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1. 发明专利

JPS62288191A METHOD FOR GROWING SINGLE CRYSTAL AND DEVICE THEREFOR 失效
公开(公告)号：JPS62288191A
公开(公告)日：1987-12-15
申请号：JP13203486
申请日：1986-06-06
申请人： KYUSHU DENSHI KINZOKU KK
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B15/00 , C30B15/30 , H01L21/18 , H01L21/208
摘要： PURPOSE:To contrive to prevent falling, collapse, etc., of single crystal followed by breakage of small diameter part formed at an initial period, by reducing the diameter of single crystal once to form an engaging neck part and engaging a hanging means with the neck part. CONSTITUTION:Seed crystal 3 is fixed to a supporting lever 2, dropped, immersed in melt in a crucible 1 and raised while being rotated to grow a small diameter part 4a of seed crystal 4. Then, pulling up speed is reduced, diameter of single crystal 4 is enlarged, a large diameter part 4b is formed and the diameter is rapidly lessened to form a small diameter part 4c. The diameter is rapidly enlarged again to the diameter of single crystal as a product to form a shoulder part 4d and successively a pillar-shaped part is grown until desired length. In the middle of growth, a neck part produced by the large diameter part 4b and the small diameter part 4c of the single crystal 4 is supported by a hanging means 5 and growth is continued. Safety in crystal growth is raised by this method.

2. 发明专利

JPS59111997A Device for epitaxial growth 失效
标题翻译：外来成长装置
公开(公告)号：JPS59111997A
公开(公告)日：1984-06-28
申请号：JP21979082
申请日：1982-12-14
申请人： Kyushu Denshi Kinzoku Kk
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B25/08 , C30B25/10 , H01L21/205
CPC分类号： C30B25/08
摘要： PURPOSE:In an upright device for epitaxial growth, to improve quality of product and to raise productivity, by forming reflection layers made of a material having high reflectance on the inner faces of a metallic bell-jar and a substrate base, respectively. CONSTITUTION:The reflection layers made of Silver, gold, aluminum, etc. are formed on the inner faces of the metallic bell-jar 1-1 and the substrate base 1-2, and cooled with water by the cooling pipe 2. A wafer is set on the susceptor 4 supported by the supporting device 7, heated by the high-frequency coil 5 with rotating the susceptor 4, a reaction gas is fed from the pipe 8-1, hydrogen is made to flow from the inlet 8-2 to carry out epitaxial growth. In the operation, loss of radiation heat released from the susceptor 4 and the surface of the wafer 6 is prevented by the reflection layers 14, the temperature gradient and temperature distribution in the susceptor 4 are extremely improved and quality is greatly raised.
摘要翻译：目的：在用于外延生长的直立装置中，通过分别在金属钟形瓶和基板基底的内表面上形成由具有高反射率的材料制成的反射层，从而提高产品质量并提高生产率。构成：在金属钟形瓶1-1和基板基体1-2的内表面上形成由银，金，铝等制成的反射层，并通过冷却管2用水冷却。晶片被设置在由支撑装置7支撑的基座4上，由基座4旋转而被高频线圈5加热，从管8-1供给反应气体，使氢从入口8-2流出进行外延生长。在操作中，通过反射层14防止从基座4和晶片6的表面放出的辐射热的损失，基座4中的温度梯度和温度分布极大地提高，并且质量大大提高。

3. 发明专利

JPS59199598A Apparatus for crystal growth 失效
标题翻译：晶体生长装置
公开(公告)号：JPS59199598A
公开(公告)日：1984-11-12
申请号：JP7457783
申请日：1983-04-26
申请人： Kyushu Denshi Kinzoku Kk
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B13/18 , C30B15/10 , C30B15/14 , C30B15/16
CPC分类号： C30B15/10
摘要： PURPOSE:To prevent the radiation heat loss of the furnace of a metallic apparatus for producing single crystal rod, and to improve the temperature distribution in the furnace, by attaching a silver reflective layer to the inner surface of a device enclosing the high-temperature part in the apparatus, and cooling the silver layer with water. CONSTITUTION:The reflective layer 19-1 made of silver or silver-plated steel plate, etc. having high reflective coefficint is attached to the inner face of the upper lid 1-1 of the pulling chamber in the apparatus for the growth of a single crystal by pulling method, and the reflective layer is cooled with water by passing water through the inlet and outlet 12 of the cooling pipe. Similar reflective layers 19-2 and 19-3 are attached to the inner sides of the body 1-2 and the lower flange 1-3, and cooled by passing water through the inlet and outlet 12. The electrical power consumption for melting the raw material can be reduced, and the time for melting can be shortened by this apparatus.
摘要翻译：目的：为了防止用于制造单晶棒的金属装置的炉子的辐射热损失，并且为了提高炉内的温度分布，通过将银反射层附着到包围高温部件的装置的内表面在设备中，并用水冷却银层。构成：在具有高反射系数的银或镀银钢板等制成的反射层19-1附接到用于生长单个的装置中的拉动室的上盖1-1的内表面通过拉伸方法制造晶体，并且通过使水通过冷却管的入口和出口12，用水冷却反射层。类似的反射层19-2和19-3附接到主体1-2和下凸缘1-3的内侧，并且通过使水通过入口和出口12而被冷却。用于熔化原料可以减少材料，并且可以通过该装置缩短熔融时间。

4. 发明专利

JPH0565477B1 失效
公开(公告)号：JPH0565477B1
公开(公告)日：1993-09-17
申请号：JP13203486
申请日：1986-06-06
申请人： KYUSHU DENSHI KINZOKU KK
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B15/00 , C30B15/30 , H01L21/18 , H01L21/208

5. 发明专利

JPH0471871B2 失效
公开(公告)号：JPH0471871B2
公开(公告)日：1992-11-16
申请号：JP7457783
申请日：1983-04-26
申请人： KYUSHU DENSHI KINZOKU KK
发明人： MARUYAMA MITSUHIRO
IPC分类号： C30B13/18 , C30B15/10 , C30B15/14 , C30B15/16

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