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1. 发明专利

JP2007005749A Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：JP2007005749A
公开(公告)日：2007-01-11
申请号：JP2005251966
申请日：2005-08-31
申请人： Shi-Ming Chen , Epitech Technology Corp , エピテックテクノロジーコーポレーション , ミンチェンシン
发明人： CHEN SHI-MING , CHANG CHIA-YU
IPC分类号： H01L33/54 , H01L33/56
CPC分类号： H01L33/54
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode sealing structure having a pattern structure on its surface.
SOLUTION: A light emitting diode chip 304 and a sealing structure 306 are provided. The sealing structure 306 covers the light emitting diode chip 304. The surface of the sealing structure 306 has a pattern structure which is provided with a plurality of stripe structures 310 for controlling beam shape outputted by a light emitting diode 300.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供在其表面上具有图案结构的发光二极管密封结构。解决方案：提供发光二极管芯片304和密封结构306。密封结构306覆盖发光二极管芯片304.密封结构306的表面具有图案结构，该图案结构设置有多个条形结构310，用于控制由发光二极管300输出的光束形状。版权所有：（C）2007，JPO＆INPIT

2. 发明专利

JP2007081360A Vertical type light emitting diode and its manufacture 有权
标题翻译：垂直型发光二极管及其制造
公开(公告)号：JP2007081360A
公开(公告)日：2007-03-29
申请号：JP2006000118
申请日：2006-01-04
申请人： Shi-Ming Chen , Epitech Technology Corp , エピテックテクノロジーコーポレーション , シーミンチェン
发明人： CHEN SHI-MING
IPC分类号： H01L33/32
CPC分类号： H01L33/0079
摘要： PROBLEM TO BE SOLVED: To provide a vertical type light emitting diode at a reduced cost by reinforcing an operation reliability of a device and improving a production yield, and a method for manufacturing it. SOLUTION: This method comprises following steps. A sapphire substrate 200 is prepared. A light emitting epitaxial structure 202 is formed on the sapphire substrate 200. Then a first conductive type electrode 204 is formed on the surface of the light emitting epitaxial structure 202. Then, a local removing step is performed to remove a part of the sapphire substrate from the surface of the light emitting epitaxial structure 202 so that a part of the surface is exposed. Then a second conductive type electrode 210 is formed on the exposed part of the surface of the light emitting epitaxial structure 202. The conductive type of the first conductive type electrode 204 is opposite to that of the second conductive type electrode 210. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：通过增强装置的操作可靠性和提高生产成本，以降低的成本提供垂直型发光二极管及其制造方法。
解决方案：该方法包括以下步骤。制备蓝宝石衬底200。在蓝宝石衬底200上形成发光外延结构202.然后在发光外延结构202的表面上形成第一导电型电极204.然后，执行局部去除步骤以去除蓝宝石衬底的一部分从发光外延结构202的表面，使得表面的一部分露出。然后在发光外延结构202的表面的暴露部分上形成第二导电型电极210.第一导电类型电极204的导电类型与第二导电类型电极210的导电类型相反。（C）2007，JPO＆INPIT

