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1. 发明申请

US20120025927A1 RF ISOLATION SWITCH CIRCUIT 有权
标题翻译：射频隔离开关电路
公开(公告)号：US20120025927A1
公开(公告)日：2012-02-02
申请号：US12883940
申请日：2010-09-16
申请人： Hongyan Yan , Janakiram Ganesh Sankaranarayanan , Bhushan Shanti Asuri , Himanshu Khatri , Vinod V. Panikkath
发明人： Hongyan Yan , Janakiram Ganesh Sankaranarayanan , Bhushan Shanti Asuri , Himanshu Khatri , Vinod V. Panikkath
IPC分类号： H01P1/10 , H03K17/687 , H03K17/00 , H01L21/336
CPC分类号： H03K17/063 , H03K17/161 , H03K17/687 , H03K2017/066 , H03K2217/0018 , H03K2217/0054
摘要： In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.
摘要翻译：在第一方面，RF开关包括主晶体管和栅极至源极短路电路。当RF开关关闭时，栅极 - 源极短路电路导通，将主晶体管的源极和栅极连接在一起，从而防止Vgs发展，导致主晶体管泄漏。当RF开关导通时，栅极至源极短路电路被关闭，以使源极与栅极分离。门提供数字逻辑高电压来接通主晶体管。在第二方面，RF开关包括具有大容量端子的主晶体管。当RF开关关闭时，体积通过高电阻连接到地。当RF开关导通时，源极和体积短路在一起，从而降低了主晶体管的阈值电压。

2. 发明授权

US08514008B2 RF isolation switch circuit 有权
标题翻译：射频隔离开关电路
公开(公告)号：US08514008B2
公开(公告)日：2013-08-20
申请号：US12883940
申请日：2010-09-16
申请人： Hongyan Yan , Janakiram Ganesh Sankaranarayanan , Bhushan Shanti Asuri , Himanshu Khatri , Vinod V. Panikkath
发明人： Hongyan Yan , Janakiram Ganesh Sankaranarayanan , Bhushan Shanti Asuri , Himanshu Khatri , Vinod V. Panikkath
IPC分类号： H03K17/687
CPC分类号： H03K17/063 , H03K17/161 , H03K17/687 , H03K2017/066 , H03K2217/0018 , H03K2217/0054
摘要： In a first aspect, an RF switch includes a main transistor and a gate-to-source shorting circuit. When the RF switch is turned off, the gate-to-source shorting circuit is turned on to short the source and gate of the main transistor together, thereby preventing a Vgs from developing that would cause the main transistor to leak. When the RF switch is turned on, the gate-to-source shorting circuit is turned off to decouple the source from the gate. The gate is supplied with a digital logic high voltage to turn on the main transistor. In a second aspect, an RF switch includes a main transistor that has a bulk terminal. When the RF switch is turned off, the bulk is connected to ground through a high resistance. When the RF switch is turned on, the source and bulk are shorted together thereby reducing the threshold voltage of the main transistor.
摘要翻译：在第一方面，RF开关包括主晶体管和栅极至源极短路电路。当RF开关关闭时，栅极 - 源极短路电路导通，将主晶体管的源极和栅极连接在一起，从而防止Vgs发展，导致主晶体管泄漏。当RF开关导通时，栅极至源极短路电路被关闭，以使源极与栅极分离。门提供数字逻辑高电压来接通主晶体管。在第二方面，RF开关包括具有大容量端子的主晶体管。当RF开关关闭时，体积通过高电阻连接到地。当RF开关导通时，源极和体积短路在一起，从而降低了主晶体管的阈值电压。

3. 发明申请

US20120135698A1 PROGRAMMABLE ATTENUATOR 有权
标题翻译：可编程衰减器
公开(公告)号：US20120135698A1
公开(公告)日：2012-05-31
申请号：US12957247
申请日：2010-11-30
申请人： Hongyan Yan , Bhushan Shanti Asuri , Vinod V. Panikkath , Janakiram G. Sankaranarayanan , Himanshu Khatri
发明人： Hongyan Yan , Bhushan Shanti Asuri , Vinod V. Panikkath , Janakiram G. Sankaranarayanan , Himanshu Khatri
IPC分类号： H04W52/00
CPC分类号： H03H7/24
摘要： Disclosed are circuits, techniques and methods for implementing an attenuator in a signal transmission path. In one particular implementation, an attenuation may be adjusted based, at least in part, on a control signal. In another implementation, such an attenuation may be adjusted in coarse increments by varying one or more gate voltages applied one or more transistors. In yet another implementation, adjusting said attenuation in fine increments by varying a bias voltage applied to at least one level shifter.
摘要翻译：公开了用于在信号传输路径中实现衰减器的电路，技术和方法。在一个特定实现中，可以至少部分地基于控制信号来调整衰减。在另一实现中，可以通过改变施加一个或多个晶体管的一个或多个栅极电压来以粗略增量来调整这种衰减。在又一实施方案中，通过改变施加到至少一个电平移位器的偏置电压来以微小增量来调节所述衰减。

