会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • Method For Fabricating Thin Films
    • 薄膜制造方法
    • US20090246530A1
    • 2009-10-01
    • US12401967
    • 2009-03-11
    • Makoto MurakamiZhendong HuYong CheBing LiuYuzuru UeharaZhenlin Liu
    • Makoto MurakamiZhendong HuYong CheBing LiuYuzuru UeharaZhenlin Liu
    • B32B9/04C23C14/28C23C14/30B05B5/025
    • C23C14/08C23C14/083C23C14/086C23C14/14C23C14/28C23C14/54Y10T428/31504
    • A method of pulsed laser deposition (PLD) capable of continuously tuning formed-film morphology from that of a nanoparticle aggregate to a smooth thin film free of particles and droplets. The materials that can be synthesized using various embodiments of the invention include, but are not limited to, metals, alloys, metal oxides, and semiconductors. In various embodiments a ‘burst’ mode of ultrashort pulsed laser ablation and deposition is provided. Tuning of the film morphology is achieved by controlling the burst-mode parameters such as the number of pulses and the time-spacing between the pulses within each burst, the burst repetition rate, and the laser fluence. The system includes an ultrashort pulsed laser, an optical system for delivering a focused onto the target surface with an appropriate energy density, and a vacuum chamber in which the target and the substrate are installed and background gases and their pressures are appropriately adjusted.
    • 脉冲激光沉积(PLD)的方法,其能够将形成膜的形态从纳米颗粒聚集体的形态连续调节到没有颗粒和液滴的平滑薄膜。 可以使用本发明的各种实施方案合成的材料包括但不限于金属,合金,金属氧化物和半导体。 在各种实施例中,提供了超短脉冲激光烧蚀和沉积的“突发”模式。 通过控制脉冲串模式参数,例如脉冲数和每个脉冲之间的脉冲之间的时间间隔,脉冲串重复频率和激光能量密度来实现电影形态的调整。 该系统包括超短脉冲激光器,用于以适当的能量密度传递聚焦到目标表面上的光学系统,以及真空室,其中靶和基底被安装在其中,背景气体及其压力被适当地调整。
    • 2. 发明申请
    • P-Type Semiconductor Zinc Oxide Films Process for Preparation Thereof, and Pulsed Laser Deposition Method Using Transparent Substrates
    • P型半导体氧化锌薄膜及其制备方法及使用透明基板的脉冲激光沉积方法
    • US20100000466A1
    • 2010-01-07
    • US12558038
    • 2009-09-11
    • Bing LIUZhendong HuYong CheYuzuru Uehara
    • Bing LIUZhendong HuYong CheYuzuru Uehara
    • H01L21/465
    • C23C14/22C23C14/083C23C14/28
    • A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
    • 公开了一种p型半导体氧化锌(ZnO)膜及其制备方法。 该膜与磷(P)和锂(Li)共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程,其包括脉冲激光源,在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射,穿过衬底,然后聚焦在靶上。 通过将基板朝向目标平移,这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征,其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸,其尺寸可以与激光焦点类似,并且提供用于直接沉积图案化材料的新颖方法。
    • 3. 发明授权
    • P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
    • P型半导体氧化锌膜的制造方法以及使用透明基板的脉冲激光沉积法
    • US07608308B2
    • 2009-10-27
    • US11405020
    • 2006-04-17
    • Bing LiuZhendong HuYong CheYuzuru Uehara
    • Bing LiuZhendong HuYong CheYuzuru Uehara
    • C23C14/30H05B7/00C23C8/00
    • C23C14/22C23C14/083C23C14/28
    • A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
    • 公开了一种p型半导体氧化锌(ZnO)膜及其制备方法。 该膜与磷(P)和锂(Li)共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程,其包括脉冲激光源,在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射,穿过衬底,然后聚焦在靶上。 通过将基板朝向目标平移,这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征,其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸,其尺寸可以与激光焦点类似,并且提供用于直接沉积图案化材料的新颖方法。
    • 4. 发明申请
    • P-type semiconductor zinc oxide films process for preparation thereof, and pulsed laser deposition method using transparent substrates
    • P型半导体氧化锌膜的制造方法以及使用透明基板的脉冲激光沉积法
    • US20070243328A1
    • 2007-10-18
    • US11405020
    • 2006-04-17
    • Bing LiuZhendong HuYong CheYuzuru Uehara
    • Bing LiuZhendong HuYong CheYuzuru Uehara
    • C23C16/00C23C14/30
    • C23C14/22C23C14/083C23C14/28
    • A p-type semiconductor zinc oxide (ZnO) film and a process for preparing the film are disclosed. The film is co-doped with phosphorous (P) and lithium (Li). A pulsed laser deposition scheme is described for use in growing the film. Further described is a process of pulsed laser deposition using transparent substrates which includes a pulsed laser source, a substrate that is transparent at the wavelength of the pulsed laser, and a multi-target system. The optical path of the pulsed laser is arranged in such a way that the pulsed laser is incident from the back of the substrate, passes through the substrate, and then focuses on the target. By translating the substrate towards the target, this geometric arrangement enables deposition of small features utilizing the root of the ablation plume, which can exist in a one-dimensional transition stage along the target surface normal, before the angular width of the plume is broadened by three-dimensional adiabatic expansion. This can provide small deposition feature sizes, which can be similar in size to the laser focal spot, and provides a novel method for direct deposition of patterned materials.