3. 发明专利

JP2007013093A Light emitting diode 审中-公开
标题翻译：发光二极管
公开(公告)号：JP2007013093A
公开(公告)日：2007-01-18
申请号：JP2006031831
申请日：2006-02-09
申请人： Shi-Ming Chen , Epitech Technology Corp , エピテックテクノロジーコーポレーション , シーミンチェン
发明人： CHEN SHI-MING
IPC分类号： H01L33/06 , H01L33/12 , H01L33/14 , H01L33/30 , H01L33/40
CPC分类号： H01L33/10 , H01L33/20 , H01L33/405
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode which improves a process yield by largely reducing a quantity of bubbles generated at a boundary of joining faces. SOLUTION: The light emitting diode includes a sub-mount 218, a first conductive substrate 200 located on the sub-mount 218, a reflective layer 216 located between the sub-mount 218 and the first conductive substrate 200, a first conductive buffer layer 202 located on the first conductive substrate 200, a first conductive DBR layer 204 located on the first conductive buffer layer 202, a first conductive clad layer 206 located on the first conductive DBR layer 204, and a second conductive window layer 212 located on an light emitting epitaxial structure. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光二极管，其通过大大减少在接合面的边界处产生的气泡的量来提高工艺成品率。解决方案：发光二极管包括子座218，位于子座218上的第一导电衬底200，位于子座218和第一导电衬底200之间的反射层216，第一导电位于第一导电基板200上的缓冲层202，位于第一导电缓冲层202上的第一导电DBR层204，位于第一导电DBR层204上的第一导电覆盖层206和位于第一导电DBR层204上的第二导电窗层212 发光外延结构。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2006310785A Light emitting diode for suppressing lateral current and manufacturing method thereof 审中-公开
标题翻译：用于抑制横向电流的发光二极管及其制造方法
公开(公告)号：JP2006310785A
公开(公告)日：2006-11-09
申请号：JP2006062599
申请日：2006-03-08
申请人： Shi-Ming Chen , Epitech Technology Corp , エピテック・テクノロジー・コーポレイションEpitech Technology Corporation , チェン・シ−ミンCHEN Shi−Ming
发明人： CHEN SHI-MING
IPC分类号： H01L33/06 , H01L33/12 , H01L33/32 , H01L33/42
CPC分类号： H01L33/38 , H01L33/145 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode for suppressing a lateral current and its manufacturing method, suitable for the application of a high-output light emitting diode. SOLUTION: The light emitting diode comprises an insulating board 402, a semiconductor epitaxial structure, a first conductive electrode 416, and a second conductive electrode 412. The semiconductor epitaxial structure comprises, at least, one trench 420, a first conductive semiconductor layer 404 which is formed on a part of the insulating board 402, and in which the bottom of the trench 420 is arranged below to form an electrically insulated region in the semiconductor epitaxial structure, an active layer 406 which is formed on a part of the first conductive semiconductor layer 404 so formed as to expose a remaining first conductive semiconductor layer 404, and a second conductive semiconductor layer 408 formed on the active layer 406. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种适用于高输出发光二极管的应用的用于抑制横向电流的发光二极管及其制造方法。解决方案：发光二极管包括绝缘板402，半导体外延结构，第一导电电极416和第二导电电极412.半导体外延结构至少包括一个沟槽420，第一导电半导体层404形成在绝缘板402的一部分上，并且其中沟槽420的底部布置在下面以在半导体外延结构中形成电绝缘区域，形成在一部分上的有源层406 第一导电半导体层404被形成为露出剩余的第一导电半导体层404，以及形成在有源层406上的第二导电半导体层408。（C）2007，JPO＆INPIT

5. 发明专利

JP2005303252A Nitride light emitting diode and its manufacturing method 审中-公开
标题翻译：氮化物发光二极管及其制造方法
公开(公告)号：JP2005303252A
公开(公告)日：2005-10-27
申请号：JP2004239293
申请日：2004-08-19
申请人： Shi-Ming Chen , Epitech Corp Ltd , エピテック・コーポレイション・リミテッドEpitech Corporation, Ltd. , チェン・シ−ミンCHEN Shi−Ming
发明人： CHU CHAN-SHIN , YU KOU-FUI , RU CHI-MEN , RI SHUE-RIN , CHEN SHI-MING
IPC分类号： H01L33/06 , H01L33/32 , H01L33/40 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode device having excellent thermal stability and a long lifetime. SOLUTION: A nitride light emitting diode and its manufacturing method are explained. The nitride light emitting diode has a P-type electrode, an N-type electrode, and a P-type transparent contact layer formed of a titanium nitride based material. The titanium nitride based material has not only excellent ohmic contact properties and transparency, but also excellent thermal stability. Thus, the thermal stability of the light emitting diode can be effectively improved. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决问题：提供具有优异的热稳定性和长寿命的发光二极管装置。解决方案：解释了氮化物发光二极管及其制造方法。氮化物发光二极管具有P型电极，N型电极和由氮化钛基材料形成的P型透明接触层。氮化钛基材料不仅具有优异的欧姆接触性和透明性，而且具有优异的热稳定性。因此，可以有效地提高发光二极管的热稳定性。版权所有（C）2006，JPO＆NCIPI

