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1. 发明授权

US5946594A Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US5946594A
公开(公告)日：1999-08-31
申请号：US581765
申请日：1996-01-02
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L21/285 , H01L21/4763
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH.sub.3 --) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits on a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500.degree. C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积在已被加热到200-500℃的优选范围内的晶片或其它基底上。

2. 发明授权

US06977225B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US06977225B2
公开(公告)日：2005-12-20
申请号：US10706244
申请日：2003-11-12
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L21/285 , H01L21/44
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。

3. 发明授权

US5735960A Apparatus and method to increase gas residence time in a reactor 失效
标题翻译：在反应器中增加气体停留时间的装置和方法
公开(公告)号：US5735960A
公开(公告)日：1998-04-07
申请号：US627677
申请日：1996-04-02
申请人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
发明人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00
CPC分类号： C23C16/45517 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/509
摘要： An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow path between the interior and exterior regions so as to create a pressure drop from the interior to the exterior of the body within the chamber. The body is disposed in a reaction chamber with a first area proximate a gaseous reactant inlet and a second area proximate a substrate support such that the substrate is positioned in proximity to the interior of the body. As such, gaseous reactants introduced into the interior of said chamber through the inlet create a pressure drop between the interior and the exterior of the body. In a preferred embodiment, the body is cylindrically shaped and contains perforations providing the flow paths. Preferably, the perforations are either more numerous or larger in the second area than the first area to create a pressure gradient in the interior of the body. Alternatively, the perforations may be uniform in size and uniformly distributed over the body or the perforations can be configured to create a desired pressure differential in the body to support a plasma created in the body and control its location.
摘要翻译：提供了一种用于通过使用具有内部和外部区域的主体来控制CVD反应器中的气态反应物的流动的装置，其中主体限定了内部和外部区域之间的至少一个流动路径，以便产生压降从室内的内部到外部。身体设置在具有接近气体反应物入口的第一区域和接近基底支撑件的第二区域的反应室中，使得基底定位在身体内部附近。因此，通过入口引入所述室的内部的气态反应物在主体的内部和外部之间产生压降。在优选实施例中，主体是圆柱形的并且包含提供流动路径的穿孔。优选地，穿孔在第二区域中比第一区域更多或更大，以在身体的内部产生压力梯度。或者，穿孔的尺寸可以是均匀的并且均匀地分布在身体上，或者穿孔可以被配置成在身体中产生期望的压力差，以支撑在体内产生的等离子体并控制其位置。

4. 发明授权

US07268078B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US07268078B2
公开(公告)日：2007-09-11
申请号：US11298978
申请日：2005-12-09
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L21/44
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。

5. 发明申请

US20060134912A1 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US20060134912A1
公开(公告)日：2006-06-22
申请号：US11298978
申请日：2005-12-09
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L21/44
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。

6. 发明授权

US06653234B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 失效
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US06653234B2
公开(公告)日：2003-11-25
申请号：US10011134
申请日：2001-12-07
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L2144
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma-sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3-) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits on a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500° C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积在晶片或其它基底上，其已被加热到200-500℃的优选范围内。

7. 发明授权

US06340637B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 有权
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US06340637B2
公开(公告)日：2002-01-22
申请号：US09730038
申请日：2000-12-05
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L2144
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3—) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits an a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500° C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积了已被加热到200-500℃的优选范围内的晶片或其它基底。

8. 发明授权

US5935336A Apparatus to increase gas residence time in a reactor 失效
公开(公告)号：US5935336A
公开(公告)日：1999-08-10
申请号：US950549
申请日：1997-10-15
申请人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
发明人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
IPC分类号： C23C16/44 , C23C16/455 , C23C16/509 , C23C16/00
CPC分类号： C23C16/45517 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/509
摘要： An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow path between the interior and exterior regions so as to create a pressure drop from the interior to the exterior of the body within the chamber. The body is disposed in a reaction chamber with a first area proximate a gaseous reactant inlet and a second area proximate a substrate support such that the substrate is positioned in proximity to the interior of the body. As such, gaseous reactants introduced into the interior of said chamber through the inlet create a pressure drop between the interior and the exterior of the body. In a preferred embodiment, the body is cylindrically shaped and contains perforations providing the flow paths. Preferably, the perforations are either more numerous or larger in the second area than the first area to create a pressure gradient in the interior of the body. Alternatively, the perforations may be uniform in size and uniformly distributed over the body or the perforations can be configured to create a desired pressure differential in the body to support a plasma created in the body and control its location.

