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1. 发明申请

US20120202357A1 In Situ Vapor Phase Surface Activation Of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US20120202357A1
公开(公告)日：2012-08-09
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31 , B05D3/10
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

2. 发明授权

US08778816B2 In situ vapor phase surface activation of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US08778816B2
公开(公告)日：2014-07-15
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基底的温度下暴露于低于饱和蒸汽压的水分压，以将基本上没有反应性表面终止的致密热氧化物转化成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

3. 发明授权

US08530356B2 Method of BARC removal in semiconductor device manufacturing 有权
标题翻译：半导体器件制造中BARC去除的方法
公开(公告)号：US08530356B2
公开(公告)日：2013-09-10
申请号：US13317084
申请日：2011-10-07
申请人： Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
发明人： Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
IPC分类号： H01L21/302
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31138 , H01L21/31144
摘要： A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.
摘要翻译：从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％。该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

4. 发明授权

US08658242B2 Resist fortification for magnetic media patterning 有权
标题翻译：磁性介质图案抗蚀强化
公开(公告)号：US08658242B2
公开(公告)日：2014-02-25
申请号：US13193539
申请日：2011-07-28
申请人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
发明人： Christopher D. Bencher , Roman Gouk , Steven Verhaverbeke , Li-Qun Xia , Yong-Won Lee , Matthew D. Scotney-Castle , Martin A. Hilkene , Peter I. Porshnev
IPC分类号： B05D5/12
CPC分类号： G11B5/85 , G11B5/743 , G11B5/855
摘要： A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.
摘要翻译：提供了一种形成磁性介质基板的方法和装置。在具有磁敏感层的基底上形成图案化的抗蚀剂层。在图案化的抗蚀剂层上形成保形层，以防止后续处理期间图案的劣化。对衬底进行能量处理，其中能量物质根据形成在图案化抗蚀剂中的图案穿透图案化抗蚀剂和保形层的部分，撞击磁敏感层并改变其磁性。然后去除图案化的抗蚀剂和共形保护层，留下具有基本上不变的形貌的磁性质图案的磁性基底。

5. 发明授权

US08318589B2 Method for forming transparent conductive oxide 失效
标题翻译：形成透明导电氧化物的方法
公开(公告)号：US08318589B2
公开(公告)日：2012-11-27
申请号：US12748780
申请日：2010-03-29
申请人： Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
发明人： Valery V. Komin , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
IPC分类号： H01L21/20
CPC分类号： C23C14/086 , C23C14/5806 , C23C14/5873 , H01L31/022466 , H01L31/0236 , H01L31/02366 , H01L31/03682 , H01L31/03685 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/077 , H01L31/1864 , H01L31/1884 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/548 , Y02P70/521
摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
摘要翻译：本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。可以通过冷溅射工艺沉积透明导电氧化物层。换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。在诸如从感受器的沉积期间不会向衬底提供额外的热量。在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