6. 发明专利

JP2005229083A Packaging of light-emitting diode 审中-公开
标题翻译：发光二极管封装
公开(公告)号：JP2005229083A
公开(公告)日：2005-08-25
申请号：JP2004124203
申请日：2004-04-20
申请人： Shi-Ming Chen , Epitech Corp Ltd , エピテックコーポレーションリミテッド , チェンシーミン
发明人： CHEN SHI-MING
IPC分类号： H01L33/54 , H01L33/56 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To uniformize light radiation from an LED by minimizing discontinuity of light in the axial direction and in the nonaxial directions.
SOLUTION: To control and uniformize light radiation by forming a notch 303 in the packaging structure of a light-emitting diode in the axial direction. The shape of the notch is a cylinder of which the upper surface 304 and the bottom surface 305 have different areas, a cylinder which has a curved surface, and of which the upper surface 304 and the bottom surface 305 have different areas, or an inverted cone shape.
COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过使轴在轴向和非轴向上的不连续性最小化来均匀化来自LED的光辐射。解决方案：通过在轴向上在发光二极管的封装结构中形成凹口303来控制和均匀化光辐射。凹口的形状是上表面304和底面305具有不同区域的圆柱体，具有弯曲表面的圆柱体，其上表面304和底表面305具有不同的面积，或倒置的锥形。版权所有（C）2005，JPO＆NCIPI

7. 发明专利

JP2004214592A Color mixing light emitting diode 审中-公开
标题翻译：彩色混合发光二极管
公开(公告)号：JP2004214592A
公开(公告)日：2004-07-29
申请号：JP2003127338
申请日：2003-05-02
申请人： Chin Shakumei , Epitech Technology Corp , 聯銓科技股▲分▼有限公司 , 陳錫銘
发明人： CHEN SHI-MING
IPC分类号： H01L25/075 , H01L33/02 , H01L33/62 , H01L33/00
CPC分类号： H01L25/0756 , H01L25/0753 , H01L2224/48091 , H01L2924/3011 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a color mixing light emitting diode (LED) which produces light of another color by connecting a plurality of LEDs which emit light of different colors electrically serially and/or parallel by using chip manufacturing. SOLUTION: White color is emitted, for example, by emission of yellow light (or red orange light) emitted by a first LED chip set and emission of blue light (or blue-green light) emitted by a second LED chip set. The first LED chip set can be a photoluminescence LED chip and the first LED chip is excited by light emitted by the second LED chip and emits light. Light of another color can be made by mixing light emitted by the second LED chip and light emitted by the first LED chip. COPYRIGHT: (C)2004,JPO&NCIPI
摘要翻译：要解决的问题：提供一种通过使用芯片制造连接发出串联和/或并联的不同颜色的光的多个LED来产生另一种颜色的光的混色发光二极管（LED）。
解决方案：例如，通过发射由第一LED芯片组发射的黄光（或红橙色光）和由第二LED芯片组发射的蓝光（或蓝绿光）发射，发出白色。第一个LED芯片组可以是光致发光LED芯片，第一个LED芯片被第二个LED芯片发出的光激发，并发光。可以通过混合由第二LED芯片发出的光和由第一LED芯片发出的光来制成另一种颜色的光。版权所有（C）2004，JPO＆NCIPI