    • 公开了一种p型半导体氧化锌(ZnO)膜及其制备方法。 该膜与磷(P)和锂(Li)共掺杂。 描述脉冲激光沉积方案用于生长膜。 进一步描述的是使用透明衬底的脉冲激光沉积过程,其包括脉冲激光源,在脉冲激光的波长处是透明的衬底和多目标系统。 脉冲激光器的光路布置成使得脉冲激光从衬底的背面入射,穿过衬底,然后聚焦在靶上。 通过将基板朝向目标平移,这种几何布置可以在羽流的角宽度扩大之前利用消融羽流的根部沉积小特征,其可以沿着目标表面法线存在于一维过渡阶段中 三维绝热膨胀。 这可以提供小的沉积特征尺寸,其尺寸可以与激光焦点类似,并且提供用于直接沉积图案化材料的新颖方法。
    • 5. 发明申请
    • HIGH POWER FIBER CHIRPED PULSE AMPLIFICATION SYSTEM UTILIZING TELECOM-TYPE COMPONENTS
    • 高功率光纤激光放大系统利用电信类型组件
    • US20090285249A1
    • 2009-11-19
    • US12502255
    • 2009-07-14
    • Xinhua GUYuzuru UeharaDonald Harter
    • Xinhua GUYuzuru UeharaDonald Harter
    • H01S3/098H01S3/10
    • H01S3/2333H01S3/0057H01S3/0085H01S3/06725H01S3/06754H01S3/094003H01S3/0941H01S3/1608H01S3/1618H01S3/2316
    • A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.
    • 一种具有锁模激光器和高速脉冲选择器的啁啾脉冲放大器(CPA)系统,其中脉冲选择器基于施加的调制电压来调制输出脉冲。 脉冲选择器可以是集成电光调制器,例如LiNbO 3调制器或电吸收调制器。 减少或消除了一些现有设计中与自由空间对准和操作稳定性相关的困难。 光纤耦合通常简化光束传输和对准。 一些实施例包括以约1550纳米的波长工作的基于铒光纤(或铒 - 镱)的CPA系统。 在其他波长下可以获得类似的性能,例如1.06微米的Yb掺杂光纤系统。 此外,可以在避免脉冲选择器中的非线性效应的同时实现输出端的高放大和峰值强度,从而提供高强度皮秒或飞秒操作。
    • 6. 发明授权
    • Terahertz wave generation device and method for generating terahertz wave
    • 太赫兹波发生装置及其产生太赫兹波的方法
    • US08497490B2
    • 2013-07-30
    • US13060945
    • 2009-08-24
    • Hideyuki OhtakeYuzuru UeharaKoichiro TanakaMasaya Nagai
    • Hideyuki OhtakeYuzuru UeharaKoichiro TanakaMasaya Nagai
    • G21K5/00
    • G02F1/39G02F2203/13
    • A terahertz wave generation device is provided with an ultra-short pulse laser light source (3) for generating ultra-short pulse laser light at a single repeating frequency and optical fibers (F1 to F5) for respective transmitting and projecting of the ultra-short pulse laser light to an LN crystal (15). Projection units (13) of the optical fibers (F1 to F5) are made parallel to irradiate the ultra-short pulse laser light (L) projected from the projection units (13), respectively, on terahertz transmission line (A) in the LN crystal (15) with sequential delays. The optical lengths of the transmission paths of the optical fibers (F1 to F5) are set longer as the transmission paths go closer to one side of the parallel direction of the projection units (13).
