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    • 1. 发明授权
    • Method for production of halogen-containing aromatic compound
    • 含卤素芳香族化合物的制造方法
    • US6433231B2
    • 2002-08-13
    • US88680501
    • 2001-06-21
    • NIPPON CATALYTIC CHEM IND
    • TESHIMA SEIICHIKONISHI MASAYOSHITAJIRI KOZOASAKO YOSHINOBUMIKI SADAO
    • C07C17/12C07B39/00C07C17/14C07C17/18C07C22/08C07C25/22C07C45/41C07C45/63C07C47/55C07C47/00
    • C07C47/55C07B39/00C07C17/14C07C17/18C07C22/08C07C25/22C07C45/41C07C45/63C07C22/04C07C47/546
    • A method for producing inexpensively in a high yield a halogen-containing aromatic compound, particularly a halogen-containing aromatic compound incorporating therein a bromodifluoroalkyl group, and a halogen-containing naphthalene compound useful as a raw material for a resin excelling in heat resistance, chemical resistance and water repellency, and having a low dielectric constant and a low refractivity are provided. This invention relates to a method for the production of an aromatic compound (II) having a (CH2)nCX2Br group (wherein X represents a fluorine or chlorine atom and the X's may be same or different, and n is an integer in the range of 0 to 4) by the reaction of photo-bromination of an aromatic compound (I) having a (CH2)nCX2H group (wherein X and n are as defined above) with a brominating agent, wherein the photo-bromination reaction is carried out while removing hydrogen bromide generated in the reaction system and/or in an atmosphere of a low oxygen content, and a halogen-containing naphthalene compound represented by the following formula (1):wherein Y represents -CF2H, -CF2Br, or -CHO group, Z1 and Z2 independently represent a halogen atom, and p and q independently are an integer in the range of 0 to 3.
    • 以高收率廉价地制造含卤素的芳香族化合物,特别是含有溴二氟烷基的含卤素的芳香族化合物和可用作耐热性优异的树脂的原料的含卤素的萘化合物的方法 电阻和拒水性,并且具有低介电常数和低折射率。 本发明涉及一种具有(CH2)nCX2Br基团的芳族化合物(II)的制备方法(其中X表示氟或氯原子,X可以相同或不同,n是在 通过使具有(CH 2)n C X 2 H基团(其中X和n如上定义的)的芳族化合物(I)与溴化剂进行光溴化反应,其中光溴化反应进行同时 除去在反应体系中和/或低氧气氛中产生的溴化氢和由下式(1)表示的含卤素的萘化合物:其中Y表示-CF 2 H,-CF 2 Br或-CHO基, Z 1和Z 2独立地表示卤原子,p和q独立地为0〜3的整数。
    • 2. 发明授权
    • Process for production of 1,4-bis(difluoroalkyl)benzene derivative
    • 生产1,4-双(二氟烷基)苯衍生物的方法
    • US6384289B2
    • 2002-05-07
    • US75860701
    • 2001-01-11
    • NIPPON CATALYTIC CHEM IND
    • TESHIMA SEIICHIASAKO YOSHINOBU
    • C07C17/093C07C45/56C07C45/59C07C45/60C07D321/00C07D327/02C07D339/00C07C22/08
    • C07D339/00C07C17/093C07C45/56C07C45/567C07C45/59C07C45/60C07D321/00C07D327/02C07C22/04C07C47/55
    • A process is provided which allows a 1,4-bis(difluoroalkyl)benzene derivative to be produced inexpensively by a simple procedure without requiring any special facility. This process comprises causing a compound (A) of the following formula (1):wherein X1, X2, X3, and X4 independently stand for an oxygen or sulfur atom, Y1 and Y2 independently stand for a group of the formula: -CnH2n-, in which n is 2 or 3, k is an integer in the range of 0 to 4, G stands for a halogen group, an alkyl group, a perfluoroalkyl group, or an alkoxy group, and m is an integer in the range of 0 to 4, to react with a fluorine-containing species, the molar ratio of the fluorine-containing species to compound (A) being in the range of 20-40. The process is carried out in the presence of a bromine-containing compound, which is in an amount of 2 to 3 equivalences to the amount of compound (A), in an organic solvent at -80° C. to 30° C., the final concentration of compound (A) being in the range of 3 to 30% by weight.
    • 提供了一种方法,其允许通过简单的方法廉价地生产1,4-双(二氟烷基)苯衍生物,而不需要任何特殊设备。 该方法包括使下式(1)的化合物(A):其中X1,X2,X3和X4独立地代表氧或硫原子,Y1和Y2独立地表示下式的基团:-CnH2n- ,其中n为2或3,k为0至4的整数,G表示卤素基团,烷基,全氟烷基或烷氧基,m为在 0至4,与含氟物质反应时,含氟物质与化合物(A)的摩尔比在20-40范围内。 该方法在-80℃至30℃的有机溶剂中,在化合物(A)的量为2〜3当量的含溴化合物的存在下进行, 化合物(A)的最终浓度在3〜30重量%的范围内。
    • 7. 发明专利
    • DE69909932D1
    • 2003-09-04
    • DE69909932
    • 1999-10-20
    • NIPPON CATALYTIC CHEM IND
    • ITO SHOJIMURATA KAZUHIKOAIZAWA RYUJIASAKO YOSHINOBU
    • C08G61/12C08G73/02H01B1/12
    • The sulfonation of a polyaniline or a derivative thereof by the use of a sulfonating agent, characterized by dispersing the polyaniline or the derivative thereof in a reaction solvent thereby inhibiting the formation of lumps of grains due to substantial aggregation. Preferably, the solvent for the reaction is an organic solvent incapable of reacting with the sulfonating agent. The initial stirring power for the reaction of sulfonation is preferred to be not less than 0.03 kW/m and the polyaniline or the derivative thereof is preferred to have a water content of not more than 8 wt. %. Further, this invention is characterized by subjecting a polyaniline having introduced a sulfonic acid group therein or a derivative thereof to hydrolysis in a mixed solution of water with a hydrophilic organic solvent. The hydrophilic organic solvent is preferred to be an alcohol. The aqueous solution of the water-soluble conducting polyaniline obtained by the method of production mentioned above can be made to form a thin film by a simple technique such as spin coat, dip coat, or bar coat and utilized for various antistatic applications and non-linear optical materials.