6. 发明申请

US20120164470A1 SILVER-NICKEL CORE-SHEATH NANOSTRUCTURES AND METHODS TO FABRICATE 审中-公开
标题翻译：银镍核心纳米结构和方法制作
公开(公告)号：US20120164470A1
公开(公告)日：2012-06-28
申请号：US13331870
申请日：2011-12-20
申请人： Kurtis Leschkies , Roman Gouk , Steven Verhaverbeke , Robert Visser
发明人： Kurtis Leschkies , Roman Gouk , Steven Verhaverbeke , Robert Visser
IPC分类号： B32B15/01 , C23C28/00 , C25D3/50 , B82Y30/00 , B82Y40/00
CPC分类号： C23C28/021 , B32B15/018 , B82Y30/00 , B82Y40/00 , C23C18/1635 , C23C18/1658 , C23C18/54 , C23C28/023 , C30B7/14 , C30B29/02 , C30B29/60 , Y10T428/12438
摘要： Embodiments of the invention generally provide core-sheath nanostructures and methods for forming such nanostructures. In one embodiment, a method for forming core-sheath nanostructures includes stirring an aqueous dispersion containing silver nanostructures while adding a catalytic metal salt solution to the aqueous dispersion and forming catalytic metal coated silver nanostructures during a galvanic replacement process. The method further includes stirring an organic solvent dispersion containing the catalytic metal coated silver nanostructures dispersed in an organic solvent while adding a nickel salt solution to the organic solvent dispersion, and thereafter, adding a reducing solution to the organic solvent dispersion to form silver-nickel core-sheath nanostructures during a nickel coating process. In one embodiment, the core-sheath nanostructures are silver-nickel core-sheath nanowires, wherein each silver-nickel core-sheath nanowire has a sheath layer of nickel disposed over and encompassing a catalytic metal layer of palladium disposed on a nanowire core of silver.
摘要翻译：本发明的实施方案通常提供用于形成这种纳米结构的芯鞘纳米结构和方法。在一个实施方案中，形成芯鞘纳米结构的方法包括搅拌包含银纳米结构的水性分散体，同时在电偶置换过程中向催化金属盐溶液加入催化金属盐溶液并形成催化金属涂覆的银纳米结构。该方法还包括搅拌含有分散在有机溶剂中的催化金属涂覆的银纳米结构的有机溶剂分散体，同时向有机溶剂分散体中加入镍盐溶液，然后向该有机溶剂分散体中加入还原溶液以形成银 - 镍芯鞘纳米结构在镀镍过程中。在一个实施方案中，芯鞘纳米结构是银 - 镍芯鞘纳米线，其中每个银 - 镍芯鞘纳米线具有设置在镀银的纳米线芯上的钯的催化金属层上并包围镍的护套层。

7. 发明申请

US20100311204A1 METHOD FOR FORMING TRANSPARENT CONDUCTIVE OXIDE 有权
标题翻译：形成透明导电氧化物的方法
公开(公告)号：US20100311204A1
公开(公告)日：2010-12-09
申请号：US12748790
申请日：2010-03-29
申请人： VALERY V. KOMIN , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
发明人： VALERY V. KOMIN , Hien-Minh Huu Le , David Tanner , James S. Papanu , Philip A. Greene , Suresh M. Shrauti , Roman Gouk , Steven Verhaverbeke
IPC分类号： H01L31/18 , H01L21/283
CPC分类号： C23C14/086 , C23C14/541 , C23C14/56 , C23C14/5846 , H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/03921 , H01L31/056 , H01L31/075 , H01L31/1884 , Y02E10/52 , Y02E10/548
摘要： Embodiments disclosed herein generally relate to a process of depositing a transparent conductive oxide layer over a substrate. The transparent oxide layer is sometimes deposited onto a substrate for later use in a solar cell device. The transparent conductive oxide layer may be deposited by a “cold” sputtering process. In other words, during the sputtering process, a plasma is ignited in the processing chamber which naturally heats the substrate. No additional heat is provided to the substrate during deposition such as from the susceptor. After the transparent conductive oxide layer is deposited, the substrate may be annealed and etched, in either order, to texture the transparent conductive oxide layer. In order to tailor the shape of the texturing, different wet etch chemistries may be utilized. The different etch chemistries may be used to shape the surface of the transparent conductive oxide and the etch rate.
摘要翻译：本文公开的实施例通常涉及在衬底上沉积透明导电氧化物层的工艺。透明氧化物层有时沉积在衬底上，以供以后用于太阳能电池器件中。可以通过“冷”溅射工艺沉积透明导电氧化物层。换句话说，在溅射过程中，在处理室中点燃等离子体，其自然地加热基板。在诸如从感受器的沉积期间不会向衬底提供额外的热量。在沉积透明导电氧化物层之后，可以以任何顺序对衬底进行退火和蚀刻，以对透明导电氧化物层进行纹理化。为了调整纹理的形状，可以使用不同的湿蚀刻化学物质。可以使用不同的蚀刻化学物质来形成透明导电氧化物的表面和蚀刻速率。

