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    • 6. 发明申请
    • Method for scheduling guaranteed bit rate service based on quality of service
    • 基于服务质量调度保证比特率服务的方法
    • US20120320745A1
    • 2012-12-20
    • US13579944
    • 2010-05-20
    • Xianwen ShiYong YuTao Lu
    • Xianwen ShiYong YuTao Lu
    • H04W28/16
    • H04W72/1247H04L47/801H04L47/805
    • The disclosure discloses a method for scheduling a Guaranteed Bit Rate (GBR) service based on Quality of Service (QoS) and an apparatus implementing the method, wherein the method comprises the steps of: determining a scheduling priority of an online user according to an average rate of a GBR service of the user in a current Transmission Time Interval (TTI); and scheduling the user in accordance with the determined priority and allocating Resource Block (RB) resources to the user. With the scheduling method of the disclosure, the RB resource can be fully utilized, and the user rate which does not reach the GBR is quickly improved to make as many users as possible to reach the GBR, so as to increase the number of satisfied users in system. For the case in which a Maximum Bit Rate (MBR) is greater than the GBR, on the basis that as many users as possible are made to reach the GBR, the rates of the users can be further improved to increase the number of users with high rates.
    • 本公开公开了一种基于服务质量(QoS)调度保证比特率(GBR)服务的方法和实现该方法的装置,其中,所述方法包括以下步骤:根据平均值确定在线用户的调度优先级 在当前传输时间间隔(TTI)中用户的GBR服务的速率; 并根据确定的优先级调度用户,并向用户分配资源块(RB)资源。 利用本公开的调度方法,可以充分利用RB资源,快速提高不达到GBR的用户速率,尽可能多的用户达到GBR,从而增加满足用户数量 在系统中。 对于最大比特率(MBR)大于GBR的情况,基于尽可能多的用户达到GBR,可以进一步改善用户的速率以增加用户的数量 高利率。
    • 7. 发明申请
    • Method for manufacturing a programmable eraseless memory
    • 制造可编程擦除存储器的方法
    • US20050037546A1
    • 2005-02-17
    • US10641897
    • 2003-08-15
    • Chih YehHan LaiWen TsaiTao LuChih Lu
    • Chih YehHan LaiWen TsaiTao LuChih Lu
    • G11C11/56H01L27/10H01L21/44H01L21/82
    • G11C11/5692H01L27/101
    • A method for manufacturing an electrically programmable non-volatile memory cell comprises forming a first electrode on a substrate, forming an inter-electrode layer of material on the first electrode having a property which is characterized by progressive change in response to stress, and forming a second electrode over the inter-electrode layer of material. The inter-electrode layer comprises a dielectric layer, such as ultra-thin oxide, between the first and second electrodes. A programmable resistance, or other property, is established by stressing the dielectric layer, representing stored data. Embodiments of the memory cell are adapted to store multiple bits of data per cell and/or adapted for programming more than one time without an erase process.
    • 一种用于制造电可编程非易失性存储单元的方法包括在衬底上形成第一电极,在第一电极上形成具有特征在于应力的响应逐渐变化的特性的材料的电极间层,并形成 第二电极在材料的电极间层之上。 电极间层包括在第一和第二电极之间的介电层,例如超薄氧化物。 可编程电阻或其他属性通过强调介电层来表示存储的数据来建立。 存储器单元的实施例适于存储每个单元的多个数据位和/或适于在不进行擦除处理的情况下编程多于一次。