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1. 发明申请

US20100009526A1 FABRICATION METHOD AND FABRICATION APPARATUS OF GROUP III NITRIDE CRYSTAL SUBSTANCE 有权
标题翻译：第III组氮化物晶体的制造方法和制造装置
公开(公告)号：US20100009526A1
公开(公告)日：2010-01-14
申请号：US12540492
申请日：2009-08-13
申请人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
发明人： Hitoshi KASAI , Takuji OKAHISA , Shunsuke FUJITA , Naoki MATSUMOTO , Hideyuki IJIRI , Fumitaka SATO , Kensaku MOTOKI , Seiji NAKAHATA , Koji UEMATSU , Ryu HIROTA
IPC分类号： H01L21/203
CPC分类号： H01L21/02617 , C23C16/303 , C23C16/4405 , C23C16/4488 , C30B23/02 , C30B25/02 , C30B29/403
摘要： A fabrication method of a group III nitride crystal substance includes the steps of cleaning the interior of a reaction chamber by introducing HCl gas into the reaction chamber, and vapor deposition of a group III nitride crystal substance in the cleaned reaction chamber. A fabrication apparatus of a group III nitride crystal substance includes a configuration to introduce HCl gas into the reaction chamber, and a configuration to grow a group III nitride crystal substance by HVPE. Thus, a fabrication method of a group III nitride crystal substance including the method of effectively cleaning deposits adhering inside the reaction chamber during crystal growth, and a fabrication apparatus employed in the fabrication method are provided.
摘要翻译： III族氮化物晶体物质的制造方法包括以下步骤：通过将HCl气体引入反应室来清洗反应室的内部，并将III族氮化物结晶物质气相沉积在清洁的反应室中。 III族氮化物晶体物质的制造装置包括将HCl气体引入反应室的结构，以及通过HVPE生长III族氮化物结晶物质的结构。因此，提供了包括在晶体生长期间有效清洁附着在反应室内的沉积物的方法的III族氮化物晶体物质的制造方法以及制造方法中使用的制造装置。

2. 发明申请

US20080296585A1 GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE 失效
标题翻译： GaN晶体和GaN晶体衬底的生长方法
公开(公告)号：US20080296585A1
公开(公告)日：2008-12-04
申请号：US12130082
申请日：2008-05-30
申请人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
发明人： Naoki MATSUMOTO , Fumitaka Sato , Seiji Nakahata , Takuji Okahisa , Koji Uematsu
IPC分类号： H01L29/207 , H01L21/205
CPC分类号： C30B29/406 , C30B25/20
摘要： A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate.
摘要翻译：制造GaN晶体的方法涉及在GaN晶种衬底上生长GaN晶体。该方法包括以下步骤：制备包括第一掺杂剂的GaN籽晶衬底，使得GaN晶种衬底的热膨胀系数变得大于GaN晶体的热膨胀系数，并将GaN晶体生长至至少1mm的厚度在GaN晶种衬底上。因此，可以提供一种能够抑制裂纹的产生和生长厚GaN的晶体的GaN晶体的制造方法以及GaN晶体基板。

3. 发明申请

US20110121311A1 METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE 审中-公开
标题翻译：用于制造半导体衬底的方法，制造半导体器件的方法，半导体衬底和半导体器件
公开(公告)号：US20110121311A1
公开(公告)日：2011-05-26
申请号：US12943545
申请日：2010-11-10
申请人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
发明人： Fumitaka SATO , Akihiro HACHIGO , Naoki MATSUMOTO , Yoko MAEDA , Seiji NAKAHATA
IPC分类号： H01L29/12 , H01L21/18
CPC分类号： H01L21/2654 , H01L21/76254 , H01L29/045 , H01L29/2003 , H01L29/66143 , H01L29/872
摘要： The present invention provides a method for manufacturing a semiconductor substrate including a low-resistance nitride layer laminated on a substrate, a method for manufacturing a semiconductor device, a semiconductor substrate, and a semiconductor device. A method for manufacturing a semiconductor substrate of the present invention includes the following steps: A nitride substrate having a principal surface and a back surface opposite to the principal surface is prepared. Vapor-phase ions are implanted into the back surface of the nitride substrate. The back surface of the nitride substrate is bonded to a dissimilar substrate to form a bonded substrate. The nitride substrate is partially separated from the bonded substrate to form a laminated substrate including the dissimilar substrate and a nitride layer. The laminated substrate is heat-treated at a temperature over 700° C.
摘要翻译：本发明提供了一种制造半导体衬底的方法，该半导体衬底包括层叠在衬底上的低电阻氮化物层，半导体器件的制造方法，半导体衬底和半导体器件。本发明的半导体衬底的制造方法包括以下步骤：准备具有与主面相反的主面和背面的氮化物衬底。气相离子注入到氮化物衬底的背表面中。氮化物衬底的背面与不同的衬底接合以形成键合衬底。氮化物衬底与键合衬底部分地分离以形成包括不同衬底和氮化物层的叠层衬底。层压基板在700℃以上的温度下进行热处理

