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1. 发明申请

US20050004142A1 Chemical compounds 失效
标题翻译：化合物
公开(公告)号：US20050004142A1
公开(公告)日：2005-01-06
申请号：US10489052
申请日：2002-09-10
申请人： Jerry Adams , Deborah Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos Silva , Jun Tang
发明人： Jerry Adams , Deborah Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos Silva , Jun Tang
IPC分类号： C07D491/048 , A61K31/519 , A61K31/5377 , A61K45/00 , A61P1/16 , A61P3/10 , A61P7/02 , A61P9/00 , A61P9/10 , A61P13/12 , A61P17/02 , A61P17/06 , A61P19/02 , A61P25/28 , A61P29/00 , A61P35/00 , A61P37/06 , A61P43/00 , C07D491/04 , C07D495/04 , C07D519/00 , C07D491/02
CPC分类号： C07D491/04 , C07D495/04
摘要： Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.
摘要翻译：本文描述了可用作TIE-2和/或VEGFR-2抑制剂的呋喃和噻吩并嘧啶衍生物。所述的发明还包括制备这些呋喃并噻吩并嘧啶衍生物的方法以及使用它们在治疗过度增殖性疾病中的方法。

2. 发明授权

US07427623B2 4-Amino-2,3-disubstituted thieno[2,3-d]pyrimidines and pharmacetical compositions thereof 失效
标题翻译： 4-氨基-2,3-二取代噻吩并[2,3-d]嘧啶及其药物组合物
公开(公告)号：US07427623B2
公开(公告)日：2008-09-23
申请号：US10489052
申请日：2002-09-10
申请人： Jerry Leroy Adams , Deborah Lynne Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos J. Silva , Jun Tang
发明人： Jerry Leroy Adams , Deborah Lynne Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos J. Silva , Jun Tang
IPC分类号： A61K31/519 , C07D495/04 , A61P35/00 , A61P9/00
CPC分类号： C07D491/04 , C07D495/04
摘要： Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.
摘要翻译：本文描述了可用作TIE-2和/或VEGFR-2抑制剂的呋喃和噻吩并嘧啶衍生物。所述的发明还包括制备这些呋喃并噻吩并嘧啶衍生物的方法以及使用它们在治疗过度增殖性疾病中的方法。

3. 发明申请

US20080287466A1 4-AMINO-2,3-DISUBSTITUTED THIENO [2,3,D]PYRIMIDINES AND PHARMACEUTICAL COMPOSITIONS THEREOF 审中-公开
标题翻译： 4-氨基-2,3-取代的噻吩并[2,3，D]嘧啶和其药物组合物
公开(公告)号：US20080287466A1
公开(公告)日：2008-11-20
申请号：US12169800
申请日：2008-07-09
申请人： Jerry Leroy Adams , Deborah Lynne Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos J. Silva , Jun Tang
发明人： Jerry Leroy Adams , Deborah Lynne Bryan , Yanhong Feng , Shinichiro Matsunaga , Yutaka Maeda , Yasushi Miyazaki , Masato Nakano , Jean-Philippe Rocher , Hideyuki Sato , Marcus Semones , Domingos J. Silva , Jun Tang
IPC分类号： A61K31/519 , C07D491/04 , A61P43/00
CPC分类号： C07D491/04 , C07D495/04
摘要： Furo- and thienopyrimidine derivatives, which are useful as TIE-2 and/or VEGFR-2 inhibitors are described herein. The described invention also includes methods of making such furo- and thienopyrimidine derivatives as well as methods of using the same in the treatment of hyperproliferative diseases.
摘要翻译：本文描述了可用作TIE-2和/或VEGFR-2抑制剂的呋喃和噻吩并嘧啶衍生物。所述的发明还包括制备这些呋喃并噻吩并嘧啶衍生物的方法以及使用它们在治疗过度增殖性疾病中的方法。

