substrate from the exterior, an encapsulation cap according to the present invention comprises a first surface on which a first recess is formed; and a second surface which is opposite to the first surface and has a second recess formed thereon, wherein the first surface is attached to a first substrate on which structural elements are formed, the second surface is attached to a second substrate on which structural elements are formed, and the structural elements formed on the first and second substrates are received in the first and second recess, respectively.
摘要翻译：本发明公开了一种封装盖，其不仅同时密封了形成在两个基板上的结构元件，而且通过仅使用一个吸附剂（吸湿剂）附着在其上也具有足够的吸湿功能，以及使用其的显示装置。为了将形成在玻璃基板上的结构元件与外部分离，根据本发明的封装盖包括形成第一凹部的第一表面; 以及第二表面，其与所述第一表面相对并且具有形成在其上的第二凹部，其中所述第一表面附接到其上形成有结构元件的第一基板，所述第二表面附接到第二基板，其上结构元件为并且形成在第一和第二基板上的结构元件分别容纳在第一和第二凹部中。

7. 发明申请

US20070178237A1 Method for patterning coatings 审中-公开
标题翻译：图案涂层方法
公开(公告)号：US20070178237A1
公开(公告)日：2007-08-02
申请号：US11496026
申请日：2006-07-31
申请人： Dong Shin , Ji Kim , Dae Kim , Sung Kim , Kyung Choi , Hee Park , Jung Ahn , Jae Choi , Sang Yoo , Yoon Heo , Han Kim , Jeong Yoon
发明人： Dong Shin , Ji Kim , Dae Kim , Sung Kim , Kyung Choi , Hee Park , Jung Ahn , Jae Choi , Sang Yoo , Yoon Heo , Han Kim , Jeong Yoon
IPC分类号： B05D5/00 , B05D3/12 , B05C1/00
CPC分类号： G03F7/0002 , B41M3/003 , B41M3/16 , B82Y10/00 , B82Y40/00 , G02F1/1303 , G02F1/1333 , G02F1/133516 , H01L27/1292
摘要： The invention provides a method for patterning coatings which includes the steps of: a) applying coatings onto a flat plate; b) allowing the coatings applied to the flat plate to contact with protrusions of a substrate so as to transfer portions of the coatings on the flat plate which contact with the protrusions of the substrate to the protrusions of the substrate from the flat plate, the substrate having unevenness formed with the protrusions and grooves; and c) allowing the coatings remaining on the flat plate or on the protrusions of the substrate to contact with a print surface of a print object so as to transfer the coatings to the print object. The method has simple processes, and ensures high precision and high speed in patterning functional materials, preferalby, electronic materials.
摘要翻译：本发明提供一种用于图案化涂层的方法，其包括以下步骤：a）将涂层施加到平板上; b）允许施加到平板的涂层与基板的突起接触，以便将与基板的突起接触的平板上的涂层的一部分从平板，基板具有由突起和槽形成的凹凸; 以及c）允许残留在平板上或基板的突起上的涂层与印刷对象的印刷表面接触，以便将涂层转移到印刷对象。该方法工艺简单，确保了功能材料图案的高精度和高速度，优选电子材料。

