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1. 发明授权

US09842949B2 High-efficiency solar photovoltaic cells and modules using thin crystalline semiconductor absorbers 有权
公开(公告)号：US09842949B2
公开(公告)日：2017-12-12
申请号：US13807631
申请日：2012-08-09
申请人： Mehrdad M. Moslehi , Pawan Kapur , K.-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
发明人： Mehrdad M. Moslehi , Pawan Kapur , K.-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
IPC分类号： H01L31/0224 , H01L31/0392 , H01L31/068 , H01L31/18 , H01L31/02 , H01L31/0216 , H01L31/0232 , H01L31/0376 , H01L31/075 , H01L31/05 , H01L31/049
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.

2. 发明申请

US20150020877A1 HIGH-EFFICIENCY SOLAR PHOTOVOLTAIC CELLS AND MODULES USING THIN CRYSTALLINE SEMICONDUCTOR ABSORBERS 有权
标题翻译：高效太阳能光伏电池和使用薄晶体半导体吸收器的模块
公开(公告)号：US20150020877A1
公开(公告)日：2015-01-22
申请号：US13807631
申请日：2012-08-09
申请人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
发明人： Mehrdad M. Moslehi , Pawan Kapur , Karl-Josef Kramer , Virendra V. Rana , Sean Seutter , Anand Deshpande , Anthony Calcaterra , Gerry Olsen , Kamran Manteghi , Thom Stalcup , George D. Kamian , David Xuan-Qi Wang , Yen-Sheng Su , Michael Wingert
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/18 , H01L31/075 , H01L31/0376 , H01L31/0216 , H01L31/02
CPC分类号： H01L31/022441 , H01L31/0201 , H01L31/02167 , H01L31/02327 , H01L31/03765 , H01L31/0392 , H01L31/049 , H01L31/0516 , H01L31/0682 , H01L31/075 , H01L31/1812 , H01L31/1896 , Y02E10/547
摘要： Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects as well as Fabrication methods and structures for forming thin film back contact solar cells are described.
摘要翻译：描述了提供太阳能电池基板加强和电互连的背接触太阳能电池的背板以及用于形成薄膜背接触太阳能电池的制造方法和结构的制造方法和结构。

3. 发明授权

US09401276B2 Apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates 有权
标题翻译：用于在多个硅模板的至少两个表面上形成多孔硅层的装置
公开(公告)号：US09401276B2
公开(公告)日：2016-07-26
申请号：US13554103
申请日：2012-07-20
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： H01L21/20 , H01L31/18
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： An apparatus for forming porous silicon layers on at least two surfaces of a plurality of silicon templates in a batch electrochemical anodic etch process is provided. The apparatus comprises a plurality of edge-sealing template mounts operable to prevent formation of porous silicon at the edges of a plurality of templates. An electrolyte is disposed among the plurality of templates. The apparatus further comprises a power supply operable to switch polarity, change current intensity, and control etching time to produce the porous silicon layers.
摘要翻译：提供了一种在批次电化学阳极蚀刻工艺中在多个硅模板的至少两个表面上形成多孔硅层的装置。该装置包括多个边缘密封模板安装件，其可操作以防止在多个模板的边缘处形成多孔硅。在多个模板中设置电解质。该装置还包括可操作以切换极性，改变电流强度和控制蚀刻时间以产生多孔硅层的电源。