4. 发明申请

US20100330398A1 Semiconductor device, battery protection circuit and battery pack 失效
公开(公告)号：US20100330398A1
公开(公告)日：2010-12-30
申请号：US12805965
申请日：2010-08-26
申请人： Mutsumi Kitamura , Akio Sugi , Naoto Fujishima , Shinichiro Matsunaga
发明人： Mutsumi Kitamura , Akio Sugi , Naoto Fujishima , Shinichiro Matsunaga
IPC分类号： H01M10/42 , H03H11/00
CPC分类号： H01M10/4207 , H01L27/0629 , H01L29/0696 , H01L29/4238 , H01L29/781 , H01L29/7827 , H01M10/48
摘要： A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.

5. 发明申请

US20050189981A1 Current detection circuit of bidirectional switch 有权
标题翻译：双向开关电流检测电路
公开(公告)号：US20050189981A1
公开(公告)日：2005-09-01
申请号：US10998799
申请日：2004-11-30
申请人： Shinichiro Matsunaga
发明人： Shinichiro Matsunaga
IPC分类号： G01R19/165 , G01R27/08 , H02J7/00 , H03D1/00
CPC分类号： G01R19/16571 , G01R19/16542
摘要： A bidirectional main switch includes two main switches M1 and M2 formed of two main MOSFET's Q1 and Q2, respectively; a bidirectional mirror switch including two mirror switches M3 and M4 formed of two mirror MOSFET's Q3 and Q4, respectively, both being formed so as to allow a small current (a mirror current) to flow therein in a specified ratio to a current in the main MOSFET's Q1 and Q2; and an operational amplifier Op1 forming a feed back amplifying circuit having power supplied from two power sources of a positive source VDD and a negative source—VDD, being connected between the end of the bidirectional main switch and the end of the bidirectional mirror switch, and allowing the mirror current to flow in the bidirectional mirror switch through a sensing resistor Rs so as to equalize voltages at the ends of the two bidirectional switches, with which the mirror current, consequently a battery charge and discharge current, is detected from a voltage across the sensing resistor. Thus, a bidirectional current flowing the bidirectional main switch for cutting off an excessive charge current and an excessive discharge current of a battery E can be detected by a simple circuit with low power losses and a high accuracy.
摘要翻译：双向主开关包括分别由两个主MOSFET的Q 1和Q 2形成的两个主开关M 1和M 2; 分别包括由两个反射镜MOSFET的Q 3和Q 4形成的两个反射镜开关M 3和M 4的双向反射镜开关，两个反射镜开关M 3和M 4都形成为允许小电流（反射镜电流）以特定的比例流向其中主MOSFET的Q1和Q2中的电流; 以及形成反馈放大电路的运算放大器Op1，其连接在双向主开关的端部和双向反射镜开关的端部之间，具有从正源VDD和负电源VDD的两个电源供给的电力，并且允许反射镜电流在双向反射镜开关中通过感测电阻器Rs流动，以便均衡两个双向开关的端部处的电压，从而从其电压检测反射镜电流，从而检测电池充电和放电电流跨越感测电阻。因此，可以通过具有低功率损耗和高精度的简单电路来检测流过双向主开关的双向电流，以切断电池E的过充电电流和过大的放电电流。

6. 发明申请

US20090085106A1 Semiconductor device and semiconductor device manufacturing method 审中-公开
标题翻译：半导体器件和半导体器件制造方法
公开(公告)号：US20090085106A1
公开(公告)日：2009-04-02
申请号：US12232989
申请日：2008-09-26
申请人： Shinichiro Matsunaga
发明人： Shinichiro Matsunaga
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/41766 , H01L21/26586 , H01L29/4236 , H01L29/456 , H01L29/66659 , H01L29/66787 , H01L29/7835
摘要： A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed.
摘要翻译：提供了相对于基板的表面积具有低导通电阻和高集成度的半导体器件。在半导体器件中，在设置在半导体衬底上的元件形成区域中设置第一沟槽，第二沟槽和第三沟槽。金属沉积在第一沟槽和第二沟槽内，分别形成漏电极和源电极。多晶硅沉积在第三沟槽内部，栅极绝缘膜介于其间，形成栅电极。