    • 太赫兹波发生装置设置有用于以单个重复频率产生超短脉冲激光的超短脉冲激光光源(3)和用于分别传输和投射超短波的光纤(F1至F5) 脉冲激光到LN晶体(15)。 使光纤(F1〜F5)的投影单元(13)平行地照射在投影单元(13)上投射的超短脉冲激光(L)在LN的太赫兹传输线(A)上 晶体(15)具有连续延迟。 随着传输路径更靠近投影单元(13)的平行方向的一侧,光纤(F1至F5)的传输路径的光学长度被设定得更长。
    • 7. 发明授权
    • High power fiber chirped pulse amplification system utilizing telecom-type components
    • 大功率光纤啁啾脉冲放大系统利用电信型元件
    • US07567376B2
    • 2009-07-28
    • US12171780
    • 2008-07-11
    • Xinhua GuYuzuru UeharaDonald Harter
    • Xinhua GuYuzuru UeharaDonald Harter
    • H04B10/17H01S3/00
    • H01S3/2333H01S3/0057H01S3/0085H01S3/06725H01S3/06754H01S3/094003H01S3/0941H01S3/1608H01S3/1618H01S3/2316
    • A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 .micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.
    • 一种具有锁模激光器和高速脉冲选择器的啁啾脉冲放大器(CPA)系统,其中脉冲选择器基于施加的调制电压来调制输出脉冲。 脉冲选择器可以是集成电光调制器,例如LiNbO 3调制器或电吸收调制器。 减少或消除了一些现有设计中与自由空间对准和操作稳定性相关的困难。 光纤耦合通常简化光束传输和对准。 一些实施例包括以约1550纳米的波长工作的基于铒光纤(或铒 - 镱)的CPA系统。 可以在其他波长下获得类似的性能,例如1.06微米的Yb掺杂的光纤系统。 此外,可以在避免脉冲选择器中的非线性效应的同时实现输出端的高放大和峰值强度,从而提供高强度皮秒或飞秒操作。
    • 9. 发明授权
    • High power fiber chirped pulse amplification system utilizing telecom-type components
    • 大功率光纤啁啾脉冲放大系统利用电信型元件
    • US07907334B2
    • 2011-03-15
    • US12502255
    • 2009-07-14
    • Xinhua GuYuzuru UeharaDonald Harter
    • Xinhua GuYuzuru UeharaDonald Harter
    • H04B10/17H01S3/098H01S3/10
    • H01S3/2333H01S3/0057H01S3/0085H01S3/06725H01S3/06754H01S3/094003H01S3/0941H01S3/1608H01S3/1618H01S3/2316
    • A chirped pulse amplifier (CPA) system having a mode-locked laser and a high-speed pulse selector, wherein the pulse selector modulates output pulses based upon an applied modulation voltage. A pulse selector may be an integrated electro-optic modulator, for example a LiNbO3 modulator, or an electro-absorption modulator. Difficulties related to free-space alignment and operational stability of some prior designs are reduced or eliminated. Fiber coupling generally simplifies beam delivery and alignment. Some embodiments include an erbium fiber (or erbium-ytterbium) based CPA system operating at a wavelength of approximately 1550 nanometers. Similar performance can be obtained at other wavelengths, for example a 1.06 micrometer Yb-doped fiber system. Moreover, high amplification and peak intensity at the output may be achieved while avoiding non-linear effects in the pulse selector, thereby providing for high intensity picosecond or femtosecond operation.
    • 具有锁模激光器和高速脉冲选择器的啁啾脉冲放大器(CPA)系统,其中所述脉冲选择器基于所施加的调制电压来调制输出脉冲。 脉冲选择器可以是集成电光调制器,例如LiNbO 3调制器或电吸收调制器。 减少或消除了一些现有设计中与自由空间对准和操作稳定性相关的困难。 光纤耦合通常简化光束传输和对准。 一些实施例包括以约1550纳米的波长工作的基于铒光纤(或铒 - 镱)的CPA系统。 在其他波长下可以获得类似的性能,例如1.06微米的Yb掺杂光纤系统。 此外,可以在避免脉冲选择器中的非线性效应的同时实现输出端的高放大和峰值强度,从而提供高强度皮秒或飞秒操作。