4. 发明申请

US20130171808A1 DOUBLE-SIDED REUSABLE TEMPLATE FOR FABRICATION OF SEMICONDUCTOR SUBSTRATES FOR PHOTOVOLTAIC CELL AND MICROELECTRONICS DEVICE MANUFACTURING 有权
标题翻译：用于制造用于光电晶体和微电子器件制造的半导体衬底的双面可重复模板
公开(公告)号：US20130171808A1
公开(公告)日：2013-07-04
申请号：US13554103
申请日：2012-07-20
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , David Xuan-Qi Wang , Pawan Kapur , Somnath Nag , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： H01L21/20
CPC分类号： H01L21/20 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： This disclosure presents manufacturing methods and apparatus designs for making TFSSs from both sides of a re-usable semiconductor template, thus effectively increasing the substrate manufacturing throughput and reducing the substrate manufacturing cost. This approach also reduces the amortized starting template cost per manufactured substrate (TFSS) by about a factor of 2 for a given number of template reuse cycles.
摘要翻译：本公开提供了从可再使用的半导体模板的两侧制造TFSS的制造方法和装置设计，从而有效地增加了基板制造的吞吐量并降低了基板的制造成本。对于给定数量的模板重用周期，这种方法还将每个制造的衬底（TFSS）的平均起始模板成本降低约2倍。

5. 发明申请

US20110030610A1 HIGH-PRODUCTIVITY POROUS SEMICONDUCTOR MANUFACTURING EQUIPMENT 有权
标题翻译：高效多孔半导体制造设备
公开(公告)号：US20110030610A1
公开(公告)日：2011-02-10
申请号：US12774667
申请日：2010-05-05
申请人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
发明人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
IPC分类号： C25F3/12 , C25F7/00 , C30B19/08 , C30B23/06 , C30B25/10
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

6. 发明授权

US08999058B2 High-productivity porous semiconductor manufacturing equipment 有权
标题翻译：高效多孔半导体制造设备
公开(公告)号：US08999058B2
公开(公告)日：2015-04-07
申请号：US12774667
申请日：2010-05-05
申请人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
发明人： George D. Kamian , Somnath Nag , Subbu Tamilmani , Mehrdad M. Moslehi , Karl-Josef Kramer , Takao Yonehara
IPC分类号： C30B1/10 , C25D11/32 , H01L31/18 , C25D17/00 , C25D17/06 , C25D11/00
CPC分类号： C25D11/32 , C25D11/005 , C25D17/001 , C25D17/06 , C25F3/12 , C25F7/00 , H01L31/1892 , Y02E10/50
摘要： This disclosure enables high-productivity fabrication of semiconductor-based separation layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers), optical reflectors (made of multi-layer/multi-porosity porous semiconductors such as porous silicon), formation of porous semiconductor (such as porous silicon) for anti-reflection coatings, passivation layers, and multi-junction, multi-band-gap solar cells (for instance, by forming a variable band gap porous silicon emitter on a crystalline silicon thin film or wafer-based solar cell). Other applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further the disclosure is applicable to the general fields of Photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率地制造基于半导体的分离层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙率或多孔度层构成），光反射器（由多层/多孔多孔半导体孔隙度多孔半导体如多孔硅），用于防反射涂层的多孔半导体（例如多孔硅）的形成，钝化层和多结的多带隙太阳能电池（例如，通过形成可变带隙晶体硅薄膜或晶圆太阳能电池上的多孔硅发射器）。其他应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率并随后氧化的多孔硅形成）。此外，本公开可应用于光伏，MEMS（包括传感器和致动器）的独立或集成半导体微电子，半导体微电子芯片和光电子学的一般领域。

7. 发明申请

US20120192789A1 DEPOSITION SYSTEMS AND PROCESSES 审中-公开
标题翻译：沉积系统和工艺
公开(公告)号：US20120192789A1
公开(公告)日：2012-08-02
申请号：US13341965
申请日：2011-12-31
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Seiichi Yokoi , George D. Kamian , Shashank Sharma , Jay Ashjaee
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Seiichi Yokoi , George D. Kamian , Shashank Sharma , Jay Ashjaee
IPC分类号： C23C16/455 , C23C16/458 , C23C16/52
CPC分类号： C23C16/45502 , C23C16/4412 , C23C16/45517 , C23C16/4582 , C23C16/4583 , C23C16/4587 , C23C16/481 , C30B25/12 , C30B25/14 , C30B29/06
摘要： This disclosure enables gas recovery and utilization for use in deposition systems and processes. The system includes a thin-film semiconductor layer deposition system comprising a deposition reactor, precursor gas feeds, and a gas recovery system.
摘要翻译：该公开使得能够用于沉积系统和工艺中的气体回收和利用。该系统包括薄膜半导体层沉积系统，其包括沉积反应器，前体气体进料和气体回收系统。