4. 发明申请

US20130002069A1 MOTOR 有权
标题翻译：发动机
公开(公告)号：US20130002069A1
公开(公告)日：2013-01-03
申请号：US13533354
申请日：2012-06-26
申请人： Naoki MATSUMOTO
发明人： Naoki MATSUMOTO
IPC分类号： H02K11/00
CPC分类号： H02K11/026 , H02K5/225
摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.
摘要翻译：电动机的轭具有底部和开口端，并且容纳电枢。端部支架基本上封闭轭的开口端。在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

5. 发明申请

US20110043250A1 DRIVER CIRCUIT 失效
标题翻译：驱动电路
公开(公告)号：US20110043250A1
公开(公告)日：2011-02-24
申请号：US12858295
申请日：2010-08-17
申请人： Yuji KUWANA , Naoki MATSUMOTO , Yasuhiro URABE
发明人： Yuji KUWANA , Naoki MATSUMOTO , Yasuhiro URABE
IPC分类号： H03K19/082 , H03K19/0175
CPC分类号： H03K19/001 , H03K17/04126 , H03K19/0136 , H03K2217/0036
摘要： A level switch circuit receives a digital input signal, and generates a level signal having a voltage level that corresponds to the value of the input signal thus received. A buffer circuit receives a level signal, and outputs the level signal via an output terminal thereof. A bias current generating circuit generates a bias current including a DC component having a constant level and a variable component that changes according to the input signal, and supplies the bias current thus generated to a buffer circuit. The bias current generating circuit detects an edge of the input signal, and raises the bias current by a predetermined amount for a predetermined period of time after the edge thus detected.
摘要翻译：电平开关电路接收数字输入信号，并产生具有与所接收的输入信号的值对应的电压电平的电平信号。缓冲电路接收电平信号，并通过其输出端输出电平信号。偏置电流产生电路产生包括具有恒定电平的DC分量和根据输入信号而变化的可变分量的偏置电流，并将由此产生的偏置电流提供给缓冲电路。偏置电流产生电路检测输入信号的边缘，并且在如此检测到的边缘之后的预定时间段内将偏置电流提高预定量。

6. 发明申请

US20070227664A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 有权
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20070227664A1
公开(公告)日：2007-10-04
申请号：US11694083
申请日：2007-03-30
申请人： Naoki MATSUMOTO , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
发明人： Naoki MATSUMOTO , Yoshinobu Hayakawa , Hidetoshi Hanaoka , Noriaki Kodama , Chishio Koshimizu , Manabu Iwata , Satoshi Tanaka
IPC分类号： C23F1/00 , C23C16/00
CPC分类号： H01J37/32174 , H01J37/32091
摘要： A plasma processing apparatus includes a processing vessel capable of being vacuum evacuated; a first electrode disposed in the processing vessel in a state electrically floating via an insulating member or a space; a second electrode, arranged in the processing vessel to face and be in parallel to the first electrode with a specific interval, supporting a substrate to be processed; a processing gas supply unit for supplying a desired processing gas into a processing space surrounded by the first electrode, the second electrode and a sidewall of the processing vessel; and a first radio frequency power supply unit for applying a first radio frequency power to the second electrode to generate a plasma of the processing gas in the processing space. An electrostatic capacitance between the first electrode and the processing vessel is set such that a desired plasma density distribution is obtained for the generated plasma.
摘要翻译：一种等离子体处理装置，其特征在于，包括：真空抽真空处理容器; 以处于通过绝缘构件或空间电浮动的状态设置在处理容器中的第一电极; 第二电极，布置在处理容器中以特定间隔面对并平行于第一电极，支撑待处理的基板; 处理气体供给单元，用于将期望的处理气体供给到被处理容器的第一电极，第二电极和侧壁包围的处理空间中; 以及第一射频电源单元，用于向所述第二电极施加第一射频功率以在所述处理空间中产生所述处理气体的等离子体。第一电极和处理容器之间的静电电容被设定为使得所产生的等离子体获得期望的等离子体密度分布。

