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1. 发明授权

US06770119B2 Mercury removal method and system 有权
标题翻译：汞去除方法和系统
公开(公告)号：US06770119B2
公开(公告)日：2004-08-03
申请号：US10233526
申请日：2002-09-04
申请人： Masahiro Harada , Shintaro Honjo , Makoto Suzaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Suzaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D5314
CPC分类号： C10K1/16 , B01D53/14 , B01D53/64 , B01D2257/602 , C10K1/085 , C10K1/10
摘要： The present invention provides a mercury removal method which can effectively remove very small amounts of mercury components present in a gas during wet gas purification such as coal or heavy oil gasification gas purification and petroleum refining. A mercury removal method for the removal of mercury present in a gas, the method comprising the steps of bringing a gas containing at least mercury and not less than 10 ppm of hydrogen sulfide into gas-liquid contact with an absorbing fluid under pressurized conditions so as to cause mercury to pass into the absorbing fluid; flashing the mercury-containing absorbing fluid under lower-pressure conditions to separate it into gaseous components and liquid components; and removing the mercury contained in the separated gaseous components by adsorption to an adsorbent.
摘要翻译：本发明提供了一种除汞方法，其可以有效地去除在湿气净化中例如煤或重油气化气净化和石油精炼中的气体中存在的非常少量的汞成分。一种用于除去存在于气体中的汞的汞去除方法，该方法包括以下步骤：在加压条件下使至少包含汞和不少于10ppm硫化氢的气体与吸收液体气液接触，以便使汞进入吸收液; 在低压条件下闪烁含汞吸收液，将其分离成气态组分和液体组分; 并且通过吸附到吸附剂上除去分离的气态组分中所含的汞。

2. 发明授权

US07749455B2 Apparatus for treating COS for gas produced by gasification and method for treating COS 有权
标题翻译：用于处理通过气化产生的气体的COS的装置和用于处理COS的方法
公开(公告)号：US07749455B2
公开(公告)日：2010-07-06
申请号：US10522604
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino , Kozo Iida , Akira Johana
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino , Kozo Iida , Akira Johana
IPC分类号： G05D7/00 , B01D53/04 , B01D53/34 , B01D53/52 , B01D53/86 , B01J8/02 , B01J35/02 , C01B17/00 , C01B17/16 , C01B31/00 , C10G17/00 , C10G45/00
CPC分类号： B01J23/866 , B01D53/885 , C10K1/34
摘要： A COS treatment apparatus for a gasified gas includes an O2 removal catalyst and a COS conversion catalyst located on the downstream side of a gasified gas flow with respect to the O2 removal catalyst. Also, a COS treatment apparatus includes a TiO2 catalyst that carries Cr2O3 or NiO. Further, a COS treatment method includes a first step in which O2 is removed by the reaction with H2S and CO, and a second step in which COS is converted to H2S.
摘要翻译：用于气化气体的COS处理装置包括相对于除去氧化催化剂的气化气体流的下游侧的除氧催化剂和COS转化催化剂。此外，COS处理装置包括载持Cr 2 O 3或NiO的TiO 2催化剂。此外，COS处理方法包括通过与H 2 S和CO的反应除去O 2的第一步骤和将COS转化为H 2 S的第二步骤。

3. 发明申请

US20060110304A1 Wet gas purification method and system for practicing the same 有权
标题翻译：湿气净化方法和系统实践相同
公开(公告)号：US20060110304A1
公开(公告)日：2006-05-25
申请号：US10523679
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D53/58
CPC分类号： C10K1/101 , B01D53/14 , B01D2257/406
摘要： The present invention provides a wet gas purification method in which ammonia in the gas is removed, and a system for carrying out said method, characterized in that the method includes a washing step in which ammonia in the gas is absorbed in an absorbent for removal; and an ammonia treating step in which ammonia is stripped from the discharged absorbent at a following stage of the washing step, wherein the absorbent is divided into an off-gas containing ammonia and effluent. In the washing step makeup water is charged continuously or intermittently so that the concentration of ammonia in the gas having passed through the washing step is 10 ppm or lower. According to the present invention, a wet gas purification method can be performed in which the running costs involved in operation is reduced, the manipulation step and system are simple, operation is easy, and the reliability is high.
摘要翻译：本发明提供一种其中除去气体中的氨的湿气净化方法，以及用于实施所述方法的系统，其特征在于，所述方法包括洗涤步骤，其中所述气体中的氨被吸收剂吸收除去; 以及在洗涤步骤的后续阶段从排出的吸收剂中除去氨的氨处理步骤，其中吸收剂被分成含有氨和废水的废气。在洗涤步骤中，连续地或间歇地加入水，使得通过洗涤步骤的气体中的氨浓度为10ppm以下。根据本发明，可以进行操作中涉及的运行成本降低的操作步骤和系统简单，操作容易，可靠性高的湿气净化方法。