8. 发明申请

US20060237043A1 Method and apparatus for cleaning semiconductor substrates 审中-公开
标题翻译：用于清洁半导体衬底的方法和装置
公开(公告)号：US20060237043A1
公开(公告)日：2006-10-26
申请号：US11114276
申请日：2005-04-25
申请人： Steven Verhaverbeke , Roman Gouk
发明人： Steven Verhaverbeke , Roman Gouk
IPC分类号： B08B3/02
CPC分类号： H01L21/67051
摘要： According to one aspect of the present invention, a method and apparatus for cleaning a semiconductor substrate are provided. The apparatus may include a chamber wall defining a processing chamber having a chamber gas therein, a semiconductor substrate support, and a fluid nozzle within the processing chamber having first and second pieces. The first piece may have a tip with a tip opening, and the second piece may have inlet and outlet openings and a fluid passageway therethrough interconnecting the inlet and outlet openings. A space may be defined in the fluid nozzle such that when a semiconductor substrate processing fluid is directed into the fluid passageway a relative low pressure region being formed within the fluid passageway to draw the chamber gas into the fluid passageway through the space between in the fluid nozzle, mix with semiconductor substrate processing fluid, and flow onto the semiconductor substrate.
摘要翻译：根据本发明的一个方面，提供了一种用于清洁半导体衬底的方法和装置。该设备可以包括限定其中具有腔室气体的处理室的腔壁，半导体衬底支撑件和处理室内的具有第一和第二块的流体喷嘴。第一件可以具有带有尖端开口的尖端，并且第二件可具有入口和出口开口以及通过其互连入口和出口的流体通道。可以在流体喷嘴中限定空间，使得当半导体衬底处理流体被引导到流体通道中时，形成在流体通道内的相对低压区域以将腔室气体通过流体中的空间喷嘴，与半导体衬底处理流体混合，并流到半导体衬底上。

9. 发明授权

US06954021B2 Matching circuit for megasonic transducer device 失效
标题翻译：超声波换能器配套电路
公开(公告)号：US06954021B2
公开(公告)日：2005-10-11
申请号：US10194174
申请日：2002-07-12
申请人： Roman Gouk , Steven Verhaverbeke
发明人： Roman Gouk , Steven Verhaverbeke
IPC分类号： B06B1/02 , H01L21/00 , H03H7/40 , H01L41/09
CPC分类号： H01L21/67057 , B06B1/0207 , B08B3/12 , H01L21/6704 , H01L21/67051 , H03H7/40
摘要： A method and apparatus for matching impedance magnitude and impedance phase for an acoustic- wave transducer load and an RF power source. The acoustic-wave transducer load has a load impedance magnitude and phase. The RF power source has a source impedance magnitude and phase. In one embodiment of the invention, a transformer matches the source and load impedance magnitudes. A capacitor, connected in series with the transformer, matches the source impedance phase to the load impedance phase.
摘要翻译：用于匹配声波传感器负载和RF电源的阻抗幅度和阻抗相位的方法和装置。声波传感器负载具有负载阻抗幅值和相位。 RF电源具有源阻抗幅值和相位。在本发明的一个实施例中，变压器匹配源极和负载阻抗幅度。与变压器串联连接的电容器将源阻抗相位与负载阻抗相位相匹配。

10. 发明申请

US20130089987A1 Method of barc removal in semiconductor device manufacturing 有权
标题翻译：半导体器件制造中的去除条纹的方法
公开(公告)号：US20130089987A1
公开(公告)日：2013-04-11
申请号：US13317084
申请日：2011-10-07
申请人： Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
发明人： Roman Gouk , Steven Verhaverbeke , Han-Wen Chen
IPC分类号： H01L21/306
CPC分类号： H01L21/76808 , H01L21/02063 , H01L21/31138 , H01L21/31144
摘要： A method of removing a high molecular weight organic-comprising hard mask or BARC from a surface of a porous low k dielectric material, where a change in the dielectric constant of the low k dielectric material is less than about 5% after application of the method. The method comprises exposing the organic-comprising hard mask or BARC to nitric acid vapor which contains at least 68% by mass HNO3.
摘要翻译：从多孔低k电介质材料的表面去除含有高分子量有机物的硬掩模或BARC的方法，其中在施加该方法之后低k电介质材料的介电常数的变化小于约5％。该方法包括将包含有机物的硬掩模或BARC暴露于含有至少68质量％HNO 3的硝酸蒸气。

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