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1. 发明授权

US06503782B2 Complementary accumulation-mode JFET integrated circuit topology using wide (>2eV) bandgap semiconductors 有权
公开(公告)号：US06503782B2
公开(公告)日：2003-01-07
申请号：US09796490
申请日：2001-03-02
申请人： Jeffrey Blaine Casady , Benjamin Blalock , Stephen E. Saddow , Michael S. Mazzola
发明人： Jeffrey Blaine Casady , Benjamin Blalock , Stephen E. Saddow , Michael S. Mazzola
IPC分类号： H01L21332
CPC分类号： H01L29/66068 , H01L27/098 , H01L29/1608 , H01L29/66901 , H01L29/808
摘要： A method and device produced for design, construction, and use of integrated circuits in wide bandgap semiconductors, including methods for fabrication of n-channel and p-channel junction field effect transistors on a single wafer or die, such that the produced devices may have pinchoff voltages of either positive or negative polarities. A first layer of either p-type or n-type is formed as a base. An alternating, channel layer of either n-type or p-type is then formed, followed by another layer of the same type as the first layer. Etching is used to provide contacts for the gates, source, and drain of the device. In one variation, pinchoff voltage is controlled via dopant level and thickness the channel region. In another variation, pinchoff voltage is controlled by variation of dopant level across the channel layer; and in another variation, pinchoff voltage is controlled by both thickness and variation of dopant level.

2. 发明授权

US06410396B1 Silicon carbide: germanium (SiC:Ge) heterojunction bipolar transistor; a new semiconductor transistor for high-speed, high-power applications 有权
标题翻译：碳化硅：锗（SiC：Ge）异质结双极晶体管; 一种用于高速，大功率应用的新型半导体晶体管
公开(公告)号：US06410396B1
公开(公告)日：2002-06-25
申请号：US09825065
申请日：2001-04-04
申请人： Jeffrey B. Casady , Michael S. Mazzola , Stephen E. Saddow
发明人： Jeffrey B. Casady , Michael S. Mazzola , Stephen E. Saddow
IPC分类号： H01L21331
CPC分类号： H01L29/7378 , H01L29/1608 , Y10S438/931
摘要： Devices and methods for fabricating wholly silicon carbide heterojunction bipolar transistors (HBTs) using germanium base doping to produce suitable emitter/base heterojunctions. In one variation, all device layers are are grown epitaxially and the heterojunction is created by introducing a pseudoalloying material, such as germanium, to form a graded implant. In other variations, the device epitaxial layers are 1) grown directly onto a semi-insulating substrate, 2) the semi-insulating epitaxial layer is grown onto a conducting substrate; 3) the subcollector is grown on a lightly doped p-type epitaxial layer grown on a conducting substrate; and 4) the subcollector is grown directly on a conducting substrate. Another variation comprises a multi-finger HBT with bridging conductor connections among emitter fingers. Yet another variation includes growth of layers using dopants other than nitrogent or aluminum. Yet another variation includes implantation of region within one or more epitaxial layers, rather than use of separate epitaxial layers.
摘要翻译：使用锗基掺杂制造完全碳化硅异质结双极晶体管（HBT）以产生合适的发射极/基极异质结的装置和方法。在一个变型中，外延生长所有器件层，并且通过引入诸如锗的假合金化材料来形成异质结，以形成渐变植入物。在其他变型中，器件外延层1）直接生长到半绝缘衬底上，2）半导体绝缘外延层生长在导电衬底上; 3）子集电极在生长在导电衬底上的轻掺杂p型外延层上生长; 和4）子集电极直接在导电衬底上生长。另一变型包括在发射器指状物之间具有桥接导体连接的多指HBT。另一种变化包括使用除了nit或铝之外的掺杂剂的层的生长。又一变型包括在一个或多个外延层内注入区域，而不是使用单独的外延层。