4. 发明申请

US20060051263A1 Apparatus for treatment cos for gas produced by gasification and method for treating cos 有权
标题翻译：用于气化产生的气体处理cos的装置和用于处理cos的方法
公开(公告)号：US20060051263A1
公开(公告)日：2006-03-09
申请号：US10522604
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino , Kozo Iida , Akira Johana
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino , Kozo Iida , Akira Johana
IPC分类号： B01J8/02
CPC分类号： B01J23/866 , B01D53/885 , C10K1/34
摘要： There is disclosed a COS treatment apparatus for a gasified gas, in which an O2 removal catalyst and a COS conversion catalyst located on the downstream side of a gasified gas flow with respect to the O2 removal catalyst are provided. Also, there is disclosed a COS treatment apparatus containing a TiO2 catalyst that carries Cr2O3 or NiO. Further, there is disclosed a COS treatment method including a first step in which O2 is removed by the reaction with H2S and CO, and a second step in which COS is converted to H2S.
摘要翻译：公开了一种用于气化气体的COS处理装置，其中位于气化气体的下游侧的O 2 H 2除去催化剂和COS转化催化剂相对于O 2 提供了除去催化剂。

5. 发明授权

US07381389B2 Wet gas purification method and system for practicing the same 有权
标题翻译：湿气净化方法和系统实践相同
公开(公告)号：US07381389B2
公开(公告)日：2008-06-03
申请号：US10523679
申请日：2003-08-06
申请人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
发明人： Masahiro Harada , Shintaro Honjo , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Susumu Okino
IPC分类号： B01D53/58 , B01J10/00
CPC分类号： C10K1/101 , B01D53/14 , B01D2257/406
摘要： A wet gas purification method is provided for removing ammonia from a heavy oil gasification gas, such as coal. The method principally involves a washing step during which absorbent is charged into the gas to absorb ammonia and an ammonia treating step wherein absorbent discharged from the washing step is separated into an effluent and an off-gas containing ammonia. The amount of absorbent charged during the washing step is controlled such that the ammonia concentration of gas exiting the washing step is 10 ppm or less.
摘要翻译：提供湿气净化方法，用于从重油气化气体如煤中除去氨。该方法主要涉及洗涤步骤，在该步骤中将吸收剂装入气体中以吸收氨和氨处理步骤，其中将从洗涤步骤排出的吸收剂分离成流出物和含有氨的废气。控制在洗涤步骤中加入的吸收剂的量使得离开洗涤步骤的气体的氨浓度为10ppm以下。

6. 发明授权

US07005115B2 Gas combustion treatment method and apparatus therefor 有权
公开(公告)号：US07005115B2
公开(公告)日：2006-02-28
申请号：US10245326
申请日：2002-09-18
申请人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
发明人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
IPC分类号： C01B17/16 , C01B31/20 , C01B21/00
CPC分类号： B01D53/58 , B01D53/52 , F23G7/065 , F23J7/00 , F23J15/006 , F23J2215/10
摘要： A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

7. 发明申请

US20060141414A1 Gas combustion treatment method and apparatus therefor 审中-公开
公开(公告)号：US20060141414A1
公开(公告)日：2006-06-29
申请号：US11362148
申请日：2006-02-27
申请人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
发明人： Masahiro Harada , Makoto Susaki , Kazuo Ishida , Hajime Nagano , Masahiro Hirano , Hiroshi Suzumura , Shintaro Honjo , Yoshinori Koyama , Katsuhiko Yokohama , Mitsugi Suehiro
IPC分类号： F23D14/62
CPC分类号： B01D53/58 , B01D53/52 , F23G7/065 , F23J7/00 , F23J15/006 , F23J2215/10 , Y02P20/129
摘要： A gas combustion treatment method for the combustion treatment of an ammonia-containing gas and a hydrogen sulfide-containing gas, the method comprising a first combustion treatment step in which the ammonia-containing gas, together with a fuel, is introduced and burned; a nitrogen oxide reduction step downstream of the first combustion treatment step, in which a portion of the hydrogen sulfide-containing gas or the ammonia-containing gas is introduced and the nitrogen oxides produced in the first combustion treatment step are reduced in a reducing atmosphere; and a second combustion treatment step downstream of the nitrogen oxide reduction step, in which the remaining hydrogen sulfide-containing gas, together with air, is introduced and burned. The present invention provides a combustion apparatus suitable for use as a combustion furnace for off-gases resulting from the wet purification of coal gasification gas.