4. 发明授权

US08903344B2 Programmable attenuator 有权
标题翻译：可编程衰减器
公开(公告)号：US08903344B2
公开(公告)日：2014-12-02
申请号：US12957247
申请日：2010-11-30
申请人： Hongyan Yan , Bhushan Shanti Asuri , Vinod V Panikkath , Janakiram G Sankaranarayanan , Himanshu Khatri
发明人： Hongyan Yan , Bhushan Shanti Asuri , Vinod V Panikkath , Janakiram G Sankaranarayanan , Himanshu Khatri
IPC分类号： H04B1/06 , H03H7/24
CPC分类号： H03H7/24
摘要： Disclosed are circuits, techniques and methods for implementing an attenuator in a signal transmission path. In one particular implementation, an attenuation may be adjusted based, at least in part, on a control signal. In another implementation, such an attenuation may be adjusted in coarse increments by varying one or more gate voltages applied one or more transistors. In yet another implementation, adjusting said attenuation in fine increments by varying a bias voltage applied to at least one level shifter.
摘要翻译：公开了用于在信号传输路径中实现衰减器的电路，技术和方法。在一个特定实现中，可以至少部分地基于控制信号来调整衰减。在另一实现中，可以通过改变施加一个或多个晶体管的一个或多个栅极电压来以粗略增量来调整这种衰减。在又一实施方案中，通过改变施加到至少一个电平移位器的偏置电压来以微小增量来调节所述衰减。

5. 发明申请

US20120013387A1 WIDEBAND BALUN HAVING A SINGLE PRIMARY AND MULTIPLE SECONDARIES 有权
标题翻译：宽带巴伦拥有单一主和多个二级
公开(公告)号：US20120013387A1
公开(公告)日：2012-01-19
申请号：US12836779
申请日：2010-07-15
申请人： Janakiram G. Sankaranarayanan , Bhushan S. Asuri , Vinod V. Panikkath , Hongyan Yan , Himanshu Khatri , Maulin Bhagat
发明人： Janakiram G. Sankaranarayanan , Bhushan S. Asuri , Vinod V. Panikkath , Hongyan Yan , Himanshu Khatri , Maulin Bhagat
IPC分类号： G06G7/12
CPC分类号： H03D7/1441 , H03D7/1458 , H03D7/165 , H03D2200/0023 , H03H7/1775 , H03H7/422 , H03H7/465
摘要： An RF transmitter capable of transmitting over a wide range of frequencies includes a mixer, a wideband high-Q balun, a first driver amplifier and a second driver amplifier. The balun has a single primary winding and two secondary windings. A differential output of the mixer is coupled to the primary winding. A first of the two secondary windings is coupled to drive the first driver amplifier. A second of the two secondary windings is coupled to drive the second driver amplifier. One driver amplifier is used when transmitting at lower frequencies whereas the other driver amplifier is used when transmitting at higher frequencies. By appropriate sizing of the inductances of the secondary windings and by switching out one of the secondary windings at certain times, the balun is tunable to operate over the wide frequency range while having a high quality factor Q, thereby facilitating reduced power consumption while simultaneously meeting performance requirements.
摘要翻译：能够在宽频率范围内发射的RF发射机包括混频器，宽带高Q平衡 - 不平衡变换器，第一驱动器放大器和第二驱动器放大器。平衡 - 不平衡转换器具有单个初级绕组和两个次级绕组。混频器的差分输出耦合到初级绕组。两个次级绕组中的第一个被耦合以驱动第一驱动放大器。两个次级绕组中的第二个被耦合以驱动第二个驱动放大器。当以较低频率发射时使用一个驱动放大器，而在较高频率下传输时使用另一个驱动放大器。通过适当地确定次级绕组的电感和通过在某些时间切换出一个次级绕组，平衡 - 不平衡变换器可以在宽频率范围内工作，同时具有高品质因数Q，从而有助于降低功耗，同时满足性能要求。