3. 发明申请

US20140067023A1 OPTICAL NEURON STIMULATION PROSTHETIC USING SILICON CARBIDE 审中-公开
标题翻译：光学神经元刺激使用硅碳化物
公开(公告)号：US20140067023A1
公开(公告)日：2014-03-06
申请号：US13953224
申请日：2013-07-29
申请人： Joseph J. Register , Stephen E. Saddow , Christopher L. Frewin , Edwin Weeber
发明人： Joseph J. Register , Stephen E. Saddow , Christopher L. Frewin , Edwin Weeber
IPC分类号： A61N5/06
CPC分类号： A61N5/0622 , A61L31/02 , A61L2400/18 , A61L2430/32 , A61N2005/0612 , A61N2005/0651 , Y10T29/49826
摘要： The microfabricated prosthetic device uses local, direct, and wavelength-specific optical stimulation to achieve an action potential from a single or small group of neurons within the central nervous system (CNS). The device is biocompatible, mechanically flexible, and optically transparent. The device can also use integrated electrodes for additional input/output (IO) locations, signal verification, feedback, wireless communication, and characterization of the electrochemically-evoked potential received from the activated neuron. The purpose of the device is to act as a neural interface prosthetic. The prosthetic is designed as the central component of a brain machine interface (BMI).
摘要翻译：微制造假体装置使用局部，直接和波长特定的光学刺激来实现来自中枢神经系统（CNS）内的单个或小组神经元的动作电位。该设备具有生物相容性，机械灵活性和光学透明性。该装置还可以使用集成电极用于额外的输入/输出（IO）位置，信号验证，反馈，无线通信以及从激活的神经元接收的电化学诱发电位的表征。该装置的目的是作为神经接口假肢。假肢被设计为脑机接口（BMI）的中心部件。

4. 发明申请

US20140194719A1 Long-Term Implantable Silicon Carbide Neural Interface Device Using the Electrical Field Effect 审中-公开
标题翻译：使用电场效应的长期植入式碳化硅神经接口装置
公开(公告)号：US20140194719A1
公开(公告)日：2014-07-10
申请号：US14154863
申请日：2014-01-14
申请人： Christopher Leroy Frewin , Stephen E. Saddow
发明人： Christopher Leroy Frewin , Stephen E. Saddow
IPC分类号： A61B5/04 , H01L29/66 , H01L21/28
CPC分类号： A61B5/04001 , A61B5/0478 , A61B2562/125 , H01L21/28 , H01L29/66477
摘要： Field effect devices, such as capacitors and field effect transistors, are used to interact with neurons. Cubic silicon carbide is biocompatible with the neuronal environment and has the chemical and physical resilience required to withstand the body environment and does not produce toxic byproducts. It is used as a basis for generating a biocompatible semiconductor field effect device that interacts with the brain for long periods of time. The device signals capacitively and receives signals using field effect transistors. These signals can be used to drive very complicated systems such as multiple degree of freedom limb prosthetics, sensory replacements, and may additionally assist in therapies for diseases like Parkinson's disease.
摘要翻译：诸如电容器和场效应晶体管的场效应器件用于与神经元相互作用。立方碳化硅与神经元环境具有生物相容性，具有抵抗人体环境所需的化学和物理弹性，不会产生有毒的副产物。它被用作产生长时间与大脑相互作用的生物相容性半导体场效应器件的基础。器件以电容信号进行信号，并使用场效应晶体管接收信号。这些信号可用于驱动非常复杂的系统，例如多自由度肢体假肢，感觉替代物，并且可以另外辅助治疗疾病如帕金森病。

5. 发明授权

US08751015B2 Graphene electrodes on a planar cubic silicon carbide (3C-SiC) long term implantable neuronal prosthetic device 有权
标题翻译：石墨烯电极在平面立方碳化硅（3C-SiC）长期可植入神经元假体装置上
公开(公告)号：US08751015B2
公开(公告)日：2014-06-10
申请号：US13905909
申请日：2013-05-30
申请人： Christopher Leroy Frewin , Stephen E. Saddow , Camilla Coletti
发明人： Christopher Leroy Frewin , Stephen E. Saddow , Camilla Coletti
IPC分类号： A61N1/00
CPC分类号： A61N1/0551 , Y10T29/49155
摘要： Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C—SiC shank and electrical insulation is provided by conformal insulating SiC. These materials are not only chemically resilient, physically durable, and have excellent electrical properties, but have demonstrated a very high degree of biocompatibility. Graphene also has a large specific capacitance in electrolytic solutions as well as a large surface area which reduces the chances for irreversible Faradaic reactions. Graphene can easily be constructed on SiC by the evaporation of Si from the surface of that material allowing for mechanically robust epitaxial graphene layers that can be fashioned into electrodes using standard lithography and etching methods.
摘要翻译：石墨烯可用于制造植入式神经元假体，可在体内无限期植入。石墨烯电极放置在3C-SiC柄上，电绝缘由保形绝缘SiC提供。这些材料不仅具有化学弹性，物理耐久性，并且具有优异的电性能，而且具有非常高的生物相容性。石墨烯在电解液中也具有很大的比电容以及较大的表面积，从而降低了不可逆法拉第反应的可能性。石墨烯可以通过从该材料的表面蒸发Si而容易地在SiC上构成，从而允许使用标准光刻和蚀刻方法将机械强化的外延石墨烯层形成电极。

