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1. 发明授权

US11117865B2 Inhibitors of bromodomain-containing protein 4 (BRD4) 有权
公开(公告)号：US11117865B2
公开(公告)日：2021-09-14
申请号：US16442526
申请日：2019-06-16
申请人： Jia Zhou , Allan R. Brasier , Bing Tian , Zhiqing Liu , Haiying Chen , Erik Rytting
发明人： Jia Zhou , Allan R. Brasier , Bing Tian , Zhiqing Liu , Haiying Chen , Erik Rytting
IPC分类号： A61K9/14 , A61P29/00 , C07D311/00 , C07D215/38 , C07D207/48 , C07D241/04 , C07D311/30 , C07D401/06 , C07D401/12 , C07D401/14 , C07D405/12 , C07D413/04 , C07D413/06 , C07D413/14 , C07D471/04
摘要： Certain embodiments are directed to small molecule selective inhibitors of the BRD4 bromodomain. Compounds described herein can be used to modulate the bronchiolar NFkB-BRD4 axis, which plays a role in acute neutrophilic response to viral molecular patterns. Compounds described herein can be developed as preventive and therapeutic agents for various human diseases and conditions.

2. 发明申请

US20200255388A1 EPAC ANTAGONISTS 审中-公开
公开(公告)号：US20200255388A1
公开(公告)日：2020-08-13
申请号：US16499050
申请日：2018-03-29
申请人： Jia ZHOU , Zhiqing Liu , Na Ye , Fang Mei , Xiaodong Cheng
发明人： Jia ZHOU , Zhiqing Liu , Na Ye , Fang Mei , Xiaodong Cheng
IPC分类号： C07D261/08 , C07D261/20 , A61P31/04
摘要： Embodiments are directed to a series of novel EPAC antagonists that are designed, synthesized and evaluated in an effort to develop diversified analogues based on the scaffold of the previously identified high-throughput (HTS) hit ESI-09.

3. 发明授权

US11124489B2 EPAC antagonists 有权
公开(公告)号：US11124489B2
公开(公告)日：2021-09-21
申请号：US16499050
申请日：2018-03-29
申请人： Jia Zhou , Zhiqing Liu , Na Ye , Fang Mei , Xiaodong Cheng
发明人： Jia Zhou , Zhiqing Liu , Na Ye , Fang Mei , Xiaodong Cheng
IPC分类号： C07D261/08 , C07D261/20 , A61P31/04 , A61P31/12
摘要： Embodiments are directed to a series of novel EPAC antagonists that are designed, synthesized and evaluated in an effort to develop diversified analogues based on the scaffold of the previously identified high-throughput (HTS) hit ESI-09.

4. 发明申请

US20190092749A1 EPAC1 ACTIVATORS AS HIV LATENCY REVERSAL AGENTS (LRA) 审中-公开
公开(公告)号：US20190092749A1
公开(公告)日：2019-03-28
申请号：US16034558
申请日：2018-07-13
申请人： Haitao Hu , Jia Zhou , Zhiqing Liu , Xiuzhen Fan
发明人： Haitao Hu , Jia Zhou , Zhiqing Liu , Xiuzhen Fan
IPC分类号： C07D401/12 , A61P31/18 , C07D417/12 , C07D209/12 , C07D209/24 , C07D307/79
摘要： The invention relates generally to novel EPAC1 activators, such as Formula I and the preparation thereof as well as the use of EPAC1 activators as human immunodeficiency virus (HIV) latency reversal agents (LRAs).

5. 发明授权

US10975059B2 Small molecule BRD4 modulators for HIV epigenetic regulation 有权
公开(公告)号：US10975059B2
公开(公告)日：2021-04-13
申请号：US16441748
申请日：2019-06-14
申请人： Haitao Hu , Jia Zhou , Zhiqing Liu
发明人： Haitao Hu , Jia Zhou , Zhiqing Liu
IPC分类号： C07D403/02 , C07D403/06 , A61P31/18 , C07D207/48 , C07D401/06
摘要： The invention relates generally to novel small molecule BRD4 modulators for HIV, the preparation thereof as well as the use thereof.

