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    • 5. 发明授权
    • Memory system and method to reduce reflection and signal degradation
    • 记忆系统和方法减少反射和信号衰减
    • US07194572B2
    • 2007-03-20
    • US10638069
    • 2003-08-08
    • Michael W. LeddigeJames A. McCall
    • Michael W. LeddigeJames A. McCall
    • G06F12/00
    • G06F13/4239G11C5/04
    • Embodiments of the invention provide a memory command and address (CA) bus architecture that can accommodate higher CA data output frequencies with reduced signal degradation. For one embodiment of the invention the CA is divided on the motherboard and a CA signal component routed to each of two dual in-line memory modules (DIMMs) of a two-DIMM/channel memory bus design. The CA signal component on each DIMM is then routed sequentially through each dynamic random access memory (DRAM) chip on the respective DIMM. In one embodiment, after routing through each DRAM, the CA signal is terminated on the DIMM. In an alternative embodiment, the CA signal is terminated on the die at the last DRAM of each respective DIMM.
    • 本发明的实施例提供了一种存储器命令和地址(CA)总线架构,其可以适应具有降低的信号劣化的较高CA数据输出频率。 对于本发明的一个实施例,CA在主板上被划分,并且CA信号分量被路由到两个DIMM /通道存储器总线设计的两个双列直插式存储器模块(DIMM)中的每一个。 然后,每个DIMM上的CA信号分量依次通过相应DIMM上的每个动态随机存取存储器(DRAM)芯片。 在一个实施例中,在路由每个DRAM之后,CA信号在DIMM上终止。 在替代实施例中,CA信号在每个相应的DIMM的最后一个DRAM处终止在管芯上。
    • 6. 发明授权
    • Method and apparatus for implementing a serial memory architecture
    • 实现串行存储器架构的方法和装置
    • US6144576A
    • 2000-11-07
    • US136797
    • 1998-08-19
    • Michael W. LeddigeBryce D. Horine
    • Michael W. LeddigeBryce D. Horine
    • G11C5/00G11C5/06
    • G11C5/063G11C5/04
    • A serial memory architecture. A memory subsystem includes a bus and a first memory module coupled to the bus. The first memory module has a first connector to receive bus signals from the bus and a second connector to output the bus signals. A second memory module has a first connector to receive the bus signals from the second connector of the first memory module. The bus signals are thereby routed through the memory modules in a serial manner. In one embodiment the memory modules include one or more 90.degree. routing paths between connectors and the devices of the memory modules. In one embodiment, trace lengths are matched.
    • 串行存储器架构。 存储器子系统包括总线和耦合到总线的第一存储器模块。 第一存储器模块具有用于从总线接收总线信号的第一连接器和用于输出总线信号的第二连接器。 第二存储器模块具有用于从第一存储器模块的第二连接器接收总线信号的第一连接器。 因此,总线信号以串行方式路由存储器模块。 在一个实施例中,存储器模块包括连接器和存储器模块的装置之间的一个或多个90°路由路径。 在一个实施例中,迹线长度匹配。