6. 发明申请

US20130338744A1 GRAPHENE ELECTRODES ON A PLANAR CUBIC SILICON CARBIDE (3C-SIC) LONG TERM IMPLANTABLE NEURONAL PROSTHETIC DEVICE 有权
标题翻译：平面碳化硅碳化硅（3C-SIC）上的石墨电极长期可植入神经元前置装置
公开(公告)号：US20130338744A1
公开(公告)日：2013-12-19
申请号：US13905909
申请日：2013-05-30
申请人： Christopher Leroy Frewin , Stephen E. Saddow , Camilla Coletti
发明人： Christopher Leroy Frewin , Stephen E. Saddow , Camilla Coletti
IPC分类号： A61N1/05
CPC分类号： A61N1/0551 , Y10T29/49155
摘要： Graphene, can be used to make an implantable neuronal prosthetic which can be indefinitely implanted in vivo. Graphene electrodes are placed on a 3C—SiC shank and electrical insulation is provided by conformal insulating SiC. These materials are not only chemically resilient, physically durable, and have excellent electrical properties, but have demonstrated a very high degree of biocompatibility. Graphene also has a large specific capacitance in electrolytic solutions as well as a large surface area which reduces the chances for irreversible Faradaic reactions. Graphene can easily be constructed on SiC by the evaporation of Si from the surface of that material allowing for mechanically robust epitaxial graphene layers that can be fashioned into electrodes using standard lithography and etching methods.
摘要翻译：石墨烯可用于制造植入式神经元假体，可在体内无限期植入。石墨烯电极放置在3C-SiC柄上，电绝缘由保形绝缘SiC提供。这些材料不仅具有化学弹性，物理耐久性，并且具有优异的电性能，而且具有非常高的生物相容性。石墨烯在电解液中也具有很大的比电容以及较大的表面积，从而降低了不可逆法拉第反应的可能性。石墨烯可以通过从该材料的表面蒸发Si而容易地在SiC上构成，从而允许使用标准光刻和蚀刻方法将机械强化的外延石墨烯层形成电极。

7. 发明授权

US10136825B2 Long-term implantable silicon carbide neural interface device using the electrical field effect 有权
公开(公告)号：US10136825B2
公开(公告)日：2018-11-27
申请号：US14154863
申请日：2014-01-14
申请人： Christopher Leroy Frewin , Stephen E. Saddow
发明人： Christopher Leroy Frewin , Stephen E. Saddow
IPC分类号： A61B5/04 , A61B5/0478 , H01L21/28 , H01L29/66
摘要： Field effect devices, such as capacitors and field effect transistors, are used to interact with neurons. Cubic silicon carbide is biocompatible with the neuronal environment and has the chemical and physical resilience required to withstand the body environment and does not produce toxic byproducts. It is used as a basis for generating a biocompatible semiconductor field effect device that interacts with the brain for long periods of time. The device signals capacitively and receives signals using field effect transistors. These signals can be used to drive very complicated systems such as multiple degree of freedom limb prosthetics, sensory replacements, and may additionally assist in therapies for diseases like Parkinson's disease.

8. 发明申请

US20120232631A1 CUBIC SILICON CARBIDE IMPLANTABLE NEURAL PROSTHETIC 有权
标题翻译： CUBIC碳化硅可植入神经元
公开(公告)号：US20120232631A1
公开(公告)日：2012-09-13
申请号：US13479631
申请日：2012-05-24
申请人： Christopher Leroy Frewin , Stephen E. Saddow , Edwin Weeber
发明人： Christopher Leroy Frewin , Stephen E. Saddow , Edwin Weeber
IPC分类号： A61N1/05 , H01R43/00
CPC分类号： A61N1/0529 , A61B5/04001 , C23C16/325 , Y10T29/49194
摘要： An implantable neuronal prosthetic and method of manufacture thereof includes at least one elongated electrode shank adapted for arrangement in the brain having at least one electrode contact disposed on its surface and arranged to electrically couple with said brain. The at least one elongated electrode shank is formed form a single crystal cubic silicon carbide. An insulation layer of amorphous, polycrystalline, or single crystal silicon carbide is disposed over the elongated electrode shank; the insulation layer of amorphous, polycrystalline, or single crystal silicon carbide is removed from the at least one electrode contact. Signal control electronics are attached to the at least one elongated electrode shank and are in electrical communication with the at least one electrode contact. In an embodiment, a plurality of the at least one elongated electrode shanks are arranged into a matrix.
摘要翻译：可植入神经元假体及其制造方法包括至少一个适于安排在脑中的细长电极柄，其具有设置在其表面上的至少一个电极接触件并布置成与所述大脑电耦合。至少一个细长电极柄由单晶立方碳化硅形成。非晶，多晶或单晶碳化硅的绝缘层设置在细长电极柄上; 从至少一个电极接触件去除非晶，多晶或单晶碳化硅的绝缘层。信号控制电子装置连接到至少一个细长的电极柄并且与至少一个电极接触件电连通。在一个实施例中，多个所述至少一个细长电极柄被布置成矩阵。