7. 发明申请

US20060223826A1 Indole derivatives as somatostatin agonists or antagonists 审中-公开
标题翻译：吲哚衍生物作为生长抑素激动剂或拮抗剂
公开(公告)号：US20060223826A1
公开(公告)日：2006-10-05
申请号：US10534725
申请日：2003-11-18
申请人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
发明人： Hidenori Abe , Shinichiro Matsunaga , Shiro Takekawa , Masanori Watanabe
IPC分类号： A61K31/496 , A61K31/454 , C07D403/02
CPC分类号： C07D401/12 , C07D209/20 , C07D209/42 , C07D401/14 , C07D403/12 , C07D405/12 , C07D405/14 , C07D417/12 , C07D417/14 , C07D495/04
摘要： The present invention provide a compound of the formula (I) wherein ring A represents an aromatic ring optionally having substituents; B, Y and Ya are the same or different and each represents a bond, etc.; R1 and R2 are the same or different and each represents a hydrogen atom, etc.; R3 represents a hydrogen atom, etc.; R4 and R5 are the same or different and each represents a hydrogen, etc.; R6 represents an indolyl group optionally having substituents; and Z and Za are the same or different and each represents a hydrogen atom, etc.; or a salt thereof or a prodrug thereof, having a somatostatin receptor binding inhibition activity and is useful for preventing and/or treating diseases associated with somatostatin.
摘要翻译：本发明提供式（I）的化合物，其中环A表示任选具有取代基的芳环; B，Y和Ya是相同或不同的，每个代表一个债券等; R 1和R 2相同或不同，各自表示氢原子等; R 3表示氢原子等; R 4和R 5相同或不同，各自表示氢等; R 6表示任选具有取代基的吲哚基; Z和Za相同或不同，各自表示氢原子等; 或其盐或其前药，具有生长抑素受体结合抑制活性，并且可用于预防和/或治疗与生长抑素相关的疾病。

8. 发明授权

US08921928B2 Semiconductor device with low on resistance 有权
标题翻译：具有低导通电阻的半导体器件
公开(公告)号：US08921928B2
公开(公告)日：2014-12-30
申请号：US13099119
申请日：2011-05-02
申请人： Shinichiro Matsunaga
发明人： Shinichiro Matsunaga
IPC分类号： H01L29/78 , H01L29/417 , H01L29/423 , H01L29/66 , H01L21/265 , H01L29/45
CPC分类号： H01L29/41766 , H01L21/26586 , H01L29/4236 , H01L29/456 , H01L29/66659 , H01L29/66787 , H01L29/7835
摘要： A semiconductor device having a low on resistance and high integration level with respect to the surface area of a substrate is provided. In the semiconductor device, a first trench, a second trench, and a third trench are provided in an element formation region provided on a semiconductor substrate. Metal is deposited within the first trench and second trench, to form a drain electrode and a source electrode, respectively. Polysilicon is deposited inside the third trench with a gate insulating film intervening, and a gate electrode is formed.
摘要翻译：提供了相对于基板的表面积具有低导通电阻和高集成度的半导体器件。在半导体器件中，在设置在半导体衬底上的元件形成区域中设置第一沟槽，第二沟槽和第三沟槽。金属沉积在第一沟槽和第二沟槽内，分别形成漏电极和源电极。多晶硅沉积在第三沟槽内部，栅极绝缘膜介于其间，形成栅电极。

