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1. 发明申请

US20120202357A1 In Situ Vapor Phase Surface Activation Of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US20120202357A1
公开(公告)日：2012-08-09
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31 , B05D3/10
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water above the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基板的温度下暴露于高于饱和蒸气压的水分压，以将基本上没有反应性表面终止的致密热氧化物转变成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

2. 发明授权

US08778816B2 In situ vapor phase surface activation of SiO2 有权
标题翻译： SiO2原位气相表面活化
公开(公告)号：US08778816B2
公开(公告)日：2014-07-15
申请号：US13192041
申请日：2011-07-27
申请人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
发明人： Tatsuya E. Sato , David Thompson , Jeffrey W. Anthis , Vladimir Zubkov , Steven Verhaverbeke , Roman Gouk , Maitreyee Mahajani , Patricia M. Liu , Malcolm J. Bevan
IPC分类号： H01L21/31
CPC分类号： H01L21/3105 , C23C16/0272 , C23C16/405 , C23C16/45525 , H01L21/02164 , H01L21/02181 , H01L21/0228 , H01L21/02312
摘要： Methods for preparing a substrate for a subsequent film formation process are described. Methods for preparing a substrate for a subsequent film formation process, without immersion in an aqueous solution, are also described. A process is described that includes disposing a substrate into a process chamber, the substrate having a thermal oxide surface with substantially no reactive surface terminations. The thermal oxide surface is exposed to a partial pressure of water below the saturated vapor pressure at a temperature of the substrate to convert the dense thermal oxide with substantially no reactive surface terminations to a surface with hydroxyl surface terminations. This can occur in the presence of a Lewis base such as ammonia.
摘要翻译：描述制备用于后续成膜工艺的基材的方法。还描述了不浸没在水溶液中制备用于后续成膜工艺的基材的方法。描述了一种方法，其包括将衬底设置到处理室中，所述衬底具有基本上没有反应性表面终止的热氧化物表面。热氧化物表面在基底的温度下暴露于低于饱和蒸汽压的水分压，以将基本上没有反应性表面终止的致密热氧化物转化成具有羟基表面终止的表面。这可以在诸如氨的路易斯碱存在下进行。

3. 发明申请

US20120220116A1 Dry Chemical Cleaning For Semiconductor Processing 审中-公开
标题翻译：干式化学清洗用于半导体加工
公开(公告)号：US20120220116A1
公开(公告)日：2012-08-30
申请号：US13192034
申请日：2011-07-27
申请人： Atif Noori , Maitreyee Mahajani , Patricia M. Liu , Steven Hung , Tatsuya E. Sato , Mei Chang
发明人： Atif Noori , Maitreyee Mahajani , Patricia M. Liu , Steven Hung , Tatsuya E. Sato , Mei Chang
IPC分类号： H01L21/28
CPC分类号： H01L21/28194 , C23C16/0245 , H01J37/32091 , H01J37/3244 , H01L21/02046 , H01L21/02301 , H01L21/28238 , H01L21/31116 , H01L21/67207 , H01L29/517
摘要： A deposition process including a dry etch process, followed by a deposition process of a high-k dielectric is disclosed. The dry etch process involves placing a substrate to be cleaned into a processing chamber to remove surface oxides. A gas mixture is energized to form a plasma of reactive gas which reacts with an oxide on the substrate, forming a thin film. The substrate is heated to vaporize the thin film and expose a substrate surface. The substrate surface is substantially free of oxides. Deposition is then used to form a layer on the substrate surface.
摘要翻译：公开了一种沉积工艺，其包括干蚀刻工艺，随后是高k电介质的沉积工艺。干蚀刻工艺涉及将要清洗的基底放置在处理室中以去除表面氧化物。气体混合物通电以形成反应性气体的等离子体，其与衬底上的氧化物反应，形成薄膜。将衬底加热以蒸发薄膜并暴露衬底表面。基底表面基本上不含氧化物。然后沉积在衬底表面上形成一层。

4. 发明授权

US08633119B2 Methods for manufacturing high dielectric constant films 失效
公开(公告)号：US08633119B2
公开(公告)日：2014-01-21
申请号：US13189982
申请日：2011-07-25
申请人： Tatsuya E. Sato , Maitreyee Mahajani
发明人： Tatsuya E. Sato , Maitreyee Mahajani
IPC分类号： H01L21/314
CPC分类号： H01L21/0228 , H01L21/02046 , H01L21/02052 , H01L21/02181 , H01L21/02301 , H01L21/28088 , H01L21/28194 , H01L21/324 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.

