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1. 发明申请

US20130122697A1 Doping aluminum in tantalum silicide 有权
公开(公告)号：US20130122697A1
公开(公告)日：2013-05-16
申请号：US13296715
申请日：2011-11-15
申请人： Xinliang Lu , Seshadri Ganguli , Michael S. Chen , Atif Noori , Shih Chung Chen , Maitreyee Mahajani , Mei Chang
发明人： Xinliang Lu , Seshadri Ganguli , Michael S. Chen , Atif Noori , Shih Chung Chen , Maitreyee Mahajani , Mei Chang
IPC分类号： H01L21/28 , H01B1/02
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.

2. 发明申请

US20120322262A1 N-Metal Film Deposition With Initiation Layer 有权
标题翻译：带起始层的N金属膜沉积
公开(公告)号：US20120322262A1
公开(公告)日：2012-12-20
申请号：US13525610
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/28
CPC分类号： H01L21/28088 , H01L21/02697 , H01L29/4966
摘要： Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.
摘要翻译：提供了将N-金属沉积到基底上的方法。方法包括首先沉积起始层。起始层可以包括钴，钽，镍，钛或TaAlC。这些起始层可用于沉积TaCx。

3. 发明授权

US09269584B2 N-metal film deposition with initiation layer 有权
标题翻译：具有起始层的N金属膜沉积
公开(公告)号：US09269584B2
公开(公告)日：2016-02-23
申请号：US13525610
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/44 , H01L21/28 , H01L29/49 , H01L21/02
CPC分类号： H01L21/28088 , H01L21/02697 , H01L29/4966
摘要： Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAlC. These initiation layers can be used to deposit TaCx.
摘要翻译：提供了将N-金属沉积到基底上的方法。方法包括首先沉积起始层。起始层可以包括钴，钽，镍，钛或TaAlC。这些起始层可用于沉积TaCx。

4. 发明授权

US08592305B2 Doping aluminum in tantalum silicide 有权
标题翻译：在硅化钽中掺杂铝
公开(公告)号：US08592305B2
公开(公告)日：2013-11-26
申请号：US13296715
申请日：2011-11-15
申请人： Xinliang Lu , Seshadri Ganguli , Shih Chung Chen , Atif Noori , Maitreyee Mahajani , Mei Chang
发明人： Xinliang Lu , Seshadri Ganguli , Shih Chung Chen , Atif Noori , Maitreyee Mahajani , Mei Chang
IPC分类号： H01L21/4763
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.
摘要翻译：提供了提供掺铝的TaSix膜的方法。掺杂TaSix薄膜允许调整功函数值，使TaSix薄膜更适合作为NMOS应用的N金属。一种这样的方法涉及用含铝化合物浸泡TaSix膜。另一种方法涉及沉积TaSix膜，用含铝化合物浸泡并重复较厚的膜。第三种方法涉及使用钽，铝和硅前体沉积掺铝的TaSix膜。

5. 发明授权

US08895443B2 N-metal film deposition with initiation layer 有权
标题翻译：具有起始层的N金属膜沉积
公开(公告)号：US08895443B2
公开(公告)日：2014-11-25
申请号：US13525604
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/44 , H01L21/28
CPC分类号： H01L21/28088
摘要： Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
摘要翻译：提供了将N-金属沉积到基底上的方法。一些方法包括在衬底上提供TaM或TiM层的起始层，其中M选自铝，碳，贵金属，镓，硅，锗及其组合; 以及将具有TaM或TiM层的衬底暴露于包括用还原剂浸泡衬底的表面以提供经处理的起始层的处理工艺。

6. 发明申请

US20120322250A1 N-Metal Film Deposition With Initiation Layer 有权
标题翻译：带起始层的N金属膜沉积
公开(公告)号：US20120322250A1
公开(公告)日：2012-12-20
申请号：US13525604
申请日：2012-06-18
申请人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
发明人： Seshadri Ganguli , Xinliang Lu , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Mei Chang
IPC分类号： H01L21/283
CPC分类号： H01L21/28088
摘要： Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
摘要翻译：提供了将N-金属沉积到基底上的方法。一些方法包括在衬底上提供TaM或TiM层的起始层，其中M选自铝，碳，贵金属，镓，硅，锗及其组合; 以及将具有TaM或TiM层的衬底暴露于包括用还原剂浸泡衬底的表面以提供经处理的起始层的处理工艺。