6. 发明申请

US20190292168A1 NOVEL SMALL MOLECULE BRD4 MODULATORS FOR HIV EPIGENETIC REGULATION 审中-公开
公开(公告)号：US20190292168A1
公开(公告)日：2019-09-26
申请号：US16441748
申请日：2019-06-14
申请人： Haitao Hu , Jia Zhou , Zhiqing Liu
发明人： Haitao Hu , Jia Zhou , Zhiqing Liu
IPC分类号： C07D403/06 , C07D401/06 , C07D207/48 , A61P31/18
摘要： The invention relates generally to novel small molecule BRD4 modulators for HIV, the preparation thereof as well as the use thereof.

7. 发明授权

US07765663B2 Method for manufactuing a chair seat 失效
标题翻译：制造椅座的方法
公开(公告)号：US07765663B2
公开(公告)日：2010-08-03
申请号：US12061666
申请日：2008-04-03
申请人： Zhiqing Liu
发明人： Zhiqing Liu
IPC分类号： B68G7/00
CPC分类号： A47C7/02 , B29C45/1671 , B29L2031/443 , Y10T29/48 , Y10T29/481
摘要： A method for manufacturing a chair seat, wherein borders of the chair seat is injection molded by two steps, comprises following steps: a. preparing net cloth, inner border injecting mold, outer border injecting mold, plastic and gun screw; b. injecting inner border: warming up inner border injecting mold, simultaneously heating up the plastic, and injecting the plastic into the inner border injecting mold when its temperature reaches the injecting temperature; c. installing the net cloth: cutting out the net cloth according to the size of the inner border, impacting the edge of the net cloth into the inner border by the gun screw by hand, and then cutting redundant net cloth; d. injecting outer border: inserting the inner border with impacted net cloth into the outer border injecting mold, and injecting the plastic into the outer border injecting mold when its temperature reaches the injecting temperature.
摘要翻译：一种用于制造椅座的方法，其中椅子座的边界通过两个步骤注射成型，包括以下步骤：a。内网注塑模具，外框注塑模具，塑胶枪和螺丝钉; b。注射内部边界：加热内边界注射模具，同时加热塑料，当其温度达到注射温度时，将塑料注入内边界注射模具; C。安装网布：根据内部边框的尺寸切割网布，用手将喷丝螺丝冲入网边缘进入内边缘，然后切割冗余网布; d。注射外部边界：将带有冲击网布的内边框插入外边界注射模具中，并且当其温度达到注射温度时，将塑料注射到外边界注射模具中。

8. 发明授权

US06989979B1 Active ESD shunt with transistor feedback to reduce latch-up susceptibility 有权
标题翻译：主动ESD分流与晶体管反馈，以减少闭锁敏感性
公开(公告)号：US06989979B1
公开(公告)日：2006-01-24
申请号：US10605321
申请日：2003-09-22
申请人： Paul C. F. Tong , Wensong Chen , Ping Ping Xu , Zhiqing Liu
发明人： Paul C. F. Tong , Wensong Chen , Ping Ping Xu , Zhiqing Liu
IPC分类号： H02H3/20 , H02H9/04
CPC分类号： H01L27/0285
摘要： A VDD-to-VSS clamp shunts current from a power node to a ground node within an integrated circuit chip when an electro-static-discharges (ESD) event occurs. A resistor and capacitor in series between power and ground generates a low voltage on a trigger node between the resistor and capacitor when an ESD event occurs. A p-channel transistor with its gate driven by the trigger node turns on, driving a gate node high. The gate node is the gate of an n-channel shunt transistor that shunts ESD current from power to ground. A p-channel feedback transistor terminates the ESD shunt current. The p-channel feedback transistor is connected between power and the trigger node, in parallel with the resistor, and has the gate node as its gate. When a latch up trigger occurs, such as electron injection, voltage drops across an N-well of the resistor is prevented by the parallel p-channel feed-back transistor.
摘要翻译：当发生静电放电（ESD）事件时，VDD至VSS钳位将电流从集成电路芯片内的电源节点分流到接地节点。电源和地之间串联的电阻和电容在ESD事件发生时在电阻和电容之间的触发节点产生低电压。由触发器节点驱动的栅极的p沟道晶体管导通，驱动栅极节点。栅极节点是将ESD电流从电源分流到地的n沟道并联晶体管的栅极。 p沟道反馈晶体管终止ESD分流电流。 p沟道反馈晶体管与电阻并联连接在功率与触发节点之间，栅极节点为栅极。当发生闩锁触发（例如电子注入）时，由并联的p沟道反馈晶体管阻止电阻器的N阱上的电压降。

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