8. 发明授权

US08017990B2 Nonvolatile semiconductor memory device and method of fabricating the same 失效
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US08017990B2
公开(公告)日：2011-09-13
申请号：US12497955
申请日：2009-07-06
申请人： Hajime Nagano
发明人： Hajime Nagano
IPC分类号： H01L29/788
CPC分类号： H01L27/11519 , H01L27/11521 , H01L27/11524
摘要： A nonvolatile semiconductor memory device includes a gate insulating film formed on a semiconductor substrate, a first gate electrode corresponding to a memory cell transistor and a second gate electrode. The first gate electrode includes a floating gate electrode film, a first interelectrode insulating film and a control gate electrode film. The floating gate electrode film has a polycrystalline silicon film and the control gate electrode film having a silicide film. The second gate electrode includes a lower electrode film, a second interelectrode insulating film and an upper electrode film. The second interelectrode insulating film includes an opening. The lower electrode film includes a void below the opening of the second interelectrode insulating film. The upper electrode film includes a silicide film. The lower electrode film includes a polycrystalline silicon film and a silicide film which is located between the opening and the void.
摘要翻译：非易失性半导体存储器件包括形成在半导体衬底上的栅绝缘膜，对应于存储单元晶体管的第一栅电极和第二栅电极。第一栅电极包括浮栅电极膜，第一电极间绝缘膜和控制栅电极膜。浮栅电极膜具有多晶硅膜，并且控制栅电极膜具有硅化物膜。第二栅电极包括下电极膜，第二电极间绝缘膜和上电极膜。第二电极间绝缘膜包括开口。下电极膜在第二电极间绝缘膜的开口下方具有空隙。上电极膜包括硅化物膜。下电极膜包括位于开口和空隙之间的多晶硅膜和硅化物膜。

9. 发明授权

US07718483B2 Method of manufacturing non-volatile semiconductor memory 失效
标题翻译：制造非易失性半导体存储器的方法
公开(公告)号：US07718483B2
公开(公告)日：2010-05-18
申请号：US11399655
申请日：2006-04-07
申请人： Ichiro Mizushima , Hajime Nagano , Yoshio Ozawa , Hisataka Meguro , Takashi Suzuki
发明人： Ichiro Mizushima , Hajime Nagano , Yoshio Ozawa , Hisataka Meguro , Takashi Suzuki
IPC分类号： H01L21/8238
CPC分类号： H01L27/115 , H01L21/76229 , H01L27/1052 , H01L27/11521
摘要： In a method for manufacturing a non-volatile semiconductor device according to this invention, steps are provided for forming a plurality of first semiconductor portions over a substrate; selectively growing a plurality of second semiconductor portions in contacting with said plurality of first semiconductor portions respectively; partially removing said plurality of second semiconductor portions to prepare a plurality of floating gates with substantially flat surfaces; forming an insulating layer over said plurality of floating gates; and forming a control gate over said insulating layer.
摘要翻译：在根据本发明的用于制造非易失性半导体器件的方法中，提供了用于在衬底上形成多个第一半导体部分的步骤; 选择性地生长与所述多个第一半导体部分接触的多个第二半导体部分; 部分地去除所述多个第二半导体部分以制备具有基本平坦表面的多个浮动栅极; 在所述多个浮动栅极上形成绝缘层; 以及在所述绝缘层上形成控制栅极。

10. 发明授权

US07265017B2 Method for manufacturing partial SOI substrates 失效
标题翻译：制造部分SOI衬底的方法
公开(公告)号：US07265017B2
公开(公告)日：2007-09-04
申请号：US11168914
申请日：2005-06-29
申请人： Hajime Nagano , Ichiro Mizushima
发明人： Hajime Nagano , Ichiro Mizushima
IPC分类号： H01L21/331
CPC分类号： H01L27/1203 , H01L21/84
摘要： There is closed a semiconductor device which comprises a semiconductor substrate including an SOI region where a first insulating film is buried, and a non-SOI region, the semiconductor substrate being provided with a boundary region formed between the SOI region and the non-SOI region and having a second insulating film buried therein, the second insulating film being inclined upward from the SOI region side toward the non-SOI region side, the second insulating film having a thickness smaller than the thickness of the first insulating film and being tapered from the SOI region side to the non-SOI region side, a pair of element isolating insulating regions separately formed in the non-SOI region of semiconductor substrate and defining element regions, a pair of impurity diffusion regions formed in the element regions, and a gate electrode formed via a gate insulating film in the element region of the semiconductor substrate.
摘要翻译：封闭半导体器件，其包括半导体衬底，该半导体衬底包括掩埋有第一绝缘膜的SOI区域和非SOI区域，该半导体衬底设置有形成在SOI区域与非SOI区域之间的边界区域并且具有埋置在其中的第二绝缘膜，所述第二绝缘膜从所述SOI区域侧向非SOI区域侧向上倾斜，所述第二绝缘膜的厚度小于所述第一绝缘膜的厚度， SOI区域侧，分离地形成在半导体衬底的非SOI区域中并限定元件区域的一对元件隔离绝缘区域，形成在元件区域中的一对杂质扩散区域以及栅极电极通过半导体衬底的元件区域中的栅极绝缘膜形成。

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