8. 发明专利

JP2004228555A Light emitting diode having reflection preventing layer and manufacturing method therefor 审中-公开
公开(公告)号：JP2004228555A
公开(公告)日：2004-08-12
申请号：JP2003169660
申请日：2003-06-13
申请人： Epitech Technology Corp , 聯銓科技股▲分▼有限公司
发明人： CHEN SHI-MING , RI WEN RYAN
IPC分类号： H01L21/31 , H01L33/06 , H01L33/12 , H01L33/14 , H01L33/28 , H01L33/30 , H01L33/00
CPC分类号： H01L33/44
摘要： PROBLEM TO BE SOLVED: To provide LED having a reflection preventing layer, in which light reflected on a surface of LED is reduced by adding the reflection preventing layer on a chip where an epoxy packaging method is not used, and also to provide a method for manufacturing LED. SOLUTION: The reflection preventing layer is formed on a window layer of LED, and a chance where a photon that LED generates is totally reflected in an interface between the window layer and air is reduced. A process used for forming the reflection preventing layer is plasma CVD (PECVD), sputtering, heat deposition and electronic beam deposition. A refractive index of the reflection preventing layer is between 3 and 1.5. A material forming the reflection preventing layer is Si3N4 or ZnSe. COPYRIGHT: (C)2004,JPO&NCIPI

9. 发明专利

JP2007251130A Light emitting diode and its manufacturing method 审中-公开
标题翻译：发光二极管及其制造方法
公开(公告)号：JP2007251130A
公开(公告)日：2007-09-27
申请号：JP2006356874
申请日：2006-12-29
申请人： Epitech Technology Corp , エピテック・テクノロジー・コーポレイションEpitech Technology Corporation
发明人： CHEN SHI-MING , HOUNG MAU-PHON , CHU CHANG-HSING , YEN TE-CHI
IPC分类号： H01L33/12 , H01L21/306 , H01L33/32 , H01L33/42 , H01L33/62
CPC分类号： H01L33/22 , H01L33/44 , H01L2933/0091
摘要： PROBLEM TO BE SOLVED: To provide a method for manufacturing a light emitting diode in which light extracting efficiency is effectively improved. SOLUTION: This method comprises a process for preparing a light emitting epitaxial structure 102 which has a first surface and a second surface having a relation of front and rear, where a substrate 100 is arranged on the first surface, a process for forming a metal layer on the second surface of the light emitting epitaxial structure 102, a process for oxidizing the metal layer by an anode oxidation step to form a metal oxide layer 108, and a process for removing a part of the metal oxide layer 108 by an etching step to form a plurality of holes 110 in the metal oxide layer 108. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种制造发光二极管的方法，其中有效地提高光提取效率。解决方案：该方法包括一种制备发光外延结构102的方法，该发光外延结构102具有第一表面和具有前后关系的第二表面，其中基板100布置在第一表面上，形成工艺在发光外延结构102的第二表面上的金属层，通过阳极氧化步骤氧化金属层以形成金属氧化物层108的工艺，以及通过一个金属氧化物层108去除金属氧化物层108的一部分的工艺蚀刻步骤以在金属氧化物层108中形成多个孔110.权利要求：（C）2007，JPO＆INPIT

10. 发明专利

JP2004228554A Light emitting diode having distributed electrode 审中-公开
公开(公告)号：JP2004228554A
公开(公告)日：2004-08-12
申请号：JP2003169635
申请日：2003-06-13
申请人： Chin Shakumei , Epitech Technology Corp , 聯銓科技股▲分▼有限公司 , 陳錫銘
发明人： CHEN SHI-MING
IPC分类号： H01L33/06 , H01L33/32 , H01L33/38 , H01L33/42 , H01L33/00
CPC分类号： H01L33/38 , H01L33/20
摘要： PROBLEM TO BE SOLVED: To provide a light emitting diode with sufficient light emitting efficiency and a large area by uniforming density distribution of current flowing in the light emitting diode of the large area. SOLUTION: The diode is provided with first distributed electrodes 390 and 394 arranged on a first conduction-type semiconductor layer 330 and a second distributed electrode arranged on a second conduction-type semiconductor layer laminated on the first conduction-type semiconductor layer 330. The second distributed electrode is composed of a transparent electrode 400a, and electrode parts 400b, 402 and 404, which are formed on the transparent electrode 400a. COPYRIGHT: (C)2004,JPO&NCIPI

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