7. 发明申请

US20130295759A1 Methods For Manufacturing Metal Gates 有权
标题翻译：制造金属门的方法
公开(公告)号：US20130295759A1
公开(公告)日：2013-11-07
申请号：US13865285
申请日：2013-04-18
申请人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
发明人： Xinliang Lu , Seshadri Ganguli , Atif Noori , Maitreyee Mahajani , Shih Chung Chen , Yu Lei , Xinyu Fu , Wei Tang , Srinivas Gandikota
IPC分类号： H01L29/66
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

8. 发明申请

US20140112824A1 Deposition Of Films Comprising Aluminum Alloys With High Aluminum Content 有权
标题翻译：包含铝含量高的铝合金薄膜的沉积
公开(公告)号：US20140112824A1
公开(公告)日：2014-04-24
申请号：US14058406
申请日：2013-10-21
申请人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
发明人： David Thompson , Srinivas Gandikota , Xinliang Lu , Wei Tang , Jing Zhou , Seshadri Ganguli , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Shih Chung Chen
IPC分类号： C23C16/12
CPC分类号： C23C16/30 , C23C16/45531 , C23C16/45534
摘要： Provided are films comprising aluminum, carbon and a metal, wherein the aluminum is present in an amount greater than about 16% by elemental content and less than about 50% carbon. Also provided are methods of depositing the same.
摘要翻译：提供的是包含铝，碳和金属的膜，其中铝以大于约16％的元素含量和小于约50％的碳存在。还提供了沉积它们的方法。

9. 发明申请

US20140017408A1 Deposition Of N-Metal Films Comprising Aluminum Alloys 有权
标题翻译：包含铝合金的N-金属膜的沉积
公开(公告)号：US20140017408A1
公开(公告)日：2014-01-16
申请号：US13930194
申请日：2013-06-28
申请人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
发明人： Srinivas Gandikota , Xinliang Lu , Shih Chung Chen , Wei Tang , Jing Zhou , Seshadri Ganguli , David Thompson , Jeffrey W. Anthis , Atif Noori , Faruk Gungor , Dien-Yeh Wu , Mei Chang , Xinyu Fu , Yu Lei
IPC分类号： C23C18/00
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

10. 发明授权

US09300151B2 Wireless charging device 有权
标题翻译：无线充电设备
公开(公告)号：US09300151B2
公开(公告)日：2016-03-29
申请号：US14188770
申请日：2014-02-25
申请人： Shih Chung Chen , Shu-Mu Chen
发明人： Shih Chung Chen , Shu-Mu Chen
IPC分类号： H02J7/00 , H02J7/02 , H02J17/00
CPC分类号： H02J7/0044 , H02J7/0045 , H02J7/0052 , H02J7/025 , H02J17/00 , H02J50/10 , H02J50/90
摘要： A wireless charging device of the disclosure is used for carrying out wireless battery charging for an electronic device. The wireless charging device includes a wireless charger, a positioning seat, and an adjusting seat. The positioning seat is fixed with the wireless charger. The positioning seat and the wireless charger collectively form a sliding space. The adjusting seat supports the electronic device. The adjusting seat extends into the sliding space and slides along the sliding space relatively to the positioning seat, to adjust a location of a transmitter coil center of the wireless charger, which results that the transmitter coil center of the transmitter of the wireless charger aligns to a receptor coil center of the electronic device.
摘要翻译：本公开的无线充电装置用于对电子设备进行无线电池充电。无线充电装置包括无线充电器，定位座和调节座。定位座与无线充电器固定。定位座和无线充电器共同形成滑动空间。调节座支撑电子设备。调节座延伸到滑动空间中并相对于定位座滑动，调节无线充电器的发射器线圈中心的位置，这导致无线充电器的发射器线圈中心对准电子设备的受体线圈中心。

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