7. 发明申请

US20130061841A1 SAW WIRE AND METHOD OF MANUFACTURING GROUP III NITRIDE CRYSTAL SUBSTRATE USING THE SAME 审中-公开
标题翻译： SAW线及其制造使用其的III族氮化物晶体基板的方法
公开(公告)号：US20130061841A1
公开(公告)日：2013-03-14
申请号：US13590257
申请日：2012-08-21
申请人： Naoki MATSUMOTO , Hidenori Mikami
发明人： Naoki MATSUMOTO , Hidenori Mikami
IPC分类号： B28D5/04
CPC分类号： B23D61/185 , B24B27/0633 , H01L21/02024
摘要： A method of manufacturing a group III nitride crystal substrate slices a group III nitride crystal body with a saw wire which includes a steel wire having a carbon concentration of 0.90-0.95 mass %, a silicon concentration of 0.12-0.32 mass %, a manganese concentration of 0.40-0.90 mass %, a phosphorus concentration of 0.025 mass % or less, a sulfur concentration of 0.025 mass % or less, and a copper concentration of 0.20 mass % or less, and has a diameter of not less than 0.07 mm and less than 0.16 mm, a tensile strength at break of higher than 4200 N/mm2, and a curl size of 400 mm or more, with a tension of not less than 50% and not more than 65% of the tension at break applied to the saw wire. Thus, group III nitride crystal substrates with small warpage can be manufactured.
摘要翻译：一种III族氮化物晶体基板的制造方法，其特征在于，包括碳浓度为0.90〜0.95质量％，硅浓度为0.12〜0.32质量％的钢丝，锰浓度的浓度为0.40〜0.90质量％，磷浓度为0.025质量％以下，硫浓度为0.025质量％以下，铜浓度为0.20质量％以下，直径为0.07mm以下断裂强度高于4200N / mm2，卷曲尺寸为400mm以上，张力不小于断裂张力的50％以上且不大于65％锯线。因此，可以制造具有小翘曲的III族氮化物晶体基板。

8. 发明申请

US20110259524A1 CAPACITIVE COUPLING PLASMA PROCESSING APPARATUS AND METHOD FOR USING THE SAME 有权
标题翻译：电容耦合等离子体处理装置及其使用方法
公开(公告)号：US20110259524A1
公开(公告)日：2011-10-27
申请号：US13177195
申请日：2011-07-06
申请人： Naoki MATSUMOTO , Chishio Koshimizu , Akira Koshiishi
发明人： Naoki MATSUMOTO , Chishio Koshimizu , Akira Koshiishi
IPC分类号： H01L21/3065
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/334
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

9. 发明申请

US20110146565A1 GROUP III NITRIDE CRYSTAL AND METHOD FOR SURFACE TREATMENT THEREOF, GROUP III NITRIDE STACK AND MANUFACTURING METHOD THEREOF, AND GROUP III NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：第III组氮化物晶体及其表面处理方法，第III组氮化物堆积及其制造方法及其III族氮化物半导体器件及其制造方法
公开(公告)号：US20110146565A1
公开(公告)日：2011-06-23
申请号：US13037015
申请日：2011-02-28
申请人： Keiji ISHIBASHI , Naoki MATSUMOTO , Masato IRIKURA
发明人： Keiji ISHIBASHI , Naoki MATSUMOTO , Masato IRIKURA
IPC分类号： C30B19/00 , C30B23/02 , C30B25/02
CPC分类号： H01L21/02013 , C30B29/403 , C30B33/00 , H01L21/02024 , H01L24/32 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/00014 , H01L2924/00
摘要： A method for surface treatment of a group III nitride crystal includes the steps of lapping a surface of a group III nitride crystal using a hard abrasive grain with a Mohs hardness higher than 7, and abrasive-grain-free polishing the lapped surface of the group III nitride crystal using a polishing solution without containing abrasive grain, and the polishing solution without containing abrasive grain has a pH of not less than 1 and not more than 6, or not less than 8.5 and not more than 14. Accordingly, the method for surface treatment of a group III nitride crystal can be provided according to which hard abrasive grains remaining at the lapped crystal can be removed to reduce impurities at the crystal surface.
摘要翻译：用于III族氮化物晶体的表面处理的方法包括以下步骤：使用莫氏硬度高于7的硬磨粒研磨III族氮化物晶体的表面，并且对该组的研磨表面进行无磨粒抛光使用不含磨粒的研磨液的III族氮化物结晶，不含磨粒的研磨液的pH为1以上且6以下，8.5以下且14以下。因此，可以提供III族氮化物晶体的表面处理，根据该III族氮化物晶体的表面处理可以去除在研磨晶体上残留的硬磨粒以减少晶体表面的杂质。

10. 发明申请

US20080029385A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20080029385A1
公开(公告)日：2008-02-07
申请号：US11830309
申请日：2007-07-30
申请人： Chishio KOSHIMIZU , Naoki MATSUMOTO
发明人： Chishio KOSHIMIZU , Naoki MATSUMOTO
IPC分类号： B01J19/08
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
摘要翻译：等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线，将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器具有由射频功率提取装置提取的预定频率的射频功率。

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