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    • 7. 发明申请
    • ENHANCING DEVICE RELIABILITY FOR VOLTAGE CONTROLLED OSCILLATOR (VCO) BUFFERS UNDER HIGH VOLTAGE SWING CONDITIONS
    • 在高电压条件下提高电压控制振荡器(VCO)缓冲器的设备可靠性
    • US20100327986A1
    • 2010-12-30
    • US12825221
    • 2010-06-28
    • Chinmaya MishraRajagopalan RangarajanHongyan Yan
    • Chinmaya MishraRajagopalan RangarajanHongyan Yan
    • H03B5/12H03L5/00
    • H03L5/00H03L7/099
    • A circuit for a voltage controlled oscillator (VCO) buffer is described. The circuit includes a first capacitor connected to an input of the VCO buffer that is connected to a VCO core. The circuit also includes a second capacitor connected to the input of the VCO buffer and the gate of a p-type metal-oxide-semiconductor field effect (PMOS) transistor. The circuit further includes a first switch connected to the first capacitor and the gate of the PMOS transistor. The circuit also includes a third capacitor connected to the input of the VCO buffer. The circuit further includes a fourth capacitor connected to the input of the VCO buffer and the gate of an n-type metal-oxide-semiconductor field effect (NMOS) transistor. The circuit also includes a second switch connected to the third capacitor and the gate of the NMOS transistor.
    • 描述了用于压控振荡器(VCO)缓冲器的电路。 电路包括连接到VCO缓冲器的输入的第一电容器,其连接到VCO核心。 电路还包括连接到VCO缓冲器的输入端和p型金属氧化物半导体场效应(PMOS)晶体管的栅极的第二电容器。 电路还包括连接到第一电容器和PMOS晶体管的栅极的第一开关。 该电路还包括连接到VCO缓冲器的输入的第三电容器。 电路还包括连接到VCO缓冲器的输入端和n型金属氧化物半导体场效应(NMOS)晶体管的栅极的第四电容器。 电路还包括连接到第三电容器和NMOS晶体管的栅极的第二开关。