6. 发明授权

US08493126B2 Wideband balun having a single primary and multiple secondaries 有权
标题翻译：宽带平衡 - 不平衡变换器具有单个主要和多个次要功能
公开(公告)号：US08493126B2
公开(公告)日：2013-07-23
申请号：US12836779
申请日：2010-07-15
申请人： Janakiram G. Sankaranarayanan , Bhushan S. Asuri , Vinod V. Panikkath , Hongyan Yan , Himanshu Khatri , Maulin Bhagat
发明人： Janakiram G. Sankaranarayanan , Bhushan S. Asuri , Vinod V. Panikkath , Hongyan Yan , Himanshu Khatri , Maulin Bhagat
IPC分类号： G06G7/12
CPC分类号： H03D7/1441 , H03D7/1458 , H03D7/165 , H03D2200/0023 , H03H7/1775 , H03H7/422 , H03H7/465
摘要： An RF transmitter capable of transmitting over a wide range of frequencies includes a mixer, a wideband high-Q balun, a first driver amplifier and a second driver amplifier. The balun has a single primary winding and two secondary windings. A differential output of the mixer is coupled to the primary winding. A first of the two secondary windings is coupled to drive the first driver amplifier. A second of the two secondary windings is coupled to drive the second driver amplifier. One driver amplifier is used when transmitting at lower frequencies whereas the other driver amplifier is used when transmitting at higher frequencies. By appropriate sizing of the inductances of the secondary windings and by switching out one of the secondary windings at certain times, the balun is tunable to operate over the wide frequency range while having a high quality factor Q, thereby facilitating reduced power consumption while simultaneously meeting performance requirements.
摘要翻译：能够在宽频率范围内发射的RF发射机包括混频器，宽带高Q平衡 - 不平衡变换器，第一驱动器放大器和第二驱动器放大器。平衡 - 不平衡转换器具有单个初级绕组和两个次级绕组。混频器的差分输出耦合到初级绕组。两个次级绕组中的第一个被耦合以驱动第一驱动放大器。两个次级绕组中的第二个被耦合以驱动第二个驱动放大器。当以较低频率发射时使用一个驱动放大器，而在较高频率下传输时使用另一个驱动放大器。通过适当地确定次级绕组的电感和通过在某些时间切换出一个次级绕组，平衡 - 不平衡变换器可以在宽频率范围内工作，同时具有高品质因数Q，从而有助于降低功耗，同时满足性能要求。

7. 发明授权

US08515362B2 Mixer architectures 有权
标题翻译：混音架构
公开(公告)号：US08515362B2
公开(公告)日：2013-08-20
申请号：US12538775
申请日：2009-08-10
申请人： Himanshu Khatri , Li Liu
发明人： Himanshu Khatri , Li Liu
IPC分类号： H04B1/40
CPC分类号： H03D7/1441 , H03D7/1433 , H03D7/1466 , H03D2200/0043
摘要： Techniques for designing a single-balanced mixer coupled to a dummy portion with a dummy load to improve noise rejection. In an aspect, a single-ended signal (RF) from a stage preceding the mixer, e.g., a low-noise amplifier (LNA), is coupled to the input of the single-balanced mixer to be mixed with a local oscillator (LO) signal. A dummy portion replicating the topology of the single-balanced mixer is coupled to the single-balanced mixer to improve noise rejection, with the LO signal also provided to the dummy portion. The input of the dummy portion may be coupled, e.g., to a dummy load, which is designed to replicate the loading characteristics of the preceding stage, e.g., the LNA.
摘要翻译：用于设计耦合到具有虚拟负载的虚拟部分的单平衡混频器以改善噪声抑制的技术。在一个方面，来自混频器之前的级（例如低噪声放大器（LNA））的单端信号（RF）被耦合到单平衡混频器的输入端以与本地振荡器（LO ）信号。将单平衡混频器的拓扑复制的虚拟部分耦合到单平衡混频器以改善噪声抑制，同时LO信号也提供给虚拟部分。虚拟部分的输入可以例如耦合到虚拟负载，虚拟负载被设计为复制前一级的负载特性，例如LNA。

8. 发明申请

US20100144290A1 MIXER ARCHITECTURES 有权
标题翻译：混合体系结构
公开(公告)号：US20100144290A1
公开(公告)日：2010-06-10
申请号：US12538775
申请日：2009-08-10
申请人： Himanshu Khatri , Li Liu
发明人： Himanshu Khatri , Li Liu
IPC分类号： G06G7/12 , H04B1/40
CPC分类号： H03D7/1441 , H03D7/1433 , H03D7/1466 , H03D2200/0043
摘要： Techniques for designing a single-balanced mixer coupled to a dummy portion with a dummy load to improve noise rejection. In an aspect, a single-ended signal (RF) from a stage preceding the mixer, e.g., a low-noise amplifier (LNA), is coupled to the input of the single-balanced mixer to be mixed with a local oscillator (LO) signal. A dummy portion replicating the topology of the single-balanced mixer is coupled to the single-balanced mixer to improve noise rejection, with the LO signal also provided to the dummy portion. The input of the dummy portion may be coupled, e.g., to a dummy load, which is designed to replicate the loading characteristics of the preceding stage, e.g., the LNA.
摘要翻译：用于设计耦合到具有虚拟负载的虚拟部分的单平衡混频器以改善噪声抑制的技术。在一方面，来自混频器之前的级（例如低噪声放大器（LNA））的单端信号（RF）被耦合到单平衡混频器的输入端，以与本地振荡器（LO ）信号。将单平衡混频器的拓扑复制的虚拟部分耦合到单平衡混频器以改善噪声抑制，同时LO信号也提供给虚拟部分。虚拟部分的输入可以例如耦合到虚拟负载，虚拟负载被设计为复制前一级的负载特性，例如LNA。

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