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    • 1. 发明申请
    • METHOD AND STRUCTURE FOR DOUBLE LINING FOR SHALLOW TRENCH ISOLATION
    • 用于浅层隔离的双层衬垫的方法和结构
    • US20070087519A1
    • 2007-04-19
    • US11536458
    • 2006-09-28
    • Liu Chi-KangXin WangZe Li
    • Liu Chi-KangXin WangZe Li
    • H01L21/76H01L29/76H01L29/94H01L31/00
    • H01L21/76232
    • A method of forming an integrated circuit device structure having a design rule of less than 0.13 micron. The method includes providing a substrate and forming a pad oxide layer overlying the substrate. The method includes forming a nitride layer overlying the pad oxide layer and patterning the nitride layer and pad oxide layer. A trench structure is formed within a thickness of the substrate using the patterned nitride layer and pad oxide layer as hard mask. The method forms a first thickness of liner oxide within the trench structure using at least thermal oxidation of an exposed region of the trench structure to cover the trench structure. Such thermal oxidation causes a rounding region near corners of the trench structure. The method selectively removes the thickness of liner oxide within the trench structure. The method forms a second thickness of liner oxide within the trench structure using at least thermal oxidation to cover the trench structure. The thermal oxidation causes a further rounding of the rounded region near corners of the trench structure. The method also selectively removes the patterned nitride layer while the second thickness of liner oxide protects the substrate in the trench region.
    • 一种形成设计规则小于0.13微米的集成电路器件结构的方法。 该方法包括提供衬底和形成覆盖衬底的衬垫氧化物层。 该方法包括形成覆盖衬垫氧化物层的氮化物层,并对氮化物层和焊盘氧化物层进行构图。 使用图案化氮化物层和衬垫氧化物层作为硬掩模,在衬底的厚度内形成沟槽结构。 该方法使用沟槽结构的暴露区域的至少热氧化覆盖沟槽结构,在沟槽结构内形成衬垫氧化物的第一厚度。 这种热氧化导致沟槽结构的拐角附近的圆形区域。 该方法选择性地去除了沟槽结构内的衬里氧化物的厚度。 该方法使用至少热氧化覆盖沟槽结构在沟槽结构内形成衬垫氧化物的第二厚度。 热氧化导致沟槽结构的拐角附近的圆形区域进一步的圆化。 该方法还选择性地去除图案化的氮化物层,同时衬垫氧化物的第二厚度保护沟槽区域中的衬底。
    • 2. 发明授权
    • Method and structure for double lining for shallow trench isolation
    • 双层衬砌浅沟槽隔离方法与结构
    • US07682929B2
    • 2010-03-23
    • US11536458
    • 2006-09-28
    • Liu Chi-KangXin WangZe Ki Li
    • Liu Chi-KangXin WangZe Ki Li
    • H01L21/76
    • H01L21/76232
    • A method of forming an integrated circuit device structure having a design rule of less than 0.13 micron. The method includes providing a substrate and forming a pad oxide layer overlying the substrate. The method includes forming a nitride layer overlying the pad oxide layer and patterning the nitride layer and pad oxide layer. A trench structure is formed within a thickness of the substrate using the patterned nitride layer and pad oxide layer as hard mask. The method forms a first thickness of liner oxide within the trench structure using at least thermal oxidation of an exposed region of the trench structure to cover the trench structure. Such thermal oxidation causes a rounding region near corners of the trench structure. The method selectively removes the thickness of liner oxide within the trench structure. The method forms a second thickness of liner oxide within the trench structure using at least thermal oxidation to cover the trench structure. The thermal oxidation causes a further rounding of the rounded region near corners of the trench structure. The method also selectively removes the patterned nitride layer while the second thickness of liner oxide protects the substrate in the trench region.
    • 一种形成设计规则小于0.13微米的集成电路器件结构的方法。 该方法包括提供衬底并形成覆盖衬底的衬垫氧化物层。 该方法包括形成覆盖衬垫氧化物层的氮化物层,并对氮化物层和焊盘氧化物层进行构图。 使用图案化氮化物层和衬垫氧化物层作为硬掩模,在衬底的厚度内形成沟槽结构。 该方法使用沟槽结构的暴露区域的至少热氧化覆盖沟槽结构,在沟槽结构内形成衬垫氧化物的第一厚度。 这种热氧化导致沟槽结构的拐角附近的圆形区域。 该方法选择性地去除了沟槽结构内的衬里氧化物的厚度。 该方法使用至少热氧化覆盖沟槽结构在沟槽结构内形成衬垫氧化物的第二厚度。 热氧化导致沟槽结构的拐角附近的圆形区域进一步的圆化。 该方法还选择性地去除图案化的氮化物层,同时衬垫氧化物的第二厚度保护沟槽区域中的衬底。
    • 10. 发明授权
    • Shadow detection method and device
    • 阴影检测方法和设备
    • US09142011B2
    • 2015-09-22
    • US14276053
    • 2014-05-13
    • Shengyin FanXin WangQian WangGang Qiao
    • Shengyin FanXin WangQian WangGang Qiao
    • G06T5/00G06T7/00
    • G06T5/008G06T7/11G06T7/194G06T2200/04G06T2207/10012G06T2207/10024G06T2207/30196G06T2207/30232
    • Disclosed are a shadow detection method and device. The method includes a step of obtaining a depth/disparity map and color/grayscale image from a two-lens camera or stereo camera; a step of detecting and acquiring plural foreground points; a step of projecting the acquired plural foreground points into a 3-dimensional coordinate system; a step of carrying out, in the 3-dimensional coordinate system, a clustering process with respect to the projected plural foreground points so as to divide the projected plural foreground points into one or more point clouds; a step of calculating density distribution of each of the one or more point clouds by adopting a principal component analysis algorithm so as to obtain one or more principal component values of the corresponding point cloud; and a step of determining, based on the one or more principal component values, whether the corresponding point cloud is a shadow.
    • 公开了一种阴影检测方法和装置。 该方法包括从双镜头相机或立体相机获取深度/视差图和彩色/灰度图像的步骤; 检测并获取多个前景点的步骤; 将所获取的多个前景点投影到三维坐标系中的步骤; 在三维坐标系中执行相对于投影的多个前景点的聚类处理,以将投影的多个前景点划分成一个或多个点云的步骤; 通过采用主成分分析算法计算一个或多个点云中的每一个点的密度分布以便获得对应点云的一个或多个主成分值的步骤; 以及基于所述一个或多个主成分值来确定对应的点云是否是阴影的步骤。