9. 发明授权

US08378418B2 Semiconductor device, battery protection circuit and battery pack 失效
标题翻译：半导体器件，电池保护电路和电池组
公开(公告)号：US08378418B2
公开(公告)日：2013-02-19
申请号：US12805965
申请日：2010-08-26
申请人： Mutsumi Kitamura , Akio Sugi , Naoto Fujishima , Shinichiro Matsunaga
发明人： Mutsumi Kitamura , Akio Sugi , Naoto Fujishima , Shinichiro Matsunaga
IPC分类号： H01L29/66
CPC分类号： H01M10/4207 , H01L27/0629 , H01L29/0696 , H01L29/4238 , H01L29/781 , H01L29/7827 , H01M10/48
摘要： A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.
摘要翻译：双向沟槽横向功率MOSFET（TLPM）可实现高击穿电压和低导通电阻。在两端具有圆形部分的多个直形岛被沟槽布置包围。这些岛提供第一n个源区，并且在岛的外部形成第二n源区。利用这种图案，在第二n个源极区域处于高电位的情况下，在第一n个源极区域处于高电位的情况下的击穿电压可以高于击穿电压。或者，在不改变击穿电压的情况下，可以降低导通电阻。

10. 发明申请

US20080275127A1 Arylsulfonamido-substituted hydroxamic acid derivatives 失效
标题翻译：芳基磺酰氨基取代的异羟肟酸衍生物
公开(公告)号：US20080275127A1
公开(公告)日：2008-11-06
申请号：US11581524
申请日：2006-10-16
申请人： Werner Breitenstein , Kenji Hayakawa , Genji Iwasaki , Takanori Kanazawa , Tatsuhiko Kasaoka , Shinichi Koizumi , Shinichiro Matsunaga , Motowo Nakajima , Junichi Sakaki
发明人： Werner Breitenstein , Kenji Hayakawa , Genji Iwasaki , Takanori Kanazawa , Tatsuhiko Kasaoka , Shinichi Koizumi , Shinichiro Matsunaga , Motowo Nakajima , Junichi Sakaki
IPC分类号： A61K31/18 , C07C303/00
CPC分类号： C07D207/32 , C07C311/29 , C07D213/42 , C07D215/12 , C07D231/12 , C07D233/56 , C07D233/64 , C07D249/06 , C07D249/08 , C07D257/04 , C07D295/125 , C07D295/13 , C07D295/135 , C07D307/52 , C07D333/20
摘要： α-Amino hydroxamic acid derivative of the formula I, in which R is C2-C7-alkyl, which is mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3-C5-cycloalkyl or unsubstituted or substituted C3-C6-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; or C3-C7-alkenyl or C3-C7-alkynyl, which in each case is unsubstituted or mono-, di- or trisubstituted by halogen, nitro, lower acyloxy, trifluoromethoxy, cyano, C3-C5-cycloalkyl or unsubstituted or substituted C3-C6-heteroaryl comprising one or two heteroatoms selected from the group consisting of O, S and N; and the other symbols are as defined in claim 1, are described. These compounds are MMP and in particular MMP2 inhibitors and can be used for treatment of MMP dependent diseases, in particular inflammation conditions, rheumatoid arthritis, osteoarthritis, tumors (tumor growth, metastasis, progression or invasion) and pulmonary disorders (e.g. emphysema, COPD).
摘要翻译：式I的α-氨基异羟肟酸衍生物，其中R是C 2 -C 7 - 烷基，其被卤素，硝基的单，二或三取代，低级酰氧基，三氟甲氧基，氰基，C 3 -C 5 - 环烷基或未取代或取代的C 3 -C 6 - 包含一个或两个选自O，S和N的杂原子的杂芳基; 或C 3 -C 7 - 烯基或C 3 -C 7 - 炔基，其在每种情况下为未取代的或被卤素，硝基，低级酰氧基，三氟甲氧基，氰基，C 3 -C 5 - 环烷基或未取代或取代的C 1 - 3个-C 6 -C 6 - 杂芳基，其包含一个或两个选自O，S和N的杂原子; 并且其它符号如权利要求1中所定义。这些化合物是MMP，特别是MMP2抑制剂，可用于治疗MMP依赖性疾病，特别是炎症病症，类风湿性关节炎，骨关节炎，肿瘤（肿瘤生长，转移，进展或侵袭）和肺部疾病（例如肺气肿，COPD）。

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