8. 发明申请

US20070010089A1 Method of forming bit line of semiconductor device 审中-公开
标题翻译：形成半导体器件位线的方法
公开(公告)号：US20070010089A1
公开(公告)日：2007-01-11
申请号：US11482134
申请日：2006-07-05
申请人： Jung Ahn , Seok Lee
发明人： Jung Ahn , Seok Lee
IPC分类号： H01L21/4763
CPC分类号： H01L21/76849 , H01L21/76802 , H01L21/76883 , H01L27/1052
摘要： A method of forming a semiconductor device includes forming a contact hole in a first interlayer insulating layer that is provided on a semiconductor substrate. The contact hole has a sidewall defined by the first interlayer insulating layer. A first conductive layer is provided within the contact hole. The first conductive layer directly contacts the first interlayer insulating layer that defines the sidewall of the contact hole. The first conductive layer is etched to define a recess within the contact hole, the recess being provided directly above the first conductive layer. An interface metal layer is provided within the recess. A second interlayer insulating layer is formed on the interface metal layer. The second interlayer insulating layer is etched to expose the interface metal layer. A second conductive layer is deposited on the exposed interface metal layer to form a bit line.
摘要翻译：形成半导体器件的方法包括在设置在半导体衬底上的第一层间绝缘层中形成接触孔。接触孔具有由第一层间绝缘层限定的侧壁。第一导电层设置在接触孔内。第一导电层直接接触限定接触孔的侧壁的第一层间绝缘层。第一导电层被蚀刻以在接触孔内限定凹部，该凹部直接设置在第一导电层的上方。在凹槽内设有界面金属层。在界面金属层上形成第二层间绝缘层。蚀刻第二层间绝缘层以暴露界面金属层。第二导电层沉积在暴露的界面金属层上以形成位线。

9. 发明申请

US20060252257A1 Method of forming isolation structure of semiconductor device 失效
标题翻译：形成半导体器件隔离结构的方法
公开(公告)号：US20060252257A1
公开(公告)日：2006-11-09
申请号：US11416738
申请日：2006-05-02
申请人： Jung Ahn , Byung Park
发明人： Jung Ahn , Byung Park
IPC分类号： H01L21/4763
CPC分类号： H01L21/76232
摘要： A method of forming a semiconductor device includes etching a semiconductor substrate to form a first trench having a first width and a first depth; etching the semiconductor substrate to form a second trench having a second width and a second depth, the second trench overlapping the first trench, the second width being greater than the first width, the second depth being less than the first depth, whereby a trench having a dual structure is formed; and forming a first isolation structure within the trench having the dual structure. An embodiment of the present invention relates to a method of forming an isolation structure of a semiconductor device.
摘要翻译：形成半导体器件的方法包括蚀刻半导体衬底以形成具有第一宽度和第一深度的第一沟槽; 蚀刻所述半导体衬底以形成具有第二宽度和第二深度的第二沟槽，所述第二沟槽与所述第一沟槽重叠，所述第二宽度大于所述第一宽度，所述第二深度小于所述第一深度，由此具有形成双重结构; 以及在具有双重结构的沟槽内形成第一隔离结构。本发明的实施例涉及一种形成半导体器件的隔离结构的方法。

10. 发明申请

US20070087538A1 Method of manufacturing nand flash memory device 失效
标题翻译：制造nand闪存设备的方法
公开(公告)号：US20070087538A1
公开(公告)日：2007-04-19
申请号：US11446475
申请日：2006-06-02
申请人： Jum Kim , Jung Ahn
发明人： Jum Kim , Jung Ahn
IPC分类号： H01L21/44
CPC分类号： H01L27/11524 , H01L21/76897 , H01L27/115 , H01L27/11521
摘要： A method of manufacturing a NAND flash memory device, including the steps of forming gates over a semiconductor substrate; forming a junction region over the semiconductor substrate between the gates; forming a buffer oxide film on the gates and the semiconductor substrate; stripping the buffer oxide film at one side of the gates; forming a nitride film spacers over the sidewalls of the gates; forming a self-aligned contact process (SAC) nitride film and an insulating film over the entire structure; etching regions of the insulating film and the SAC nitride film to form a contact through which the junction region is exposed; and forming a conductive film to bury the contact, thereby forming a contact plug.
摘要翻译：一种制造NAND闪存器件的方法，包括在半导体衬底上形成栅极的步骤; 在所述栅极之间的所述半导体衬底上形成结区; 在栅极和半导体衬底上形成缓冲氧化膜; 剥离栅极一侧的缓冲氧化膜; 在栅极的侧壁上形成氮化物膜间隔物; 在整个结构上形成自对准接触工艺（SAC）氮化物膜和绝缘膜; 蚀刻绝缘膜和SAC氮化物膜的区域，以形成接合区域暴露的触点; 并形成导电膜以埋置接触，从而形成接触塞。

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