9. 发明授权

US5596438A Photoconductive spread-spectrum communications system 失效
标题翻译：光电扩频通信系统
公开(公告)号：US5596438A
公开(公告)日：1997-01-21
申请号：US530398
申请日：1995-09-21
申请人： Stephen E. Saddow , Eric Funk , Louis J. Jasper , Chi H. Lee
发明人： Stephen E. Saddow , Eric Funk , Louis J. Jasper , Chi H. Lee
IPC分类号： H04B1/69 , H04B10/12 , H04J14/00 , H04B10/00 , H04B15/00 , H04K1/00
CPC分类号： H04J14/005 , H04B1/69 , H04B10/25752 , H04B2210/006
摘要： A photoconductive spread-spectrum communications system that includes a tsmitter and a receiver. The transmitter includes an oscillating laser, a Pockels' cell, a delay cell, a photoconductive switch, and an antenna for transmitting an electromagnetic spread-spectrum signal. The receiver includes an oscillating laser, a Pockels' cell, an antenna for receiving a spread-spectrum signal, a photoconductive switch, a filter, and a threshold detector for regenerating the signal contained within the spread-spectrum transmission.
摘要翻译：一种包含发射机和接收机的光电扩展频谱通信系统。发射机包括振荡激光器，普克尔单元，延迟单元，光电开关和用于发射电磁扩频信号的天线。接收机包括振荡激光器，普克尔电池，用于接收扩频信号的天线，光电导开关，滤波器和用于再生包含在扩频传输中的信号的阈值检测器。

10. 发明授权

US4891730A Monolithic microwave integrated circuit terminal protection device 失效
标题翻译：单片微波集成电路端子保护装置
公开(公告)号：US4891730A
公开(公告)日：1990-01-02
申请号：US351114
申请日：1989-05-10
申请人： Stephen E. Saddow , Robert V. Garver , Roger Kaul
发明人： Stephen E. Saddow , Robert V. Garver , Roger Kaul
IPC分类号： H01L23/20 , H01T4/08
CPC分类号： H01T4/08 , H01L23/20 , H01L2224/49171 , H01L2924/1423 , H01L2924/3011
摘要： A monolithic microwave integrated circuit is enclosed within an ionizable gas filled housing having a terminal protection device integral with the circuit's substrate. A photon generating region extends within the substrate and along a portion of the surface area of the substrate for facilitating the ionizing of the gas. First and second electrodes, in contact with the substrate surface area and disposed on opposite sides of the photon generating region, have a plurality of cantilevered protrusions extending over the surface of the substrate and equally spaced from one another forming spark-gaps therebetween. One electrode is connected to an input to the device while the other is connected to ground. When a potential difference between the first and second electrodes increases towards a predetermined value, due to high RF input energy, the photon generating region is operatively biased to emit photons, which ionize the gas, resulting in a voltage discharge across the spark-gaps to occur quickly and at a lower voltage than the semiconductor breakdown voltage.
摘要翻译：单片微波集成电路封装在具有与电路基板一体的端子保护装置的可电离气体填充的壳体内。光子产生区域在衬底内并且沿着衬底的表面区域的一部分延伸，以便于气体的电离。第一和第二电极与衬底表面区域接触并且设置在光子产生区域的相对侧上，具有在衬底的表面上延伸的多个悬臂突出部，并且彼此间隔开，在它们之间形成火花隙。一个电极连接到设备的输入，而另一个连接到地。当第一和第二电极之间的电势差向预定值增加时，由于高的RF输入能量，光子产生区被可操作地偏置以发射光子，这使得气体离子化，从而导致跨火花隙的电压放电发生在比半导体击穿电压低的电压下。

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