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    • 10. 发明授权
    • Method for the hydrogenation of poly-si
    • 多晶硅氢化方法
    • US08580661B1
    • 2013-11-12
    • US13216304
    • 2011-08-24
    • Qi Wang
    • Qi Wang
    • H01L21/20
    • H01L21/02532H01L21/02595H01L21/0262H01L21/02664H01L21/67109H01L31/03682H01L31/075H01L31/182Y02E10/546Y02E10/548Y02P70/521
    • A method for hydrogenating poly-si. Poly-si is placed into the interior of a chamber. A filament is placed into the interior of a chamber. The base pressure of the interior of the chamber is evacuated, preferably to 10−6 Torr or less. The poly-si is heated for a predetermined poly-si heating time. The filament is heated by providing an electrical power to the filament. Hydrogen is supplied into the pressurized interior of the chamber comprising the heated poly-si and the heated filament. Atomic hydrogen is produced by the filament at a rate whereby the atomic hydrogen surface density at the poly-si is less than the poly-si surface density. Preferably, the poly-si is covered from the atomic hydrogen produced by the heated filament for a first predetermined covering time. Preferably, the poly-si is then uncovered from the atomic hydrogen produced by the heated filament for a first hydrogenation time.
    • 一种氢化多晶硅的方法。 多晶硅放置在室内。 灯丝放置在室内。 室内部的基础压力被抽真空,优选为10-6托或更低。 将多晶硅加热预定的多晶硅加热时间。 通过向灯丝提供电力来加热灯丝。 将氢气供应到包括加热的多晶硅和加热的细丝的腔室的加压内部。 原子氢由细丝以多晶硅中的原子氢表面密度小于多晶硅表面密度的速率产生。 优选地,多晶硅由加热的细丝产生的原子氢覆盖第一预定覆盖时间。 优选地,多晶硅然后从被加热的细丝产生的原子氢中暴露出第一个氢化时间。