8. 发明申请

US20120085278A1 HIGH PRODUCTIVITY THIN FILM DEPOSITION METHOD AND SYSTEM 有权
标题翻译：高生产率薄膜沉积方法和系统
公开(公告)号：US20120085278A1
公开(公告)日：2012-04-12
申请号：US13157250
申请日：2011-06-09
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
IPC分类号： C30B23/06 , H01L21/673 , C30B23/02 , C23C16/455 , C23C16/46
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.
摘要翻译：提供了高生产率薄膜沉积方法和工具，其中厚度在小于1微米至100微米范围内的薄膜半导体材料层沉积在反应器中的多个晶片上。将晶片装载在分批基座上，并且批量基座位于反应器中，使得在基座和反应器的内壁之间形成锥形气体流动空间。然后将反应性气体引导到锥形气体空间中并遍及每个晶片，从而改善每个晶片和从晶片到晶片的沉积均匀性。

9. 发明授权

US09870937B2 High productivity deposition reactor comprising a gas flow chamber having a tapered gas flow space 有权
公开(公告)号：US09870937B2
公开(公告)日：2018-01-16
申请号：US13157250
申请日：2011-06-09
申请人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
发明人： Mehrdad M. Moslehi , Karl-Josef Kramer , Jay Ashjaee , George D. Kamian , David Mordo , Takao Yonehara
IPC分类号： C30B25/14 , H01L21/677 , C23C16/455 , C23C16/48 , C23C16/54 , H01L21/67 , H01L21/02
CPC分类号： H01L21/67754 , C23C16/45585 , C23C16/481 , C23C16/54 , H01L21/02532 , H01L21/0262 , H01L21/6719 , H01L21/67757
摘要： High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

10. 发明申请

US20120145553A1 APPARATUS AND METHODS FOR UNIFORMLY FORMING POROUS SEMICONDUCTOR ON A SUBSTRATE 有权
标题翻译：在基板上均匀形成多孔半导体的装置和方法
公开(公告)号：US20120145553A1
公开(公告)日：2012-06-14
申请号：US13288721
申请日：2011-11-03
申请人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
发明人： Karl-Josef Kramer , Mehrdad M. Moslehi , Subramanian Tamilmani , George D. Kamian , Jay Ashjaee , Takao Yonehara
IPC分类号： C25D7/12 , C25D11/32 , C25B9/00
CPC分类号： C25D11/005 , C25D7/12 , C25D11/022 , C25D11/024 , C25D11/32 , C25D17/001 , C25D17/008 , C25D17/08 , C25D21/04 , C25F7/00
摘要： This disclosure enables high-productivity controlled fabrication of uniform porous semiconductor layers (made of single layer or multi-layer porous semiconductors such as porous silicon, comprising single porosity or multi-porosity layers). Some applications include fabrication of MEMS separation and sacrificial layers for die detachment and MEMS device fabrication, membrane formation and shallow trench isolation (STI) porous silicon (using porous silicon formation with an optimal porosity and its subsequent oxidation). Further, this disclosure is applicable to the general fields of photovoltaics, MEMS, including sensors and actuators, stand-alone, or integrated with integrated semiconductor microelectronics, semiconductor microelectronics chips and optoelectronics.
摘要翻译：本公开使得能够高生产率控制制造均匀的多孔半导体层（由单层或多层多孔半导体（例如多孔硅，包括单孔隙或多孔层）制成）。一些应用包括制造用于脱模和MEMS器件制造，膜形成和浅沟槽隔离（STI）多孔硅的MEMS分离和牺牲层（使用具有最佳孔隙率的多孔硅形成及其随后的氧化）。此外，本公开适用于光伏技术的MEMS领域，包括传感器和执行器，独立的或与集成半导体微电子，半导体微电子芯片和光电子集成。

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