5. 发明授权

US08633114B2 Methods for manufacturing high dielectric constant films 有权
标题翻译：制造高介电常数膜的方法
公开(公告)号：US08633114B2
公开(公告)日：2014-01-21
申请号：US13104521
申请日：2011-05-10
申请人： Tatsuya E. Sato , Maitreyee Mahajani
发明人： Tatsuya E. Sato , Maitreyee Mahajani
IPC分类号： H01L21/302
CPC分类号： H01L21/02181 , H01L21/0206 , H01L21/0228 , H01L21/02301 , H01L21/28194 , H01L29/513 , H01L29/517
摘要： Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.
摘要翻译：提供了在基底上沉积高k电介质膜的方法。这些方法包括在清洁表面之后退火衬底以产生悬挂键并将高k电介质膜沉积在退火表面上。

6. 发明授权

US08642468B2 NMOS metal gate materials, manufacturing methods, and equipment using CVD and ALD processes with metal based precursors 有权
标题翻译： NMOS金属栅极材料，制造方法和使用具有金属基前体的CVD和ALD工艺的设备
公开(公告)号：US08642468B2
公开(公告)日：2014-02-04
申请号：US13093710
申请日：2011-04-25
申请人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
发明人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
IPC分类号： H01L21/4763
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

7. 发明申请

US20120289063A1 Methods For Manufacturing High Dielectric Constant Films 失效
标题翻译：高介电常数膜制造方法
公开(公告)号：US20120289063A1
公开(公告)日：2012-11-15
申请号：US13189982
申请日：2011-07-25
申请人： Tatsuya E. Sato , Maitreyee Mahajani
发明人： Tatsuya E. Sato , Maitreyee Mahajani
IPC分类号： H01L21/314
CPC分类号： H01L21/0228 , H01L21/02046 , H01L21/02052 , H01L21/02181 , H01L21/02301 , H01L21/28088 , H01L21/28194 , H01L21/324 , H01L21/823857 , H01L29/4966 , H01L29/517 , H01L29/78
摘要： Provided are methods for depositing a high-k dielectric film on a substrate. The methods comprise annealing a substrate after cleaning the surface to create dangling bonds and depositing the high-k dielectric film on the annealed surface.
摘要翻译：提供了在基底上沉积高k电介质膜的方法。这些方法包括在清洁表面之后退火衬底以产生悬挂键并将高k电介质膜沉积在退火表面上。

8. 发明申请

US20110263115A1 NMOS METAL GATE MATERIALS, MANUFACTURING METHODS, AND EQUIPMENT USING CVD AND ALD PROCESSES WITH METAL BASED PRECURSORS 有权
标题翻译： NMOS金属栅材料，制造方法和使用基于金属的前驱体的CVD和ALD工艺的设备
公开(公告)号：US20110263115A1
公开(公告)日：2011-10-27
申请号：US13093710
申请日：2011-04-25
申请人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
发明人： Seshadri Ganguli , Srinivas Gandikota , Yu Lei , Xinliang Lu , Sang Ho Yu , Hoon Kim , Paul F. Ma , Mei Chang , Maitreyee Mahajani , Patricia M. Liu
IPC分类号： H01L21/3205
CPC分类号： H01L21/28008 , C23C16/06 , C23C16/32 , C23C16/42 , C23C16/45542 , H01L21/28079 , H01L21/28088 , H01L21/28097 , H01L21/28562 , H01L21/76843 , H01L21/76871 , H01L21/823814 , H01L21/823842 , H01L29/495 , H01L29/4966
摘要： Embodiments of the invention generally provide methods for depositing metal-containing materials and compositions thereof. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. In one embodiment, a method for processing a substrate is provided which includes depositing a dielectric material having a dielectric constant greater than 10, forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
摘要翻译：本发明的实施方案通常提供沉积含金属材料及其组合物的方法。所述方法包括通过包括热分解，CVD，脉冲CVD或ALD的气相沉积工艺形成金属，金属碳化物，金属硅化物，金属氮化物和金属碳化物衍生物的沉积工艺。在一个实施例中，提供了一种用于处理衬底的方法，其包括沉积具有大于10的介电常数的介电材料，在电介质材料中形成特征定义，在功能定义的侧壁和底部上共同保存功函件材料并且将金属浇注填充材料沉积在功函材料上以填充特征定义，其中通过使具有式MXY的至少一种金属卤化物前体反应沉积功函材料，其中M是钽，铪，钛和镧，X是选自氟，氯，溴或碘的卤化物，y为3〜5。