9. 发明授权

US06340499B1 Method to increase gas residence time in a reactor 失效
标题翻译：在反应器中增加气体停留时间的方法
公开(公告)号：US06340499B1
公开(公告)日：2002-01-22
申请号：US09201029
申请日：1998-11-30
申请人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
发明人： Gurtej S. Sandhu , Ravi Iyer , Sujit Sharan
IPC分类号： C23C1600
CPC分类号： C23C16/45517 , C23C16/4412 , C23C16/455 , C23C16/45591 , C23C16/509
摘要： An apparatus is provided for controlling the flow of gaseous reactants in a CVD reactor through the use of a body having interior and exterior regions, in which the body defines at least one flow path between the interior and exterior regions so as to create a pressure drop from the interior to the exterior of the body within the chamber. The body is disposed in a reaction chamber with a first area proximate a gaseous reactant inlet and a second area proximate a substrate support such that the substrate is positioned in proximity to the interior of the body. As such, gaseous reactants introduced into the interior of said chamber through the inlet create a pressure drop between the interior and the exterior of the body. In a preferred embodiment, the body is cylindrically shaped and contains perforations providing the flow paths. Preferably, the perforations are either more numerous or larger in the second area than the first area to create a pressure gradient in the interior of the body. Alternatively, the perforations may be uniform in size and uniformly distributed over the body or the perforations can be configured to create a desired pressure differential in the body to support a plasma created in the body and control its location.
摘要翻译：提供了一种用于通过使用具有内部和外部区域的主体来控制CVD反应器中的气态反应物的流动的装置，其中主体限定了内部和外部区域之间的至少一个流动路径，以便产生压降从室内的内部到外部。身体设置在具有接近气体反应物入口的第一区域和接近基底支撑件的第二区域的反应室中，使得基底定位在身体内部附近。因此，通过入口引入所述室的内部的气态反应物在主体的内部和外部之间产生压降。在优选实施例中，主体是圆柱形的并且包含提供流动路径的穿孔。优选地，穿孔在第二区域中比第一区域更多或更大，以在身体的内部产生压力梯度。或者，穿孔的尺寸可以是均匀的并且均匀地分布在身体上，或者穿孔可以被配置成在身体中产生期望的压力差，以支撑在体内产生的等离子体并控制其位置。

10. 发明授权

US06184136B2 Chemical vapor deposition of titanium from titanium tetrachloride and hydrocarbon reactants 有权
标题翻译：来自四氯化钛和烃反应物的钛的化学气相沉积
公开(公告)号：US06184136B2
公开(公告)日：2001-02-06
申请号：US09292993
申请日：1999-04-16
申请人： Ravi Iyer , Sujit Sharan
发明人： Ravi Iyer , Sujit Sharan
IPC分类号： H01L2144
CPC分类号： C23C16/08 , H01L21/28556 , H01L21/28568 , Y10S438/909
摘要： A new process for depositing titanium metal layers via chemical vapor deposition is disclosed. The process provides deposited titanium layers having a high degree of conformality, even in trenches and contact openings having aspect ratios greater than 1:5. The reaction gases for the improved process are titanium tetrachloride and a hydrocarbon gas, which for a preferred embodiment of the process is methane. The reaction is carried out in a plasma environment created by a radio frequency source greater than 10 KHz. The key to obtaining titanium metal as a reaction product, rather than titanium carbide, is to set the plasma sustaining electrical power within a range that will remove just one hydrogen atom from each molecule of the hydrocarbon gas. In a preferred embodiment of the process, highly reactive methyl radicals (CH3—) are formed from methane gas. These radicals attack the titanium-chlorine bonds of the tetrachloride molecule and form chloromethane, which is evacuated from the chamber as it is formed. Titanium metal deposits an a wafer or other substrate that has been heated to a temperature within a preferred range of 200-500° C.
摘要翻译：公开了一种通过化学气相沉积沉积钛金属层的新工艺。该方法即使在具有大于1:5的纵横比的沟槽和接触开口中也提供具有高度保形性的沉积钛层。用于改进方法的反应气体是四氯化钛和烃气体，其中该方法的优选实施方案是甲烷。该反应在由大于10KHz的射频源产生的等离子体环境中进行。获得钛金属作为反应产物而不是碳化钛的关键是将等离子体维持电功率设置在仅从烃气体的每个分子除去一个氢原子的范围内。在该方法的优选实施方案中，由甲烷气体形成高反应性甲基（CH 3 - ）。这些自由基攻击四氯化碳分子的钛 - 氯键，并形成氯甲烷，其形成时从室中排出。钛金属沉积了已被加热到200-500℃的优选范围内的晶片或其它基底。

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