9. 发明申请

US20130122697A1 Doping aluminum in tantalum silicide 有权
公开(公告)号：US20130122697A1
公开(公告)日：2013-05-16
申请号：US13296715
申请日：2011-11-15
申请人： Xinliang Lu , Seshadri Ganguli , Michael S. Chen , Atif Noori , Shih Chung Chen , Maitreyee Mahajani , Mei Chang
发明人： Xinliang Lu , Seshadri Ganguli , Michael S. Chen , Atif Noori , Shih Chung Chen , Maitreyee Mahajani , Mei Chang
IPC分类号： H01L21/28 , H01B1/02
CPC分类号： H01L21/28088 , H01L29/4966
摘要： Provided are methods of providing aluminum-doped TaSix films. Doping TaSix films allows for the tuning of the work function value to make the TaSix film better suited as an N-metal for NMOS applications. One such method relates to soaking a TaSix film with an aluminum-containing compound. Another method relates to depositing a TaSix film, soaking with an aluminum-containing compound, and repeating for a thicker film. A third method relates to depositing an aluminum-doped TaSix film using tantalum, aluminum and silicon precursors.

10. 发明授权

US08383478B2 High-density nonvolatile memory and methods of making the same 有权
标题翻译：高密度非易失性存储器及其制作方法
公开(公告)号：US08383478B2
公开(公告)日：2013-02-26
申请号：US13195518
申请日：2011-08-01
申请人： Scott Brad Herner , Maitreyee Mahajani
发明人： Scott Brad Herner , Maitreyee Mahajani
IPC分类号： H01L21/336
CPC分类号： G11C5/02 , H01L21/8238 , H01L23/48 , H01L27/1021 , H01L27/148 , H01L29/94 , H01L2924/0002 , H01L2924/00
摘要： Nonvolatile memory cells and methods of forming the same are provided, the methods including forming a first conductor at a first height above a substrate; forming a first pillar-shaped semiconductor element above the first conductor, wherein the first pillar-shaped semiconductor element comprises a first heavily doped layer of a first conductivity type, a second lightly doped layer above and in contact with the first heavily doped layer, and a third heavily doped layer of a second conductivity type above and in contact with the second lightly doped layer, the second conductivity type opposite the first conductivity type; forming a first dielectric antifuse above the third heavily doped layer of the first pillar-shaped semiconductor element; and forming a second conductor above the first dielectric antifuse.
摘要翻译：提供了非易失存储器单元及其形成方法，所述方法包括在衬底上方的第一高度处形成第一导体; 在所述第一导体上形成第一柱状半导体元件，其中所述第一柱状半导体元件包括第一导电类型的第一重掺杂层，在所述第一重掺杂层上方并与其接触的第二轻掺杂层，以及第二导电类型的第三重掺杂层在第二轻掺杂层上方并与第二轻掺杂层接触，第二导电类型与第一导电类型相反; 在所述第一柱状半导体元件的所述第三重掺杂层的上方形成第一介电反熔丝; 以及在所述第一介电反熔丝之上形成第二导体。

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